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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFD9210PBF

Name: IRFD9210PBF
Brand: Vishay Siliconix
SKU: IRFD9210PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFD9210PBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 4-DIP (0.300", 7.62mm)

Datasheet:: IRFD9210PBF.pdf

Description:: MOSFET P-CH 200V 400MA 4DIP

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Product details

Overview

IRFD9210PBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in HVMDIP (4-pin DIP) package, rated for -200 V V_DS, 3.0 Ω R_DS(on) at V_GS = -10 V, and 1.0 W power dissipation. It supports repetitive avalanche operation, fast switching (t_r = 12 ns), and automatic insertion in industrial power control circuits.

For engineers reviewing the IRFD9210PBF datasheet, IRFD9210PBF pinout, IRFD9210PBF application, or IRFD9210PBF equivalent, key selection criteria include its -200 V blocking capability, low gate charge (8.9 nC), thermal performance in through-hole mounting, and suitability for high-voltage DC-DC converters, relay drivers, and load switches where ruggedness and dV/dt immunity are critical.

Technical Context

This device uses Vishay's high-voltage DMOS process to achieve low on-resistance with high transconductance and extreme ruggedness. Its P-channel topology enables high-side switching without level-shifting circuitry, and its dual-drain configuration improves thermal conduction to the PCB.

The IRFD9210PBF features dynamic dV/dt rating (-5.0 V/ns), repetitive avalanche capability (I_AR = -0.40 A), and body diode recovery time (t_rr = 110–220 ns), making it suitable for inductive load switching in unclamped inductive turn-off conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-200 V - Supports high-voltage DC bus isolation up to 200 V reverse polarity
R_DS(on)	3.0 Ω @ V_GS = -10 V - Enables <1 W conduction loss at 0.4 A continuous drain current
Q_g	8.9 nC - Low gate drive energy requirement for efficient PWM switching at 100 kHz+
P_D	1.0 W @ T_A = 25 °C - Requires minimal heatsinking in DIP-mounted applications
t_r/t_f	12 ns / 13 ns - Enables fast transition between on/off states with reduced switching losses
E_AS	210 mJ - Withstands single-pulse inductive energy without failure in relay or solenoid drive
R_thJA	120 °C/W - Thermal resistance confirms need for copper pour or forced airflow above ~0.3 W dissipation

Pinout & Package

HVMDIP (High-Voltage Mini-DIP) package: 4-pin through-hole, 0.1" pin pitch, dual drain leads (D1/D2) for enhanced thermal path to PCB ground plane; total package height ≤ 7.36 mm; lead-free per RoHS.

Pin/Terminal	Circuit Role	Design Meaning
D (Pin 1 & 4)	Drain (dual)	Primary high-voltage power terminal; both pins electrically connected internally and serve as thermal interface to PCB
G (Pin 2)	Gate	Control input requiring -10 V for full enhancement; threshold range -2.0 to -4.0 V ensures logic-level compatibility with -5 V drivers
S (Pin 3)	Source	Reference node for gate drive and load return; connects to system ground or positive rail in high-side switch configurations

Key Features

Feature	Design Value
Repetitive avalanche rated	Enables reliable operation under unclamped inductive switching (e.g., relay coils) without external snubbers
Dynamic dV/dt rating	-5.0 V/ns immunity prevents false turn-on during high-slew-rate voltage transients in noisy industrial environments
End stackable DIP format	Allows vertical stacking of multiple units on same PCB footprint for parallel current handling or redundancy
Fast switching with low Q_gd	3.9 nC gate-drain charge minimizes Miller plateau duration, improving controllability during hard switching
Low R_DS(on) temperature coefficient	Negative ΔV_DS/T_J (-0.23 V/°C) stabilizes breakdown voltage across -55 to +150 °C operating range

