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Vishay Siliconix IRFD9220PBF
- Part No.:
- IRFD9220PBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- 4-DIP (0.300", 7.62mm)
- Datasheet:
-
IRFD9220PBF.pdf
- Description:
- MOSFET P-CH 200V 560MA 4DIP
- Quantity:
- Payment:
- Shipping:
Inventory:2,742
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Product details
Overview
IRFD9220PBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in HVMDIP (4-pin DIP) package, rated for -200 V VDS, 1.5 Ω RDS(on) at VGS = -10 V, and 1 W power dissipation. It delivers fast switching, repetitive avalanche capability, and is designed for high-voltage DC-DC converters, relay drivers, and industrial control circuits requiring robust low-cost power switching.
For engineers reviewing the IRFD9220PBF datasheet, IRFD9220PBF pinout, IRFD9220PBF application, or IRFD9220PBF equivalent, this page provides verified electrical parameters, thermal derating behavior, body diode recovery characteristics, and validated alternatives for high-side switching designs operating up to -200 V with ≤1 W ambient power dissipation.
Technical Context
The IRFD9220PBF uses a third-generation silicon process optimized for ruggedized P-channel operation, featuring a thermally enhanced dual-drain DIP package that conducts heat directly to the PCB mounting surface. Its -200 V breakdown voltage and -5 V/ns peak diode recovery dV/dt rating support reliable operation in inductive load switching and unclamped inductive turn-off scenarios.
It exhibits gate threshold voltage of -2 to -4 V, total gate charge of 15 nC, and body diode reverse recovery time of 150–300 ns - enabling predictable timing in synchronous rectifier and H-bridge high-side configurations where controlled turn-off and avalanche energy management are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -200 V - supports high-side switching in 100–200 V DC bus applications without external clamping |
| RDS(on) | 1.5 Ω @ VGS = -10 V - enables ≤0.56 A continuous drain current with <0.5 W conduction loss at TA = 25 °C |
| Qg | 15 nC - determines gate drive power requirement and switching speed in PWM-controlled loads |
| EAS | 80 mJ - allows safe single-pulse inductive energy absorption during unclamped inductive switching |
| TJ Range | -55 to +150 °C - ensures operation across industrial temperature environments without derating below -40 °C |
| RthJA | 120 °C/W - defines thermal limit: 1 W power dissipation raises junction temp by 120 °C above ambient |
| trr / Qrr | 150–300 ns / 0.97–2 μC - impacts commutation losses and EMI in freewheeling paths with inductive loads |
Pinout & Package
The IRFD9220PBF is housed in a 4-pin HVMDIP (High Voltage Mini-DIP) package with dual drain leads for improved thermal conduction to the PCB. Package dimensions: 7.87–8.38 mm length × 7.62–10.79 mm width × 6.86–7.36 mm height, 0.100" (2.54 mm) lead pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Pin 1 & 4) | Drain (dual parallel) | Primary high-voltage terminal; dual pins reduce resistance and improve thermal path to board |
| G (Pin 2) | Gate | Controls channel conduction; requires -10 V for full enhancement; ±20 V absolute max rating |
| S (Pin 3) | Source | Reference node for gate drive; connects to load return or system ground in high-side configuration |
Key Features
| Feature | Design Value |
|---|---|
| Repetitive avalanche rated | Enables reliable operation under transient overloads without failure-supports IAR = -0.56 A and EEAR = 0.10 mJ per pulse |
| Dynamic dV/dt rated | Withstands -5 V/ns peak diode recovery dV/dt-reduces risk of false turn-on in noisy inductive environments |
| End stackable DIP | Allows vertical stacking on PCBs for space-constrained industrial controls without mechanical interference |
| Low-cost machine-insertable | Compatible with standard 0.1" pitch auto-insertion equipment-reduces assembly cost vs. SMT alternatives |
| Thermally enhanced dual drain | Dual D pins serve as thermal links to PCB copper-enables 1 W dissipation with minimal heatsinking |
Applications
| Industrial Relay Drivers | High-Voltage DC-DC Converters |
|---|---|
Use Scenario: Driving electromagnetic relays in programmable logic controllers (PLCs) with 100–200 V DC coil supplies. IC Role / Device Role / Timing Role: High-side P-channel switch controlling relay coil current; operates in linear or saturated mode depending on drive level. Use Value: -200 V VDS rating prevents breakdown during relay coil flyback; repetitive avalanche absorbs stored inductive energy safely. | Use Scenario: High-side synchronous rectification or main switch in isolated flyback or forward converters with >100 V input rails. IC Role / Device Role / Timing Role: Primary power switch in non-isolated buck-derived topologies or auxiliary high-side switch in isolated gate drives. Use Value: 1.5 Ω RDS(on) limits conduction loss at ≤0.56 A; 15 nC Qg enables efficient 100–500 kHz switching with standard gate drivers. |
| Motor Control Braking Circuits | Overvoltage Protection Switches |
Use Scenario: Dynamic braking in small DC motors (e.g., HVAC actuators, valve positioners) using regenerative or dissipative methods. IC Role / Device Role / Timing Role: High-side switch connecting motor terminals to braking resistor or supply rail during deceleration. Use Value: Fast switching (tr = 27 ns, tf = 19 ns) and low Qgd/Qgs ratio ensure precise timing control; body diode handles reverse current during freewheeling. | Use Scenario: Overvoltage crowbar or disconnect switch in battery management systems (BMS) or telecom power supplies with 48–192 V nominal rails. IC Role / Device Role / Timing Role: Fail-safe high-side disconnect activated by protection IC upon overvoltage detection. Use Value: -200 V rating accommodates transient surges beyond nominal rail; 80 mJ EAS withstands short-duration overvoltage events without destruction. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFD120PBF | VDS = -100 V, RDS(on) = 0.27 Ω, Qg = 12 nC - lower voltage, lower RDS(on), faster switching | Not suitable for >100 V bus applications; better for 24–48 V industrial controls with higher current density needs | Select when operating voltage ≤100 V and lower conduction loss is prioritized over voltage margin |
| STP12PF06 | VDS = -60 V, RDS(on) = 0.22 Ω, Qg = 20 nC - lower voltage, lower RDS(on), higher gate charge | Designed for automotive 12 V/24 V systems; lacks avalanche rating and high-voltage dV/dt immunity | Choose only for ≤60 V applications where cost and footprint are primary constraints and avalanche robustness is not required |
Compared with IRFD9220PBF, IRFD120PBF offers lower on-resistance and gate charge but sacrifices 100 V of blocking capability, while STP12PF06 trades voltage rating and ruggedness for cost and current density in low-voltage automotive-grade use cases - making IRFD9220PBF uniquely suited for 100–200 V industrial switching where reliability under inductive stress is mandatory.
