Vishay Siliconix IRFI620G
- Part No.:
- IRFI620G
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack, Isolated Tab
- Datasheet:
-
IRFI620G.pdf
- Description:
- MOSFET N-CH 200V 4.1A TO220-3
- Quantity:
- Payment:

- Shipping:

Inventory:8,490
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Product details
Overview
IRFI620G from Vishay Siliconix is a 200 V, 4.1 A N-channel power MOSFET in TO-220 FULLPAK package with isolated tab, 0.80 Ω RDS(on) at VGS = 10 V, 14 nC total gate charge, and 2.5 kVRMS isolation rating - used in AC-DC flyback SMPS primary switches requiring reinforced insulation and simplified heatsinking.
For engineers reviewing the IRFI620G datasheet, IRFI620G pinout, IRFI620G application, or IRFI620G equivalent, this page delivers verified electrical specs, thermal performance data, isolation-critical mounting guidance, and direct alternatives for high-voltage industrial power conversion designs.
Technical Context
The IRFI620G is a third-generation planar VDMOS device optimized for hard-switched, medium-power applications up to 100 W. Its isolated TO-220 FULLPAK package integrates a 4.8 mm creepage distance and 2.5 kVRMS isolation, eliminating external insulators in commercial-industrial SMPS.
It features dynamic dV/dt immunity (5.0 V/ns), low RthJC of 4.1 °C/W, and avalanche-rated operation (EAS = 100 mJ), supporting unclamped inductive switching in offline converters without snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - supports 170 VAC mains input with 30% margin for surge and ripple. |
| RDS(on) | 0.80 Ω @ VGS = 10 V - enables <1.5 W conduction loss at 4.1 A DC, suitable for continuous-duty flyback primaries. |
| Qg | 14 nC - determines gate drive power requirement; compatible with standard 1 A peak drivers like UCC27531. |
| EAS | 100 mJ - allows safe single-pulse energy absorption during transformer reset or output short events. |
| RthJC | 4.1 °C/W - enables 30 W dissipation with ≤123 °C junction rise over 25 °C case, simplifying heatsink sizing. |
| dV/dt Rating | 5.0 V/ns - ensures robustness against parasitic ringing in high-frequency, high-dV/dt switching nodes. |
| ID (TC = 100 °C) | 2.6 A - defines usable current derating in enclosed, thermally constrained environments. |
Pinout & Package
TO-220 FULLPAK package with electrically isolated metal tab (drain-connected), 3-pin through-hole configuration, 4.8 mm minimum creepage between drain and source/ground terminals, and 2.5 kVRMS isolation per 60 s test at 60 Hz.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level drive; requires <14 nC charge for full enhancement; sensitive to ESD (±20 V max). |
| D (Drain) | Main high-side power terminal | Connected to transformer primary and high-voltage rail; electrically isolated from tab but thermally bonded to it. |
| S (Source) | Power return and reference node | Provides ground reference for gate drive; carries full load current; must be routed with low inductance (<7.5 nH internal LS). |
Key Features
| Feature | Design Value |
|---|---|
| Isolated TO-220 FULLPAK | Eliminates mica washers and insulating sleeves - reduces assembly steps and thermal interface resistance by ~30% vs. standard TO-220. |
| 2.5 kVRMS isolation | Meets reinforced insulation requirements per IEC 60950-1 and IEC 62368-1 for primary-to-secondary barrier in Class II power supplies. |
| Low RthJC (4.1 °C/W) | Enables direct clip-mounting to heatsinks without thermal paste degradation concerns under cyclic thermal stress. |
| Avalanche-rated (EAS = 100 mJ) | Supports reliable operation in unclamped inductive switching without external snubbers in cost-sensitive flyback topologies. |
| Dynamic dV/dt immunity (5.0 V/ns) | Prevents false turn-on during fast voltage transients on drain node - critical for stable operation in high-frequency SMPS. |
Applications
| AC-DC Flyback Converter | Industrial LED Driver |
|---|---|
Use Scenario: Primary-side switch in universal-input (85–265 VAC) offline flyback converters delivering 12–24 V at up to 5 A. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via transformer primary winding; operates at 65–130 kHz. Use Value: Isolated tab enables direct heatsink mounting without insulation hardware, reducing BOM count and thermal resistance by 2.1 °C/W vs. non-isolated TO-220. | Use Scenario: Constant-current switch in isolated LED drivers for street lighting and high-bay fixtures operating from 230 VAC mains. IC Role / Device Role / Timing Role: Primary-side MOSFET regulating LED string current via secondary feedback; handles repetitive 200 V spikes during demagnetization. Use Value: 100 mJ avalanche energy rating absorbs transformer leakage energy without clamping circuits, lowering system cost and component count. |
| UPS Inverter Stage | DC-DC Boost Pre-regulator |
Use Scenario: Low-frequency (50/60 Hz) H-bridge switch in line-interactive UPS inverters converting 24–48 VDC battery to 120/230 VAC output. IC Role / Device Role / Timing Role: High-side switch in half-bridge topology; conducts 4.1 A RMS with 100% duty cycle capability at TC ≤ 100 °C. Use Value: 2.6 A continuous current at 100 °C case temperature ensures thermal headroom in fanless enclosures with ambient up to 70 °C. | Use Scenario: Boost switch in PFC front-end stages for industrial motor drives accepting 3-phase 400 VAC input. IC Role / Device Role / Timing Role: Fast-switching boost transistor operating at 25–50 kHz; sustains 200 V blocking during off-state. Use Value: 5.0 V/ns dV/dt rating prevents spurious turn-on from bus transients, improving reliability in noisy factory environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM20 | 200 V, 20 A, RDS(on) = 0.22 Ω, non-isolated TO-220, no avalanche rating | Higher current, lower RDS(on), but requires external isolation hardware and lacks EAS spec | Select when higher efficiency at >3 A is critical and isolation can be added externally. |
