Vishay Siliconix IRFI614GPBF

Overview

IRFI614GPBF from Vishay Siliconix is a 250 V, 2.1 A N-channel power MOSFET in TO-220 FULLPAK package with 2.0 Ω R_DS(on) at V_GS = 10 V, 2.5 kV_RMS isolation rating, and 8.2 nC total gate charge-designed for isolated high-voltage switching in AC-DC adapters, industrial power supplies, and solid-state relays.

For engineers reviewing the IRFI614GPBF datasheet, IRFI614GPBF pinout, IRFI614GPBF application, or IRFI614GPBF equivalent, this device delivers verified high-voltage isolation, low thermal resistance (5.5 °C/W junction-to-case), and rugged unclamped inductive switching capability (61 mJ E_AS)-critical for reliable operation in mains-referenced circuits requiring creepage >4.8 mm and reinforced insulation.

Technical Context

This third-generation silicon-based N-channel MOSFET employs planar V-groove technology optimized for fast switching and avalanche ruggedness. Its isolated TO-220 FULLPAK package integrates high-dielectric molding compound enabling 2.5 kV_RMS isolation without external insulators, while internal drain/source inductances (L_D = 4.5 nH, L_S = 7.5 nH) are tightly controlled to support clean turn-on/turn-off waveforms.

The device features a gate threshold voltage range of 2.0–4.0 V, body diode reverse recovery time of 190–390 ns, and dynamic dV/dt rating of 2.0 V/ns-making it suitable for hard-switched topologies where diode commutation and voltage transient immunity are critical design constraints.

Key Specifications

Pinout & Package

IRFI614GPBF uses the TO-220 FULLPAK package: isolated plastic housing with integral heatsink tab (drain-connected), 3-pin vertical lead configuration, and 4.8 mm sink-to-lead creepage distance. The molded case provides 2.5 kV_RMS isolation between drain and source/gate terminals for 60 s at 60 Hz.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage isolated MOSFET applications.

Compared with STP2NK25Z and FQP27P06, the IRFI614GPBF uniquely combines 250 V rating, 2.5 kV_RMS isolation, and TO-220 FULLPAK packaging-enabling simplified, safety-certifiable designs where component-level insulation is mandatory.

Availability

IRFI614GPBF is available at Aetrix Electronics and suitable for AC-DC power adapters, industrial motor starters, and medical isolated power supplies requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from Vishay-authorized channels.

Supply support for IRFI614GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-voltage, and thermally optimized devices.

The IRFI614GPBF belongs to Vishay's isolated power MOSFET product line, engineered specifically for safety-critical, mains-connected applications where reinforced insulation, creepage compliance, and avalanche ruggedness are mandatory design requirements.

FAQ

What is the maximum continuous drain current for IRFI614GPBF at 100 °C case temperature?

The IRFI614GPBF supports 1.3 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220 FULLPAK package under sustained high-temperature operation and must be applied in enclosed or convection-limited environments where heatsink temperature exceeds 25 °C. Designers should verify junction temperature using R_thJC = 5.5 °C/W and actual power dissipation.

Does IRFI614GPBF have a built-in body diode, and what are its key parameters?

Yes, the IRFI614GPBF integrates a monolithic body diode with typical forward voltage of 2.0 V at I_S = 2.1 A and T_J = 25 °C. Its reverse recovery time ranges from 190 ns to 390 ns, and reverse recovery charge is 0.64–1.3 μC under standardized test conditions (I_F = 2.7 A, dI/dt = 100 A/μs). These values directly impact switching losses and EMI in hard-commutated circuits.

Can IRFI614GPBF be used as a direct replacement for standard TO-220 MOSFETs without layout changes?

No-IRFI614GPBF uses the TO-220 FULLPAK package where the metal tab is internally connected to the drain and electrically isolated from leads. Unlike standard TO-220, it requires no external insulator but mandates isolation of the heatsink from system ground. PCB footprint matches TO-220, but thermal mounting and grounding strategy must be redesigned to maintain safety isolation.

What is the significance of the 2.5 kV_RMS isolation rating for IRFI614GPBF?

The 2.5 kV_RMS isolation rating certifies that IRFI614GPBF withstands 60-second AC voltage stress between drain and source/gate terminals at 60 Hz-meeting reinforced insulation requirements per IEC 62368-1 and IEC 60950-1. This eliminates need for external insulation hardware in primary-side switching applications and simplifies safety certification for end equipment.

How does the gate charge profile of IRFI614GPBF affect driver selection?

The IRFI614GPBF has Q_g = 8.2 nC, Q_gs = 1.8 nC, and Q_gd = 4.5 nC, indicating significant Miller charge region. Drivers must deliver ≥10 V with peak current >1 A to achieve sub-20 ns switching times; insufficient drive causes prolonged Miller plateau and increased switching losses. Gate resistor selection must balance EMI and shoot-through risk in half-bridge configurations.