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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH7545TRPBF

Name: IRFH7545TRPBF
Brand: Infineon Technologies
SKU: IRFH7545TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH7545TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IRFH7545TRPBF.pdf

Description:: MOSFET N-CH 60V 85A PQFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFH7545TRPBF from Infineon Technologies is a 60 V, 85 A N-channel Trench MOSFET in PQFN 5×6 mm package, featuring 4.3 mΩ typ. R_DS(on) at V_GS = 10 V, 102 mJ single-pulse avalanche energy, and enhanced body diode dV/dt capability. It serves as a high-current synchronous rectifier or half-bridge switch in BLDC motor drives and DC/DC converters.

For engineers reviewing the IRFH7545TRPBF datasheet, IRFH7545TRPBF pinout, IRFH7545TRPBF application, or IRFH7545TRPBF equivalent, key selection criteria include R_DS(on) at 10 V, thermal resistance R_θJC (bottom) of 1.5 °C/W, avalanche ruggedness, body diode recovery performance (Q_rr = 30 nC), and PQFN 5×6 mm footprint compatibility with high-density power layouts.

Technical Context

This MOSFET employs Infineon's Trench-based HEXFET architecture optimized for low conduction loss and fast switching in hard-switched and resonant topologies. Its gate charge profile (Q_g = 73 nC typ.) and low C_iss (3890 pF) support efficient 100–500 kHz operation in DC/DC converters and motor inverters.

The device integrates a robust intrinsic body diode with t_rr = 32 ns (T_J = 25°C), I_RRM = 1.7 A, and dv/dt rating of 8.1 V/ns at 150°C-enabling reliable commutation in OR-ing and synchronous rectification without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage compatible with 48 V nominal bus systems and 60 V automotive/industrial rails.
R_DS(on) typ.	4.3 mΩ at V_GS = 10 V, I_D = 51 A - Enables ≤2.2 W conduction loss at 50 A continuous, reducing heatsink requirements.
I_D cont.	85 A at T_C = 25°C - Supports high-current half-bridge legs in 500 W–1 kW motor drives and power supplies.
E_AS	102 mJ single-pulse - Withstands unclamped inductive switching events up to 51 A without failure under validated test conditions (L = 78 µH).
R_θJC (bottom)	1.5 °C/W - Enables direct thermal interface to PCB copper or heatsink, supporting >70 W dissipation with <105°C junction rise above case.
Q_g	73 nC typ. - Matches standard gate drivers (e.g., IR2110, UCC27531) without requiring oversized drive strength or excessive Miller immunity design margin.
t_rr	32 ns at T_J = 25°C - Limits reverse recovery loss during hard commutation, critical for efficiency in synchronous buck and full-bridge ZVS designs.

Pinout & Package

PQFN 5 mm × 6 mm package with exposed drain pad on bottom side for optimal thermal conduction and low-inductance source connections. Pin 1 (Gate) located at top-left corner when marking side faces up; pins numbered counter-clockwise.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts 0–10 V logic-level drive; 2.5 Ω typical gate resistance minimizes ringing in high-dI/dt switching.
2–5, 7–10 (S)	Source	Power return path; multiple parallel terminals reduce source inductance (<0.5 nH typical) for stable high-frequency operation.
6, 11–12 (D)	Drain	Main current path; connected to large internal copper clip and bottom-exposed pad for <1.5 °C/W thermal path to PCB/heatsink.

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	8.1 V/ns at T_J = 150°C - Prevents false turn-on during high-speed commutation in bridge configurations.
Fully characterized avalanche SOA	102 mJ single-pulse, 160 mJ thermally limited - Allows safe operation in unclamped inductive switching without external snubbers.
Low Q_gd/Q_g ratio	22 nC / 73 nC ≈ 0.30 - Improves Miller immunity and enables stable 500 kHz+ switching with moderate gate drive.
RoHS-compliant lead-free construction	Pb-free matte tin plating on terminals - Meets IPC-J-STD-020 moisture sensitivity level 2a (MSL 2a, 260°C peak reflow).
Optimized C_oss energy profile	C_{oss eff}(ER) = 370 pF - Reduces capacitive switching loss in resonant LLC and phase-shifted full-bridge topologies.

Applications

Brushed Motor Drive

BLDC Motor Inverter

Use Scenario: H-bridge driver for 24–48 V cordless power tools with peak currents up to 80 A.

IC Role / Device Role / Timing Role: Low-side and high-side switching element; operates in PWM mode at 10–20 kHz with dead-time control.

Use Value: 4.3 mΩ R_DS(on) reduces I²R loss by >30% vs. legacy 6.5 mΩ devices, extending battery runtime per charge cycle.