Applications

Industrial Relay Driver	High-Voltage DC-DC Converter
Use Scenario: Driving 24–48 V DC electromagnetic relays in PLC I/O modules with frequent make/break cycles. IC Role / Device Role / Timing Role: High-side P-channel switch controlling relay coil current; operates in linear and saturated regions during turn-on/turn-off transitions. Use Value: Repetitive avalanche rating absorbs coil flyback energy without clamping diodes; -200 V V_DS headroom prevents breakdown during 100 V transients.	Use Scenario: Synchronous rectification or primary-side switch in isolated flyback or forward converters up to 100 kHz. IC Role / Device Role / Timing Role: Power switching element handling high-voltage DC input; used in discontinuous conduction mode (DCM) with controlled dV/dt. Use Value: 12 ns rise time and 8.9 nC Q_g reduce switching losses; dual drain improves thermal coupling to PCB for stable 1 W operation.
Automotive Load Switch	Programmable Power Supply
Use Scenario: Controlling 12 V/24 V battery-fed loads (e.g., fans, heaters) in commercial vehicle subsystems with overvoltage protection. IC Role / Device Role / Timing Role: High-side load switch with integrated body diode for reverse-polarity protection and inductive kick management. Use Value: Body diode V_SD = -5.8 V at -0.4 A enables low-loss freewheeling; -55 to +150 °C T_J rating supports under-hood deployment.	Use Scenario: Precision programmable output stage in benchtop power supplies requiring adjustable current limiting and soft-start. IC Role / Device Role / Timing Role: Adjustable series pass element controlled by op-amp feedback loop; operates in linear region for regulation. Use Value: Low R_DS(on) tolerance (±15% typical) and stable g_fs = 0.27 S ensure predictable current compliance; ease of paralleling allows scaling to higher output currents.

Industrial Relay Driver

High-Voltage DC-DC Converter

Use Scenario: Driving 24–48 V DC electromagnetic relays in PLC I/O modules with frequent make/break cycles.

IC Role / Device Role / Timing Role: High-side P-channel switch controlling relay coil current; operates in linear and saturated regions during turn-on/turn-off transitions.

Use Value: Repetitive avalanche rating absorbs coil flyback energy without clamping diodes; -200 V V_DS headroom prevents breakdown during 100 V transients.

Use Scenario: Synchronous rectification or primary-side switch in isolated flyback or forward converters up to 100 kHz.

IC Role / Device Role / Timing Role: Power switching element handling high-voltage DC input; used in discontinuous conduction mode (DCM) with controlled dV/dt.

Use Value: 12 ns rise time and 8.9 nC Q_g reduce switching losses; dual drain improves thermal coupling to PCB for stable 1 W operation.

Automotive Load Switch

Programmable Power Supply

Use Scenario: Controlling 12 V/24 V battery-fed loads (e.g., fans, heaters) in commercial vehicle subsystems with overvoltage protection.

IC Role / Device Role / Timing Role: High-side load switch with integrated body diode for reverse-polarity protection and inductive kick management.

Use Value: Body diode V_SD = -5.8 V at -0.4 A enables low-loss freewheeling; -55 to +150 °C T_J rating supports under-hood deployment.

Use Scenario: Precision programmable output stage in benchtop power supplies requiring adjustable current limiting and soft-start.

IC Role / Device Role / Timing Role: Adjustable series pass element controlled by op-amp feedback loop; operates in linear region for regulation.

Use Value: Low R_DS(on) tolerance (±15% typical) and stable g_fs = 0.27 S ensure predictable current compliance; ease of paralleling allows scaling to higher output currents.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFD120PBF	V_DS = -100 V, R_DS(on) = 0.27 Ω, Q_g = 14 nC - lower voltage rating but lower on-resistance and higher gate charge	Not suitable for >100 V bus applications; better for 12–48 V systems needing higher current density	Select when system V_DD ≤ 80 V and R_DS(on) < 0.3 Ω is prioritized over voltage margin
STP20PF06	V_DS = -60 V, R_DS(on) = 0.18 Ω, TO-220 package - lower voltage, lower R_DS(on), higher power dissipation (60 W), no avalanche rating	Requires heatsink; lacks repetitive avalanche capability; unsuitable for unclamped inductive loads	Choose only for low-voltage, high-current linear or switching applications where thermal mass compensates for lack of ruggedness

Compared with IRFD9210PBF, IRFD120PBF offers lower conduction loss but sacrifices 100 V of blocking margin and adds 5.1 nC gate charge, while STP20PF06 trades voltage rating, avalanche robustness, and compact DIP packaging for raw current-handling capacity - making IRFD9210PBF uniquely suited for space-constrained, high-reliability 200 V-class industrial controls.

