Vishay Siliconix IRFD9020
- Part No.:
- IRFD9020
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 4-DIP (0.300", 7.62mm)
- Datasheet:
-
IRFD9020.pdf
- Description:
- MOSFET P-CH 60V 1.6A 4DIP
- Quantity:
- Payment:

- Shipping:

Inventory:9,760
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Product details
Overview
IRFD9020 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in HVMDIP package, rated for -60 V drain-source voltage, 0.28 Ω RDS(on) at VGS = -10 V, and 1.6 A continuous drain current at 25 °C. It features repetitive avalanche rating, fast switching (13 ns turn-on delay), and 175 °C maximum junction temperature - used in DC-DC converter high-side switches and industrial relay drivers.
For engineers reviewing the IRFD9020 datasheet, IRFD9020 pinout, IRFD9020 application, or IRFD9020 equivalent, key selection criteria include its -60 V VDS, thermal performance in through-hole DIP layout, body diode recovery time (100–200 ns), and compatibility with -10 V gate drive in low-power high-side configurations.
Technical Context
This P-channel MOSFET operates as a high-side switch in non-synchronous buck converters and solid-state relay replacements, leveraging its integrated body diode and -4.5 V/ns peak diode recovery dV/dt rating. Its 19 nC total gate charge and 5.4 nC gate-source charge support moderate-speed switching without excessive driver loss.
The device uses third-generation silicon process for ruggedized avalanche capability (140 mJ single-pulse EAS) and stable RDS(on) over temperature (±0.056 V/°C VDS tempco). Thermal resistance RthJA is 120 °C/W, enabling 1.3 W dissipation at 25 °C ambient with standard PCB copper area.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -60 V - supports input rails up to 48 V DC in high-side switch applications |
| RDS(on) @ VGS = -10 V | 0.28 Ω - limits conduction loss to ≤ 720 mW at 1.6 A ID |
| Qg | 19 nC - determines gate driver current requirement (~1.9 mA avg for 100 kHz fsw) |
| ID (continuous, TA = 25 °C) | -1.6 A - defines max steady-state load current without heatsink |
| tr / tf | 68 ns / 29 ns - enables <100 kHz PWM operation with minimal switching loss |
| VSD @ IS = -1.6 A | -6.3 V - impacts body diode conduction loss during freewheeling phase |
| EAS | 140 mJ - allows safe unclamped inductive turn-off in relay/snubberless designs |
Pinout & Package
HVMDIP (High Voltage Mini-DIP) package: 4-pin through-hole, dual-drain configuration (pins 1 & 4), gate on pin 2, source on pin 3. Dual drain improves thermal path to PCB copper; case length 8.38 mm max, pin pitch 2.54 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 & Pin 4 (Drain) | Main current path collector | Dual-drain structure lowers thermal resistance and increases current handling margin |
| Pin 2 (Gate) | Control electrode | Requires negative VGS (≤ -2.0 V threshold); 100 nA leakage ensures low standby power |
| Pin 3 (Source) | Reference node for gate drive | Connected to load return; body diode anode tied internally to source |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Enables reliable operation under inductive load switching without external snubbers |
| Dynamic dV/dt rating (-4.5 V/ns) | Prevents false turn-on during high dv/dt transients in motor or relay drive circuits |
| 175 °C operating temperature | Supports sealed industrial enclosures with limited airflow and high ambient temperatures |
| End stackable HVMDIP package | Allows vertical stacking of multiple units on 0.1" grid for compact multi-channel layouts |
| Fast switching (td(on) = 13 ns) | Reduces transition losses in 50–100 kHz DC-DC topologies with minimal gate drive complexity |
Applications
| Industrial Relay Replacement | Low-Power High-Side Switch |
|---|---|
|
Use Scenario: Replacing electromechanical relays in PLC output modules and HVAC controllers where >100,000 cycle life and silent operation are required. IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch controlling 24 V DC loads up to 1.6 A. Use Value: Eliminates contact bounce, wear-out, and EMI from arcing; leverages -60 V VDS and 140 mJ EAS for inductive load safety. |
Use Scenario: Powering isolated sensor supplies or auxiliary rails in battery-powered instrumentation where reverse polarity protection and low quiescent current matter. IC Role / Device Role / Timing Role: High-side switch placed between battery and load, controlled by microcontroller GPIO via level-shifting circuitry. Use Value: Uses -2.0 to -4.0 V VGS(th) range for logic-compatible gate control; 100 μA IDSS ensures <1 μA system standby leakage. |
| Non-Synchronous Buck Converter | DC Motor Direction Control (Half-Bridge) |
|
Use Scenario: Top switch in low-cost 12–48 V input buck regulators for LED drivers or embedded power supplies where synchronous rectification is unnecessary. IC Role / Device Role / Timing Role: High-side switching element with body diode conducting freewheeling current during off-time. Use Value: -6.3 V VSD and 100–200 ns trr minimize freewheeling loss and voltage overshoot during diode recovery. |
Use Scenario: Upper transistor in half-bridge driving small brushed DC motors (<10 W) in portable tools or actuators requiring bidirectional control. IC Role / Device Role / Timing Role: One leg of complementary P/N pair; handles high-side switching while N-channel handles low-side. Use Value: Matches timing profile (13 ns td(on), 29 ns tf) with common N-channel counterparts for clean dead-time management. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-side switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFD120 | VDS = -100 V, RDS(on) = 0.27 Ω, Qg = 22 nC, same HVMDIP package | Better voltage margin for 72 V systems; higher gate charge increases driver demand | Choose when input voltage exceeds 48 V but thermal budget allows 22 nC Qg |
| STP12PF06 | VDS = -60 V, RDS(on) = 0.30 Ω, Qg = 16 nC, TO-220 package | Lower gate charge reduces driver loss; TO-220 requires heatsink for >1 W dissipation | Choose when board space permits TO-220 and lower switching loss outweighs through-hole assembly cost |
Compared with IRFD9020, IRFD120 offers higher voltage headroom at slightly increased gate drive burden, while STP12PF06 trades HVMDIP's automated insertion advantage for lower Qg and higher thermal capacity in TO-220 - both require layout review due to differing footprints and thermal paths.
