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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH8316TRPBF

Name: IRFH8316TRPBF
Brand: Infineon Technologies
SKU: IRFH8316TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH8316TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IRFH8316TRPBF.pdf

Description:: MOSFET N-CH 30V 27A/50A 8PQFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFH8316TRPBF from Infineon Technologies is a 30 V, 50 A PQFN-packaged N-channel power MOSFET optimized for high-efficiency synchronous buck converters in server VRMs and POL DC-DC modules. It features 2.40 mΩ R_DS(on) at V_GS = 10 V, 30.0 nC total gate charge, and 1.7 °C/W junction-to-case thermal resistance via bottom-side cooling.

For engineers reviewing the IRFH8316TRPBF datasheet, IRFH8316TRPBF pinout, IRFH8316TRPBF application, or IRFH8316TRPBF equivalent, key selection criteria include low R_DS(on) at 4.5 V drive, fast switching with Q_gd = 9.7 nC, body diode t_rr = 14–21 ns, and MSL1 reliability for high-volume SMT assembly.

Technical Context

This device employs trench-gate silicon technology with optimized cell pitch and deep-trench isolation to achieve low on-resistance while maintaining robust avalanche capability (E_AS = 160 mJ). Its gate threshold voltage (V_GS(th) = 1.2–2.2 V) enables reliable turn-on with 4.5 V logic-level drive in high-density point-of-load designs.

The PQFN 5 mm × 6 mm package integrates exposed copper die paddle for direct PCB thermal conduction, enabling <1.7 °C/W R_θJC(bottom). The integrated body diode exhibits low V_SD = 1.0 V and controlled Q_rr = 18–27 nC, supporting efficient synchronous rectification and ZVS transitions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Supports 12 V input bus architectures with margin for transient spikes
R_DS(on) max @ 10 V	2.95 mΩ - Enables ≤1.5 W conduction loss at 50 A in compact VRM phases
R_DS(on) max @ 4.5 V	4.30 mΩ - Ensures stable operation with 5 V gate drivers in cost-sensitive systems
Q_g typ	30.0 nC - Reduces gate drive power and enables >1 MHz switching with moderate driver strength
t_r/t_f	67 ns / 24 ns - Supports fast edge rates for reduced switching losses in high-frequency POLs
t_rr	14–21 ns - Limits reverse recovery energy and EMI in synchronous rectifier mode
R_θJC(bottom)	1.7 °C/W - Allows direct thermal path to inner PCB copper layers without heatsink

Pinout & Package

PQFN 5 mm × 6 mm, 8-pin, bottom-exposed thermal pad (pin 1 marked by quadrant Q1 per tape orientation). Package supports dual-side reflow and meets IPC-J-STD-020 MSL1 requirements.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7	Drain (internally connected)	All drain pins tied to exposed copper paddle - must be soldered to large PCB thermal plane
8	Source	Main source connection - routed to power ground plane with minimal inductance
Gate	Control terminal	Single gate pad (pin not numbered separately); requires low-inductance gate loop layout

Key Features

Feature	Design Value
Low R_DS(on) at 4.5 V	4.30 mΩ - Enables full-rated current with standard 5 V gate drivers, eliminating level-shifters
Ultra-low R_θJC(bottom)	1.7 °C/W - Delivers >90% of rated current in 1-layer thermal pad layouts without thermal vias
Fast body diode recovery	t_rr = 14–21 ns, Q_rr = 18–27 nC - Reduces shoot-through risk and improves light-load efficiency in sync-buck topologies
MSL1 qualification	Unlimited floor life at ≤30 °C/60% RH - Eliminates bake requirements before SMT assembly

Applications

Server Voltage Regulator Modules

AI Accelerator Power Delivery

Use Scenario: High-current, multi-phase 3.3 V/1.8 V/0.8 V VRMs powering CPUs and GPUs in rack-scale servers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300–600 kHz with tight duty-cycle control.

Use Value: 2.40 mΩ R_DS(on) reduces phase loss by ≥18% vs. legacy 3.8 mΩ devices, lowering thermal density in constrained 1U chassis.

Use Scenario: Point-of-load converters supplying 0.75–1.2 V at up to 120 A per rail to AI inference accelerators.

IC Role / Device Role / Timing Role: Low-V_DS primary switch in interleaved buck stages requiring sub-3 mΩ on-resistance and fast switching.

Use Value: 30.0 nC Q_g and 67 ns t_r enable stable 1 MHz operation with minimal gate drive loss, improving transient response under dynamic load steps.

