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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFDC20PBF

Name: IRFDC20PBF
Brand: Vishay Siliconix
SKU: IRFDC20PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFDC20PBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 4-DIP (0.300", 7.62mm)

Datasheet:: IRFDC20PBF.pdf

Description:: MOSFET N-CH 600V 320MA 4DIP

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Product details

Overview

IRFDC20PBF from Vishay Siliconix is a 600 V, 0.32 A N-channel power MOSFET in HVMDIP package, featuring 4.4 Ω R_DS(on) at V_GS = 10 V, 18 nC total gate charge, and repetitive avalanche rating-designed for low-power high-voltage switching in offline AC-DC auxiliary supplies and LED driver bias circuits.

For engineers reviewing the IRFDC20PBF datasheet, IRFDC20PBF pinout, IRFDC20PBF application, or IRFDC20PBF equivalent, key selection criteria include its 600 V blocking capability, 1 W ambient-rated power dissipation, dual-drain thermal path, and fast 10 ns turn-on delay-critical for compact flyback snubberless designs and isolated gate-drive biasing.

Technical Context

This third-generation high-voltage MOSFET uses planar silicon technology with optimized charge distribution to achieve robust dV/dt immunity (3.0 V/ns) and unclamped inductive switching survivability up to 50 mJ. Its 4-pin HVMDIP package integrates dual drain leads as a shared thermal path to the PCB, enabling 1 W continuous dissipation without heatsinking.

The device operates with simple gate drive (±20 V max), exhibits low Q_gd/Q_g ratio (8.9/18 nC), and supports parallel operation due to positive temperature coefficient of R_DS(on). Body diode recovery time (290–580 ns) and Q_rr (0.67–1.3 μC) are characterized for hard-switched inductive turn-off.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports direct rectified AC line input in sub-watt auxiliary rails
R_DS(on)	4.4 Ω @ V_GS = 10 V - enables <1 W conduction loss at 0.32 A DC current
Q_g	18 nC - determines gate drive energy and switching loss in 20–100 kHz flyback controllers
E_AS	50 mJ - allows safe unclamped inductive switching during startup or fault conditions
T_J Range	−55 °C to +150 °C - ensures reliability across industrial and lighting ambient environments
R_thJA	120 °C/W - defines thermal rise under natural convection in open-frame designs
I_D (T_A = 100 °C)	0.20 A - sets maximum continuous current derating for enclosed enclosures

Pinout & Package

The IRFDC20PBF is housed in a 4-pin HVMDIP (High Voltage Mini Dual In-line Package) with 0.1" lead pitch, dual drain configuration (D1/D2), and molded plastic body measuring 7.87–8.38 mm × 7.62–10.79 mm × 6.86–7.36 mm. Dual drains serve as primary thermal interface to PCB copper pour.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (D1)	Drain	Primary high-side switch node; electrically tied to Pin 4 (D2) internally; used for thermal anchoring
Pin 2 (G)	Gate	Control terminal requiring ≤10 V logic-level drive; ±20 V absolute max rating
Pin 3 (S)	Source	Reference node for gate drive and load return; connects to internal body diode cathode
Pin 4 (D2)	Drain	Second drain terminal, identical to Pin 1; enables dual-point PCB thermal attachment

Key Features

Feature	Design Value
Repetitive avalanche rated	Supports 0.32 A I_AR and 0.10 mJ E_AR under continuous inductive stress-eliminates need for external clamping in low-energy snubberless topologies
Dynamic dV/dt rating	3.0 V/ns - prevents false turn-on during high-slew-rate voltage transients in offline converters
End stackable HVMDIP	Enables vertical stacking of multiple units on 0.1" grid for space-constrained auxiliary supply modules
Low Q_gd/Q_g ratio	49% (8.9/18 nC) - improves Miller immunity and reduces switching instability in high-gain gate drivers
Body diode softness	trr = 290–580 ns, Q_rr = 0.67–1.3 μC - minimizes voltage overshoot and EMI during diode commutation in discontinuous mode

