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Vishay Siliconix IRFI530GPBF
- Part No.:
- IRFI530GPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack, Isolated Tab
- Datasheet:
-
IRFI530GPBF.pdf
- Description:
- MOSFET N-CH 100V 9.7A TO220-3
- Quantity:
- Payment:
- Shipping:
Inventory:996
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Product details
Overview
IRFI530GPBF from Vishay Siliconix is a 100 V, 9.7 A N-channel power MOSFET in TO-220 FULLPAK package with isolated tab, RDS(on) = 0.16 Ω at VGS = 10 V, and 2.5 kVRMS isolation rating for high-voltage industrial switching applications such as AC/DC power supplies and motor control inverters.
For engineers reviewing the IRFI530GPBF datasheet, IRFI530GPBF pinout, IRFI530GPBF application, or IRFI530GPBF equivalent, this device requires attention to its isolated thermal path, avalanche energy rating (EAS = 100 mJ), dV/dt immunity (5.5 V/ns), and gate charge profile (Qg = 33 nC) when designing robust high-side switch or DC-DC synchronous rectifier circuits.
Technical Context
This third-generation power MOSFET uses planar V-groove technology optimized for fast switching and rugged unclamped inductive switching (UIS). Its isolated TO-220 FULLPAK package integrates a thermally efficient molding compound that delivers RthJC = 3.6 °C/W and eliminates need for mica insulators in heatsink mounting.
The device features dynamic dV/dt immunity up to 5.5 V/ns and supports repetitive avalanche operation (IAR = 9.7 A, EAR = 4.2 mJ), enabling reliable operation in hard-switched topologies without external snubbers. Body diode parameters - trr = 150–280 ns, Qrr = 0.85–1.7 μC - are specified under controlled dI/dt = 100 A/μs conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum drain-source blocking voltage; defines use in ≤100 V bus systems like 48 V telecom or 90 V AC line rectified rails. |
| RDS(on) | 0.16 Ω @ VGS = 10 V - Conduction loss of 9.4 W at 7.7 A continuous current; enables compact thermal design in 42 W PD-rated layouts. |
| Qg | 33 nC - Total gate charge determines driver strength requirement; ~1.7 A peak drive current needed for 20 ns rise time with 12 Ω gate resistor. |
| EAS | 100 mJ - Single-pulse avalanche energy rating; allows safe operation during transient overvoltage events without external clamping. |
| RthJC | 3.6 °C/W - Junction-to-case thermal resistance; enables direct heatsink mounting with clip or M3 screw, no insulator required. |
| dV/dt | 5.5 V/ns - Peak diode recovery dV/dt rating; ensures stable commutation in inductive loads without false turn-on. |
| ID (TC = 100 °C) | 6.9 A - Derated continuous current at 100 °C case temperature; defines usable current envelope in enclosed industrial enclosures. |
Pinout & Package
IRFI530GPBF is housed in TO-220 FULLPAK package: isolated plastic body with metal tab (drain-connected), 3-pin vertical leadframe, 15.87 mm height, 10.1 mm width, and 4.7 mm thickness. Tab provides 2.5 kVRMS isolation and serves as primary thermal path to heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level drive; threshold voltage 2.0–4.0 V ensures compatibility with standard microcontroller GPIO or dedicated gate drivers. |
| D (Drain) | Main power terminal | Connected internally to metal tab; must be electrically isolated from heatsink unless system ground reference permits direct mounting. |
| S (Source) | Power return and reference node | Serves as local ground reference for gate drive; internal source inductance (LS = 7.5 nH) impacts high-speed switching behavior and layout sensitivity. |
Key Features
| Feature | Design Value |
|---|---|
| Isolated TO-220 FULLPAK | Eliminates mica washers and thermal paste insulators - reduces assembly cost and thermal interface resistance by ~30 % vs. standard TO-220. |
| 2.5 kVRMS isolation | Rated for 60 s at 60 Hz; matches insulation requirements of IEC 60950-1 and UL 60950-1 for Class II AC/DC converters. |
| 175 °C max junction temperature | Enables operation in harsh environments (e.g., industrial motor drives) without derating below full current capability at elevated ambient. |
| Low RthJC = 3.6 °C/W | Supports >30 W continuous dissipation with passive heatsinking; enables smaller heatsinks than non-isolated equivalents with similar RDS(on). |
| Dynamic dV/dt immunity | 5.5 V/ns rating prevents spurious turn-on during fast voltage transients in half-bridge or LLC resonant converter nodes. |
Applications
| AC/DC Power Supply | Industrial Motor Control |
|---|---|
|
Use Scenario: High-voltage primary-side switching in offline flyback and forward converters operating from 85–265 VAC input. IC Role / Device Role / Timing Role: Main power switch handling 100 V drain stress and repetitive UIS events during transformer reset. Use Value: 100 mJ EAS rating absorbs energy from leakage inductance spikes without failure; isolated tab simplifies creepage compliance to 4.8 mm. |
Use Scenario: Half-bridge leg in 24–48 V BLDC motor controllers driving fans, pumps, or conveyors. IC Role / Device Role / Timing Role: Low-side switch with fast turn-off (tf = 25 ns) and low Qgd/Qg ratio (0.45) for reduced Miller-induced shoot-through risk. Use Value: RDS(on) = 0.16 Ω minimizes conduction loss at 7–9 A RMS; 175 °C TJ rating sustains operation in sealed enclosures with limited airflow. |
| DC-DC Synchronous Rectifier | Uninterruptible Power System (UPS) |
|
Use Scenario: Secondary-side synchronous rectification in isolated 12 V/24 V output DC-DC modules for telecom and server PSUs. IC Role / Device Role / Timing Role: N-channel rectifier switch replacing Schottky diodes; driven by transformer-coupled or active gate control. Use Value: Low Qrr (0.85–1.7 μC) and fast trr (150–280 ns) reduce reverse recovery losses; isolated tab avoids need for floating gate drive isolation. |
