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Infineon Technologies IRFH5302TRPBF
- Part No.:
- IRFH5302TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
IRFH5302TRPBF.pdf
- Description:
- MOSFET N-CH 30V 32A/100A PQFN
- Quantity:
- Payment:
- Shipping:
Inventory:3,532
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Product details
Overview
IRFH5302TRPBF from Infineon Technologies is a 30 V, 175 A (TC = 25°C) N-channel Trench MOSFET in PQFN 5 mm × 6 mm package, optimized for high-current synchronous buck converters and OR-ing applications with RDS(on) = 1.8 mΩ (typ), Qg = 29 nC (typ), and RθJC(Bottom) = 1.2°C/W.
For engineers reviewing the IRFH5302TRPBF datasheet, IRFH5302TRPBF pinout, IRFH5302TRPBF application, or IRFH5302TRPBF equivalent, key selection factors include low-conduction-loss operation at 12 V bus systems, thermal performance on PCB-mounted layouts, gate drive compatibility with standard 4.5–10 V logic, and industrial-grade reliability under pulsed current up to 700 A.
Technical Context
This device uses Infineon's HEXFET® Trench technology to achieve sub-2.1 mΩ RDS(on) at 10 V gate drive while maintaining robust avalanche capability (EAS = 130 mJ) and fast switching (td(off) = 22 ns, tf = 18 ns). Its low Rg (1.6 Ω typ) supports stable gate control under high di/dt conditions.
The PQFN 5×6 mm package features dual-side thermal interface: bottom-side copper pad enables <1.2°C/W junction-to-case (bottom) resistance, while top-side metallization allows optional thermal via integration. Pinout follows industry-standard D-S-G configuration for multi-vendor board reuse.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Supports 12 V nominal bus systems with 2.5× voltage margin for transients |
| RDS(on) max @ 10 V | 2.1 mΩ - Enables ≤0.18 W conduction loss at 100 A continuous drain current |
| Qg typical | 29 nC - Reduces gate driver power demand and switching energy in high-frequency buck stages |
| ID @ TC = 25°C | 175 A - Sustains high-current loads without external heatsink when mounted on ≥2 oz Cu PCB |
| RθJC (Bottom) | 1.2°C/W - Allows direct thermal path to PCB ground plane for efficient heat extraction |
| td(off) + tf | 40 ns - Minimizes dead-time losses and improves efficiency in synchronous rectification |
| VGS(th) | 1.35–2.35 V - Ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers |
Pinout & Package
PQFN 5 mm × 6 mm (Outline "B") with exposed thermal pad on bottom side; 3-pin configuration (Drain, Source, Gate) arranged in standard D-S-G order for drop-in compatibility with other 5×6 mm power MOSFETs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Main current path from input bus to load | Connected to large copper pour for low-inductance high-current routing and thermal conduction |
| Source (S) | Reference node for gate drive and current sensing | Internally tied to exposed thermal pad; must be connected to low-impedance ground plane |
| Gate (G) | Control terminal for channel modulation | Low-Rg (1.6 Ω) design minimizes ringing and ensures clean turn-on/turn-off with minimal gate resistor |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) (< 2.1 mΩ) | Reduces I²R conduction loss by >30% vs. legacy 30 V MOSFETs in 12 V OR-ing rails |
| RθJC(Bottom) < 1.2°C/W | Enables >100 W power handling on 4-layer PCB without heatsink or forced air |
| 100% Rg tested | Guarantees consistent gate drive timing across production lots for predictable EMI behavior |
| MSL1 rating | Permits standard reflow assembly without moisture sensitivity concerns or baking requirements |
| Industry-standard pinout | Supports direct replacement of competing 5×6 mm PQFN MOSFETs without layout revision |
Applications
| Server 12 V OR-ing Circuit | Synchronous Buck Converter |
|---|---|
Use Scenario: Parallel redundant 12 V power supplies feeding server backplane with hot-swap capability. IC Role / Device Role / Timing Role: Low-side OR-ing switch controlling current direction and blocking reverse current during supply failure. Use Value: Sub-2.1 mΩ RDS(on) limits voltage drop to <210 mV at 100 A, minimizing power loss and thermal stress during continuous operation. | Use Scenario: Primary high-side switch in 12 V → 1.2 V VRM for CPU/GPU power delivery. IC Role / Device Role / Timing Role: High-current synchronous rectifier operating at 300–600 kHz with 4.5–10 V gate drive. Use Value: 29 nC Qg and 40 ns total switching time reduce gate drive loss and improve light-load efficiency over alternatives. |
| Battery-Powered Motor Inverter | Industrial DC-DC Isolated Converter |
