Vishay Siliconix IRFI630G
- Part No.:
- IRFI630G
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack, Isolated Tab
- Datasheet:
-
IRFI630G.pdf
- Description:
- MOSFET N-CH 200V 5.9A TO220-3
- Quantity:
- Payment:

- Shipping:

Inventory:3,018
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Product details
Overview
IRFI630G from Vishay Siliconix is a 200 V, 5.9 A N-channel power MOSFET in TO-220 FULLPAK package with isolated tab, 0.40 Ω RDS(on) at VGS = 10 V, 43 nC total gate charge, and 2.5 kVRMS isolation - used in offline SMPS primary-side switching and industrial motor control.
For engineers reviewing the IRFI630G datasheet, IRFI630G pinout, IRFI630G application, or IRFI630G equivalent, this page delivers verified electrical specs, thermal performance, avalanche capability, isolation rating, and real-world design context for high-voltage DC-DC and AC-DC converter implementations.
Technical Context
This third-generation power MOSFET uses planar V-groove technology to achieve rugged unclamped inductive switching (230 mJ single-pulse EAS) and stable dynamic dV/dt immunity (5.0 V/ns). Its isolated TO-220 FULLPAK package integrates a thermally efficient molding compound enabling direct heatsink mounting without mica washers.
The device features low gate charge (Qg = 43 nC) and fast switching (td(on) = 9.4 ns, tf = 20 ns), optimized for hard-switched flyback and forward converters operating up to 100 kHz. Body diode recovery (trr = 170–340 ns, Qrr = 1.1–2.2 μC) supports moderate-frequency synchronous rectification where external diode replacement is considered.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - supports 170 VAC mains input with 2× safety margin in offline converters |
| RDS(on) | 0.40 Ω @ VGS = 10 V - limits conduction loss to ≤ 1.4 W at 5.9 A continuous drain current |
| Qg | 43 nC - determines gate driver power requirement (~1.3 mW at 100 kHz, VGS swing = 10 V) |
| EAS | 230 mJ - enables reliable operation under unclamped inductive load transients without snubber |
| RthJC | 3.6 °C/W - allows 35 W dissipation with ≤ 126 °C junction rise above 25 °C case temperature |
| Isolation | 2.5 kVRMS, 60 s - eliminates need for insulating hardware in Class I AC-connected equipment |
| trr | 170–340 ns - defines minimum dead time required to prevent shoot-through in half-bridge topologies |
Pinout & Package
IRFI630G uses the TO-220 FULLPAK package: isolated metal tab (drain), 3-pin through-hole outline (12.9–13.3 mm length, 10.0–10.3 mm width, 4.6–4.8 mm thickness), with creepage distance ≥ 4.8 mm between sink and leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Accepts 10 V logic-level drive; threshold voltage 2.0–4.0 V ensures turn-on stability across temperature |
| D (Drain) | High-side power node | Connected to isolated tab; rated for 200 V blocking and 24 A pulsed current |
| S (Source) | Power return / reference | Common node for gate drive return and current sensing; body diode anode |
Key Features
| Feature | Design Value |
|---|---|
| Isolated TO-220 FULLPAK | Eliminates mica insulator and shoulder washer - reduces thermal resistance by ~25% vs. standard TO-220 |
| 2.5 kVRMS isolation | Meets reinforced insulation requirements per IEC 60950-1 and IEC 62368-1 for primary-side power switches |
| Low RthJC = 3.6 °C/W | Enables 35 W continuous dissipation with passive heatsinking in compact industrial enclosures |
| Dynamic dV/dt rating = 5.0 V/ns | Prevents false turn-on during high-slew-rate switching transitions in high-noise environments |
| Unclamped avalanche energy = 230 mJ | Supports robust operation in transformer leakage inductance clamp circuits without external TVS |
Applications
| Industrial Motor Drives | Offline SMPS Primary Switch |
|---|---|
Use Scenario: Half-bridge inverter stage for 100–500 W brushless DC motor controllers in HVAC blowers and pumps. IC Role / Device Role / Timing Role: High-side N-channel switch controlling phase voltage; body diode handles freewheeling current during PWM off-time. Use Value: 230 mJ avalanche rating absorbs inductive kickback during fault conditions; 5.0 V/ns dV/dt immunity prevents spurious turn-on during bus ringing. | Use Scenario: Primary-side switch in 65–150 W universal-input flyback converter for LED drivers and industrial power supplies. IC Role / Device Role / Timing Role: Main power switch turning on/off 50–100 kHz square wave across transformer primary. Use Value: 2.5 kVRMS isolation eliminates need for insulating hardware; 0.40 Ω RDS(on) keeps conduction loss below 1.5 W at full load. |
| AC-DC Adapter Protection | DC-DC Converter Input Stage |
Use Scenario: Overvoltage crowbar circuit triggered by transient suppressor in 120/230 VAC input front-end of medical-grade adapters. IC Role / Device Role / Timing Role: Fast-acting shunt switch clamping line-to-ground during surge events exceeding 200 V. Use Value: 24 A pulsed drain current and 230 mJ avalanche energy sustain single-event surges without failure. | Use Scenario: Input switch in 24–48 V input, 12 V output isolated forward converter for telecom shelf power. IC Role / Device Role / Timing Role: Synchronous rectifier replacement for secondary-side Schottky; body diode conducts during dead time. Use Value: 170–340 ns reverse recovery time sets minimum dead time; low Qrr (1.1–2.2 μC) reduces switching loss in synchronous mode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM50FP | 500 V VDS, 0.23 Ω RDS(on), TO-220FP (non-isolated), no certified isolation rating | Higher voltage headroom but requires external insulator; unsuitable for reinforced insulation designs | Select when higher blocking voltage is needed and isolation hardware can be added |
| FQP20N06L | 60 V VDS, 0.06 Ω RDS(on), logic-level gate (VGS(th) = 1–2.5 V), TO-220 (non-isolated) | Lower voltage rating; optimized for 12–24 V systems; not suitable for AC-line applications | Select only for low-voltage DC-DC where isolation and 200 V rating are unnecessary |
Compared with STP20NM50FP and FQP20N06L, the IRFI630G uniquely combines 200 V rating, certified 2.5 kVRMS isolation, and rugged avalanche performance - making it irreplaceable in safety-critical AC-input power stages where board-level insulation must be minimized.
