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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH8324TRPBF

Name: IRFH8324TRPBF
Brand: Infineon Technologies
SKU: IRFH8324TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH8324TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IRFH8324TRPBF.pdf

Description:: MOSFET N-CH 30V 23A/90A PQFN

Quantity:: RFQ Add To RFQ list

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Inventory:5,734

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Product details

Overview

IRFH8324TRPBF from Infineon Technologies is a 30 V, 50 A N-channel enhancement-mode HEXFET Power MOSFET in PQFN 5×6 mm package, optimized as a synchronous rectifier in high-frequency buck converters. It delivers R_DS(on) of 3.3 mΩ (typ.) at V_GS = 10 V and 4.1 mΩ (max.), with 14 nC total gate charge and 2.3°C/W junction-to-case (bottom) thermal resistance.

For engineers reviewing the IRFH8324TRPBF datasheet, IRFH8324TRPBF pinout, IRFH8324TRPBF application, or IRFH8324TRPBF equivalent, key selection criteria include low R_DS(on) at 4.5 V drive, fast switching (t_r = 26 ns, t_f = 8.5 ns), body diode Q_rr = 25–38 nC, and MSL1 reliability for high-volume surface-mount manufacturing.

Technical Context

This device operates as a high-efficiency synchronous rectifier in DC-DC power stages, leveraging its low on-resistance and fast body diode recovery to minimize conduction and switching losses. Its PQFN 5×6 mm package features exposed bottom thermal pad and industry-standard pinout (G-D-S), enabling direct PCB heat sinking.

The MOSFET exhibits gate threshold voltage V_GS(th) = 1.35–2.35 V, temperature-stable R_DS(on) (normalized drift <1.8× from 25°C to 150°C), and robust avalanche capability (E_AS = 350 mJ at I_D = 20 A). It supports 4.5 V logic-level drive while maintaining rated current under thermal constraints.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Supports input rails up to 24 V in buck converters with margin
R_DS(on) max @ 10 V	4.1 mΩ - Enables ≤1.0 W conduction loss at 50 A continuous drain current
Q_g typ.	14 nC - Reduces gate drive power and enables >1 MHz switching with low-side driver
R_θJC (bottom)	2.3°C/W - Allows direct thermal coupling to PCB copper for efficient heat removal
Q_rr	25–38 nC - Limits reverse recovery loss and EMI during synchronous rectification
t_r/t_f	26 ns / 8.5 ns - Supports fast transition control to reduce overlap loss in synchronous FETs
V_GS(th)	1.35–2.35 V - Ensures reliable turn-on with 3.3 V or 5 V gate drivers

Pinout & Package

PQFN 5×6 mm package with exposed thermal pad on bottom surface; 3-pin configuration (Gate, Drain, Source) arranged in standard industry pinout for multi-vendor compatibility and automated placement.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal accepting 0–10 V logic-level signals; low C_iss (2380 pF) minimizes driver loading
D	Drain	Main current path input; connected to switch node in buck topology; tied to exposed copper pad for thermal conduction
S	Source	Reference node for gate drive and current return; bonded to internal source metal and thermal pad for low-inductance layout

Key Features

Feature	Design Value
Low R_DS(on) at 4.5 V	6.3 mΩ max - Enables full-rated current operation with 3.3 V microcontroller GPIO or dedicated gate driver
MSL1 moisture sensitivity	Unlimited floor life at ≤30°C/60% RH - Eliminates bake requirements before reflow
RoHS-compliant, halogen-free	No lead, bromide, or halogen - Meets IPC-1752A environmental compliance for global OEM shipments
Optimized body diode	Q_rr = 25–38 nC, t_rr = 16–24 ns - Reduces shoot-through risk and improves light-load efficiency in synchronous rectification

Applications

Server VRM

GPU Power Delivery

Use Scenario: High-current, multi-phase buck converter supplying core voltage to Intel/AMD CPUs in rack-mounted servers.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in each phase leg, operating at 500 kHz–1 MHz with precise dead-time control.

Use Value: 4.1 mΩ R_DS(on) and 2.3°C/W thermal resistance enable ≥95% efficiency at 100 A per phase with minimal heatsink area.

Use Scenario: Compact, high-density power stage delivering up to 600 W to discrete or integrated GPUs in AI workstations and gaming PCs.

IC Role / Device Role / Timing Role: Low-side synchronous FET paired with high-side GaN or Si MOSFET in 3-phase or 4-phase interleaved design.

