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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFD9120

Name: IRFD9120
Brand: Vishay Siliconix
SKU: IRFD9120
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFD9120

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 4-DIP (0.300", 7.62mm)

Datasheet:: IRFD9120.pdf

Description:: MOSFET P-CH 100V 1A 4DIP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFD9120 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in HVMDIP (4-pin DIP) package, rated for -100 V V_DS, 0.60 Ω R_DS(on) at V_GS = -10 V, and 1.3 W power dissipation at 25 °C ambient. It features repetitive avalanche rating, fast switching (t_r = 29 ns), and 175 °C maximum junction temperature - used in DC-DC converter high-side switches and industrial relay drivers.

For engineers reviewing the IRFD9120 datasheet, IRFD9120 pinout, IRFD9120 application, or IRFD9120 equivalent, key selection criteria include its negative-channel logic-level compatibility, body diode recovery performance (t_rr = 98–200 ns), thermal resistance (R_thJA = 120 °C/W), and lead-free IRFD9120PbF ordering variant.

Technical Context

This device operates as a high-voltage, low-current P-channel switch with integrated body diode, optimized for unclamped inductive load switching. Its gate threshold voltage range (-2.0 to -4.0 V) supports direct TTL/CMOS drive, while dynamic dv/dt rating (-5.5 V/ns) ensures robustness against parasitic turn-on in high-noise environments.

The HVMDIP package uses dual drain leads as a thermal path to the PCB, enabling up to 1 W power dissipation without heatsinking. Internal source/drain inductances (L_S = 6.0 nH, L_D = 4.0 nH) are characterized for accurate switching waveform modeling in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-100 V - supports high-side switching in 48 V and 72 V industrial bus systems
R_DS(on)	0.60 Ω max at V_GS = -10 V - limits conduction loss to ≤ 0.36 W at 1 A continuous drain current
Q_g	18 nC max - determines gate drive power requirement and switching speed in PWM circuits
I_D (cont.)	-1.0 A at T_A = 25 °C - defines maximum steady-state load current without forced cooling
E_AS	140 mJ single-pulse avalanche energy - enables reliable operation under inductive turn-off stress without snubber
t_r/t_f	29 ns / 25 ns - supports >1 MHz switching in resonant and quasi-resonant converters
T_J range	-55 to +175 °C - qualified for under-hood automotive auxiliary modules and industrial motor controls

Pinout & Package

HVMDIP (High-Voltage Mini-DIP) package: 4-pin through-hole, 0.1" pin pitch, dual drain leads (D1/D2) for enhanced thermal conduction to PCB copper pour. Overall dimensions: 8.38 mm × 10.79 mm × 7.36 mm (L × W × H).

Pin/Terminal	Circuit Role	Design Meaning
D1, D2	Drain (dual parallel)	Shared high-voltage output node; both pins electrically identical and thermally coupled to die backside
G	Gate	Control input requiring -10 V for full enhancement; threshold range (-2.0 to -4.0 V) allows direct microcontroller interface
S	Source	Reference node for gate drive; connects to positive rail in high-side configuration; carries body diode forward current

Key Features

Feature	Design Value
Repetitive avalanche rated	Enables reliable operation in inductive load switching without external clamping components
Dynamic dv/dt rating (-5.5 V/ns)	Prevents spurious turn-on during fast voltage transients in motor drive half-bridges
175 °C operating temperature	Supports sealed enclosure designs without active cooling in industrial control panels
End stackable DIP format	Allows vertical stacking of multiple IRFD9120 units on same PCB footprint for parallel current sharing
Lead (Pb)-free IRFD9120PbF	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile

