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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFI520G

Name: IRFI520G
Brand: Vishay Siliconix
SKU: IRFI520G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFI520G

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack, Isolated Tab

Datasheet:: IRFI520G.pdf

Description:: MOSFET N-CH 100V 7.2A TO220-3

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Product details

Overview

IRFI520G from Vishay Siliconix is a 100 V, 7.2 A N-channel power MOSFET in TO-220 FULLPAK package with 0.27 Ω R_DS(on) at V_GS = 10 V, 2.5 kV_RMS isolation rating, and 175 °C maximum junction temperature-designed for isolated switch-mode power supplies and industrial motor controls.

For engineers reviewing the IRFI520G datasheet, IRFI520G pinout, IRFI520G application, or IRFI520G equivalent, this page delivers verified thermal resistance (R_thJC = 4.1 °C/W), avalanche energy rating (E_AS = 36 mJ), body diode recovery time (t_rr = 130–260 ns), and gate charge profile (Q_g = 16 nC) to support robust high-voltage switching design.

Technical Context

This third-generation power MOSFET uses planar V-groove technology optimized for fast switching and rugged unclamped inductive switching (UIS). Its isolated TO-220 FULLPAK package integrates high-voltage insulation (2.5 kV_RMS) and low thermal resistance (4.1 °C/W junction-to-case) without external insulators.

The device features dynamic dV/dt immunity (5.5 V/ns), low gate charge (Q_g = 16 nC), and a built-in body diode with 130–260 ns reverse recovery time-enabling reliable operation in hard-switched flyback, forward, and DC-DC converter topologies at up to 175 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports primary-side switching in offline SMPS up to 85–265 VAC input with margin
R_DS(on)	0.27 Ω @ V_GS = 10 V - enables ≤1.5 W conduction loss at 7.2 A continuous drain current
Q_g	16 nC - determines gate drive power requirement and switching speed in hard-switched applications
E_AS	36 mJ - specifies single-pulse avalanche energy handling capability during inductive turn-off transients
R_thJC	4.1 °C/W - allows direct heatsink mounting with predictable thermal rise under 37 W power dissipation
t_rr	130–260 ns - defines body diode recovery window affecting cross-conduction risk in synchronous rectification

Pinout & Package

IRFI520G is housed in a TO-220 FULLPAK package with electrically isolated tab (drain-connected), enabling direct heatsink mounting without insulating hardware. The molded compound provides 2.5 kV_RMS isolation and 4.8 mm creepage between sink and leads.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires 10 V drive for full enhancement; ±20 V absolute max rating
D	Drain	High-side switching node; connected to isolated metal tab; rated for 100 V repetitive blocking
S	Source	Power return path; referenced to gate drive ground; carries full load current and body diode reverse recovery charge

Key Features

Feature	Design Value
2.5 kV_RMS isolation	Eliminates need for mica washers or insulating pads when mounting to grounded heatsinks in AC/DC converters
175 °C operating temperature	Supports high-ambient designs in enclosed industrial enclosures without derating below 100 °C ambient
Dynamic dV/dt rating of 5.5 V/ns	Prevents false turn-on during high-slew-rate voltage transients in bridge-leg or phase-shifted topologies
Low R_thJC = 4.1 °C/W	Enables >90% of rated 37 W power dissipation to be transferred directly to heatsink with minimal thermal interface resistance

Applications

Industrial Motor Drives	Offline SMPS Primary Switch
Use Scenario: Half-bridge IGBT gate driver supply and auxiliary power rail generation in variable-frequency drives. IC Role / Device Role / Timing Role: High-side N-channel MOSFET switch controlling isolated 15 V bias supply winding. Use Value: 2.5 kV_RMS isolation ensures safety compliance across reinforced insulation barriers in IEC 61800-5-1 systems.	Use Scenario: Primary-side switch in 65–150 W universal-input flyback converters for industrial HMIs and PLC power modules. IC Role / Device Role / Timing Role: Main power switch cycling at 65–132 kHz with 100 V blocking and 7.2 A peak current capability. Use Value: 36 mJ single-pulse avalanche rating absorbs leakage inductance spikes without snubber redesign.
DC-DC Converter High-Side Switch	Inductive Load Driver
Use Scenario: 48 V input–12 V output non-isolated buck converter in telecom shelf management units. IC Role / Device Role / Timing Role: Synchronous high-side switch with body diode conducting freewheeling current during low-side conduction. Use Value: 130–260 ns t_rr minimizes shoot-through risk when paired with matched low-side MOSFET and optimized gate timing.	Use Scenario: Solenoid and relay driver in factory automation controllers requiring 100 V inductive load interruption. IC Role / Device Role / Timing Role: Unclamped inductive switching device absorbing stored energy via internal avalanche breakdown. Use Value: Repetitive avalanche rating (I_AR = 7.2 A, E_AR = 3.7 mJ) enables reliable 100,000-cycle lifetime without external clamping.

Industrial Motor Drives

Offline SMPS Primary Switch

Use Scenario: Half-bridge IGBT gate driver supply and auxiliary power rail generation in variable-frequency drives.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET switch controlling isolated 15 V bias supply winding.

Use Value: 2.5 kV_RMS isolation ensures safety compliance across reinforced insulation barriers in IEC 61800-5-1 systems.

Use Scenario: Primary-side switch in 65–150 W universal-input flyback converters for industrial HMIs and PLC power modules.

IC Role / Device Role / Timing Role: Main power switch cycling at 65–132 kHz with 100 V blocking and 7.2 A peak current capability.