Availability
IRFD9220PBF is available at Aetrix Electronics and suitable for industrial relay drivers, high-voltage DC-DC converters, motor braking circuits, and overvoltage protection switches requiring stable component supply and long-term manufacturability.
Supply support for IRFD9220PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and thermal performance.
The IRFD9220PBF belongs to Vishay's HVMDIP-series of high-voltage P-channel MOSFETs engineered for cost-sensitive, thermally constrained industrial control applications requiring automatic insertion and end-stackable packaging.
FAQ
What is the maximum continuous drain current for the IRFD9220PBF at 100 °C ambient temperature?
The IRFD9220PBF supports -0.36 A continuous drain current at TA = 100 °C, derived from its 1 W maximum power dissipation and 120 °C/W junction-to-ambient thermal resistance. This value assumes no additional heatsinking and accounts for linear derating from the 25 °C rating of -0.56 A. The IRFD9220PBF must be operated within this limit to avoid exceeding the 150 °C maximum junction temperature.
Does the IRFD9220PBF have a specified avalanche energy rating, and how is it applied in circuit design?
Yes, the IRFD9220PBF is rated for 80 mJ single-pulse avalanche energy (EAS) and 0.10 mJ repetitive avalanche energy (EEAR). These values apply during unclamped inductive switching events - such as relay coil de-energization or motor winding current interruption - where the device absorbs stored magnetic energy. Designers must ensure pulse width and duty cycle remain within limits defined in Figure 11 and 12 of the IRFD9220PBF datasheet to prevent cumulative thermal stress.
Can the IRFD9220PBF be used in parallel configurations, and what design considerations apply?
Yes, the IRFD9220PBF is explicitly characterized for ease of paralleling due to its positive RDS(on) temperature coefficient and matched threshold voltage distribution. When paralleling multiple IRFD9220PBF units, ensure symmetrical gate drive layout, individual gate resistors (≥10 Ω), and balanced source/drain routing to minimize current imbalance. Thermal coupling between devices should also be considered to maintain uniform junction temperatures.
What is the gate threshold voltage range for the IRFD9220PBF, and how does it affect drive circuit design?
The IRFD9220PBF has a gate-source threshold voltage (VGS(th)) range of -2 V to -4 V at ID = -250 μA. This means full enhancement requires VGS ≤ -10 V, but logic-level compatibility down to -5 V is possible with reduced RDS(on). Drive circuits must deliver sufficient negative voltage swing and current to charge the 15 nC total gate charge quickly; insufficient gate drive results in increased switching losses and potential thermal runaway.
How does the dual-drain configuration of the IRFD9220PBF improve thermal performance compared to single-drain DIP packages?
The dual-drain configuration in the IRFD9220PBF provides two parallel low-inductance paths from the die to the PCB, reducing both thermal resistance and source inductance. This improves heat transfer efficiency - enabling the full 1 W power dissipation rating - and minimizes voltage spikes during high di/dt switching. In practice, the dual D pins act as integrated thermal vias, allowing direct copper pour connection beneath the package for enhanced conduction cooling without external heatsinks.
IRFD9220PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- 4-DIP (0.300", 7.62mm)
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 560mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.5Ohm @ 340mA, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 340 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- 4-HVMDIP
IRFD9220PBF FAQ
1.How can I place an order for IRFD9220PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFD9220PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFD9220PBF reliable?
The price and inventory of IRFD9220PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFD9220PBF is usually 5 days.
3.What payment methods are accepted for IRFD9220PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFD9220PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFD9220PBF?
IRFD9220PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFD9220PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFD9220PBF?
For technical support, including IRFD9220PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFD9220PBF requirements.
6.How does Aetrix verify that IRFD9220PBF is sourced from the original manufacturer or authorized distributors?
All IRFD9220PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFD9220PBF meets industry standards.
7.What is the process for return or replacement of IRFD9220PBF?
All IRFD9220PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFD9220PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFD9220PBF part is unused and in its original packaging.
Return procedure for IRFD9220PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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