Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFHM8326TRPBFXTMA1

Name: IRFHM8326TRPBFXTMA1
Brand: Infineon Technologies
SKU: IRFHM8326TRPBFXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFHM8326TRPBFXTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-WDFN Exposed Pad

Datasheet:: IRFHM8326TRPBFXTMA1.pdf

Description:: TRENCH <= 40V

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,996

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFHM8326TRPBFXTMA1 from Infineon Technologies is a 30 V, 70 A (T_C = 25°C) N-channel PQFN-packaged power MOSFET optimized for high-current load switching and synchronous rectification in DC-DC converters. It delivers R_DS(on) of 3.8 mΩ (typ.) at V_GS = 10 V and 5.2 mΩ (typ.) at V_GS = 4.5 V, with low Q_g (20 nC typ.) and ultra-low thermal resistance (3.4°C/W junction-to-case via bottom side). It is used in notebook battery charge/discharge switches and high-density buck converter synchronous MOSFETs.

For engineers reviewing the IRFHM8326TRPBFXTMA1 datasheet, IRFHM8326TRPBFXTMA1 pinout, IRFHM8326TRPBFXTMA1 application, or IRFHM8326TRPBFXTMA1 equivalent, key selection criteria include verified R_DS(on) at 4.5 V drive, PQFN 3.3 × 3.3 mm package thermal performance, gate charge profile for fast switching, and body diode recovery characteristics in synchronous buck topologies.

Technical Context

This MOSFET employs trench-gate HEXFET® technology with source-bonding construction to support 70 A continuous drain current at T_C = 25°C and sustain pulsed currents up to 278 A. Its low-profile PQFN package features exposed thermal pad on the bottom and standard industry pinout for multi-vendor compatibility.

The device exhibits V_GS(th) of 1.7 V (typ.), 22 mV/°C breakdown voltage temperature coefficient, and C_iss/C_oss/C_rss values of 2496 pF / 524 pF / 273 pF at V_DS = 10 V, enabling predictable high-frequency switching behavior in synchronous buck stages operating up to 1 MHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in industrial and computing power supplies.
R_DS(on) @ 10 V	3.8 mΩ (typ.) - Enables <1 W conduction loss at 20 A, critical for thermally constrained notebook battery switches.
R_DS(on) @ 4.5 V	5.2 mΩ (typ.) - Ensures robust turn-on under logic-level gate drive in system power rail controllers.
Q_g	20 nC (typ.) - Supports efficient 500 kHz–1 MHz switching with moderate gate driver strength (e.g., 1–2 A peak).
R_θJC (Bottom)	3.4°C/W - Allows direct PCB copper thermal spreading for >30 W power dissipation without heatsink in compact layouts.
I_D (T_C = 25°C)	70 A - Rated for high-current synchronous FET operation in multiphase CPU/GPU VRMs and battery protection circuits.
V_GS max	±20 V - Permits safe gate overdrive during transient conditions and supports bootstrap gate drive topologies.

Pinout & Package

Package: PQFN 3.3 mm × 3.3 mm, 8-pin, exposed thermal pad (bottom-side cooling), MSL1 rated, RoHS compliant.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt synchronous rectifier applications.
5, 6, 7, 8	Drain (D)	Four paralleled drain terminals minimize channel resistance and enhance thermal path to PCB copper pour beneath the package.
Center Pad	Drain (D)	Exposed metal pad electrically connected to drain and thermally coupled to PCB ground plane for optimal heat extraction.
Pin 6 (marked)	Gate (G)	Single gate terminal located adjacent to source pins to minimize gate loop inductance and suppress ringing during hard switching.

Key Features

Feature	Design Value
Low R_θJC (3.4°C/W)	Enables >30 W continuous power handling with only PCB copper thermal management-no heatsink required in space-constrained notebooks.
Industry-standard pinout	Ensures drop-in replacement across multiple vendors' 3.3 × 3.3 mm PQFN 30 V MOSFETs, reducing redesign risk in production BOMs.
Low-profile height (<1.05 mm)	Permits integration beneath thin-profile components (e.g., memory modules, SSDs) in ultrabook and tablet power systems.
RoHS + Halogen-free	Meets IPC-1752A environmental compliance requirements for consumer electronics and enterprise client devices.

Applications

Charge/Discharge Switch

System Power Switch

Use Scenario: Bidirectional battery switching in ultrabook platforms managing charging from AC adapter and discharging to system loads.

IC Role / Device Role / Timing Role: High-side N-channel load switch controlled by dedicated battery management IC with 4.5 V gate drive.

Use Value: Low R_DS(on) at 4.5 V ensures <150 mW conduction loss at 5 A, extending runtime and minimizing thermal stress on battery connector traces.

Use Scenario: Always-on rail switching for USB-C PD port power path control in docking stations and portable monitors.

IC Role / Device Role / Timing Role: Load switch enabling/disabling 5–20 V system rails with fast turn-on (<50 ns) and minimal voltage droop.