Use Scenario: Battery charging and inverter stage in line-interactive UPS systems with 48 V battery banks. IC Role / Device Role / Timing Role: Bidirectional switch in H-bridge inverter topology handling both charging and discharging currents. Use Value: Repetitive avalanche rating (IAR = 9.7 A, EAR = 4.2 mJ) tolerates load dump transients; 6.9 A current at 100 °C case supports sustained 1 kW output. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP10NK60ZFP | 600 V VDS, 10 A ID, RDS(on) = 0.72 Ω, TO-220FP package (non-isolated) | Higher voltage rating but higher RDS(on); requires external isolation hardware for same safety margin. | Choose when 600 V blocking is mandatory and thermal budget allows higher conduction loss. |
| FQP10N10 | 100 V VDS, 10 A ID, RDS(on) = 0.18 Ω, TO-220 package (non-isolated), no avalanche rating | Similar voltage/current but lacks 2.5 kVRMS isolation and EAS specification; lower dV/dt immunity (not rated). | Choose only in non-safety-critical, low-creepage designs where isolation hardware is already present. |
Compared with STP10NK60ZFP and FQP10N10, the IRFI530GPBF uniquely combines 100 V rating, certified isolation, and 100 mJ avalanche capability - making it the only option among the three suitable for safety-certified, space-constrained, high-reliability industrial power stages without added insulation components.
Availability
IRFI530GPBF is available at Aetrix Electronics and suitable for AC/DC power supplies, industrial motor drives, and uninterruptible power systems requiring stable component supply, long-term lifecycle support, and certified isolation performance.
Supply support for IRFI530GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency power solutions.
The IRFI530GPBF belongs to Vishay's isolated power MOSFET product line, engineered specifically for industrial and commercial power conversion systems where electrical isolation, thermal efficiency, and avalanche ruggedness are critical design requirements.
FAQ
What is the maximum continuous drain current for IRFI530GPBF at 100 °C case temperature?
The IRFI530GPBF supports 6.9 A continuous drain current at TC = 100 °C, as defined in its Absolute Maximum Ratings table. This value reflects linear derating from 9.7 A at 25 °C using the 0.28 W/°C factor. Designers must ensure heatsink design maintains case temperature ≤100 °C to sustain this current without exceeding 175 °C maximum junction temperature.
Does IRFI530GPBF require an insulating pad when mounted to a heatsink?
No - the IRFI530GPBF does not require an insulating pad because its TO-220 FULLPAK package provides 2.5 kVRMS isolation between the drain-connected tab and leads. The molding compound achieves isolation equivalent to a 100 µm mica barrier, allowing direct mechanical mounting via clip or M3 screw to grounded heatsinks in Class II systems.
What is the gate threshold voltage range for IRFI530GPBF?
The gate-source threshold voltage (VGS(th)) for IRFI530GPBF is specified as 2.0–4.0 V at VDS = VGS and ID = 250 µA. This range confirms compatibility with standard 5 V or 10 V logic-level gate drivers, though full enhancement requires VGS ≥ 10 V to achieve rated RDS(on) = 0.16 Ω.
Can IRFI530GPBF be used in avalanche mode repeatedly?
Yes - the IRFI530GPBF is rated for repetitive avalanche operation with IAR = 9.7 A and EAR = 4.2 mJ per pulse. These values are validated under defined test conditions (pulse width ≤ 300 µs, duty cycle ≤ 2 %) and allow safe use in circuits subject to inductive switching transients without external clamping, provided thermal limits are observed.
What is the body diode reverse recovery time for IRFI530GPBF?
The body diode reverse recovery time (trr) for IRFI530GPBF is 150–280 ns, measured at TJ = 25 °C, IF = 9.7 A, and dI/dt = 100 A/µs. This parameter directly affects switching losses in synchronous rectifier and freewheeling applications, and the specified range accounts for process variation across production lots.
IRFI530GPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack, Isolated Tab
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 9.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 160mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 33 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 670 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 42W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-3
IRFI530GPBF FAQ
1.How can I place an order for IRFI530GPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFI530GPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFI530GPBF reliable?
The price and inventory of IRFI530GPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFI530GPBF is usually 5 days.
3.What payment methods are accepted for IRFI530GPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFI530GPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFI530GPBF?
IRFI530GPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFI530GPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFI530GPBF?
For technical support, including IRFI530GPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFI530GPBF requirements.
6.How does Aetrix verify that IRFI530GPBF is sourced from the original manufacturer or authorized distributors?
All IRFI530GPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFI530GPBF meets industry standards.
7.What is the process for return or replacement of IRFI530GPBF?
All IRFI530GPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFI530GPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFI530GPBF part is unused and in its original packaging.
Return procedure for IRFI530GPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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