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Vishay Siliconix IRFD9024PBF
- Part No.:
- IRFD9024PBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 4-DIP (0.300", 7.62mm)
- Datasheet:
-
IRFD9024PBF.pdf
- Description:
- MOSFET P-CH 60V 1.6A 4DIP
- Quantity:
- Payment:
- Shipping:
Inventory:2,287
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Product details
Overview
IRFD9024PBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in HVMDIP (4-pin DIP) package, rated for -60 V VDS, 0.28 Ω RDS(on) at VGS = -10 V, 1.6 A continuous drain current at 25 °C, and 175 °C maximum junction temperature. It serves as a high-reliability, fast-switching high-side switch in DC-DC converters, motor control circuits, and industrial power supplies.
For engineers reviewing the IRFD9024PBF datasheet, IRFD9024PBF pinout, IRFD9024PBF application, or IRFD9024PBF equivalent, this page delivers verified electrical parameters, thermal performance data, avalanche capability, body diode recovery metrics, and real-world design context for high-voltage P-channel switching in space-constrained through-hole systems.
Technical Context
This device belongs to Vishay's third-generation high-voltage P-channel MOSFET family optimized for ruggedness and cost-effective automated assembly. Its dual-drain configuration provides enhanced thermal conduction to the PCB, enabling up to 1 W power dissipation without heatsinking under natural convection.
The IRFD9024PBF features repetitive avalanche rating (IAR = -1.6 A, EAR = 0.13 mJ), dynamic dV/dt immunity (-4.5 V/ns), and fast switching (td(on) = 13 ns, tf = 29 ns) with low gate charge (Qg = 19 nC), making it suitable for hard-switched topologies where voltage transients and unclamped inductive energy are present.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -60 V - Maximum blocking voltage for high-side P-channel operation in ≤60 V rail systems |
| RDS(on) | 0.28 Ω @ VGS = -10 V - Low conduction loss enabling ≥1.3 W dissipation in HVMDIP package |
| Qg | 19 nC - Enables efficient gate drive with standard logic-level or dedicated P-channel drivers |
| ID (cont.) | -1.6 A @ TA = 25 °C - Sustained load current capability without forced airflow |
| TJ max | +175 °C - Supports operation in harsh industrial environments and sealed enclosures |
| EAS | 140 mJ - Single-pulse avalanche energy tolerance for robustness against inductive kickback |
| VSD | -6.3 V @ IS = -1.6 A - Forward voltage of integral body diode, relevant for synchronous rectification or freewheeling paths |
Pinout & Package
HVMDIP (High-Voltage Mini-DIP) package: 4-pin through-hole, 0.1" pin pitch, dual-drain leads (pins 1 & 4), gate (pin 2), source (pin 3). Molded plastic case with internal thermal path from dual drains to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 & 4 (Drain) | Power output node / high-side switch terminal | Dual-drain configuration reduces effective RDS(on) and improves thermal coupling to PCB ground plane |
| 2 (Gate) | Control input | Threshold voltage -2.0 to -4.0 V enables compatibility with -5 V or -10 V gate drivers; ±20 V VGS rating supports robust drive margin |
| 3 (Source) | Reference node / return path | Connected to system high-side rail reference; body diode anode, enabling reverse-current freewheeling |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Rated for repeated unclamped inductive switching events (IAR = -1.6 A, EAR = 0.13 mJ), reducing need for external snubbers in relay/motor drive circuits |
| Dynamic dV/dt immunity | -4.5 V/ns - Resists false turn-on during high dv/dt transients in noisy industrial environments |
| 175 °C operating temperature | Enables deployment in sealed power modules or high-ambient-temperature enclosures without derating penalties |
| End stackable HVMDIP | Allows vertical stacking of multiple units on 0.1" grid for compact multi-channel designs or redundancy |
| Fast switching with low Qg | 19 nC total gate charge and 29 ns fall time support >100 kHz switching in buck or inverting topologies |
Applications
| Industrial Motor Control | DC-DC Converter High-Side Switch |
|---|---|
|
Use Scenario: Driving brushed DC motors in programmable logic controller (PLC) I/O modules with bidirectional braking and stall protection. IC Role / Device Role / Timing Role: P-channel high-side switch controlling motor voltage rail; body diode handles freewheeling current during PWM off-time. Use Value: Repetitive avalanche rating absorbs back-EMF spikes during sudden motor stop; 175 °C rating ensures reliability in enclosed cabinets. |
Use Scenario: High-side switch in non-isolated buck converter for 24 V to 5 V conversion in factory automation sensors. IC Role / Device Role / Timing Role: Main power switch operating at 200 kHz; low RDS(on) minimizes conduction loss while fast switching reduces transition loss. Use Value: 0.28 Ω RDS(on) and 19 nC Qg enable >92% efficiency at 1 A load; HVMDIP allows manual rework and board-level thermal management. |
| Power Supply OR-ing Circuit | Hot-Swap Controller Back-End Switch |
|
Use Scenario: Dual-redundant 48 V telecom power supply outputs combined via OR-ing to feed common load. IC Role / Device Role / Timing Role: P-channel MOSFET used as ideal diode replacement; gate driven by dedicated OR-ing controller. Use Value: Low VGS(th) (-2.0 to -4.0 V) enables precise turn-on control; body diode reverse recovery (trr = 100–200 ns) limits cross-conduction during switchover. |
Use Scenario: Inrush-limited hot-swap circuit protecting backplane from capacitive loading during board insertion. IC Role / Device Role / Timing Role: High-side switch controlled by hot-swap IC to ramp VOUT linearly; withstands full 48 V rail during fault conditions. Use Value: -60 V VDS rating provides 20% margin over 48 V systems; 140 mJ EAS tolerates short-circuit energy during startup faults. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFD9120PBF | VDS = -200 V, RDS(on) = 1.4 Ω @ -10 V, Qg = 22 nC - higher voltage rating but higher on-resistance and gate charge | Better suited for 100–200 V bus applications (e.g., AC/DC front-end); less efficient at ≤60 V due to higher RDS(on) | Select IRFD9120PBF only when >100 V blocking is required; IRFD9024PBF offers superior efficiency and thermal performance in 60 V systems. |
| STP12PF06 | VDS = -60 V, RDS(on) = 0.32 Ω @ -10 V, Qg = 25 nC, TO-220 package - same voltage rating but higher RDS(on), larger footprint, and no dual-drain thermal advantage | Requires heatsink above ~0.8 A; not stackable; incompatible with automated DIP insertion | Choose IRFD9024PBF for space-constrained, stackable, or high-reliability through-hole designs; STP12PF06 fits legacy TO-220 layouts requiring higher current. |
Compared with IRFD9120PBF and STP12PF06, the IRFD9024PBF delivers optimal balance of low RDS(on), fast switching, thermal efficiency via dual-drain DIP packaging, and ruggedness for 60 V-class industrial switching-without sacrificing manufacturability or board-level thermal management.