Applications

Industrial Relay Drivers	DC-DC Converter High-Side Switch
Use Scenario: Driving 24–48 V DC coil relays in programmable logic controllers with microcontroller GPIO outputs. IC Role / Device Role / Timing Role: P-channel high-side switch controlling relay coil energization/de-energization with fast turn-off to suppress back-EMF. Use Value: Integrated avalanche capability absorbs inductive kickback without external TVS; 175 °C rating ensures reliability in enclosed cabinets.	Use Scenario: High-side synchronous rectifier or main switch in isolated flyback or forward converters for telecom power supplies. IC Role / Device Role / Timing Role: Primary switching element handling up to 1 A load current at 100 kHz–500 kHz PWM frequencies. Use Value: Low Q_g (18 nC) and fast t_r/t_f reduce switching losses; dual drain leads improve thermal coupling to PCB ground plane.
Motor Control Braking Circuits	Hot-Swap Power Sequencing
Use Scenario: Dynamic braking path for small DC motors in factory automation actuators using reverse-current conduction. IC Role / Device Role / Timing Role: Body diode conducts reverse current during motor deceleration; MOSFET channel clamps voltage during regenerative events. Use Value: Verified t_rr (98–200 ns) and Q_rr (0.33–0.66 μC) ensure controlled diode recovery without voltage overshoot.	Use Scenario: Inrush current limiting and sequencing control for 12–48 V backplane power rails in modular test equipment. IC Role / Device Role / Timing Role: Soft-start switch placed between input supply and downstream DC-DC stage to prevent system brownout. Use Value: R_DS(on) stability over temperature (-0.10 V/°C V_DS tempco) maintains predictable current limiting across operating range.

Industrial Relay Drivers

DC-DC Converter High-Side Switch

Use Scenario: Driving 24–48 V DC coil relays in programmable logic controllers with microcontroller GPIO outputs.

IC Role / Device Role / Timing Role: P-channel high-side switch controlling relay coil energization/de-energization with fast turn-off to suppress back-EMF.

Use Value: Integrated avalanche capability absorbs inductive kickback without external TVS; 175 °C rating ensures reliability in enclosed cabinets.

Use Scenario: High-side synchronous rectifier or main switch in isolated flyback or forward converters for telecom power supplies.

IC Role / Device Role / Timing Role: Primary switching element handling up to 1 A load current at 100 kHz–500 kHz PWM frequencies.

Use Value: Low Q_g (18 nC) and fast t_r/t_f reduce switching losses; dual drain leads improve thermal coupling to PCB ground plane.

Motor Control Braking Circuits

Hot-Swap Power Sequencing

Use Scenario: Dynamic braking path for small DC motors in factory automation actuators using reverse-current conduction.

IC Role / Device Role / Timing Role: Body diode conducts reverse current during motor deceleration; MOSFET channel clamps voltage during regenerative events.

Use Value: Verified t_rr (98–200 ns) and Q_rr (0.33–0.66 μC) ensure controlled diode recovery without voltage overshoot.

Use Scenario: Inrush current limiting and sequencing control for 12–48 V backplane power rails in modular test equipment.

IC Role / Device Role / Timing Role: Soft-start switch placed between input supply and downstream DC-DC stage to prevent system brownout.

Use Value: R_DS(on) stability over temperature (-0.10 V/°C V_DS tempco) maintains predictable current limiting across operating range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFD120	N-channel counterpart with +100 V V_DS, same R_DS(on) and Q_g; requires high-side gate driver	Used where bootstrap or isolated gate drive is available; not suitable for direct logic-level high-side switching	Select IRFD120 only when gate drive architecture supports N-channel high-side placement
STP12PF06	P-channel, -60 V V_DS, 0.27 Ω R_DS(on), TO-220 package; higher current but lower voltage rating	Better for 24 V systems needing <2 A continuous current; incompatible with 48 V+ bus voltages	Choose STP12PF06 for cost-sensitive 24 V industrial controls where voltage margin is sufficient

Compared with IRFD120 and STP12PF06, the IRFD9120 uniquely balances -100 V rating, DIP-mounting, and logic-compatible gate drive in a single component - making it optimal for space-constrained, high-voltage, low-power high-side switching where gate drive simplicity and thermal integration matter.