Applications

AC-DC Auxiliary Power Supply	Isolated Gate Driver Bias
Use Scenario: Provides regulated 12–24 V bias for primary-side PWM controllers in offline flyback converters with no auxiliary winding. IC Role / Device Role / Timing Role: High-side switch in self-oscillating or resistor-capacitor timed start-up circuit; conducts only during initial charging phase. Use Value: 600 V V_DS withstands full rectified line; dual drain lowers thermal resistance to enable 1 W operation without heatsink.	Use Scenario: Generates isolated floating supply for high-side gate drivers in half-bridge motor control ICs. IC Role / Device Role / Timing Role: Low-duty-cycle switch in capacitive-coupled charge-pump topology; operates at fixed frequency below 100 kHz. Use Value: Repetitive avalanche rating absorbs energy from transformer leakage inductance; 4.4 Ω R_DS(on) limits conduction loss during brief on-time.
LED Driver Standby Circuit	Industrial Sensor Bias Rail
Use Scenario: Powers microcontroller and communication interface in smart LED drivers during dimmed or off states. IC Role / Device Role / Timing Role: Primary switch in low-frequency (1–10 Hz) burst-mode auxiliary converter; duty cycle <1%. Use Value: 0.32 A continuous rating sustains 5–10 mA load with margin; 150 °C max T_J supports sealed luminaire environments.	Use Scenario: Supplies stable 5 V or 3.3 V to analog front-end sensors in programmable logic controllers. IC Role / Device Role / Timing Role: Linear-regulator bypass switch in low-noise LDO pre-regulator stage; handles transient surges. Use Value: Fast 10 ns t_d(on) and 23 ns t_r enable precise timing control; low IDSS (<25 μA) prevents standby current leakage.

AC-DC Auxiliary Power Supply

Isolated Gate Driver Bias

Use Scenario: Provides regulated 12–24 V bias for primary-side PWM controllers in offline flyback converters with no auxiliary winding.

IC Role / Device Role / Timing Role: High-side switch in self-oscillating or resistor-capacitor timed start-up circuit; conducts only during initial charging phase.

Use Value: 600 V V_DS withstands full rectified line; dual drain lowers thermal resistance to enable 1 W operation without heatsink.

Use Scenario: Generates isolated floating supply for high-side gate drivers in half-bridge motor control ICs.

IC Role / Device Role / Timing Role: Low-duty-cycle switch in capacitive-coupled charge-pump topology; operates at fixed frequency below 100 kHz.

Use Value: Repetitive avalanche rating absorbs energy from transformer leakage inductance; 4.4 Ω R_DS(on) limits conduction loss during brief on-time.

LED Driver Standby Circuit

Industrial Sensor Bias Rail

Use Scenario: Powers microcontroller and communication interface in smart LED drivers during dimmed or off states.

IC Role / Device Role / Timing Role: Primary switch in low-frequency (1–10 Hz) burst-mode auxiliary converter; duty cycle <1%.

Use Value: 0.32 A continuous rating sustains 5–10 mA load with margin; 150 °C max T_J supports sealed luminaire environments.

Use Scenario: Supplies stable 5 V or 3.3 V to analog front-end sensors in programmable logic controllers.

IC Role / Device Role / Timing Role: Linear-regulator bypass switch in low-noise LDO pre-regulator stage; handles transient surges.

Use Value: Fast 10 ns t_d(on) and 23 ns t_r enable precise timing control; low IDSS (<25 μA) prevents standby current leakage.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage low-current MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP1NK60ZFP	600 V, 0.25 A, R_DS(on) = 7.5 Ω, TO-92 package, no avalanche rating	Lacks repetitive avalanche capability; higher R_DS(on) increases conduction loss by ~70%	Acceptable only in non-avalanche-stressed, low-temperature environments with ample thermal margin
FQP1N60CTF	600 V, 0.3 A, R_DS(on) = 5.5 Ω, TO-220FP package, 25 mJ E_AS	Higher R_DS(on) and larger footprint; lower E_AS than IRFDC20PBF's 50 mJ	Better for higher-current needs but requires PCB area and thermal design changes; not drop-in

Compared with STP1NK60ZFP and FQP1N60CTF, the IRFDC20PBF delivers superior avalanche ruggedness, lower on-resistance in a compact surface-mountable HVMDIP, and dual-drain thermal management-making it uniquely suited for space- and reliability-constrained auxiliary power stages where layout density and fault tolerance are critical.