Use Value: Fast 8.5 ns fall time and low Q_gd (3.5 nC) reduce switching loss and improve transient response during dynamic load steps.

Telecom DC-DC Module

Industrial PLC Power Supply

Use Scenario: Isolated intermediate bus converter (48 V → 12 V) in 5G base station power shelves requiring high reliability and long lifetime.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier operating continuously at 85°C ambient with forced air cooling.

Use Value: Stable R_DS(on) over temperature (≤1.8× increase to 150°C) ensures predictable conduction loss across full operating range.

Use Scenario: Non-isolated 24 V → 5 V/3.3 V point-of-load regulator powering FPGA, MCU, and I/O in programmable logic controllers.

IC Role / Device Role / Timing Role: Primary-side high-efficiency switch in compact 12 mm × 12 mm module with no external heatsink.

Use Value: PQFN 5×6 mm footprint and 1.2 mm profile allow stacking with inductors and capacitors in ultra-thin industrial enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFH5020TRPBF	R_DS(on) = 2.0 mΩ @ 10 V; higher Q_g = 22 nC; same PQFN 5×6 mm package	Better conduction loss but slower switching; suited for lower-frequency, high-current designs	Select when thermal budget allows larger die size and switching frequency ≤300 kHz
SiR872DP-T1-GE3	R_DS(on) = 3.7 mΩ @ 10 V; Q_g = 16 nC; TrenchFET® Gen IV process; same footprint	Higher body diode V_SD (1.2 V vs. 1.0 V); slightly higher Q_rr (42 nC)	Prefer when supply chain diversification is required and minor efficiency trade-off is acceptable

Compared with IRFH5020TRPBF and SiR872DP-T1-GE3, IRFH8324TRPBF offers optimal balance of low gate charge (14 nC), tight R_DS(on) tolerance (3.3–4.1 mΩ), and proven body diode performance for high-frequency synchronous rectification in space-constrained systems.

Availability

IRFH8324TRPBF is available at Aetrix Electronics and suitable for server VRMs, GPU power delivery modules, and telecom DC-DC converters requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for IRFH8324TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon-based power MOSFETs and wide-bandgap solutions.

This device belongs to Infineon's TrenchStop™ and HEXFET® families designed specifically for high-efficiency, high-frequency DC-DC conversion in computing, communications, and industrial power systems.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFH8324TRPBF supports 18 A continuous drain current at T_C(Bottom) = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area (≥1000 mm² 2 oz Cu) under the exposed thermal pad and natural convection cooling.

Does this MOSFET require a gate resistor for stability in synchronous buck operation?

A gate resistor (typically 1–5 Ω) is recommended to dampen ringing caused by gate loop inductance and prevent unintended oscillation. The device's low gate resistance (1.1 Ω typ.) and 14 nC Q_g make it sensitive to PCB layout parasitics; resistor value must be tuned based on driver strength and layout.

Can IRFH8324TRPBF be used as a high-side switch in a buck converter?

No - it is an N-channel MOSFET without integrated bootstrap circuitry or level-shifting capability. As a high-side switch, it requires a floating gate driver referenced to the switch node. Its optimized characteristics target low-side/synchronous rectifier roles where source is grounded or near-ground potential.

Is the PQFN 5×6 mm package compatible with standard reflow profiles?

Yes - the IRFH8324TRPBF is qualified for MSL1 and supports JEDEC J-STD-020D reflow profiles, including peak temperatures up to 260°C for ≤30 seconds. Its halogen-free, RoHS-compliant construction ensures compatibility with lead-free soldering processes without delamination or voiding risks.

IRFH8324TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 23A (Ta), 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.1mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2380 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 3.6W (Ta), 54W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PQFN (5x6)

IRFH8324TRPBF FAQ

1.How can I place an order for IRFH8324TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH8324TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH8324TRPBF reliable?

The price and inventory of IRFH8324TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH8324TRPBF is usually 5 days.

3.What payment methods are accepted for IRFH8324TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH8324TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH8324TRPBF?

IRFH8324TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH8324TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH8324TRPBF?

For technical support, including IRFH8324TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH8324TRPBF requirements.

6.How does Aetrix verify that IRFH8324TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFH8324TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH8324TRPBF meets industry standards.

7.What is the process for return or replacement of IRFH8324TRPBF?

All IRFH8324TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH8324TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH8324TRPBF part is unused and in its original packaging.

Return procedure for IRFH8324TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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