Availability
IRFD9020 is available at Aetrix Electronics and suitable for industrial relay replacement, low-power high-side switching, and non-synchronous buck converter designs requiring stable component supply, long-lifecycle support, and Pb-free compliance.
Supply support for IRFD9020 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRFD series targets cost-sensitive, machine-insertable high-voltage switching applications - designed for robustness in relay replacement, power supply sequencing, and programmable logic controller outputs.
FAQ
What is the maximum continuous drain current for IRFD9020 at 100 °C ambient temperature?
The IRFD9020 supports -1.1 A continuous drain current at TA = 100 °C, derated from -1.6 A at 25 °C using the linear derating factor of 0.0083 W/°C. This reflects thermal limitations of the HVMDIP package without forced airflow or heatsinking. The IRFD9020 must be mounted on adequate copper area to sustain this current reliably.
Does IRFD9020 have avalanche capability, and how is it specified?
Yes, the IRFD9020 is repetitively avalanche rated with 0.13 mJ EAR and 140 mJ single-pulse EAS. The datasheet specifies EAS under conditions of VDD = -25 V, L = 15 mH, Rg = 25 Ω, and IAS = -3.2 A. This makes IRFD9020 suitable for inductive load switching without external snubbers in properly designed circuits.
What is the gate threshold voltage range for IRFD9020, and how does it affect drive requirements?
The IRFD9020 has a gate-source threshold voltage VGS(th) ranging from -2.0 V to -4.0 V at ID = -1 μA. This means full enhancement begins near -4 V, and logic-level drive (e.g., -5 V) ensures robust turn-on. Driving below -2 V risks partial conduction and excessive RDS(on); the IRFD9020 thus requires negative gate bias relative to source, not TTL-compatible levels.
Can IRFD9020 be used in parallel configurations, and what precautions apply?
The IRFD9020 is not characterized for paralleling in the datasheet. Its negative temperature coefficient of RDS(on) helps balance current, but mismatched threshold voltages and layout asymmetry may cause uneven sharing. For higher current, Vishay recommends using a single higher-rated device rather than paralleling IRFD9020 units unless validated per application.
What is the body diode reverse recovery time (trr) of IRFD9020, and why does it matter in switching applications?
The IRFD9020 body diode exhibits trr of 100–200 ns at TJ = 25 °C, IF = -11 A, and di/dt = 100 A/μs. In buck or half-bridge topologies, this recovery time affects voltage overshoot and switching loss during freewheeling transitions. Designers must account for trr in dead-time selection and snubber design - critical for stable operation of IRFD9020 in hard-switched circuits.
IRFD9020 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- 4-DIP (0.300", 7.62mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 280mOhm @ 960mA, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1µA
- Gate Charge (Qg) (Max) @ Vgs:
- 19 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 570 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.3W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 4-HVMDIP
IRFD9020 FAQ
1.How can I place an order for IRFD9020 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFD9020 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFD9020 reliable?
The price and inventory of IRFD9020 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFD9020 is usually 5 days.
3.What payment methods are accepted for IRFD9020?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFD9020 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFD9020?
IRFD9020 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFD9020 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFD9020?
For technical support, including IRFD9020 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFD9020 requirements.
6.How does Aetrix verify that IRFD9020 is sourced from the original manufacturer or authorized distributors?
All IRFD9020 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFD9020 meets industry standards.
7.What is the process for return or replacement of IRFD9020?
All IRFD9020 units undergo pre-shipment inspection (PSI). If there is an issue with IRFD9020, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFD9020 part is unused and in its original packaging.
Return procedure for IRFD9020:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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