Availability

IRFDC20PBF is available at Aetrix Electronics and suitable for AC-DC auxiliary power supplies, isolated gate driver bias circuits, and LED driver standby rails requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial and lighting OEMs.

Supply support for IRFDC20PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The IRFDC20PBF belongs to Vishay's third-generation high-voltage MOSFET family, engineered specifically for low-power, high-voltage auxiliary switching in energy-efficient offline power conversion systems.

FAQ

What is the maximum continuous drain current for IRFDC20PBF at 100 °C ambient temperature?

The IRFDC20PBF supports 0.20 A continuous drain current at T_A = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the HVMDIP package with R_thJA = 120 °C/W. At 25 °C ambient, the rating rises to 0.32 A. Designers must verify board layout and copper area to maintain junction temperature below 150 °C under actual operating conditions. The IRFDC20PBF datasheet provides thermal response curves for transient pulse handling.

Does IRFDC20PBF have a built-in body diode, and what are its key parameters?

Yes, the IRFDC20PBF integrates a parasitic body diode inherent to its N-channel MOSFET structure. Key parameters include V_SD = 1.6 V at I_S = 0.32 A and T_J = 25 °C, reverse recovery time t_rr = 290–580 ns, and Q_rr = 0.67–1.3 μC at I_F = 2.0 A and dI/dt = 100 A/μs. These values are measured per JEDEC standards and directly impact EMI and voltage overshoot in hard-switched topologies. The IRFDC20PBF body diode is not intended for continuous conduction but supports freewheeling during switching transitions.

Can IRFDC20PBF be used in parallel configurations, and what design considerations apply?

Yes, the IRFDC20PBF is designed for ease of paralleling, supported by its positive temperature coefficient of R_DS(on), which promotes current sharing. Critical considerations include matched gate drive impedance (≤18 Ω recommended), symmetrical PCB layout with equal trace lengths, and individual gate resistors to damp oscillation. The IRFDC20PBF's low Q_gd/Q_g ratio further enhances stability. Parallel use increases effective current capacity but does not linearly scale power dissipation-thermal coupling between devices must be modeled separately.

What is the peak diode recovery dV/dt rating for IRFDC20PBF, and how is it tested?

The IRFDC20PBF has a peak diode recovery dV/dt rating of 3.0 V/ns, verified per JEDEC test method JESD24-11 using the circuit in Figure 14 of its datasheet. Testing applies controlled dI/dt to the body diode while monitoring V_DS rise; failure occurs if parasitic turn-on exceeds threshold. This rating ensures reliable operation in high-slew-rate environments like flyback snubberless designs. The IRFDC20PBF's dynamic dV/dt immunity is intrinsic to its die design-not dependent on external components.

Is IRFDC20PBF RoHS-compliant and halogen-free?

Yes, IRFDC20PBF is lead (Pb)-free and RoHS-compliant per EU Directive 2011/65/EU, as confirmed by its "PbF" suffix and Vishay's material declaration document #99912. It meets Vishay's definition of halogen-free (≤900 ppm bromine, ≤900 ppm chlorine, total ≤1500 ppm halogens), verified through standardized IEC 62321 testing. Full compliance documentation, including substance declarations and test reports, is accessible via Vishay's website using document number 91142. The IRFDC20PBF packaging and marking conform to IPC-7351B standards.

IRFDC20PBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: 4-DIP (0.300", 7.62mm)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 320mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.4Ohm @ 190mA, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 350 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 4-HVMDIP

IRFDC20PBF FAQ

1.How can I place an order for IRFDC20PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFDC20PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFDC20PBF reliable?

The price and inventory of IRFDC20PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFDC20PBF is usually 5 days.

3.What payment methods are accepted for IRFDC20PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFDC20PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFDC20PBF?

IRFDC20PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFDC20PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFDC20PBF?

For technical support, including IRFDC20PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFDC20PBF requirements.

6.How does Aetrix verify that IRFDC20PBF is sourced from the original manufacturer or authorized distributors?

All IRFDC20PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFDC20PBF meets industry standards.

7.What is the process for return or replacement of IRFDC20PBF?

All IRFDC20PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFDC20PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFDC20PBF part is unused and in its original packaging.

Return procedure for IRFDC20PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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