Availability
IRFD9024PBF is available at Aetrix Electronics and suitable for industrial motor control, DC-DC converter high-side switching, and hot-swap protection circuits requiring stable component supply, long-term lifecycle support, and traceable Pb-free sourcing.
Supply support for IRFD9024PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on reliability, ruggedness, and application-specific optimization.
The IRFD9024PBF belongs to Vishay's HVMDIP power MOSFET product line, engineered for cost-sensitive, high-reliability through-hole power switching in industrial, telecom, and automotive-qualified systems where thermal management, avalanche robustness, and automated assembly are critical.
FAQ
What is the maximum continuous drain current for IRFD9024PBF at 100 °C ambient temperature?
The IRFD9024PBF supports -1.1 A continuous drain current at TA = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limitations of the HVMDIP package with RthJA = 120 °C/W. At higher ambient temperatures, current must be further reduced using the 0.0083 W/°C linear derating factor. The IRFD9024PBF maintains safe operation up to 175 °C junction temperature under these conditions.
Does IRFD9024PBF have avalanche capability, and how is it specified?
Yes, the IRFD9024PBF is both single-pulse and repetitive avalanche rated. Its single-pulse avalanche energy (EAS) is 140 mJ, tested under VDD = -25 V, L = 15 mH, Rg = 25 Ω. Repetitive avalanche is rated at IAR = -1.6 A and EAR = 0.13 mJ, with pulse width limited by junction temperature. This capability is intrinsic to the device structure and does not require external components to function.
What is the gate threshold voltage range for IRFD9024PBF, and how does it affect drive requirements?
The IRFD9024PBF has a gate-source threshold voltage (VGS(th)) range of -2.0 V to -4.0 V at ID = -250 μA. This allows reliable turn-on with -5 V logic-level drivers while maintaining noise immunity. Full enhancement requires VGS ≤ -10 V to achieve rated RDS(on) = 0.28 Ω. The IRFD9024PBF thus supports both standard and logic-compatible gate drive architectures without level-shifting.
How does the dual-drain configuration of IRFD9024PBF improve thermal performance?
The IRFD9024PBF uses pins 1 and 4 as parallel drain terminals, effectively doubling the copper area for heat conduction from the die to the PCB. This configuration lowers thermal resistance and enables up to 1 W power dissipation in natural convection. Unlike single-drain DIP packages, the dual-drain layout in the IRFD9024PBF reduces localized heating and improves long-term reliability in thermally dense layouts.
Is IRFD9024PBF compatible with lead-free soldering processes?
Yes, the IRFD9024PBF is Pb-free and RoHS-compliant, qualified for peak soldering temperatures up to 300 °C for 10 seconds, per its package specification. The device uses matte tin-plated leads and meets JEDEC J-STD-020 moisture sensitivity level (MSL) requirements for standard surface-mount reflow-even though it is a through-hole part. This ensures compatibility with modern lead-free assembly lines handling mixed-technology boards.
IRFD9024PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- 4-DIP (0.300", 7.62mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 280mOhm @ 960mA, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 19 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 570 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.3W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 4-HVMDIP
IRFD9024PBF FAQ
1.How can I place an order for IRFD9024PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFD9024PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFD9024PBF reliable?
The price and inventory of IRFD9024PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFD9024PBF is usually 5 days.
3.What payment methods are accepted for IRFD9024PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFD9024PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFD9024PBF?
IRFD9024PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFD9024PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFD9024PBF?
For technical support, including IRFD9024PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFD9024PBF requirements.
6.How does Aetrix verify that IRFD9024PBF is sourced from the original manufacturer or authorized distributors?
All IRFD9024PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFD9024PBF meets industry standards.
7.What is the process for return or replacement of IRFD9024PBF?
All IRFD9024PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFD9024PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFD9024PBF part is unused and in its original packaging.
Return procedure for IRFD9024PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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