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Vishay Siliconix IRFD9014PBF
- Part No.:
- IRFD9014PBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 4-DIP (0.300", 7.62mm)
- Datasheet:
-
IRFD9014PBF.pdf
- Description:
- MOSFET P-CH 60V 1.1A 4DIP
- Quantity:
- Payment:
- Shipping:
Inventory:5,876
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Product details
Overview
IRFD9014PBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in HVMDIP (4-pin DIP) package, rated for -60 V VDS, 0.50 Ω RDS(on) at VGS = -10 V, and 1.3 W power dissipation at 25 °C. It supports repetitive avalanche operation up to -1.1 A and operates from -55 °C to +175 °C junction temperature, commonly used in DC-DC converter high-side switches and industrial relay drivers.
For engineers reviewing the IRFD9014PBF datasheet, IRFD9014PBF pinout, IRFD9014PBF application, or IRFD9014PBF equivalent, key selection criteria include its -60 V blocking capability, low gate charge (12 nC), fast switching (11 ns turn-on delay), thermal robustness (175 °C TJ), and machine-insertable HVMDIP packaging for automated assembly.
Technical Context
This device is a third-generation silicon-based P-channel MOSFET optimized for ruggedness and cost-effective through-hole power control. Its dual-drain configuration serves as a thermal link to the PCB, enabling 1 W power dissipation without heatsinking. The structure supports unclamped inductive switching with 140 mJ single-pulse avalanche energy.
Designed for high-voltage logic-level compatible drive, it features a gate threshold voltage range of -2.0 V to -4.0 V and exhibits stable RDS(on) over temperature (typical -0.060 V/°C VDS tempco). Body diode recovery is characterized with trr = 80–160 ns and Qrr = 0.096–0.19 μC under specified conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -60 V - Maximum drain-source blocking voltage; suitable for 48 V rail protection and negative supply switching |
| RDS(on) | 0.50 Ω @ VGS = -10 V - Enables <1.1 A continuous conduction with ≤0.6 W I²R loss at ambient |
| Qg | 12 nC - Low total gate charge reduces driver power demand and enables fast 11 ns turn-on delay |
| TJ Range | -55 °C to +175 °C - Supports operation in sealed industrial enclosures and under-hood automotive auxiliary circuits |
| PD | 1.3 W @ TA = 25 °C - Achieved via dual-drain thermal path; derates linearly to zero at ~180 °C ambient |
| EAS | 140 mJ - Specifies single-pulse unclamped inductive energy handling without failure |
| dV/dt Rating | -4.5 V/ns - Confirmed peak diode recovery dV/dt immunity prevents false turn-on in noisy environments |
Pinout & Package
The IRFD9014PBF uses the HVMDIP (High Voltage Mini-DIP) package - a 4-pin through-hole plastic DIP with 0.1" lead pitch, dual drain leads (D1/D2), and symmetrical pin layout optimized for stacking and thermal conduction to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Pin 1 & Pin 4) | Drain (dual terminals) | Electrically common drain connection; both pins serve as primary current path and thermal interface to PCB |
| G (Pin 2) | Gate | Control terminal requiring -10 V for full enhancement; threshold -2.0 V to -4.0 V enables TTL/CMOS-compatible drive |
| S (Pin 3) | Source | Reference node for gate drive and load return; body diode anode connects internally to source |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive Avalanche Rated | Rated for -1.1 A repetitive avalanche current; enables reliable operation in inductive load switching without external snubbers |
| Dynamic dV/dt Immunity | Guaranteed -4.5 V/ns peak diode recovery dV/dt; suppresses parasitic turn-on during fast voltage transients |
| 175 °C Junction Operation | Extended temperature rating allows use in thermally constrained spaces without derating penalties typical of 150 °C parts |
| End Stackable DIP | HVMDIP mechanical design permits vertical stacking of multiple units on 0.1" grid for compact high-current parallel configurations |
| Low-Cost Machine-Insertable | Standard DIP footprint supports automated wave soldering and eliminates need for SMT reflow infrastructure |
Applications
| Motor Control | Power Supply Sequencing |
|---|---|
Use Scenario: Bidirectional DC motor H-bridge high-side switch in 24–48 V industrial actuators. IC Role / Device Role / Timing Role: P-channel high-side switch controlling motor voltage polarity and braking via body diode freewheeling. Use Value: 175 °C rating ensures reliability under stall current and ambient heat; 0.50 Ω RDS(on) limits conduction loss to <0.6 W at 1.1 A. | Use Scenario: Negative rail enable switch in multi-rail telecom power systems with strict sequencing requirements. IC Role / Device Role / Timing Role: Controlled turn-on of -48 V backup supply after main rail stabilization. Use Value: -60 V VDS provides 12 V margin above -48 V rail; fast 11 ns td(on) supports precise timing windows. |
| Industrial Relay Drivers | Overvoltage Protection Circuits |
Use Scenario: Solid-state replacement for electromagnetic relays driving solenoids and valves in PLC I/O modules. IC Role / Device Role / Timing Role: High-side load switch isolating 24 V DC control outputs from field wiring. Use Value: Repetitive avalanche rating handles inductive kickback without clamping diodes; dual-drain improves thermal coupling to PCB ground plane. | Use Scenario: Reverse-polarity and overvoltage cutoff in battery-powered portable instrumentation. IC Role / Device Role / Timing Role: P-channel MOSFET configured as active-high protection switch upstream of LDO regulators. Use Value: -60 V VDS withstands load dump transients up to ±50 V; -4.5 V/ns dV/dt immunity prevents false triggering during ESD events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFD9110PBF | -100 V VDS, 0.90 Ω RDS(on) @ -10 V, higher voltage rating but higher on-resistance | Better suited for 72–96 V systems; less efficient at 48 V due to higher conduction loss | Select when system transients exceed -60 V or when legacy designs require higher voltage margin |
| STP12PF06 | -60 V VDS, 0.35 Ω RDS(on) @ -10 V, TO-220 package, no dual-drain thermal path | Lower RDS(on) improves efficiency but requires heatsink for >0.8 A; incompatible pinout and mounting | Choose when higher current (>1.1 A) and lower loss are critical, and board space allows TO-220 footprint |
Compared with IRFD9110PBF and STP12PF06, the IRFD9014PBF offers optimal balance of voltage margin, thermal performance in DIP form, and cost for 48 V industrial control-neither over-specified nor thermally compromised in standard PCB-mount applications.
