Vishay Siliconix IRFD9210

Overview

IRFD9210 from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in HVMDIP (4-pin DIP) package, rated for -200 V drain-source voltage, 3.0 Ω R_DS(on) at V_GS = -10 V, and 1.0 W power dissipation. It supports repetitive avalanche operation (E_AS = 210 mJ), features fast switching (t_r = 12 ns), and is designed for high-voltage DC-DC converters and industrial power control circuits.

For engineers reviewing the IRFD9210 datasheet, IRFD9210 pinout, IRFD9210 application, or IRFD9210 equivalent, key selection criteria include its -200 V blocking capability, low gate charge (Q_g = 8.9 nC), thermal performance in through-hole mounting, and suitability for unclamped inductive switching in relay drivers and motor control H-bridge topologies.

Technical Context

This device operates as a high-voltage P-channel switch with gate threshold voltage between -2.0 V and -4.0 V, enabling logic-level-compatible drive when paired with appropriate level-shifting circuitry. Its internal body diode exhibits t_rr = 110–220 ns and Q_rr = 0.56–1.1 μC, supporting moderate-frequency freewheeling in flyback and buck-derived topologies.

The HVMDIP package integrates dual drain leads for enhanced thermal conduction to the PCB, delivering R_thJA ≤ 120 °C/W. Dynamic dV/dt rating of -5.0 V/ns and repetitive avalanche current I_AR = -0.40 A confirm ruggedness under transient overvoltage and inductive load commutation.

Key Specifications

Pinout & Package

The IRFD9210 is housed in a 4-pin HVMDIP (High Voltage Mini-DIP) package with dual drain leads (D1/D2) for improved thermal path to the PCB, 0.1" pin pitch, and end-stackable mechanical design. Lead length is 6.86–7.36 mm; overall package size is 7.87 × 10.79 × 6.86 mm (L × W × H).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.

Compared with IRFD120PBF and STP20PF06, the IRFD9210 uniquely balances -200 V capability, DIP manufacturability, and 1 W ambient-rated power in a single component-making it the only option among the three qualified for high-voltage, leaded, no-heatsink industrial control applications.

Availability

IRFD9210 is available at Aetrix Electronics and suitable for industrial relay drivers, high-voltage DC-DC converters, motor control H-bridges, and power distribution switches requiring stable component supply and long-term obsolescence management.

Supply support for IRFD9210 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFD9210 belongs to Vishay's high-voltage power MOSFET family engineered for rugged, through-hole mounted switching in harsh environments-emphasizing avalanche robustness, dynamic dV/dt immunity, and automated assembly compatibility.

FAQ

What is the maximum continuous drain current for the IRFD9210 at 100 °C ambient temperature?

The IRFD9210 supports a continuous drain current of -0.25 A at T_A = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the HVMDIP package without heatsinking. At 25 °C ambient, the rating increases to -0.40 A. Designers must verify junction temperature using R_thJA ≤ 120 °C/W and actual power dissipation to ensure safe operation within the -55 to +150 °C T_J range.

Does the IRFD9210 require a gate driver IC, or can it be driven directly from a microcontroller?

The IRFD9210 cannot be reliably driven directly from most microcontrollers due to its gate threshold voltage range of -2.0 V to -4.0 V and required V_GS = -10 V for full R_DS(on) specification. A dedicated level-shifting gate driver (e.g., TC4427 configured for inverting high-side drive) is necessary to deliver sufficient negative gate voltage and peak current (≥100 mA) for fast switching. Direct MCU drive risks partial turn-on and excessive conduction loss.

Is the IRFD9210 suitable for synchronous rectification in a flyback converter?

The IRFD9210 is not recommended for synchronous rectification due to its relatively high R_DS(on) of 3.0 Ω and limited continuous current rating (-0.40 A). Synchronous rectifiers demand low on-resistance and high current capability to outperform Schottky diodes. However, the IRFD9210 is well-suited as the primary-side high-voltage switch in flyback converters up to 170 V DC input, where its -200 V rating and avalanche capability provide robustness.

What is the significance of the "PbF" suffix in IRFD9210PbF?

The "PbF" suffix in IRFD9210PbF denotes lead (Pb)-free compliance per RoHS Directive 2011/65/EU and Vishay's material categorization standard. This version uses matte tin-plated leads and Pb-free mold compound, with identical electrical and thermal specifications to legacy leaded versions. The IRFD9210PbF is the only orderable variant per Vishay's current documentation and qualifies for environmentally regulated industrial and consumer applications.

How does the dual-drain configuration of the IRFD9210 improve thermal performance?

The dual-drain configuration (Pins 1 and 4) in the IRFD9210 provides two parallel copper paths from the die to the PCB, effectively halving the thermal resistance contribution of the drain connection. Combined with the HVMDIP package's low-profile design and direct thermal coupling to the board, this structure achieves R_thJA ≤ 120 °C/W-enabling 1.0 W power dissipation at 25 °C ambient without a heatsink. It also improves current sharing in paralleled configurations.