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Vishay Siliconix IRFI630GPBF
- Part No.:
- IRFI630GPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack, Isolated Tab
- Datasheet:
-
IRFI630GPBF.pdf
- Description:
- MOSFET N-CH 200V 5.9A TO220-3
- Quantity:
- Payment:
- Shipping:
Inventory:1,615
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Product details
Overview
IRFI630GPBF from Vishay Siliconix is a 200 V, 5.9 A N-channel power MOSFET in TO-220 FULLPAK package with isolated tab, 0.40 Ω RDS(on) at VGS = 10 V, 43 nC total gate charge, and 2.5 kVRMS isolation rating - used in AC-DC flyback snubber circuits, DC-DC synchronous rectification, and industrial motor control drivers.
For engineers reviewing the IRFI630GPBF datasheet, IRFI630GPBF pinout, IRFI630GPBF application, or IRFI630GPBF equivalent, this page delivers verified electrical parameters, thermal performance data, isolation compliance, switching timing characteristics, and real-world design context for high-voltage discrete power switching.
Technical Context
This third-generation power MOSFET features a ruggedized planar stripe cell structure optimized for fast switching and avalanche energy handling (230 mJ single-pulse). Its isolated TO-220 FULLPAK package integrates a high-dielectric molding compound enabling 2.5 kVRMS isolation without external insulation hardware.
The device exhibits low thermal resistance (RthJC = 3.6 °C/W), dynamic dV/dt immunity (5.0 V/ns), and body diode recovery time of 170–340 ns with Qrr = 1.1–2.2 μC - supporting reliable operation in hard-switched inductive loads and unclamped inductive turn-off conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - supports primary-side switching in 115/230 VAC offline converters without derating. |
| RDS(on) | 0.40 Ω @ VGS = 10 V - enables <5 W conduction loss at 3.5 A continuous drain current. |
| Qg | 43 nC - determines gate drive power requirement and influences switching speed in 50–100 kHz SMPS designs. |
| EAS | 230 mJ - allows safe operation under unclamped inductive switching stress without external snubbers. |
| RthJC | 3.6 °C/W - permits 35 W dissipation at TC = 25 °C with minimal heatsink mass in compact industrial enclosures. |
| dV/dt | 5.0 V/ns - resists false triggering during high-slew-rate voltage transients in motor drive half-bridges. |
| ID (TC = 100 °C) | 3.7 A - defines usable current capability in thermally constrained environments like sealed power supplies. |
Pinout & Package
IRFI630GPBF uses the TO-220 FULLPAK package: isolated metal tab (drain-connected), 3-pin through-hole outline, 15.87 mm length, 10.10 mm width, 4.70 mm height, and 4.8 mm creepage distance from sink to lead. The molded isolation eliminates need for mica washers or insulating pads in heatsink mounting.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level drive; input capacitance Ciss = 800 pF affects gate driver selection and rise/fall times. |
| D (Drain) | Main power output terminal | Connected to internal die drain and isolated metal tab; rated for 200 V blocking and 24 A pulsed current. |
| S (Source) | Power return/reference node | Common reference for gate drive and load current; body diode anode tied internally to source. |
Key Features
| Feature | Design Value |
|---|---|
| Isolated TO-220 FULLPAK package | 2.5 kVRMS isolation (60 s, 60 Hz) replaces mica + insulator assemblies, reducing BOM count and assembly steps. |
| Low RthJC | 3.6 °C/W enables direct heatsink mounting with clip or M3 screw - no thermal interface material required for ≤35 W operation. |
| High dV/dt immunity | 5.0 V/ns rating prevents spurious turn-on during fast voltage transitions in half-bridge and LLC resonant topologies. |
| Robust avalanche capability | 230 mJ single-pulse EAS supports reliable operation in flyback snubberless designs and relay coil suppression. |
| Body diode recovery | trr = 170–340 ns with Qrr = 1.1–2.2 μC - reduces switching losses and EMI in synchronous rectifier applications. |
Applications
| AC-DC Power Supply Snubber | Industrial Motor Control Driver |
|---|---|
Use Scenario: Primary-side snubber circuit in 20–60 W offline flyback converters operating across universal AC input (85–265 VAC). IC Role / Device Role / Timing Role: High-voltage clamp switch absorbing transformer leakage energy during MOSFET turn-off. Use Value: Eliminates need for external isolation hardware while sustaining 200 V blocking and 230 mJ avalanche energy per pulse. |
Use Scenario: Low-side switch in 3-phase IGBT gate driver auxiliary supply or brake chopper stage. IC Role / Device Role / Timing Role: Fast-turning power switch controlling DC bus discharge or auxiliary rail sequencing. Use Value: 5.0 V/ns dV/dt immunity prevents false triggering during high dv/dt events in noisy motor drive environments. |
| DC-DC Synchronous Rectifier | Capacitor Discharge Circuit |
Use Scenario: Secondary-side synchronous rectifier in isolated 12 V/5 A telecom DC-DC module with 100 kHz switching frequency. IC Role / Device Role / Timing Role: Low-loss replacement for Schottky diode, driven by transformer-coupled gate signal. Use Value: Body diode trr = 170–340 ns and Qrr = 1.1–2.2 μC minimize reverse recovery losses and associated EMI. |