Availability
IRFI630G is available at Aetrix Electronics and suitable for industrial motor drives, offline SMPS primary switching, AC-DC adapter protection, and DC-DC converter input stages requiring stable component supply and long-term lifecycle support.
Supply support for IRFI630G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.
The IRFI630G belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for ruggedness and efficiency in AC-line-connected power conversion systems where isolation, avalanche tolerance, and thermal performance are critical.
FAQ
What is the maximum continuous drain current for IRFI630G at 100 °C case temperature?
The IRFI630G supports 3.7 A continuous drain current at TC = 100 °C, derated linearly from 5.9 A at 25 °C using a 0.28 W/°C factor. This value reflects thermal limits of the TO-220 FULLPAK package and must be validated against actual heatsink performance and ambient conditions in the final layout. The IRFI630G datasheet specifies this limit in Absolute Maximum Ratings Table.
Does IRFI630G require a gate resistor for safe operation?
Yes, IRFI630G requires an external gate resistor to control switching speed and suppress oscillation. A typical value is 12–25 Ω, as used in the datasheet's switching time test circuit (Fig. 10a). This resistor damps gate loop inductance and limits peak gate current; omitting it risks overshoot, ringing, or false turn-on due to the device's 43 nC gate charge and low gate input resistance (0.6–3.3 Ω).
Can IRFI630G be used as a direct replacement for IRF630 in existing designs?
No - IRFI630G is not a drop-in replacement for IRF630. While both share VDS = 200 V and similar RDS(on), the IRFI630G uses an isolated TO-220 FULLPAK package (drain-connected tab), whereas IRF630 uses standard non-isolated TO-220. Substituting IRFI630G requires mechanical redesign to accommodate isolation and revised heatsink mounting - no PCB changes are sufficient.
What is the body diode forward voltage of IRFI630G at 5.9 A and 25 °C?
The body diode forward voltage (VSD) of IRFI630G is 2.0 V maximum at IS = 5.9 A, TJ = 25 °C, and VGS = 0 V. This parameter is specified in the "Drain-Source Body Diode Characteristics" table and impacts conduction loss during freewheeling intervals in bridge configurations. The IRFI630G body diode exhibits soft recovery behavior, with Qrr = 1.1–2.2 μC.
Is IRFI630G lead (Pb)-free and RoHS compliant?
Yes, IRFI630G is lead-free and RoHS compliant, as confirmed by its ordering variant IRFI630GPbF and Vishay's material categorization documentation (www.vishay.com/doc?99912). The device meets JEDEC J-STD-609A Class 2a marking requirements and is compatible with standard Pb-free reflow profiles up to 300 °C peak for 10 seconds, per the soldering recommendations in the datasheet.
IRFI630G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack, Isolated Tab
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 400mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 43 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 800 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 35W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-3
IRFI630G FAQ
1.How can I place an order for IRFI630G through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFI630G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFI630G reliable?
The price and inventory of IRFI630G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFI630G is usually 5 days.
3.What payment methods are accepted for IRFI630G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFI630G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFI630G?
IRFI630G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFI630G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFI630G?
For technical support, including IRFI630G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFI630G requirements.
6.How does Aetrix verify that IRFI630G is sourced from the original manufacturer or authorized distributors?
All IRFI630G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFI630G meets industry standards.
7.What is the process for return or replacement of IRFI630G?
All IRFI630G units undergo pre-shipment inspection (PSI). If there is an issue with IRFI630G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFI630G part is unused and in its original packaging.
Return procedure for IRFI630G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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