Infineon Technologies IRFH8325TRPBF

Overview

IRFH8325TRPBF from Infineon Technologies is a 30 V, 25 A N-channel enhancement-mode HEXFET Power MOSFET in PQFN 5×6 mm package, optimized as a synchronous rectifier in high-frequency buck converters. It delivers R_DS(on) = 4.1 mΩ (typ) at V_GS = 10 V and 5.0 mΩ (max) at V_GS = 10 V, with low Q_g = 15 nC (typ) and thermal resistance R_θJC(bottom) = 2.3 °C/W for efficient PCB heat transfer.

For engineers reviewing the IRFH8325TRPBF datasheet, IRFH8325TRPBF pinout, IRFH8325TRPBF application, or IRFH8325TRPBF equivalent, key selection criteria include its low-profile PQFN package, gate threshold voltage of 1.8 V (typ), body diode reverse recovery charge Q_rr = 25–38 nC, and suitability for 500 kHz+ switching in server VRMs and POL converters.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve high current density and fast switching with minimal gate drive energy. Its low R_DS(on) and 15 nC total gate charge enable reduced conduction and switching losses in synchronous rectification topologies.

The device integrates a robust intrinsic body diode with t_rr = 16–24 ns and Q_rr = 25–38 nC, supporting zero-voltage switching (ZVS) transitions in high-efficiency DC-DC stages. Thermal design leverages bottom-side copper pad contact for direct PCB thermal coupling, not top-side heatsinking.

Key Specifications

Pinout & Package

PQFN 5×6 mm Outline "E" package with exposed bottom thermal pad and industry-standard 3-pin layout (Drain, Source, Gate). Pin 1 identifier marked on top surface; no top-side thermal interface required.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Compared with IRFH8325TRPBF, SiR872DP-T1-GE3 offers marginally lower R_DS(on) but requires more gate drive energy, while DMTH3005LPS-13 trades 0.7 mΩ higher on-resistance for 1.5 nC lower Q_g, favoring high-frequency operation with light-to-moderate loads.

Availability

IRFH8325TRPBF is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, industrial motor drive gate drivers, and automotive ADAS power supplies requiring stable component supply and long-term production continuity.

Supply support for IRFH8325TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to Infineon's OptiMOS™ 50 V/30 V low-voltage power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in computing and communications infrastructure.

FAQ

What is the maximum continuous drain current for IRFH8325TRPBF at 100°C case temperature?

At T_C(bottom) = 100°C, the continuous drain current is 17 A per the Absolute Maximum Ratings table. This derating reflects thermal limits of the PQFN package's bottom-side thermal path and ensures junction temperature remains within the -55°C to +150°C operating range under sustained load.

Does IRFH8325TRPBF require a gate resistor for stability in synchronous buck applications?

Yes - a gate resistor (typically 1.0–2.2 Ω) is recommended to dampen ringing caused by parasitic inductance in the gate loop. The device's 1.1 Ω typical gate resistance and 15 nC Q_g make it susceptible to oscillation without controlled turn-on/turn-off slew rates, especially at >300 kHz switching frequencies.

Can IRFH8325TRPBF be used in avalanche-rated circuits?

No - IRFH8325TRPBF is not characterized or guaranteed for repetitive avalanche operation. While single-pulse avalanche energy E_AS is specified at 300 mJ (at I_AS = 20 A), the datasheet does not define safe operating area (SOA) for repetitive unclamped inductive switching, and use in such conditions voids warranty.

Is the PQFN 5×6 mm package of IRFH8325TRPBF compatible with standard reflow profiles?

Yes - the device is qualified to JEDEC J-STD-020D MSL1 level and supports standard lead-free reflow profiles with peak temperatures up to 260°C. Its halogen-free, RoHS-compliant construction and robust copper clip interconnect ensure reliability through multiple thermal cycles without delamination or bond wire fatigue.