Use Scenario: Controlled discharge path for high-energy storage capacitors (≥1000 μF, 200 V) in industrial test equipment safety interlocks. IC Role / Device Role / Timing Role: High-reliability, isolated power switch initiating controlled capacitor energy dump on fault detection. Use Value: Isolated tab ensures operator safety during maintenance; 2.5 kVRMS isolation meets IEC 61000-4-5 surge requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM50FP | 500 V VDS, 0.27 Ω RDS(on), TO-220FP (non-isolated), 25 nC Qg | Higher voltage rating but lacks isolation; requires external insulator for heatsink mounting. | Preferred where higher blocking voltage is needed and isolation can be added externally. |
| FQP30N06L | 60 V VDS, 0.028 Ω RDS(on), TO-220 (non-isolated), 27 nC Qg | Lower voltage, lower RDS(on), no isolation - unsuitable for >100 V AC-line applications. | Only viable in low-voltage DC systems (<48 V); not a functional substitute for IRFI630GPBF's isolation or voltage rating. |
Compared with STP20NM50FP and FQP30N06L, IRFI630GPBF uniquely combines 200 V rating, 0.40 Ω on-resistance, and integrated 2.5 kVRMS isolation - making it irreplaceable in space-constrained, safety-critical AC-input power stages requiring no external insulation.
Availability
IRFI630GPBF is available at Aetrix Electronics and suitable for AC-DC power supplies, industrial motor control drivers, and capacitor discharge circuits requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.
Supply support for IRFI630GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.
The IRFI630GPBF belongs to Vishay's high-voltage isolated power MOSFET product line, engineered specifically for safety-critical AC-input power conversion where galvanic isolation and avalanche robustness are mandatory.
FAQ
What is the maximum continuous drain current for IRFI630GPBF at 100 °C case temperature?
The IRFI630GPBF supports 3.7 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations of the TO-220 FULLPAK package and must be applied when ambient or heatsink conditions prevent maintaining TC ≤ 25 °C. Designers should verify junction temperature using RthJC = 3.6 °C/W and actual power dissipation in their layout.
Does IRFI630GPBF require external insulation when mounted to a heatsink?
No, IRFI630GPBF does not require external insulation when mounted to a heatsink. Its TO-220 FULLPAK package provides 2.5 kVRMS isolation between the drain-connected tab and leads, eliminating the need for mica washers or insulating pads. Mounting is simplified using a single M3 screw or clip, with creepage distance of 4.8 mm meeting basic insulation requirements per IEC 60950-1.
What is the gate threshold voltage range for IRFI630GPBF?
The gate-source threshold voltage (VGS(th)) for IRFI630GPBF is specified from 2.0 V to 4.0 V at VDS = VGS and ID = 250 μA. This range confirms compatibility with standard 10 V gate drive circuits, though designers must ensure gate voltage exceeds 4.0 V to guarantee full enhancement and low RDS(on). It is not a logic-level MOSFET and requires dedicated gate driver voltage above 5 V.
Can IRFI630GPBF be used in avalanche mode repeatedly?
IRFI630GPBF supports repetitive avalanche operation up to 5.9 A (IAR) and 3.5 mJ (EAR) per pulse, provided pulse width and duty cycle remain within limits defined in Figure 11 and Note a. However, repeated avalanche stresses accelerate wear-out; Vishay recommends designing for clamped inductive switching or using external snubbers for long-term reliability. The 230 mJ single-pulse rating is for non-repetitive fault protection only.
What is the body diode forward voltage of IRFI630GPBF at 5.9 A?
The body diode forward voltage (VSD) of IRFI630GPBF is rated at ≤2.0 V at IS = 5.9 A, TJ = 25 °C, and VGS = 0 V. This parameter directly impacts conduction loss during freewheeling intervals in buck or flyback topologies. At elevated temperatures, VSD decreases slightly due to negative temperature coefficient, but designers should verify worst-case drop using typical curves in Figure 7 of the datasheet.
IRFI630GPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack, Isolated Tab
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 400mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 43 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 800 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 35W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-3
IRFI630GPBF FAQ
1.How can I place an order for IRFI630GPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFI630GPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFI630GPBF reliable?
The price and inventory of IRFI630GPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFI630GPBF is usually 5 days.
3.What payment methods are accepted for IRFI630GPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFI630GPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFI630GPBF?
IRFI630GPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFI630GPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFI630GPBF?
For technical support, including IRFI630GPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFI630GPBF requirements.
6.How does Aetrix verify that IRFI630GPBF is sourced from the original manufacturer or authorized distributors?
All IRFI630GPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFI630GPBF meets industry standards.
7.What is the process for return or replacement of IRFI630GPBF?
All IRFI630GPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFI630GPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFI630GPBF part is unused and in its original packaging.
Return procedure for IRFI630GPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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