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Vishay Siliconix IRFD9120PBF
- Part No.:
- IRFD9120PBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 4-DIP (0.300", 7.62mm)
- Datasheet:
-
IRFD9120PBF.pdf
- Description:
- MOSFET P-CH 100V 1A 4DIP
- Quantity:
- Payment:
- Shipping:
Inventory:12,419
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Product details
Overview
IRFD9120PBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in HVMDIP package, rated for -100 V VDS, 0.60 Ω RDS(on) at VGS = -10 V, and 1.3 W power dissipation at 25 °C ambient. It supports repetitive avalanche operation up to 0.13 mJ and operates from -55 °C to +175 °C junction temperature - used in DC-DC converter high-side switches and industrial relay drivers.
For engineers reviewing the IRFD9120PBF datasheet, IRFD9120PBF pinout, IRFD9120PBF application, or IRFD9120PBF equivalent, key selection criteria include its -100 V blocking capability, low gate charge (18 nC), fast switching (29 ns turn-off delay), thermal robustness (175 °C TJ), and machine-insertable HVMDIP packaging for automated assembly.
Technical Context
This device implements a ruggedized third-generation silicon process optimized for unclamped inductive switching, with dynamic dv/dt rating (-5.5 V/ns) and intrinsic body diode recovery (trr = 98–200 ns). Its dual-drain configuration provides enhanced thermal conduction to the PCB mounting surface.
The MOSFET features a negative gate-threshold voltage range (-2.0 to -4.0 V), enabling direct logic-level drive compatibility when paired with appropriate level-shifting circuitry. Its linear derating factor (0.0083 W/°C) and RthJA of 120 °C/W define thermal limits under natural convection conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -100 V - supports high-side switching in 48 V industrial bus systems without external clamping |
| RDS(on) | 0.60 Ω max at VGS = -10 V - enables ≤0.36 W conduction loss at 0.6 A continuous drain current |
| Qg | 18 nC max - determines gate driver strength requirement for <30 ns switching transitions |
| ID (continuous) | -1.0 A at 25 °C - defines maximum steady-state load current before thermal derating applies |
| EAS | 140 mJ single-pulse - withstands energy from inductive kickback in solenoid or motor control circuits |
| TJ range | -55 to +175 °C - qualified for under-hood automotive and industrial environments without derating |
| dv/dt rating | -5.5 V/ns - suppresses false turn-on during high-speed commutation in noisy EMI environments |
Pinout & Package
The IRFD9120PBF uses the HVMDIP (High Voltage Mini-DIP) package: 4-pin through-hole, 0.1" pin pitch, dual-drain configuration for thermal conduction. Dimensions: 8.38 mm × 10.79 mm × 7.36 mm (L × W × H), with leads extending 4.06 mm below body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Pin 1 & 4) | Drain (dual connection) | Primary high-voltage node; dual pins reduce resistance and improve heat transfer to PCB copper pour |
| G (Pin 2) | Gate | Control input requiring -10 V for full enhancement; threshold range -2.0 to -4.0 V enables partial turn-on at -5 V |
| S (Pin 3) | Source | Reference node for gate drive; connects to load return path and serves as body diode anode |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Withstands 0.13 mJ per pulse continuously - eliminates need for external snubbers in relay coil driving |
| Dynamic dv/dt immunity | -5.5 V/ns rating prevents spurious turn-on during fast voltage transients in motor drives |
| End stackable DIP | Enables vertical stacking of multiple units on 0.1" grid - saves board space in multi-channel power modules |
| 175 °C operating temperature | Validated operation without derating in sealed enclosures or high-ambient industrial settings |
| Fast switching | 29 ns turn-off delay + 25 ns fall time - reduces switching losses in 100 kHz DC-DC converters |
Applications
| Industrial Relay Drivers | High-Side Load Switches |
|---|---|
Use Scenario: Driving 24–48 V DC relays in PLC I/O modules where inductive kickback must be absorbed internally. IC Role / Device Role / Timing Role: P-channel high-side switch controlling relay coil current with integrated avalanche energy handling. Use Value: Eliminates external TVS/clamp diodes due to 140 mJ single-pulse avalanche rating and -5.5 V/ns dv/dt immunity. | Use Scenario: Powering isolated sensor subsystems in factory automation equipment requiring controlled hot-swap capability. IC Role / Device Role / Timing Role: High-side MOSFET enabling soft-start and current-limited power delivery to downstream loads. Use Value: 0.60 Ω RDS(on) minimizes voltage drop across switch while supporting 1.0 A continuous current at 25 °C ambient. |
| DC-DC Converter Sync Rectifiers | Motor Control Braking Circuits |
Use Scenario: Synchronous rectification in isolated flyback or forward converters operating up to 100 kHz switching frequency. IC Role / Device Role / Timing Role: Low-RDS(on) P-channel switch replacing Schottky diodes to improve efficiency in secondary-side regulation. Use Value: 18 nC total gate charge enables efficient gate drive with minimal driver power consumption and fast 29 ns turn-off delay. | Use Scenario: Dynamic braking of small DC motors in medical pumps and precision actuators using regenerative energy dissipation. IC Role / Device Role / Timing Role: High-voltage switch routing motor back-EMF into braking resistors during deceleration. Use Value: -100 V VDS rating safely handles peak back-EMF exceeding 60 V; body diode VSD = -6.3 V ensures low forward drop during freewheeling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFD120PBF | VDS = -100 V, RDS(on) = 0.45 Ω, Qg = 22 nC, same HVMDIP package | Lower on-resistance but higher gate charge - better for low-loss static switching, less optimal for high-frequency PWM | Select IRFD120PBF when conduction loss dominates; retain IRFD9120PBF for faster switching or tighter gate drive budget |
| STP12PF06 | VDS = -60 V, RDS(on) = 0.32 Ω, TO-220 package, no avalanche rating | Lower voltage rating and no repetitive avalanche spec - unsuitable for inductive loads above 40 V or unclamped switching | Use STP12PF06 only in low-voltage (<48 V), non-inductive applications where thermal mass of TO-220 is acceptable |
Compared with IRFD120PBF and STP12PF06, the IRFD9120PBF offers balanced trade-offs: sufficient avalanche ruggedness for relay/motor control, lower Qg than IRFD120PBF for faster edges, and higher VDS than STP12PF06 - making it uniquely suited for 48 V industrial high-side switching with minimal external protection.