Availability
IRFD9014PBF is available at Aetrix Electronics and suitable for industrial motor control, power supply sequencing, and solid-state relay replacement requiring stable component supply, long-term manufacturability, and RoHS-compliant through-hole assembly.
Supply support for IRFD9014PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRFD series targets cost-sensitive, high-volume through-hole power switching applications where ruggedness, thermal performance, and automated assembly compatibility are prioritized over surface-mount density.
FAQ
What is the maximum continuous drain current for IRFD9014PBF at 100 °C ambient temperature?
The IRFD9014PBF supports -0.80 A continuous drain current at TA = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limitations of the HVMDIP package without forced airflow or heatsinking. At 25 °C ambient, the rating is -1.1 A. Designers must verify junction temperature using RthJA = 120 °C/W and actual power dissipation to ensure TJ remains ≤175 °C in the final application.
Does IRFD9014PBF have a built-in body diode, and what are its key parameters?
Yes, the IRFD9014PBF integrates a body diode with VSD = -5.5 V at IS = -1.1 A and TJ = 25 °C, reverse recovery time trr = 80–160 ns, and Qrr = 0.096–0.19 μC. These values are measured under standardized conditions (IF = -6.7 A, dI/dt = 100 A/μs), confirming suitability for freewheeling in inductive loads like solenoids and relay coils without external diodes.
Can IRFD9014PBF be driven directly by a 5 V microcontroller GPIO?
No-IRFD9014PBF is not a logic-level MOSFET. Its gate threshold voltage ranges from -2.0 V to -4.0 V, and full enhancement (0.50 Ω RDS(on)) requires VGS = -10 V. A 5 V GPIO cannot produce the required negative gate-source voltage. A level-shifting circuit or dedicated high-side gate driver (e.g., TC4427 with inverting stage) is necessary to achieve proper turn-on and minimize conduction losses in the IRFD9014PBF.
What does "repetitive avalanche rated" mean for IRFD9014PBF, and how is it tested?
"Repetitive avalanche rated" means the IRFD9014PBF is characterized and guaranteed to survive repeated unclamped inductive switching events under defined conditions: VDD = -25 V, TJ start = 25 °C, L = 33 mH, Rg = 25 Ω, IAS = -2.2 A. It supports -1.1 A repetitive avalanche current and 0.13 mJ repetitive avalanche energy, enabling robust operation in relay and motor drive circuits without snubber networks-provided pulse width and duty cycle stay within thermal limits.
Is IRFD9014PBF suitable for automotive under-hood applications?
The IRFD9014PBF is qualified for operation from -55 °C to +175 °C junction temperature and meets Vishay's industrial reliability standards, but it is not AEC-Q101 qualified. While its 175 °C rating supports under-hood ambient temperatures, automotive OEMs typically require AEC-Q101 certification for qualification. For non-safety-critical auxiliary functions (e.g., cabin fan control), the IRFD9014PBF may be used with additional system-level validation-but AEC-Q101 alternatives should be selected for production automotive designs.
IRFD9014PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- 4-DIP (0.300", 7.62mm)
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 500mOhm @ 660mA, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 270 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.3W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 4-HVMDIP
IRFD9014PBF FAQ
1.How can I place an order for IRFD9014PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFD9014PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFD9014PBF reliable?
The price and inventory of IRFD9014PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFD9014PBF is usually 5 days.
3.What payment methods are accepted for IRFD9014PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFD9014PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFD9014PBF?
IRFD9014PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFD9014PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFD9014PBF?
For technical support, including IRFD9014PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFD9014PBF requirements.
6.How does Aetrix verify that IRFD9014PBF is sourced from the original manufacturer or authorized distributors?
All IRFD9014PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFD9014PBF meets industry standards.
7.What is the process for return or replacement of IRFD9014PBF?
All IRFD9014PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFD9014PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFD9014PBF part is unused and in its original packaging.
Return procedure for IRFD9014PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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