Vishay Siliconix IRFI624GPBF
- Part No.:
- IRFI624GPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack, Isolated Tab
- Datasheet:
-
IRFI624GPBF.pdf
- Description:
- MOSFET N-CH 250V 3.4A TO220-3
- Quantity:
- Payment:

- Shipping:

Inventory:9,679
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Product details
Overview
IRFI624GPBF from Vishay Siliconix is a 250 V, 3.4 A N-channel power MOSFET in TO-220 FULLPAK isolated package, featuring 1.1 Ω RDS(on) at VGS = 10 V, 14 nC total gate charge, and 2.5 kVRMS isolation rating. It serves as a robust switching element in offline AC-DC power supplies, motor control circuits, and industrial DC-DC converters where high-voltage isolation and thermal reliability are critical.
For engineers reviewing the IRFI624GPBF datasheet, IRFI624GPBF pinout, IRFI624GPBF application, or IRFI624GPBF equivalent, key selection considerations include its isolated TO-220 FULLPAK mechanical design, avalanche-rated operation (100 mJ single-pulse), body diode recovery performance (trr ≤ 400 ns), and compatibility with standard heatsink mounting using a single screw or clip.
Technical Context
This third-generation power MOSFET uses planar silicon technology optimized for fast switching and ruggedized avalanche performance. Its isolated TO-220 FULLPAK construction integrates a molded compound providing 2.5 kVRMS insulation and 4.1 °C/W junction-to-case thermal resistance - equivalent to a 100 µm mica barrier on standard TO-220.
The device supports unclamped inductive switching with repetitive avalanche current up to 3.4 A and exhibits dynamic dV/dt immunity of 4.8 V/ns. Gate threshold voltage ranges from 2.0 V to 4.0 V, and its body diode delivers 3.4 A continuous forward current with VSD ≤ 1.8 V at 2.1 A and 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 250 V - Withstands mains-referenced DC bus voltages in 230 VAC offline applications without derating. |
| RDS(on) @ VGS = 10 V | 1.1 Ω - Enables low conduction loss in <5 W auxiliary supplies and low-current SMPS stages. |
| Qg | 14 nC - Determines gate drive power requirement; compatible with standard 1–2 A peak gate drivers. |
| EAS | 100 mJ - Supports reliable unclamped inductive turn-off in relay drivers and solenoid controls. |
| RthJC | 4.1 °C/W - Allows direct heatsink mounting with predictable thermal rise under 30 W dissipation. |
| Isolation Voltage | 2.5 kVRMS, 60 s - Eliminates need for external insulating hardware in commercial/industrial enclosures. |
| trr / Qrr | 200–400 ns / 0.95–1.9 µC - Limits reverse recovery losses in hard-switched flyback and buck converters. |
Pinout & Package
IRFI624GPBF is housed in a TO-220 FULLPAK package with electrically isolated metal tab (drain-connected), enabling direct heatsink mounting without insulating washers. The package provides 4.8 mm creepage distance from sink to lead and meets RoHS-compliant lead-free termination requirements.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Controls channel conduction; requires ≥10 V for full enhancement; threshold range 2.0–4.0 V. |
| D | Drain | High-side switch node; internally connected to isolated metal tab for heatsink interface. |
| S | Source | Power return path; referenced to driver ground; forms common node with body diode cathode. |
Key Features
| Feature | Design Value |
|---|---|
| Electrically isolated package | 2.5 kVRMS isolation enables direct heatsink mounting without mica or silicone pads in Class I equipment. |
| Avalanche energy rating | 100 mJ single-pulse EAS allows safe operation under inductive load switching without snubbers. |
| Low gate charge | 14 nC Qg reduces driver power loss and simplifies gate drive design in high-frequency SMPS. |
| Body diode performance | trr ≤ 400 ns and Qrr ≤ 1.9 µC minimize switching losses in synchronous rectification and freewheeling paths. |
| Thermal efficiency | 4.1 °C/W RthJC ensures stable junction temperature rise below 150 °C at 2.2 A continuous drain current. |
Applications
| AC-DC Auxiliary Power Supply | Industrial Relay Driver |
|---|---|
Use Scenario: Provides primary-side switching in <10 W standby power supplies for industrial PLCs and HMI panels. IC Role / Device Role / Timing Role: N-channel high-side switch controlling transformer primary winding during discontinuous conduction mode. Use Value: Isolated TO-220 FULLPAK eliminates insulation hardware; 250 V rating supports universal input (85–265 VAC) designs. | Use Scenario: Drives 24 VDC industrial relays in programmable logic controller output modules. IC Role / Device Role / Timing Role: Low-duty-cycle, high-voltage switch handling inductive kickback during coil de-energization. Use Value: 100 mJ EAS absorbs relay coil energy without external clamping; 2.5 kVRMS isolation protects control logic from transients. |
| DC-DC Buck Converter | Motor Control H-Bridge Leg |
Use Scenario: High-side switch in 12 V input, 3.3 V/2 A point-of-load converter for embedded controllers. IC Role / Device Role / Timing Role: Synchronous rectifier replacement in low-power buck topology operating at 300–500 kHz. Use Value: 1.1 Ω RDS(on) limits conduction loss to <75 mW at 2 A; fast trr minimizes shoot-through risk. | Use Scenario: Low-side switch in half-bridge motor driver for 24 V brushed DC motors in factory automation. IC Role / Device Role / Timing Role: PWM-controlled power stage element delivering bidirectional current to motor windings. Use Value: 3.4 A continuous ID supports 10 W motor loads; 4.8 V/ns dV/dt rating prevents false turn-on in noisy EMI environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP2NK60ZFP | 600 V VDS, 1.2 Ω RDS(on), TO-220FP package (non-isolated) | Higher voltage rating suits 400 VDC bus designs; lacks 2.5 kV isolation | Select when higher blocking voltage is required and external isolation is acceptable. |
| IRFIB7N50KPBF | 500 V VDS, 1.4 Ω RDS(on), TO-220 FULLPAK (isolated) | Same isolated package; higher voltage but higher on-resistance and gate charge | Choose for 500 V applications needing identical mechanical fit and isolation, accepting reduced efficiency. |
Compared with STP2NK60ZFP and IRFIB7N50KPBF, the IRFI624GPBF offers optimal balance of 250 V rating, low RDS(on), and integrated isolation - making it uniquely suited for cost-sensitive, space-constrained 230 VAC-fed auxiliary supplies where board-level insulation must be minimized.
