Vishay Siliconix IRFD9020PBF
- Part No.:
- IRFD9020PBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 4-DIP (0.300", 7.62mm)
- Datasheet:
-
IRFD9020PBF.pdf
- Description:
- MOSFET P-CH 60V 1.6A 4DIP
- Quantity:
- Payment:

- Shipping:

Inventory:1,250
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Product details
Overview
IRFD9020PBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in HVMDIP (4-pin DIP) package, rated for -60 V VDS, 0.28 Ω RDS(on) at VGS = -10 V, and 1.6 A continuous drain current at 25 °C. It serves as a high-reliability, low-cost switching device in DC-DC converters, motor control circuits, and load-switching applications requiring ruggedized avalanche capability and 175 °C operation.
For engineers reviewing the IRFD9020PBF datasheet, IRFD9020PBF pinout, IRFD9020PBF application, or IRFD9020PBF equivalent, key selection criteria include its -60 V breakdown rating, repetitive avalanche energy (0.13 mJ), fast switching (13 ns turn-on delay), body diode recovery time (100–200 ns), and thermal resistance (120 °C/W junction-to-ambient).
Technical Context
This P-channel MOSFET uses third-generation silicon technology optimized for cost-sensitive, medium-power switching. Its dual-drain configuration provides enhanced thermal conduction to the PCB, enabling up to 1 W power dissipation without heatsinking. The device features dynamic dV/dt immunity (-4.5 V/ns) and is rated for repetitive avalanche under controlled inductive conditions (IAR = -1.6 A).
The HVMDIP package supports automated insertion and vertical stacking on 0.1" pitch headers. Internal source and drain inductances (LS = 6.0 nH, LD = 4.0 nH) are specified to support accurate switching waveform modeling in gate-drive design and EMI analysis.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -60 V - Maximum blocking voltage before avalanche onset; defines usable input voltage range in high-side switch configurations. |
| RDS(on) | 0.28 Ω @ VGS = -10 V - Determines conduction loss (I²R) in linear and switching modes; enables <1.3 W total dissipation at 1.6 A. |
| Qg | 19 nC - Total gate charge required for full enhancement; sets minimum driver current and switching speed limits in PWM circuits. |
| ID (continuous) | -1.6 A @ TA = 25 °C - Safe steady-state current with natural convection; derates to -1.1 A at 100 °C ambient. |
| EAS | 140 mJ (single-pulse) - Energy-handling capacity during unclamped inductive switching; critical for relay/snubberless solenoid drive. |
| TJ range | -55 to +175 °C - Enables operation in automotive under-hood, industrial motor drives, and sealed power supplies without derating. |
| dV/dt rating | -4.5 V/ns - Immunity to false turn-on from rapid voltage transients; reduces need for external gate clamping in noisy environments. |
Pinout & Package
The IRFD9020PBF uses the HVMDIP (High Voltage Mini-DIP) 4-pin through-hole package. Dual drain leads (D1, D2) provide parallel current paths and serve as thermal anchors to the PCB ground plane. Package dimensions: 8.38 mm × 10.79 mm × 7.36 mm (L × W × H), 0.1" pin pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Pin 1 & Pin 4) | Drain (dual) | Parallel-connected drain terminals; both must be soldered to same net for rated current and thermal performance. |
| G (Pin 2) | Gate | Control terminal; requires -10 V for full enhancement; ±20 V absolute max gate-source voltage. |
| S (Pin 3) | Source | Reference node for gate drive; connects to load return or system ground in high-side switch topologies. |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Supports reliable operation under repeated inductive switching stress (IAR = -1.6 A, EAR = 0.13 mJ), eliminating need for external snubbers in many relay/motor drive designs. |
| Dynamic dV/dt immunity | -4.5 V/ns threshold prevents spurious turn-on during fast bus transients-critical in shared-rail industrial controls and battery disconnect systems. |
| 175 °C operating temperature | Enables deployment in thermally constrained enclosures (e.g., sealed LED drivers, automotive junction boxes) without forced air or heatsinks. |
| End stackable HVMDIP | Allows vertical board stacking of multiple units on standard 0.1" headers-reducing footprint in multi-channel power distribution modules. |
| Low-cost machine-insertable package | HVMDIP eliminates SMT reflow complexity while maintaining thermal performance comparable to SO-8 equivalents in ≤1 W applications. |
Applications
| DC-DC Buck Converter High-Side Switch | Industrial Relay Driver |
|---|---|
Use Scenario: 24 V input buck regulator supplying 15 V/1 A to PLC I/O modules in factory automation cabinets. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch controlling power delivery during PWM on-time; body diode conducts during off-time. Use Value: 0.28 Ω RDS(on) minimizes conduction loss (<670 mW at 1.6 A), while 175 °C rating ensures reliability in enclosed 70 °C ambient environments. |
Use Scenario: Solid-state replacement for electromechanical relays driving 24 V DC solenoid valves in HVAC control panels. IC Role / Device Role / Timing Role: Load switch isolating valve coil from supply; avalanche rating absorbs inductive kickback without external flyback diode. Use Value: Repetitive avalanche energy (0.13 mJ) handles >10⁵ switching cycles without degradation; dual-drain layout improves thermal coupling to PCB copper pour. |
| Automotive Body Control Module (BCM) | LED Load Switch for Commercial Lighting |
Use Scenario: Power distribution to window lift motors and door lock actuators in 12 V vehicle electrical systems. IC Role / Device Role / Timing Role: High-side switch enabling centralized control and short-circuit protection via current sensing at source node. Use Value: -60 V VDS withstands load-dump transients (ISO 7637-2 Pulse 5a); -55 to +175 °C rating meets AEC-Q101 ambient requirements. |