Industrial Motor Drive Gate Drivers

Telecom Base Station DC-DC Converters

Use Scenario: Half-bridge gate driver output stage driving IGBTs or SiC MOSFETs in servo inverters.

IC Role / Device Role / Timing Role: Low-side switch in bootstrap-fed gate driver IC output stage, handling 50 A peak pulsed current.

Use Value: 490 A pulsed drain rating and 160 mJ single-pulse avalanche energy ensure robustness against Miller-induced shoot-through events.

Use Scenario: Intermediate bus converters (48 V → 12 V) in 5G macro base stations with strict EMI and thermal constraints.

IC Role / Device Role / Timing Role: Primary switch in hard-switched forward or active-clamp forward topology operating at 200–300 kHz.

Use Value: 1.0 V body diode forward drop and 21 ns t_rr minimize conduction loss and recovery ringing during dead-time intervals.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFH5004TRPBF	R_DS(on) = 3.8 mΩ @ 10 V; Q_g = 22 nC; same PQFN 5×6 package	Higher conduction loss but lower gate charge - better for ultra-high-frequency (>1.2 MHz) low-current POLs	Select when gate drive power budget is tighter than thermal margin
SiR626DP-T1-GE3	R_DS(on) = 2.3 mΩ @ 10 V; Q_g = 41 nC; TrenchFET Gen IV, 5×6 mm PQFN	Lower R_DS(on) but higher Q_g - suited for fixed-frequency, high-current, low-switching-loss priority designs	Select when minimizing full-load conduction loss outweighs gate drive complexity

Compared with IRFH5004TRPBF, IRFH8316TRPBF delivers 21% lower R_DS(on) at identical footprint, trading 36% higher Q_g; versus SiR626DP-T1-GE3, it offers 13% lower Q_g with only 4% higher R_DS(on), favoring high-frequency efficiency-critical VRMs.

Availability

IRFH8316TRPBF is available at Aetrix Electronics and suitable for server VRMs, AI accelerator power delivery, industrial motor drive gate drivers, and telecom base station DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for IRFH8316TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to Infineon's OptiMOS™ 5 family, engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter, AI, and industrial power systems where thermal density and switching speed are critical.

FAQ

What is the maximum continuous drain current at case temperature of 100°C?

The IRFH8316TRPBF supports 120 A continuous drain current at T_C(Bottom) = 25°C, derating linearly to 50 A at T_C(Bottom) = 100°C per the datasheet's ID vs. TC curve. This reflects thermal limitation of the internal bond wires, not silicon capability.

Does this MOSFET require a negative gate voltage for reliable turn-off in high-dV/dt environments?

No - the device has a gate threshold voltage range of 1.2–2.2 V and is fully specified for 0 V to +10 V gate drive. Negative gate bias is not required; however, a −5 V to −10 V turn-off voltage may improve noise immunity in >100 V/ns dV/dt applications like motor drives.

Can the exposed drain paddle be electrically isolated from the PCB ground plane?

No - the drain terminals (pins 1–7 and bottom paddle) are internally shorted. Isolating the paddle from the PCB ground violates the electrical design and compromises thermal performance. It must be soldered to a grounded copper pour for both electrical and thermal integrity.

What is the recommended minimum solder paste stencil aperture for the thermal pad?

A 90% open area stencil (e.g., 4.5 mm × 5.4 mm aperture for the 5 mm × 6 mm pad) with 0.15 mm thickness is recommended. This ensures sufficient solder volume for mechanical strength and thermal conduction while preventing solder bridging to adjacent pins during reflow.

IRFH8316TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 27A (Ta), 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.95mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 59 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3610 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 3.6W (Ta), 59W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-PQFN (5x6)

IRFH8316TRPBF FAQ

1.How can I place an order for IRFH8316TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH8316TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH8316TRPBF reliable?

The price and inventory of IRFH8316TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH8316TRPBF is usually 5 days.

3.What payment methods are accepted for IRFH8316TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH8316TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH8316TRPBF?

IRFH8316TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH8316TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH8316TRPBF?

For technical support, including IRFH8316TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH8316TRPBF requirements.

6.How does Aetrix verify that IRFH8316TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFH8316TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH8316TRPBF meets industry standards.

7.What is the process for return or replacement of IRFH8316TRPBF?

All IRFH8316TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH8316TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH8316TRPBF part is unused and in its original packaging.

Return procedure for IRFH8316TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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