Availability
IRFI624GPBF is available at Aetrix Electronics and suitable for AC-DC auxiliary power supplies, industrial relay drivers, and low-power DC-DC converters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for IRFI624GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal performance, and application-specific packaging.
The IRFI624GPBF belongs to Vishay's third-generation isolated power MOSFET product line, engineered specifically for commercial and industrial power conversion systems where electrical isolation, avalanche ruggedness, and simplified thermal management are design priorities.
FAQ
What is the maximum continuous drain current for IRFI624GPBF at 100 °C case temperature?
The IRFI624GPBF supports 2.2 A continuous drain current at TC = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220 FULLPAK package and ensures junction temperature remains within the -55 °C to +150 °C operating range. Designers must verify heatsink sizing and ambient conditions to maintain this current rating in real-world operation. The IRFI624GPBF datasheet confirms this value under Note "a" referencing pulse width limitation by maximum junction temperature.
Does IRFI624GPBF have a built-in body diode, and what are its key parameters?
Yes, the IRFI624GPBF integrates a parasitic body diode inherent to its N-channel MOSFET structure. Key parameters include 3.4 A continuous source-drain current (IS), 14 A pulsed rating (ISM), 1.8 V forward voltage (VSD) at 2.1 A and 25 °C, and reverse recovery time (trr) between 200 ns and 400 ns. These values are measured per the test conditions in the Vishay datasheet Document Number 91147, confirming suitability for freewheeling and synchronous rectification roles.
Can IRFI624GPBF be used as a direct replacement for IRFI624G in existing designs?
Yes, IRFI624GPBF is the lead-free (RoHS-compliant) version of IRFI624G and shares identical electrical specifications, thermal characteristics, and mechanical dimensions. The "PbF" suffix denotes lead-free terminations, while both parts use the same TO-220 FULLPAK isolated package. No layout or thermal redesign is needed when upgrading from IRFI624G to IRFI624GPBF, provided soldering profiles comply with lead-free reflow requirements.
What is the significance of the 2.5 kVRMS isolation rating for IRFI624GPBF?
The 2.5 kVRMS isolation rating means the IRFI624GPBF's molded package withstands 2.5 kV AC for 60 seconds at 60 Hz between drain (tab) and leads, eliminating the need for external insulating hardware like mica washers or silicone pads. This rating directly enables simplified mechanical assembly in Class I appliances and industrial controls, reducing BOM cost and improving thermal contact to heatsinks. The IRFI624GPBF achieves this via proprietary molding compound, not external barriers.
How does the gate charge profile of IRFI624GPBF affect driver selection?
The IRFI624GPBF has a total gate charge (Qg) of 14 nC, with Qgs = 2.7 nC and Qgd = 7.8 nC. This profile indicates moderate drive strength requirements: a typical 1 A peak gate driver can switch the IRFI624GPBF in ~14 ns, while 2 A drivers achieve sub-7 ns turn-on. Designers should size gate resistors to control dV/dt and avoid oscillation, especially given the IRFI624GPBF's 4.8 V/ns rated dV/dt immunity. The datasheet Fig. 6 provides the full VGS-vs-Q curve for precise modeling.
IRFI624GPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack, Isolated Tab
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.1Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 260 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 30W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-3
IRFI624GPBF FAQ
1.How can I place an order for IRFI624GPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFI624GPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFI624GPBF reliable?
The price and inventory of IRFI624GPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFI624GPBF is usually 5 days.
3.What payment methods are accepted for IRFI624GPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFI624GPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFI624GPBF?
IRFI624GPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFI624GPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFI624GPBF?
For technical support, including IRFI624GPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFI624GPBF requirements.
6.How does Aetrix verify that IRFI624GPBF is sourced from the original manufacturer or authorized distributors?
All IRFI624GPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFI624GPBF meets industry standards.
7.What is the process for return or replacement of IRFI624GPBF?
All IRFI624GPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFI624GPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFI624GPBF part is unused and in its original packaging.
Return procedure for IRFI624GPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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