Use Scenario: 3-phase inverter stage in 400 W e-bike controller with field-oriented control (FOC).

IC Role / Device Role / Timing Role: Power switch in each leg; handles 51 A RMS phase current with 32 ns body diode recovery enabling clean zero-crossing commutation.

Use Value: Low Q_rr (30 nC) and high dv/dt immunity minimize shoot-through risk and EMI during high-dI/dt transitions.

Synchronous Rectifier

OR-ing Power Switch

Use Scenario: Secondary-side switch in 60 V input, 12 V output isolated DC/DC converter operating at 300 kHz.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; driven by transformer-coupled or active gate control.

Use Value: 1.2 V V_SD forward drop at 51 A cuts conduction loss by ~65% versus 40 V/5 A Schottky, improving efficiency from 92% to 95.3%.

Use Scenario: Redundant 48 V power supply backplane with hot-swap and fault isolation.

IC Role / Device Role / Timing Role: OR-ing FET controlling power path from primary and backup supplies; operated in linear mode during startup and fault transition.

Use Value: 1.5 °C/W R_θJC and 85 A rating enable bidirectional current handling with <15 mV forward drop at 40 A, minimizing insertion loss and thermal stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTP86N10T	100 V V_DSS, 86 A, R_DS(on) = 10.5 mΩ (10 V), TO-220 package, R_θJA = 40 °C/W	Higher voltage rating but double R_DS(on); unsuitable for space-constrained 48 V systems requiring low thermal resistance.	Select only if 100 V blocking is mandatory and board area/thermal budget permits TO-220 mounting.
STL220N6F7	60 V V_DSS, 220 A, R_DS(on) = 2.2 mΩ (10 V), PowerFLAT 5×6 mm, Q_g = 115 nC	Lower R_DS(on) but higher gate charge increases drive loss; no published avalanche energy spec.	Prefer for ultra-low-loss 100 A+ designs where gate drive capability exists and avalanche robustness is secondary.

Compared with IXTP86N10T and STL220N6F7, IRFH7545TRPBF delivers optimal balance of low R_DS(on), proven avalanche ruggedness, and compact PQFN thermal performance-making it preferred for 48 V motor drives and high-reliability OR-ing where both efficiency and fault tolerance are critical.

Availability

IRFH7545TRPBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectifiers requiring stable component supply across industrial automation, e-mobility, and telecom power systems.

Supply support for IRFH7545TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's StrongIRFET™ family-designed specifically for high-current, high-ruggedness power conversion in motor control, server PSU, and renewable energy systems where reliability under transient stress is non-negotiable.

FAQ

What is the maximum continuous drain current for IRFH7545TRPBF at 100°C case temperature?

The maximum continuous drain current is 54 A at T_C = 100°C and V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PQFN 5×6 mm package and ensures junction temperature remains below 150°C under steady-state conduction.

Does IRFH7545TRPBF support logic-level gate drive?

No-it requires ≥4.5 V V_GS for meaningful conduction and achieves rated R_DS(on) only at 10 V. Gate threshold voltage ranges from 2.1 V to 3.7 V, but full enhancement occurs above 5.5 V; use of 3.3 V logic drivers is not recommended without gate boosting.

How is the PQFN 5×6 mm package thermally mounted in production?

The device uses bottom-side thermal pad soldering to ≥200 mm² of 2-oz copper on inner or outer PCB layers. Recommended stencil aperture is 80–90% open area; reflow profile must achieve peak temperature ≥245°C for void-free solder joint formation to ensure R_θJC ≤1.5 °C/W.

Can IRFH7545TRPBF replace IRF7470PbF in existing designs?

No-IRF7470PbF is a 100 V, 14 A SO-8 device with 12 mΩ R_DS(on). IRFH7545TRPBF has different voltage rating, current capacity, package, and pinout. Direct replacement would require layout revision, gate drive adjustment, and thermal redesign due to 6× higher current density and 5× lower R_DS(on).

IRFH7545TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 85A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 5.2mOhm @ 51A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3890 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 83W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PQFN (5x6)

IRFH7545TRPBF FAQ

1.How can I place an order for IRFH7545TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH7545TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH7545TRPBF reliable?

The price and inventory of IRFH7545TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH7545TRPBF is usually 5 days.

3.What payment methods are accepted for IRFH7545TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH7545TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH7545TRPBF?

IRFH7545TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH7545TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH7545TRPBF?

For technical support, including IRFH7545TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH7545TRPBF requirements.

6.How does Aetrix verify that IRFH7545TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFH7545TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH7545TRPBF meets industry standards.

7.What is the process for return or replacement of IRFH7545TRPBF?

All IRFH7545TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH7545TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH7545TRPBF part is unused and in its original packaging.

Return procedure for IRFH7545TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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