Use Scenario: On/off control of 48 V LED strings in streetlight fixtures with thermal management constraints. IC Role / Device Role / Timing Role: Low-duty-cycle power switch activated by microcontroller GPIO; body diode reverse recovery (100–200 ns) limits switching loss during PWM dimming. Use Value: Fast trr and low Qrr (0.32–0.64 μC) reduce heat generation during 1–10 kHz dimming; HVMDIP simplifies manual repair in field-deployed units. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFD9024PBF | VDS = -60 V, RDS(on) = 0.18 Ω @ -10 V, Qg = 24 nC, same HVMDIP package | Lower on-resistance but higher gate charge; better for lower-loss static switching, worse for high-frequency PWM | Select when conduction loss dominates over switching loss and thermal margin is tight. |
| STP12PF06 | VDS = -60 V, RDS(on) = 0.22 Ω @ -10 V, TO-220 package, no avalanche rating | Larger footprint, no repetitive avalanche spec; requires external flyback protection in inductive loads | Choose only if PCB space allows TO-220 and application avoids unclamped inductive switching. |
Compared with IRFD9020PBF, IRFD9024PBF offers lower conduction loss but demands stronger gate drive; STP12PF06 trades ruggedness for thermal mass and lacks avalanche qualification-making IRFD9020PBF the optimal balance of robustness, size, and cost for mid-power industrial switching.
Availability
IRFD9020PBF is available at Aetrix Electronics and suitable for DC-DC converters, industrial relay drivers, and automotive body control modules requiring stable component supply, long-term lifecycle support, and lead-free compliance.
Supply support for IRFD9020PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power management solutions for industrial, automotive, and computing markets.
The IRFD series targets cost-sensitive, medium-power switching applications where ruggedness, thermal performance, and through-hole manufacturability are prioritized over ultra-low RDS(on) or SMT density.
FAQ
What is the maximum continuous drain current for IRFD9020PBF at 100 °C ambient temperature?
The IRFD9020PBF supports -1.1 A continuous drain current at TA = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limitations of the HVMDIP package's 120 °C/W junction-to-ambient resistance. At higher ambient temperatures, further reduction is required to maintain TJ ≤ 175 °C. The IRFD9020PBF datasheet specifies linear derating beyond 25 °C using 0.0083 W/°C.
Does IRFD9020PBF require a gate resistor for safe operation?
Yes-IRFD9020PBF benefits from an external gate resistor (typically 10–100 Ω) to control dI/dt and suppress ringing caused by its internal LS (6.0 nH) and LD (4.0 nH). The datasheet's switching time test circuit (Fig. 10b) uses Rg = 18 Ω. Omitting it risks overshoot, shoot-through in half-bridge configurations, and accelerated gate oxide wear in IRFD9020PBF.
Can IRFD9020PBF replace an N-channel MOSFET in a high-side switch without level shifting?
No-IRFD9020PBF is a P-channel device and can operate as a high-side switch with gate driven relative to source (e.g., 0 V gate = ON, -10 V gate = fully enhanced), eliminating the need for bootstrap or isolated gate drivers required by N-channel high-side switches. However, its RDS(on) is higher than comparable N-channel parts, so IRFD9020PBF is selected for simplicity-not efficiency-in such roles.
Is IRFD9020PBF qualified for automotive applications?
The IRFD9020PBF is not AEC-Q101 qualified, though its -55 to +175 °C operating range and avalanche rating align with many automotive under-hood thermal requirements. For production automotive use, Vishay recommends AEC-Q101-qualified variants like the SQ-series; IRFD9020PBF remains suitable for non-safety-critical aftermarket or industrial transport systems where formal qualification is not mandated.
What is the body diode forward voltage of IRFD9020PBF at rated current?
The IRFD9020PBF body diode exhibits VSD = -6.3 V at IS = -1.6 A and TJ = 25 °C with VGS = 0 V. This relatively high forward drop reflects its optimized switching-rather than diode-performance. In applications relying on body diode conduction (e.g., synchronous rectification), this value directly impacts power loss and thermal design for IRFD9020PBF.
IRFD9020PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- 4-DIP (0.300", 7.62mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 280mOhm @ 960mA, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1µA
- Gate Charge (Qg) (Max) @ Vgs:
- 19 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 570 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.3W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 4-HVMDIP
IRFD9020PBF FAQ
1.How can I place an order for IRFD9020PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFD9020PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFD9020PBF reliable?
The price and inventory of IRFD9020PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFD9020PBF is usually 5 days.
3.What payment methods are accepted for IRFD9020PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFD9020PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFD9020PBF?
IRFD9020PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFD9020PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFD9020PBF?
For technical support, including IRFD9020PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFD9020PBF requirements.
6.How does Aetrix verify that IRFD9020PBF is sourced from the original manufacturer or authorized distributors?
All IRFD9020PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFD9020PBF meets industry standards.
7.What is the process for return or replacement of IRFD9020PBF?
All IRFD9020PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFD9020PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFD9020PBF part is unused and in its original packaging.
Return procedure for IRFD9020PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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