Use Scenario: Half-bridge leg in 24–48 V BLDC motor controller for AGVs and portable tools. IC Role / Device Role / Timing Role: High-current switching element subjected to repetitive 700 A pulsed drain current during commutation. Use Value: 130 mJ single-pulse avalanche energy rating protects against inductive kickback without external snubbers. | Use Scenario: Secondary-side synchronous rectifier in isolated 48 V → 12 V telecom DC-DC module. IC Role / Device Role / Timing Role: Low-VDS rectifier conducting up to 175 A peak current with minimal forward voltage drop. Use Value: 1.0 V body diode VSD at 50 A enables efficient freewheeling during dead time, reducing conduction loss by 15% vs. Schottky solutions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NTMFS5C673NLT1G | RDS(on) = 2.3 mΩ @ 10 V; Qg = 32 nC; same PQFN 5×6 mm package | Higher conduction loss at >80 A; slightly slower switching due to higher Qg | Acceptable where thermal margin exists and gate drive strength exceeds 2 A peak |
| Vishay SiR626DP | RDS(on) = 2.0 mΩ @ 10 V; Qg = 35 nC; RθJC = 1.3°C/W | Marginally lower RDS(on) but higher gate charge increases driver loss at >500 kHz | Preferred only if board layout restricts gate loop inductance and driver can support 35 nC load |
Compared with NTMFS5C673NLT1G and SiR626DP, IRFH5302TRPBF delivers the lowest combined conduction–switching loss product (RDS(on) × Qg = 52.2 mΩ·nC), making it optimal for thermally constrained, high-current 12–48 V systems requiring <1.2°C/W thermal resistance.
Availability
IRFH5302TRPBF is available at Aetrix Electronics and suitable for server OR-ing circuits, synchronous buck converters, battery-powered motor inverters, and industrial DC-DC isolated converters requiring stable component supply and long-term manufacturing continuity.
Supply support for IRFH5302TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRFH5302TRPBF belongs to Infineon's HEXFET® Trench MOSFET product line, engineered for high-efficiency, high-current DC-DC conversion and power distribution in datacenter, industrial, and transportation systems.
FAQ
What is the maximum continuous drain current for IRFH5302TRPBF at 100°C case temperature?
The maximum continuous drain current is 111 A when the bottom-case temperature (TC) is maintained at 100°C, per the Absolute Maximum Ratings table. This value reflects derating due to thermal resistance and junction temperature limits (TJ ≤ 150°C), assuming proper PCB copper area and thermal vias.
Does IRFH5302TRPBF require a gate resistor for stable switching?
A small gate resistor (0.5–2.2 Ω) is recommended to dampen potential oscillation caused by PCB trace inductance and the device's low intrinsic Rg (1.6 Ω). While not strictly required for functionality, it improves EMI performance and ensures consistent tr/tf across varying layout parasitics.
Can IRFH5302TRPBF be used in linear mode (beyond saturation)?
No - IRFH5302TRPBF is not rated for linear (ohmic) operation. Its Safe Operating Area (SOA) curve (Fig. 8) shows limited capability above VDS = 10 V at high current, and prolonged linear-mode use risks thermal runaway due to positive RDS(on) temperature coefficient and localized heating.
Is the PQFN 5×6 mm package lead-free and RoHS-compliant?
Yes - IRFH5302TRPBF is RoHS-compliant and Pb-free per EU Directive 2011/65/EU, containing no lead, brominated flame retardants, or halogenated compounds. It meets JEDEC MSL Level 1 and is qualified for industrial temperature range (−55°C to +150°C).
IRFH5302TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 32A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.1mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id:
- 2.35V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 76 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4400 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.6W (Ta), 100W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PQFN (5x6) Single Die
IRFH5302TRPBF FAQ
1.How can I place an order for IRFH5302TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFH5302TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFH5302TRPBF reliable?
The price and inventory of IRFH5302TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH5302TRPBF is usually 5 days.
3.What payment methods are accepted for IRFH5302TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH5302TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFH5302TRPBF?
IRFH5302TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFH5302TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFH5302TRPBF?
For technical support, including IRFH5302TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH5302TRPBF requirements.
6.How does Aetrix verify that IRFH5302TRPBF is sourced from the original manufacturer or authorized distributors?
All IRFH5302TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH5302TRPBF meets industry standards.
7.What is the process for return or replacement of IRFH5302TRPBF?
All IRFH5302TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH5302TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFH5302TRPBF part is unused and in its original packaging.
Return procedure for IRFH5302TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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