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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFI640G

Name: IRFI640G
Brand: Vishay Siliconix
SKU: IRFI640G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFI640G

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack, Isolated Tab

Datasheet:: IRFI640G.pdf

Description:: MOSFET N-CH 200V 9.8A TO220-3

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Product details

Overview

IRFI640G from Vishay Siliconix is a 200 V, 9.8 A N-channel power MOSFET in TO-220 FULLPAK package with isolated tab, 0.18 Ω R_DS(on) at V_GS = 10 V, and 2.5 kV_RMS isolation rating-designed for high-voltage DC-DC converters, motor drive half-bridges, and industrial SMPS where galvanic isolation and rugged avalanche capability are required.

For engineers reviewing the IRFI640G datasheet, IRFI640G pinout, IRFI640G application, or IRFI640G equivalent, this device delivers verified 430 mJ single-pulse avalanche energy, 5.0 V/ns peak diode recovery dV/dt, and low 3.1 °C/W junction-to-case thermal resistance-critical for thermally constrained high-reliability power stages.

Technical Context

The IRFI640G employs third-generation silicon process optimized for fast switching and ruggedized avalanche performance. Its isolated TO-220 FULLPAK construction eliminates external insulators while maintaining 4.8 mm sink-to-lead creepage distance and 2.5 kV_RMS isolation-enabling direct heatsink mounting without mica washers.

It features low gate charge (70 nC total, 39 nC Q_gd) and dynamic dV/dt immunity up to 5.0 V/ns, supporting stable operation in hard-switched topologies. The integrated body diode exhibits 300–610 ns reverse recovery time and 3.4–7.1 μC Q_rr, suitable for freewheeling in inductive loads.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - supports input voltages up to 160 V DC in offline or industrial bus applications
R_DS(on)	0.18 Ω @ V_GS = 10 V - enables ≤1.05 W conduction loss at 7.6 A continuous drain current
Q_g	70 nC - determines gate driver power requirement and switching speed in hard-switched circuits
E_AS	430 mJ - withstands unclamped inductive energy spikes without failure in motor or relay drive
R_thJC	3.1 °C/W - allows 40 W power dissipation with ≤124 °C junction rise above 25 °C case temperature
dV/dt	5.0 V/ns - ensures robustness against parasitic turn-on during high-speed voltage transients
I_D (T_C = 100 °C)	6.2 A - defines maximum continuous current under real-world heatsink-limited thermal conditions

Pinout & Package

IRFI640G uses the TO-220 FULLPAK package with electrically isolated metal tab (drain-connected), enabling direct heatsink mounting without insulation hardware. Package dimensions conform to Vishay specification 91359 (Option 1 or 2), with 4.8 mm minimum creepage between sink and leads.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires 10 V drive for full enhancement; ±20 V absolute max rating
D	Drain	High-side switch node; internally connected to isolated tab; rated for 200 V blocking
S	Source	Power return path; referenced to control ground; carries full load current and body diode forward current

Key Features

Feature	Design Value
Isolated TO-220 FULLPAK	Eliminates need for mica insulator or shoulder washer-reduces assembly cost and thermal interface resistance
2.5 kV_RMS isolation	Validated 60 s withstand at 60 Hz-meets reinforced insulation requirements for industrial safety standards
430 mJ single-pulse avalanche energy	Enables reliable operation in unclamped inductive switching without external snubbers
Low R_thJC = 3.1 °C/W	Improves thermal coupling to heatsink-delivers full 40 W power rating with minimal derating
Body diode Q_rr = 3.4–7.1 μC	Reduces switching losses and EMI in synchronous rectification and freewheeling configurations

Applications

Industrial SMPS	Motor Drive Half-Bridge
Use Scenario: Primary-side switch in 100–200 V input offline flyback or forward converters powering PLC I/O modules. IC Role / Device Role / Timing Role: High-voltage power switch handling repetitive 200 V drain stress and 9.8 A peak currents. Use Value: 2.5 kV_RMS isolation and 430 mJ E_AS prevent failure during line surges and transformer leakage energy release.	Use Scenario: High-side switch in 24–48 V brushed DC motor H-bridge driving conveyor belts or actuators. IC Role / Device Role / Timing Role: Fast-turning N-channel switch controlling motor direction and braking via PWM. Use Value: 5.0 V/ns dV/dt rating prevents false turn-on during cross-conduction; low Q_g enables <100 ns switching transitions.
DC-DC Converter Stage	Inductive Load Switching
Use Scenario: Main switch in isolated 48 V–12 V bidirectional DC-DC converter for telecom power shelves. IC Role / Device Role / Timing Role: Synchronous rectifier or primary switch operating at 100–300 kHz with 160 V bus. Use Value: 0.18 Ω R_DS(on) minimizes conduction loss; TO-220 FULLPAK isolation simplifies secondary-side grounding.	Use Scenario: Solenoid or relay driver in building automation systems requiring surge-tolerant 200 V switching. IC Role / Device Role / Timing Role: Ruggedized power switch absorbing inductive kickback without clamping diodes. Use Value: Repetitive avalanche rating (I_AR = 9.8 A, E_AR = 4.0 mJ) sustains repeated coil de-energization events.

Industrial SMPS

Motor Drive Half-Bridge

Use Scenario: Primary-side switch in 100–200 V input offline flyback or forward converters powering PLC I/O modules.

IC Role / Device Role / Timing Role: High-voltage power switch handling repetitive 200 V drain stress and 9.8 A peak currents.

Use Value: 2.5 kV_RMS isolation and 430 mJ E_AS prevent failure during line surges and transformer leakage energy release.