Availability

IRFD9210PBF is available at Aetrix Electronics and suitable for industrial relay drivers, high-voltage DC-DC converters, and automotive load switches requiring stable component supply, long-term lifecycle support, and RoHS-compliant through-hole assembly.

Supply support for IRFD9210PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial, automotive, and computing applications.

The IRFD series targets cost-sensitive, high-voltage through-hole power switching applications, emphasizing ruggedness, ease of automated assembly, and thermal performance in compact DIP packages - specifically engineered for industrial control and power management systems.

FAQ

What is the maximum continuous drain current for IRFD9210PBF at 100 °C ambient temperature?

The IRFD9210PBF supports -0.25 A continuous drain current at T_A = 100 °C, derated from -0.40 A at 25 °C using a linear derating factor of 0.0083 W/°C. This reflects its 1.0 W power dissipation limit and 120 °C/W junction-to-ambient thermal resistance. Designers must verify PCB copper area and airflow to maintain safe junction temperatures under sustained load in real-world IRFD9210PBF deployments.

Does IRFD9210PBF require a gate resistor for stable switching?

Yes - a gate resistor is recommended to control dI/dt and suppress ringing, especially given the IRFD9210PBF's 8.9 nC total gate charge and fast 12 ns rise time. Typical values range from 10 Ω to 47 Ω depending on driver strength and layout parasitics. The datasheet specifies R_g = 24 Ω for switching time characterization, confirming that external gate resistance is integral to achieving specified t_r, t_f, and EMI performance in IRFD9210PBF circuits.

Can IRFD9210PBF be used in parallel configurations?

Yes - the IRFD9210PBF is explicitly designed for ease of paralleling, supported by its positive temperature coefficient of R_DS(on) and matched threshold voltage distribution. Parallel operation improves current handling and thermal sharing, provided gate drive impedance and PCB trace lengths are balanced. This capability is validated in Vishay's application guidance for multi-device load switching, and is a documented feature of the IRFD9210PBF product family.

What is the body diode reverse recovery charge (Q_rr) of IRFD9210PBF?

The IRFD9210PBF has a body diode reverse recovery charge of 0.56–1.1 μC, measured at T_J = 25 °C, I_F = -2.3 A, and dI/dt = 100 A/μs. This parameter directly impacts switching loss and voltage overshoot during hard-commutation events. Designers should account for Q_rr in snubber design and efficiency calculations - particularly critical in flyback or synchronous rectifier topologies where the IRFD9210PBF body diode conducts freewheeling current.

Is IRFD9210PBF suitable for logic-level gate drive?

No - the IRFD9210PBF is not a logic-level MOSFET. Its gate-source threshold voltage ranges from -2.0 V to -4.0 V, and it requires -10 V V_GS to achieve rated R_DS(on) = 3.0 Ω. While it may weakly conduct at -5 V, performance degrades significantly (R_DS(on) increases >2×). For reliable saturation, dedicated -10 V gate drivers or level-shifted supplies are required - a key distinction from true logic-level P-channel devices like the FQP47P06.

IRFD9210PBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: 4-DIP (0.300", 7.62mm)

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 400mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3Ohm @ 240mA, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.9 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 170 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 4-HVMDIP

IRFD9210PBF FAQ

1.How can I place an order for IRFD9210PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFD9210PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFD9210PBF reliable?

The price and inventory of IRFD9210PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFD9210PBF is usually 5 days.

3.What payment methods are accepted for IRFD9210PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFD9210PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFD9210PBF?

IRFD9210PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFD9210PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFD9210PBF?

For technical support, including IRFD9210PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFD9210PBF requirements.

6.How does Aetrix verify that IRFD9210PBF is sourced from the original manufacturer or authorized distributors?

All IRFD9210PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFD9210PBF meets industry standards.

7.What is the process for return or replacement of IRFD9210PBF?

All IRFD9210PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFD9210PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFD9210PBF part is unused and in its original packaging.

Return procedure for IRFD9210PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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