Use Value: 20 nC Q_g allows sub-microsecond switching with low-power gate drivers, reducing standby leakage and improving dynamic response.

Synchronous Buck FET

Hot-Swap Controller FET

Use Scenario: Lower-side synchronous rectifier in 1–3 phase CPU/GPU VRMs delivering up to 100 A per phase in thin-client workstations.

IC Role / Device Role / Timing Role: Fast-recovery N-channel MOSFET replacing Schottky diodes to reduce conduction losses and improve efficiency above 200 kHz.

Use Value: Body diode t_rr = 15 ns (typ.) and Q_rr = 14 nC (typ.) minimize reverse recovery loss and EMI in high-frequency buck converters.

Use Scenario: Inrush current limiting and fault isolation in 12 V industrial I/O modules with hot-plug capability.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) pass element in discrete hot-swap circuit with external current-sense amplifier and comparator.

Use Value: 70 A rating and 3.4°C/W R_θJC allow sustained 30 A operation during 100 ms inrush events without thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	R_DS(on) = 3.3 mΩ @ 10 V; Q_g = 22 nC; same PQFN 3.3×3.3 mm package	Slightly lower R_DS(on) but higher Q_g; identical thermal resistance and pinout	Preferred when lowest conduction loss dominates over switching loss in <300 kHz applications.
DMTH3006LPS-13	R_DS(on) = 4.2 mΩ @ 10 V; Q_g = 17 nC; same footprint, different marking layout	Lower gate charge improves high-frequency efficiency but trades off ~10% higher conduction loss	Optimal for 500 kHz–1 MHz buck converters where switching loss exceeds conduction loss.

Compared with SiR872DP-T1-GE3 and DMTH3006LPS-13, IRFHM8326TRPBFXTMA1 offers the best balance of low R_DS(on) at 4.5 V (5.2 mΩ) and moderate Q_g (20 nC), making it uniquely suited for logic-level-driven battery switches and mid-frequency synchronous rectifiers where both drive voltage headroom and switching speed matter.

Availability

IRFHM8326TRPBFXTMA1 is available at Aetrix Electronics and suitable for notebook battery management, industrial hot-swap modules, high-density DC-DC converters, and USB-C PD power path control requiring stable component supply and full traceability.

Supply support for IRFHM8326TRPBFXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-current switching in space-constrained computing and portable power systems where thermal density and gate drive compatibility are critical.

FAQ

What is the maximum continuous drain current at T_C = 100°C?

The IRFHM8326TRPBFXTMA1 supports 44 A continuous drain current at case temperature of 100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits imposed by the PQFN package's 3.4°C/W R_θJC and ambient thermal design; actual usable current depends on PCB copper area and airflow.

Is this MOSFET suitable for 3.3 V gate drive applications?

No - the device has a typical V_GS(th) of 1.7 V but requires ≥4.5 V gate drive to achieve its rated R_DS(on) of 5.2 mΩ. At 3.3 V, R_DS(on) rises significantly (>12 mΩ), increasing conduction loss beyond acceptable levels for high-current applications.

Does the body diode support synchronous rectification without external snubbing?

Yes - with t_rr = 15 ns (typ.) and Q_rr = 14 nC (typ.) at I_F = 20 A, the intrinsic body diode enables clean commutation in synchronous buck converters up to 1 MHz when paired with appropriate gate timing control to avoid cross-conduction.

What is the recommended PCB footprint and stencil design?

Infineon specifies a 3.3 mm × 3.3 mm land pattern with 0.4 mm solder mask defined pads and a 0.25 mm thick stencil aperture for the thermal pad. Full details are provided in Application Note AN-1136, which recommends 90% copper fill under the exposed pad and thermal vias spaced ≤1 mm apart for optimal heat transfer.

IRFHM8326TRPBFXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-WDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Ta), 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.7mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 39 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2496 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 37W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-PQFN (3.1x3.1)

IRFHM8326TRPBFXTMA1 FAQ

1.How can I place an order for IRFHM8326TRPBFXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFHM8326TRPBFXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFHM8326TRPBFXTMA1 reliable?

The price and inventory of IRFHM8326TRPBFXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFHM8326TRPBFXTMA1 is usually 5 days.

3.What payment methods are accepted for IRFHM8326TRPBFXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFHM8326TRPBFXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFHM8326TRPBFXTMA1?

IRFHM8326TRPBFXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFHM8326TRPBFXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFHM8326TRPBFXTMA1?

For technical support, including IRFHM8326TRPBFXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFHM8326TRPBFXTMA1 requirements.

6.How does Aetrix verify that IRFHM8326TRPBFXTMA1 is sourced from the original manufacturer or authorized distributors?

All IRFHM8326TRPBFXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFHM8326TRPBFXTMA1 meets industry standards.

7.What is the process for return or replacement of IRFHM8326TRPBFXTMA1?

All IRFHM8326TRPBFXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IRFHM8326TRPBFXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFHM8326TRPBFXTMA1 part is unused and in its original packaging.

Return procedure for IRFHM8326TRPBFXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.