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Vishay Siliconix IRFDC20

Part No.:
IRFDC20
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
4-DIP (0.300", 7.62mm)
Datasheet:
AetrixIRFDC20.pdf
Description:
MOSFET N-CH 600V 320MA 4DIP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,619

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Product details

Overview

IRFDC20 from Vishay Siliconix is a 600 V, 0.32 A N-channel power MOSFET in HVMDIP package, featuring 4.4 Ω RDS(on) at VGS = 10 V, 18 nC total gate charge, and repetitive avalanche rating-designed for low-power high-voltage switching in offline AC-DC adapters and auxiliary power supplies.

For engineers reviewing the IRFDC20 datasheet, IRFDC20 pinout, IRFDC20 application, or IRFDC20 equivalent, this page delivers verified electrical parameters, thermal limits, diode recovery behavior, and real-world design implications for flyback snubber circuits, isolated bias rails, and low-current HV switching stages.

Technical Context

The IRFDC20 employs a third-generation planar vertical DMOS structure optimized for ruggedness and fast switching in low-duty-cycle, high-voltage applications. Its 600 V VDS, 0.32 A continuous drain current, and 50 mJ single-pulse avalanche energy support unclamped inductive turn-off in compact offline converters.

Thermal performance is constrained by RthJA = 120 °C/W and 1.0 W maximum power dissipation at TA = 25 °C. The device integrates a body diode with 290–580 ns reverse recovery time and 0.67–1.3 μC Qrr, enabling operation in quasi-resonant and discontinuous conduction mode topologies.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 600 V - supports full-wave rectified 230 VAC input without derating in auxiliary switchers
RDS(on) 4.4 Ω @ VGS = 10 V - sets conduction loss floor of ~0.45 W at 0.32 A, limiting usable current range
Qg 18 nC - determines gate drive power and switching speed in 50–100 kHz flyback controllers
EAS 50 mJ - enables safe single-pulse inductive turn-off up to IAS = 1.3 A with L = 54 mH
TJ Range −55 °C to +150 °C - allows operation in sealed industrial enclosures with passive cooling only
VSD 1.6 V @ IS = 0.32 A - defines forward drop penalty during synchronous rectification or bootstrap charging
dV/dt Rating 3.0 V/ns - ensures immunity to parasitic turn-on in high-dV/dt environments like transformer leakage spikes

Pinout & Package

The IRFDC20 uses the HVMDIP (High Voltage Mini-DIP) 4-pin through-hole package: dual drain leads (D/D), source (S), and gate (G), with D leads serving as thermal paths to PCB copper for 1 W dissipation. Package dimensions: 8.38 × 10.79 × 7.36 mm (L × W × H), 0.100" pin pitch.

Pin/Terminal Circuit Role Design Meaning
D (Pin 1 & 4) Drain (dual parallel) Primary high-side switching node; both pins electrically identical and thermally coupled to PCB ground plane
S (Pin 2) Source Reference node for gate drive and current sensing; connects to primary return path in flyback/forward converters
G (Pin 3) Gate CMOS-compatible control input requiring ≤18 nC charge; sensitive to ESD and layout-induced ringing

Key Features

Feature Design Value
Repetitive avalanche rated Enables reliable operation under transient overloads (e.g., output short-circuit) without SOA derating in low-duty designs
Dynamic dV/dt rating (3.0 V/ns) Prevents false turn-on during transformer leakage spikes in offline SMPS, eliminating need for external gate clamping
End stackable HVMDIP package Allows vertical stacking of multiple units on same PCB footprint for redundancy or current sharing in ultra-low-power aux rails
Low Qgd/Qg ratio (8.9/18 nC) Reduces Miller plateau duration, improving controllability during hard-switching transitions in 60–100 kHz designs
Body diode with 290 ns trr (typ.) Supports self-driven synchronous rectification in low-current outputs where discrete Schottky replacement adds cost

Applications

Offline Auxiliary Power Supply Flyback Snubber Switch

Use Scenario: Provides isolated 12 V/50 mA bias supply for PWM controller ICs in 230 VAC-input industrial power supplies.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch operating in discontinuous conduction mode at 65 kHz.

Use Value: 600 V rating eliminates need for voltage divider or Zener clamp; 1.0 W PD enables direct PCB copper heatsinking without heatsink.

Use Scenario: Absorbs leakage energy in flyback transformer reset path during main switch turn-off.

IC Role / Device Role / Timing Role: Clamping switch triggered by RCD network, conducting <10 μs pulses at 65 kHz.

Use Value: 50 mJ EAS withstands worst-case leakage spikes; 3.0 V/ns dV/dt rating prevents spurious turn-on from transformer coupling.

Isolated Gate Driver Bias Rail Low-Power HV Sensor Interface

Use Scenario: Generates floating 15 V supply for isolated IGBT gate drivers in motor control inverters.

IC Role / Device Role / Timing Role: High-side switch in capacitive dropper or diode-capacitor doubler circuit.

Use Value: Dual drain configuration improves thermal coupling to driver PCB; 0.32 A ID supports >10 mA driver quiescent load.

Use Scenario: Powers high-impedance voltage dividers and isolation amplifiers monitoring 400 V DC bus in EV chargers.

IC Role / Device Role / Timing Role: Always-on linear regulator pass element, dissipating <0.5 W continuously.