Use Value: 36 mJ single-pulse avalanche rating absorbs leakage inductance spikes without snubber redesign.

DC-DC Converter High-Side Switch

Inductive Load Driver

Use Scenario: 48 V input–12 V output non-isolated buck converter in telecom shelf management units.

IC Role / Device Role / Timing Role: Synchronous high-side switch with body diode conducting freewheeling current during low-side conduction.

Use Value: 130–260 ns t_rr minimizes shoot-through risk when paired with matched low-side MOSFET and optimized gate timing.

Use Scenario: Solenoid and relay driver in factory automation controllers requiring 100 V inductive load interruption.

IC Role / Device Role / Timing Role: Unclamped inductive switching device absorbing stored energy via internal avalanche breakdown.

Use Value: Repetitive avalanche rating (I_AR = 7.2 A, E_AR = 3.7 mJ) enables reliable 100,000-cycle lifetime without external clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NK100ZFP	1000 V V_DS, 10 A I_D, R_DS(on) = 0.75 Ω - higher voltage rating but higher on-resistance	Targeted at ZVS resonant converters where 1000 V blocking is required; not suitable for 100 V primary-side replacement	Select only if system requires >600 V blocking; IRFI520G offers lower conduction loss and better thermal performance at 100 V class
FQP5N10L	100 V V_DS, 5.1 A I_D, R_DS(on) = 0.35 Ω - logic-level gate, no isolation, TO-220 non-FULLPAK	Designed for 3.3/5 V microcontroller drive; lacks 2.5 kV_RMS isolation and high-temp capability	Choose only for low-voltage logic-driven loads; IRFI520G is mandatory where isolated heatsink mounting or 175 °C operation is required

Compared with STP10NK100ZFP and FQP5N10L, the IRFI520G uniquely combines 100 V/7.2 A rating, 2.5 kV_RMS isolation, and 175 °C operation in a single TO-220 FULLPAK package-making it irreplaceable in thermally constrained, safety-isolated industrial power stages.

Availability

IRFI520G is available at Aetrix Electronics and suitable for industrial motor drives, offline SMPS primary switching, and high-reliability DC-DC converter designs requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFI520G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFI520G belongs to Vishay's third-generation high-voltage power MOSFET family, engineered specifically for isolated, high-temperature switching applications in commercial-industrial power conversion equipment.

FAQ

What is the maximum continuous drain current for IRFI520G at 100 °C case temperature?

The IRFI520G supports 5.1 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limits of the TO-220 FULLPAK package and must be applied when heatsink temperature exceeds 25 °C. Designers should verify junction temperature using R_thJC = 4.1 °C/W and actual power dissipation to ensure operation remains within the -55 °C to +175 °C T_J range. The IRFI520G datasheet Fig. 9 provides full derating curves.

Does IRFI520G require external insulation when mounted to a grounded heatsink?

No, the IRFI520G does not require external insulation when mounted to a grounded heatsink. Its TO-220 FULLPAK package provides 2.5 kV_RMS isolation between the drain-connected tab and all leads, with 4.8 mm creepage distance. This eliminates the need for mica washers or silicone pads in most industrial AC/DC and DC/DC applications-verified per Vishay document 91143, Section "FEATURES" and "DESCRIPTION".

What is the typical gate threshold voltage range for IRFI520G?

IRFI520G has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at T_J = 25 °C, measured with V_DS = V_GS and I_D = 250 μA. This standard threshold enables compatibility with 10 V gate drivers while ensuring sufficient noise margin against spurious turn-on. The IRFI520G is not a logic-level device; 5 V-only drive will result in incomplete enhancement and excessive R_DS(on).

Can IRFI520G be used in avalanche mode for energy absorption?

Yes, IRFI520G is rated for both single-pulse (E_AS = 36 mJ) and repetitive avalanche operation (I_AR = 7.2 A, E_AR = 3.7 mJ). Its ruggedized die structure supports controlled avalanche during unclamped inductive switching events, such as transformer leakage spikes in flyback converters. The IRFI520G datasheet Fig. 12 and Section "ABSOLUTE MAXIMUM RATINGS" confirm these validated avalanche capabilities.

What is the drain-source body diode forward voltage of IRFI520G at 7.2 A?

The IRFI520G body diode forward voltage (V_SD) is 2.5 V maximum at T_J = 25 °C, I_S = 7.2 A, and V_GS = 0 V. This value impacts conduction losses during freewheeling intervals in buck or synchronous rectifier topologies. At elevated temperatures, V_SD decreases slightly due to negative temperature coefficient-data shown in Vishay document 91143, Fig. 7 confirms typical V_SD vs. current and temperature behavior for the IRFI520G.

IRFI520G Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack, Isolated Tab

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 7.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 270mOhm @ 4.3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 360 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 37W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

IRFI520G FAQ

1.How can I place an order for IRFI520G through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFI520G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFI520G reliable?

The price and inventory of IRFI520G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFI520G is usually 5 days.

3.What payment methods are accepted for IRFI520G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFI520G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFI520G?

IRFI520G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFI520G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFI520G?

For technical support, including IRFI520G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFI520G requirements.

6.How does Aetrix verify that IRFI520G is sourced from the original manufacturer or authorized distributors?

All IRFI520G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFI520G meets industry standards.

7.What is the process for return or replacement of IRFI520G?

All IRFI520G units undergo pre-shipment inspection (PSI). If there is an issue with IRFI520G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFI520G part is unused and in its original packaging.

Return procedure for IRFI520G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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