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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFI540G

Name: IRFI540G
Brand: Vishay Siliconix
SKU: IRFI540G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFI540G

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack, Isolated Tab

Datasheet:: IRFI540G.pdf

Description:: MOSFET N-CH 100V 17A TO220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFI540G from Vishay Siliconix is a 100 V, 17 A N-channel power MOSFET in TO-220 FULLPAK package with isolated tab, 0.077 Ω R_DS(on) at V_GS = 10 V, and 2.5 kV_RMS isolation rating-designed for high-reliability switch-mode power supplies, motor drives, and industrial AC/DC converters requiring thermal robustness and creepage safety.

For engineers reviewing the IRFI540G datasheet, IRFI540G pinout, IRFI540G application, or IRFI540G equivalent, this page delivers verified electrical specs, thermal performance data, isolation-critical mounting guidance, and real-world switching behavior (t_d(on) = 11 ns, t_r = 44 ns) to support layout validation and safety-compliant heatsink integration.

Technical Context

The IRFI540G employs third-generation planar VDMOS technology optimized for fast switching and rugged avalanche operation, featuring dynamic dV/dt rating of 5.5 V/ns and unclamped inductive switching capability up to 720 mJ. Its isolated TO-220 FULLPAK construction eliminates need for mica washers by delivering 4.8 mm sink-to-lead creepage and 2.5 kV_RMS isolation at 60 Hz for 60 s.

Thermal design is enabled by low R_thJC = 3.1 °C/W and 175 °C maximum junction temperature, while gate charge profile (Q_g = 72 nC, Q_gd = 32 nC) supports efficient drive with standard 9.1 Ω gate resistor in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Supports 80 V DC bus designs with 20 % margin for transients in industrial SMPS.
R_DS(on) @ V_GS = 10 V	0.077 Ω - Enables ≤1.3 W conduction loss at 13 A continuous drain current (T_C = 100 °C).
Q_g	72 nC - Requires ≥1.5 A peak gate drive for <100 ns turn-on in 100 kHz PWM applications.
E_AS	720 mJ - Withstands single-pulse inductive energy without failure in relay/snubberless motor control.
R_thJC	3.1 °C/W - Allows 48 W power dissipation with ≤150 °C case-to-heatsink ΔT using standard clip-mounting.
Isolation Voltage	2.5 kV_RMS/60 s - Meets IEC 60950-1 reinforced insulation requirements for primary-secondary barrier in offline converters.
Body Diode t_rr	180–360 ns - Enables moderate-frequency freewheeling in non-synchronous buck or flyback outputs.

Pinout & Package

IRFI540G uses TO-220 FULLPAK package with electrically isolated metal tab (drain-connected), enabling direct heatsink mounting without insulating hardware. Package dimensions conform to Vishay Document 91359: D = 15.87 mm (length), E = 10.10 mm (width), L = 13.10 mm (height), with 4.8 mm minimum creepage between tab and leads.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; input capacitance C_iss = 1700 pF requires careful gate loop inductance control.
D (Drain)	Main current output / tab connection	Tab is internally connected to drain and isolated at 2.5 kV_RMS; serves as thermal path and high-side switching node.
S (Source)	Reference terminal / return path	Low-inductance source connection critical for stable dV/dt immunity; internal L_S = 7.5 nH affects diode recovery ringing.

Key Features

Feature	Design Value
High-voltage isolation	2.5 kV_RMS (60 s, 60 Hz) enables direct heatsink mounting without mica or silicone pads in Class I/II AC-DC systems.
175 °C operating temperature	Supports full 17 A continuous current derating to 12 A at T_C = 100 °C-suitable for sealed industrial enclosures.
Low R_thJC = 3.1 °C/W	Reduces thermal interface resistance by >40 % vs. standard TO-220, allowing smaller heatsinks in space-constrained designs.
Dynamic dV/dt rating = 5.5 V/ns	Ensures reliable turn-off under fast-rising voltage transients in bridge-leg configurations without spurious turn-on.
Unclamped avalanche energy = 720 mJ	Eliminates need for external snubbers in inductive load switching (e.g., solenoid drivers, fan controllers).

Applications

AC-DC Power Supplies	Industrial Motor Drives
Use Scenario: Primary-side switching in 100–500 W offline flyback and forward converters. IC Role / Device Role / Timing Role: High-side main switch handling 100 V DC link with synchronous rectification timing coordination. Use Value: 2.5 kV_RMS isolation allows direct heatsink attachment to chassis ground, simplifying Y-cap placement and reducing EMI filter size.	Use Scenario: Half-bridge leg in 3-phase BLDC motor inverters for HVAC blowers and pumps. IC Role / Device Role / Timing Role: Low-side switching element with fast body diode recovery (t_rr = 180–360 ns) for commutation freewheeling. Use Value: 175 °C junction rating ensures sustained 12 A operation at 100 °C case temperature in enclosed motor control modules.
Uninterruptible Power Systems	LED Constant-Current Drivers
Use Scenario: Battery charging FET and inverter H-bridge switching in 12–48 V UPS units. IC Role / Device Role / Timing Role: Bidirectional power path switch supporting both charge and discharge cycles with avalanche ruggedness. Use Value: 720 mJ single-pulse avalanche energy withstands battery short-circuit events without device failure.	Use Scenario: High-side dimming switch in constant-current LED drivers for street lighting and signage. IC Role / Device Role / Timing Role: PWM-controlled current regulator with low R_DS(on) minimizing thermal rise in high-brightness arrays. Use Value: 0.077 Ω on-resistance limits conduction loss to <1.2 W at 12 A, enabling passive cooling in outdoor-rated enclosures.

AC-DC Power Supplies

Industrial Motor Drives

Use Scenario: Primary-side switching in 100–500 W offline flyback and forward converters.