Availability

IRFD9120 is available at Aetrix Electronics and suitable for industrial relay drivers, DC-DC converter high-side switches, and motor braking circuits requiring stable component supply and long-term obsolescence management.

Supply support for IRFD9120 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and resistive components with emphasis on ruggedness, precision, and high-reliability packaging.

The IRFD9120 belongs to Vishay's third-generation power MOSFET family designed specifically for cost-effective, machine-insertable, high-voltage switching in industrial control and power conversion - prioritizing avalanche robustness and thermal integration in compact DIP formats.

FAQ

What is the maximum continuous drain current for the IRFD9120 at 100 °C ambient temperature?

The IRFD9120 supports -0.70 A continuous drain current at T_A = 100 °C, derated linearly from -1.0 A at 25 °C using a factor of 0.0083 W/°C. This reflects thermal limitations of the HVMDIP package without heatsinking and must be verified against actual board layout and airflow conditions in the final design. The IRFD9120 datasheet specifies this limit in Absolute Maximum Ratings Table 1.

Does the IRFD9120 require a gate driver IC for microcontroller interfacing?

No - the IRFD9120 has a gate threshold voltage range of -2.0 V to -4.0 V, allowing direct connection to 3.3 V or 5 V logic outputs when configured as a high-side switch with source tied to V_CC. Full enhancement (R_DS(on) ≤ 0.60 Ω) requires V_GS ≤ -10 V, so for highest efficiency, a simple level-shifting circuit or dedicated P-channel gate driver is recommended. The IRFD9120's low Q_g (18 nC) minimizes drive strength requirements.

Can the IRFD9120 be used in parallel configurations?

Yes - the IRFD9120 is explicitly designed for end-stacking in parallel due to its HVMDIP package geometry and matched thermal characteristics. Dual drain leads provide symmetrical thermal paths, and the device's positive R_DS(on) temperature coefficient promotes current sharing. Layout best practices include equal-length gate traces, individual gate resistors, and shared source/drain copper pours. The IRFD9120's datasheet confirms this capability in the FEATURES section.

What is the body diode reverse recovery charge (Q_rr) specification for the IRFD9120?

The IRFD9120 exhibits Q_rr = 0.33–0.66 μC under test conditions of T_J = 25 °C, I_F = -6.8 A, and di/dt = 100 A/μs, as specified in the Diode Characteristics table. This value directly impacts switching losses and voltage overshoot during hard-commutation events. Designers should use this Q_rr range - not a typical-only value - when calculating total switching energy in the IRFD9120's application.

Is the IRFD9120PbF variant RoHS-compliant and halogen-free?

Yes - the IRFD9120PbF is Vishay's lead-free, RoHS-compliant version, fully compliant with Directive 2011/65/EU and JEDEC J-STD-020. Per Vishay documentation, it is also halogen-free per IEC 61249-2-21. The "PbF" suffix explicitly denotes lead-free termination, and the IRFD9120PbF shares identical electrical and thermal specifications with the legacy IRFD9120, differing only in plating composition.

IRFD9120 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: 4-DIP (0.300", 7.62mm)

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 1A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 600mA, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 390 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.3W (Ta)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 4-HVMDIP

IRFD9120 FAQ

1.How can I place an order for IRFD9120 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFD9120 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFD9120 reliable?

The price and inventory of IRFD9120 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFD9120 is usually 5 days.

3.What payment methods are accepted for IRFD9120?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFD9120 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFD9120?

IRFD9120 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFD9120 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFD9120?

For technical support, including IRFD9120 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFD9120 requirements.

6.How does Aetrix verify that IRFD9120 is sourced from the original manufacturer or authorized distributors?

All IRFD9120 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFD9120 meets industry standards.

7.What is the process for return or replacement of IRFD9120?

All IRFD9120 units undergo pre-shipment inspection (PSI). If there is an issue with IRFD9120, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFD9120 part is unused and in its original packaging.

Return procedure for IRFD9120:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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