Use Scenario: High-side switch in 24–48 V brushed DC motor H-bridge driving conveyor belts or actuators.

IC Role / Device Role / Timing Role: Fast-turning N-channel switch controlling motor direction and braking via PWM.

Use Value: 5.0 V/ns dV/dt rating prevents false turn-on during cross-conduction; low Q_g enables <100 ns switching transitions.

DC-DC Converter Stage

Inductive Load Switching

Use Scenario: Main switch in isolated 48 V–12 V bidirectional DC-DC converter for telecom power shelves.

IC Role / Device Role / Timing Role: Synchronous rectifier or primary switch operating at 100–300 kHz with 160 V bus.

Use Value: 0.18 Ω R_DS(on) minimizes conduction loss; TO-220 FULLPAK isolation simplifies secondary-side grounding.

Use Scenario: Solenoid or relay driver in building automation systems requiring surge-tolerant 200 V switching.

IC Role / Device Role / Timing Role: Ruggedized power switch absorbing inductive kickback without clamping diodes.

Use Value: Repetitive avalanche rating (I_AR = 9.8 A, E_AR = 4.0 mJ) sustains repeated coil de-energization events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM60FD	600 V V_DS, 0.32 Ω R_DS(on), D²PAK package, no isolation	Higher voltage rating but higher on-resistance and non-isolated package-requires external insulation	Select when >200 V blocking is needed and board layout accommodates insulating hardware
FQP13N20L	200 V V_DS, 0.22 Ω R_DS(on), TO-220 non-isolated, logic-level gate (2.5 V_th)	Lower gate threshold but no isolation or avalanche rating-unsuitable for unclamped inductive loads	Select only for low-side switching with logic-level drive and no isolation requirement

Compared with STP20NM60FD and FQP13N20L, the IRFI640G uniquely combines 200 V rating, 0.18 Ω on-resistance, TO-220 FULLPAK isolation, and 430 mJ avalanche energy-making it the only choice among the three for isolated high-reliability industrial switching where mechanical simplicity and surge resilience are mandatory.

Availability

IRFI640G is available at Aetrix Electronics and suitable for industrial SMPS, motor drive half-bridges, and DC-DC converter stages requiring stable component supply, long-term lifecycle support, and traceable sourcing from qualified manufacturing facilities.

Supply support for IRFI640G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFI640G belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for ruggedized switching in harsh environments-emphasizing avalanche survivability, thermal efficiency, and mechanical integration via isolated packaging.

FAQ

What is the maximum continuous drain current for IRFI640G at 100 °C case temperature?

The IRFI640G supports 6.2 A continuous drain current at T_C = 100 °C, per its Absolute Maximum Ratings table. This value reflects thermal derating from the 9.8 A rating at 25 °C, based on a linear derating factor of 0.32 W/°C and R_thJC = 3.1 °C/W. Designers must ensure heatsink design maintains case temperature ≤100 °C to sustain this current in IRFI640G-based power stages.

Does IRFI640G have an electrically isolated tab, and what is its isolation rating?

Yes, the IRFI640G features an electrically isolated metal tab (drain-connected) rated for 2.5 kV_RMS for 60 seconds at 60 Hz, as confirmed in the Features section and Absolute Maximum Ratings. This isolation eliminates the need for mica washers or insulating sleeves in TO-220 mounting-reducing thermal resistance and assembly complexity in IRFI640G implementations.

What is the typical gate charge profile of IRFI640G, and how does it affect switching performance?

The IRFI640G has a total gate charge (Q_g) of 70 nC max at V_GS = 10 V, with Q_gs = 13 nC and Q_gd = 39 nC. This distribution indicates strong Miller effect influence, requiring careful gate driver selection to minimize switching losses. In IRFI640G circuits, a 9.1 Ω gate resistor yields 14 ns turn-on delay and 51 ns rise time-key parameters for optimizing EMI and efficiency.

Can IRFI640G be used in avalanche-mode operation, and what are its rated limits?

Yes, the IRFI640G is rated for repetitive avalanche operation with I_AR = 9.8 A and E_AR = 4.0 mJ, and single-pulse avalanche energy of 430 mJ. These values are validated per test condition b (V_DD = 50 V, L = 6.7 mH, R_g = 25 Ω). Designers using IRFI640G in unclamped inductive switching must respect pulse width and duty cycle limits defined in Figure 11 and 12 to avoid junction overheating.

What is the body diode reverse recovery behavior of IRFI640G, and how does it impact freewheeling applications?

The IRFI640G body diode exhibits t_rr = 300–610 ns and Q_rr = 3.4–7.1 μC at T_J = 25 °C, IF = 18 A, and dI/dt = 100 A/μs. This relatively soft recovery reduces voltage overshoot and EMI during commutation-making IRFI640G suitable for freewheeling in motor drives and SMPS, though synchronous rectification may further improve efficiency in high-frequency designs.

IRFI640G Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack, Isolated Tab

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 9.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 5.9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 70 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 40W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

IRFI640G FAQ

1.How can I place an order for IRFI640G through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFI640G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFI640G reliable?

The price and inventory of IRFI640G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFI640G is usually 5 days.

3.What payment methods are accepted for IRFI640G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFI640G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFI640G?

IRFI640G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFI640G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFI640G?

For technical support, including IRFI640G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFI640G requirements.

6.How does Aetrix verify that IRFI640G is sourced from the original manufacturer or authorized distributors?

All IRFI640G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFI640G meets industry standards.

7.What is the process for return or replacement of IRFI640G?

All IRFI640G units undergo pre-shipment inspection (PSI). If there is an issue with IRFI640G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFI640G part is unused and in its original packaging.

Return procedure for IRFI640G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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