Availability
IRFD9120PBF is available at Aetrix Electronics and suitable for industrial relay drivers, high-side load switches, and DC-DC converter synchronous rectifiers requiring stable component supply across extended production lifecycles.
Supply support for IRFD9120PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.
The IRFD9120PBF belongs to Vishay's HVMDIP power MOSFET family, engineered for cost-sensitive, machine-insertable applications demanding avalanche tolerance, thermal stability, and compatibility with legacy through-hole assembly infrastructure.
FAQ
What is the maximum continuous drain current for the IRFD9120PBF at 100 °C ambient temperature?
The IRFD9120PBF supports -0.70 A continuous drain current at TA = 100 °C, based on its linear derating factor of 0.0083 W/°C and 1.3 W maximum power dissipation at 25 °C. This value reflects thermal limitations of the HVMDIP package under natural convection, not semiconductor capability alone. The IRFD9120PBF maintains safe operation within its SOA curve up to this current when mounted on adequate copper area.
Does the IRFD9120PBF have a specified body diode reverse recovery time?
Yes, the IRFD9120PBF specifies trr = 98–200 ns under test conditions of TJ = 25 °C, IF = -6.8 A, and di/dt = 100 A/μs. This body diode recovery time directly impacts switching losses in synchronous rectifier and freewheeling applications. The IRFD9120PBF's trr performance is consistent with its intended use in medium-frequency DC-DC converters and motor control circuits.
Can the IRFD9120PBF be driven directly by a 5 V microcontroller GPIO pin?
No - the IRFD9120PBF has a gate-threshold voltage range of -2.0 to -4.0 V and requires -10 V for guaranteed RDS(on) = 0.60 Ω. A 5 V GPIO cannot produce negative gate voltage; level-shifting circuitry (e.g., charge pump or dedicated gate driver) is required. Driving the IRFD9120PBF with insufficient gate voltage risks excessive conduction loss and thermal runaway. Always verify gate drive compliance in the final IRFD9120PBF design.
Is the IRFD9120PBF RoHS-compliant and lead-free?
Yes, the IRFD9120PBF is lead (Pb)-free and RoHS-compliant, as confirmed by its "PbF" suffix and Vishay's material categorization documentation (www.vishay.com/doc?99912). The device meets EU RoHS Directive 2011/65/EU and associated amendments, with homogeneous lead content below 0.1 wt%. Full compliance data is available in Vishay's official declaration for document number 91139.
What is the thermal resistance from junction to ambient (RthJA) for the IRFD9120PBF?
The IRFD9120PBF has a maximum RthJA of 120 °C/W under standard JEDEC test conditions (single-layer 1 in² copper pad, no airflow). This value assumes minimal PCB copper; actual thermal performance improves significantly with larger copper pours or internal layers. For reliable operation, ensure the IRFD9120PBF's junction temperature remains ≤175 °C using this RthJA and measured ambient conditions.
IRFD9120PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- 4-DIP (0.300", 7.62mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 600mOhm @ 600mA, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 390 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.3W (Ta)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 4-HVMDIP
IRFD9120PBF FAQ
1.How can I place an order for IRFD9120PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFD9120PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFD9120PBF reliable?
The price and inventory of IRFD9120PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFD9120PBF is usually 5 days.
3.What payment methods are accepted for IRFD9120PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFD9120PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFD9120PBF?
IRFD9120PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFD9120PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFD9120PBF?
For technical support, including IRFD9120PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFD9120PBF requirements.
6.How does Aetrix verify that IRFD9120PBF is sourced from the original manufacturer or authorized distributors?
All IRFD9120PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFD9120PBF meets industry standards.
7.What is the process for return or replacement of IRFD9120PBF?
All IRFD9120PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFD9120PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFD9120PBF part is unused and in its original packaging.
Return procedure for IRFD9120PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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