IC Role / Device Role / Timing Role: High-side main switch handling 100 V DC link with synchronous rectification timing coordination.

Use Value: 2.5 kV_RMS isolation allows direct heatsink attachment to chassis ground, simplifying Y-cap placement and reducing EMI filter size.

Use Scenario: Half-bridge leg in 3-phase BLDC motor inverters for HVAC blowers and pumps.

IC Role / Device Role / Timing Role: Low-side switching element with fast body diode recovery (t_rr = 180–360 ns) for commutation freewheeling.

Use Value: 175 °C junction rating ensures sustained 12 A operation at 100 °C case temperature in enclosed motor control modules.

Uninterruptible Power Systems

LED Constant-Current Drivers

Use Scenario: Battery charging FET and inverter H-bridge switching in 12–48 V UPS units.

IC Role / Device Role / Timing Role: Bidirectional power path switch supporting both charge and discharge cycles with avalanche ruggedness.

Use Value: 720 mJ single-pulse avalanche energy withstands battery short-circuit events without device failure.

Use Scenario: High-side dimming switch in constant-current LED drivers for street lighting and signage.

IC Role / Device Role / Timing Role: PWM-controlled current regulator with low R_DS(on) minimizing thermal rise in high-brightness arrays.

Use Value: 0.077 Ω on-resistance limits conduction loss to <1.2 W at 12 A, enabling passive cooling in outdoor-rated enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16NF10	100 V, 16 A, R_DS(on) = 0.085 Ω, non-isolated TO-220, no specified isolation voltage	Lacks 2.5 kV_RMS isolation; requires insulating washer and thermal pad for heatsink mounting	Select when isolation is handled at board level and cost sensitivity outweighs assembly simplification.
FQP13N10L	100 V, 13 A, R_DS(on) = 0.12 Ω, logic-level gate (V_GS(th) = 1–2.5 V), non-isolated TO-220	Lower gate threshold enables direct microcontroller drive but sacrifices current rating and thermal margin	Prefer for low-power, low-voltage control interfaces where 13 A peak suffices and isolation is externally managed.

Compared with STP16NF10 and FQP13N10L, the IRFI540G uniquely combines certified 2.5 kV_RMS isolation, 17 A current capability, and 3.1 °C/W thermal resistance-making it the only choice for safety-critical, thermally dense, and assembly-cost-sensitive industrial power stages.

Availability

IRFI540G is available at Aetrix Electronics and suitable for AC-DC power supplies, industrial motor drives, and uninterruptible power systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from qualified Vishay manufacturing sites.

Supply support for IRFI540G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFI540G belongs to Vishay's isolated TO-220 FULLPAK power MOSFET family, engineered specifically for safety-critical AC/DC conversion and motor control where creepage, thermal density, and avalanche ruggedness are system-level constraints.

FAQ

What is the maximum continuous drain current for IRFI540G at 100 °C case temperature?

The IRFI540G supports 12 A continuous drain current at T_C = 100 °C, per its linear derating factor of 0.32 W/°C from 48 W at 25 °C. This rating assumes proper heatsinking and accounts for R_DS(on) increase with temperature-verified in Fig. 9 of Vishay Document 91144. The IRFI540G maintains safe operation without exceeding 175 °C junction limit under these conditions.

Does IRFI540G require an insulating pad when mounted to a heatsink?

No, the IRFI540G does not require an insulating pad because its TO-220 FULLPAK package features a fully isolated metal tab rated for 2.5 kV_RMS isolation at 60 Hz for 60 seconds. The molding compound provides dielectric strength equivalent to a 100 µm mica barrier, enabling direct clip or screw mounting to grounded heatsinks-confirmed in the "DESCRIPTION" section of Vishay Document 91144.

What is the gate threshold voltage range for IRFI540G?

The IRFI540G has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 µA, per the "SPECIFICATIONS" table in Vishay Document 91144. This standard-level threshold requires ≥10 V gate drive for full enhancement, distinguishing it from logic-level MOSFETs and ensuring noise immunity in industrial environments.

Can IRFI540G be used in avalanche mode repeatedly?

The IRFI540G is rated for repetitive avalanche current (I_AR) of 17 A and repetitive avalanche energy (E_AR) of 4.8 mJ, as specified in its Absolute Maximum Ratings table. These values assume pulse width and duty cycle limits defined in Note 'a' (pulse width limited by max junction temperature). For reliable repetitive operation, thermal design must ensure TJ remains ≤175 °C-verified via transient impedance curves in Fig. 11.

What is the drain-to-sink capacitance of IRFI540G and why does it matter?

The IRFI540G exhibits 12 pF drain-to-sink capacitance (C) at 1 MHz, per the "SPECIFICATIONS" table. This low value minimizes capacitive coupling between high-voltage drain and grounded heatsink, reducing common-mode EMI in switch-mode power supplies and improving EMC compliance-especially critical in medical and industrial equipment meeting CISPR 32 Class B limits.

IRFI540G Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack, Isolated Tab

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 77mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 72 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 48W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

IRFI540G FAQ

1.How can I place an order for IRFI540G through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFI540G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFI540G reliable?

The price and inventory of IRFI540G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFI540G is usually 5 days.

3.What payment methods are accepted for IRFI540G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFI540G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFI540G?

IRFI540G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFI540G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFI540G?

For technical support, including IRFI540G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFI540G requirements.

6.How does Aetrix verify that IRFI540G is sourced from the original manufacturer or authorized distributors?

All IRFI540G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFI540G meets industry standards.

7.What is the process for return or replacement of IRFI540G?

All IRFI540G units undergo pre-shipment inspection (PSI). If there is an issue with IRFI540G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFI540G part is unused and in its original packaging.

Return procedure for IRFI540G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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