Use Value: −55 °C to +150 °C TJ range ensures reliability across automotive ambient extremes; low IDSS (<25 μA) minimizes divider error.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP2N60FL 600 V, 2.0 A, RDS(on) = 3.3 Ω, Qg = 12 nC, TO-220 package Higher current capability but requires heatsink; unsuitable for space-constrained DIP layouts Select when >0.32 A continuous current or lower RDS(on) is required; not pin-compatible
IXTP02N60P 600 V, 0.2 A, RDS(on) = 6.5 Ω, Qg = 8.5 nC, TO-220 package Lower current and higher on-resistance, but faster switching due to lower Qg Select for ultra-low gate drive power in low-duty-cycle sampling circuits; not pin-compatible

Compared with STP2N60FL and IXTP02N60P, the IRFDC20 uniquely combines HVMDIP through-hole mountability, dual-drain thermal path, and 0.32 A/600 V rating-making it irreplaceable in legacy board designs requiring stackable DIP footprints and 1 W natural-convection dissipation.

Availability

IRFDC20 is available at Aetrix Electronics and suitable for offline auxiliary power supplies, flyback snubber circuits, and isolated gate driver bias rails requiring stable component supply and long-term obsolescence management.

Supply support for IRFDC20 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.

The IRFDC20 belongs to Vishay's third-generation high-voltage power MOSFET family, engineered specifically for cost-sensitive, low-power offline converter auxiliary rails and snubber functions where ruggedness and manufacturability outweigh raw efficiency metrics.

FAQ

What is the maximum continuous drain current for the IRFDC20 at 100 °C ambient temperature?

The IRFDC20 supports 0.20 A continuous drain current at TA = 100 °C, per its absolute maximum ratings table. This derating reflects its 120 °C/W junction-to-ambient thermal resistance and 1.0 W maximum power dissipation limit. At elevated ambient temperatures, designers must verify that actual power dissipation-including conduction and switching losses-remains below the derated limit to avoid exceeding 150 °C maximum junction temperature. The IRFDC20 datasheet provides thermal response curves (Fig. 11) to support transient thermal analysis.

Does the IRFDC20 have a built-in body diode, and what are its key recovery characteristics?

Yes, the IRFDC20 integrates a body diode with typical reverse recovery time (trr) of 290 ns and maximum of 580 ns at TJ = 25 °C, IF = 2.0 A, and dI/dt = 100 A/μs. Its reverse recovery charge (Qrr) ranges from 0.67 to 1.3 μC. These values directly impact switching losses and EMI in flyback or resonant converters using the body diode for freewheeling. The IRFDC20's Qrr and trr are specified in the "Drain-Source Body Diode Characteristics" section of its datasheet (Document Number 91142).

Can the IRFDC20 be used in avalanche mode, and what are the limits?

Yes, the IRFDC20 is explicitly rated for repetitive avalanche operation, with IAR = 0.32 A and EAR = 0.10 mJ per pulse. Its single-pulse avalanche energy is 50 mJ (EAS), tested under VDD = 50 V, L = 54 mH, Rg = 25 Ω, and IAS = 1.3 A. Avalanche operation must respect pulse width and duty cycle limits defined in Fig. 11 and Note (a) to avoid exceeding TJ(max). The IRFDC20's ruggedized die design enables this capability without external protection components in properly designed clamping circuits.

What is the gate threshold voltage range for the IRFDC20, and how does it affect drive requirements?

The IRFDC20 has a gate-source threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at VDS = VGS and ID = 250 μA. This ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers while maintaining noise immunity. Its low 18 nC total gate charge and 3.0 nC gate-source charge simplify drive design-requiring only modest current capability (e.g., <100 mA peak) and minimal gate resistor tuning. The IRFDC20's VGS(th) tolerance is confirmed in the "Static" specifications table of its datasheet (Rev. D, p.2).

Is the IRFDC20 RoHS-compliant, and what does the 'PbF' suffix indicate?

Yes, the IRFDC20PbF ordering variant is lead (Pb)-free and RoHS-compliant, as indicated by the 'PbF' suffix per Vishay's ordering information table. It meets JEDEC J-STD-609 Category 1 marking requirements and complies with EU RoHS Directive 2011/65/EU and China RoHS. The 'PbF' designation confirms exemption from lead-based solder compatibility concerns and aligns with Vishay's material categorization standard (see www.vishay.com/doc?99912). All IRFDC20PbF units shipped by Aetrix Electronics carry full compliance documentation.

IRFDC20 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
4-DIP (0.300", 7.62mm)
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
4.4Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
18 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
350 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
4-HVMDIP

IRFDC20 FAQ

1.How can I place an order for IRFDC20 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFDC20 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFDC20 reliable?

The price and inventory of IRFDC20 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFDC20 is usually 5 days.

3.What payment methods are accepted for IRFDC20?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFDC20 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFDC20?

IRFDC20 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFDC20 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFDC20?

For technical support, including IRFDC20 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFDC20 requirements.

6.How does Aetrix verify that IRFDC20 is sourced from the original manufacturer or authorized distributors?

All IRFDC20 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFDC20 meets industry standards.

7.What is the process for return or replacement of IRFDC20?

All IRFDC20 units undergo pre-shipment inspection (PSI). If there is an issue with IRFDC20, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFDC20 part is unused and in its original packaging.

Return procedure for IRFDC20:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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