| FQP20N20 | 200 V, 20 A, RDS(on) = 0.22 Ω, non-isolated TO-220, EAS = 75 mJ | Higher current and similar avalanche rating, but no isolation - needs mica washer + thermal pad | Choose for cost-sensitive designs where board space allows added insulation layers. |
Compared with STP20NM20 and FQP20N20, the IRFI620G trades off current rating (4.1 A vs. 20 A) and on-resistance (0.80 Ω vs. 0.22 Ω) for integrated 2.5 kVRMS isolation and guaranteed 100 mJ avalanche energy - making it optimal for compact, insulated, low-component-count flyback and LED driver designs.
Availability
IRFI620G is available at Aetrix Electronics and suitable for AC-DC flyback converters, industrial LED drivers, and UPS inverter stages requiring stable component supply, long-term lifecycle support, and certified isolation compliance.
Supply support for IRFI620G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.
The IRFI620G belongs to Vishay's isolated high-voltage power MOSFET product line, engineered specifically for cost-effective, safety-compliant offline power conversion in commercial and industrial equipment.
FAQ
What is the maximum continuous drain current for IRFI620G at 100 °C case temperature?
The IRFI620G supports 2.6 A continuous drain current at TC = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220 FULLPAK package and ensures junction temperature remains within the -55 to +150 °C operating range. Designers must verify heatsink performance to maintain TC ≤ 100 °C under worst-case ambient and load conditions for the IRFI620G.
Does IRFI620G require external insulation when mounted to a heatsink?
No - the IRFI620G uses a TO-220 FULLPAK package with an electrically isolated metal tab rated for 2.5 kVRMS isolation. This eliminates the need for mica washers, silicone pads, or other insulating hardware typically required with standard TO-220 MOSFETs. The IRFI620G can be directly mounted using a single screw or clip, reducing thermal resistance and assembly complexity.
What is the avalanche energy rating of IRFI620G, and how is it applied in circuit design?
The IRFI620G is rated for 100 mJ single-pulse avalanche energy (EAS). This specification validates its ability to absorb inductive energy during unclamped switching events - such as transformer reset in flyback converters or load dump in relay drivers - without failure. Designers use this value to eliminate snubber networks in cost-sensitive, low-to-medium power applications where the IRFI620G serves as the primary energy-handling switch.
Can IRFI620G be driven directly by a microcontroller GPIO pin?
No - the IRFI620G has a gate threshold voltage range of 2.0–4.0 V and requires 10 V for full enhancement (RDS(on) = 0.80 Ω). A typical 3.3 V or 5 V GPIO cannot provide sufficient gate drive. A dedicated gate driver (e.g., TC4420 or UCC27531) is required to deliver the 14 nC total gate charge and sustain 10 V swing. Driving the IRFI620G directly risks partial turn-on, excessive conduction loss, and thermal runaway.
What is the creepage distance between drain and source terminals on IRFI620G?
The IRFI620G provides a minimum sink-to-lead creepage distance of 4.8 mm, as confirmed in its Vishay datasheet (S21-0973-Rev. C). This meets reinforced insulation requirements for basic and supplementary insulation per IEC 62368-1 and IEC 60950-1 in mains-connected equipment. The value is measured across the molded compound surface between the isolated drain tab and source lead, not through air or PCB.
IRFI620G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack, Isolated Tab
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 800mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 260 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 30W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-3
IRFI620G FAQ
1.How can I place an order for IRFI620G through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFI620G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFI620G reliable?
The price and inventory of IRFI620G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFI620G is usually 5 days.
3.What payment methods are accepted for IRFI620G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFI620G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFI620G?
IRFI620G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFI620G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFI620G?
For technical support, including IRFI620G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFI620G requirements.
6.How does Aetrix verify that IRFI620G is sourced from the original manufacturer or authorized distributors?
All IRFI620G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFI620G meets industry standards.
7.What is the process for return or replacement of IRFI620G?
All IRFI620G units undergo pre-shipment inspection (PSI). If there is an issue with IRFI620G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFI620G part is unused and in its original packaging.
Return procedure for IRFI620G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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