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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFI734G

Name: IRFI734G
Brand: Vishay Siliconix
SKU: IRFI734G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFI734G

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack, Isolated Tab

Datasheet:: IRFI734G.pdf

Description:: MOSFET N-CH 450V 3.4A TO220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFI734G from Vishay Siliconix is a 450 V, 3.4 A N-channel power MOSFET in TO-220 FULLPAK isolated package, featuring 1.2 Ω R_DS(on) at V_GS = 10 V, 45 nC total gate charge, and 2.5 kV_RMS isolation rating. It serves as a high-voltage switching element in offline AC-DC power supplies, motor control snubbers, and industrial solenoid drivers where creepage >4.8 mm and thermal reliability are critical.

For engineers reviewing the IRFI734G datasheet, IRFI734G pinout, IRFI734G application, or IRFI734G equivalent, key selection criteria include its 450 V blocking capability, isolated TO-220 FULLPAK mechanical design, avalanche energy rating (100 mJ), body diode recovery performance (trr = 460–690 ns), and compatibility with standard heatsink mounting via single screw or clip.

Technical Context

This device belongs to Vishay's third-generation Power MOSFET family optimized for ruggedized switching in high-voltage industrial systems. Its isolated TO-220 FULLPAK construction eliminates need for external insulators, while low R_thJC = 3.6 °C/W enables efficient heat transfer to heatsinks without thermal interface materials.

The IRFI734G supports unclamped inductive switching with repetitive avalanche current I_AR = 3.4 A and single-pulse E_AS = 100 mJ. Its dynamic dV/dt rating of 4.0 V/ns and body diode reverse recovery charge Q_rr = 1.8–2.7 µC indicate suitability for hard-switched topologies with moderate switching frequency constraints.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	450 V - supports direct connection to 380 VAC rectified bus with margin
R_DS(on)	1.2 Ω @ V_GS = 10 V - limits conduction loss to ≤13.8 W at 3.4 A continuous
Q_g	45 nC - determines gate drive power requirement and switching speed trade-off
E_AS	100 mJ - enables reliable operation under unclamped inductive load transients
R_thJC	3.6 °C/W - allows 35 W dissipation with ≤126 °C junction rise above 25 °C case
Isolation	2.5 kV_RMS/60 s - replaces mica insulator in commercial-industrial mounting
trr / Q_rr	460–690 ns / 1.8–2.7 µC - defines body diode recovery stress during hard commutation

Pinout & Package

IRFI734G uses the TO-220 FULLPAK package: insulated plastic body with metal tab electrically connected to drain, enabling direct heatsink mounting without additional isolation hardware. Creepage distance from sink to lead is 4.8 mm.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires ≥10 V for full enhancement; ±20 V absolute max rating
D	Drain	High-side switching node; electrically tied to metal tab and heatsink; 450 V rated
S	Source	Return path for load current; referenced to PCB ground; forms common node with gate driver return

Key Features

Feature	Design Value
Isolated TO-220 FULLPAK	Eliminates need for mica washers or insulating pads in heatsink mounting
2.5 kV_RMS isolation	Meets reinforced insulation requirements per IEC 60950-1 for primary-secondary barrier
Low R_thJC = 3.6 °C/W	Enables higher power density vs. standard TO-220 with separate insulator
100 mJ single-pulse avalanche energy	Supports robust operation in inductive load switching without external snubbers
Lead (Pb)-free construction	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile

Applications

Industrial Motor Control	AC-DC Offline SMPS
Use Scenario: Driving 24–48 V DC solenoids and small brush motors in PLC output modules. IC Role / Device Role / Timing Role: High-side switch controlling inductive load current with integrated body diode freewheeling. Use Value: 450 V rating accommodates back-EMF spikes up to 360 V; 100 mJ E_AS prevents failure during rapid turn-off.	Use Scenario: Primary-side switching in 15–30 W flyback converters for industrial sensors and actuators. IC Role / Device Role / Timing Role: Main power switch operating at 65–100 kHz with self-clamped or RCD snubber. Use Value: Isolated tab simplifies transformer primary-secondary creepage compliance; 1.2 Ω R_DS(on) maintains >85% efficiency at full load.
Lighting Ballast Drivers	Power Factor Correction (PFC)
Use Scenario: Half-bridge switching in magnetic HID lamp ballasts requiring high-voltage transient immunity. IC Role / Device Role / Timing Role: Low-side switch in resonant half-bridge topology handling 300–400 V DC link. Use Value: 4.0 V/ns dV/dt rating ensures stable gate control during fast voltage transitions across drain-source.	Use Scenario: Boost switch in active PFC stages for industrial power supplies and UPS systems. IC Role / Device Role / Timing Role: Fast-turning boost switch managing line-frequency current shaping with high peak currents. Use Value: Body diode trr = 460–690 ns and Q_rr = 1.8–2.7 µC reduce switching losses and EMI in continuous conduction mode.

Industrial Motor Control

AC-DC Offline SMPS

Use Scenario: Driving 24–48 V DC solenoids and small brush motors in PLC output modules.

IC Role / Device Role / Timing Role: High-side switch controlling inductive load current with integrated body diode freewheeling.

Use Value: 450 V rating accommodates back-EMF spikes up to 360 V; 100 mJ E_AS prevents failure during rapid turn-off.

Use Scenario: Primary-side switching in 15–30 W flyback converters for industrial sensors and actuators.

IC Role / Device Role / Timing Role: Main power switch operating at 65–100 kHz with self-clamped or RCD snubber.

Use Value: Isolated tab simplifies transformer primary-secondary creepage compliance; 1.2 Ω R_DS(on) maintains >85% efficiency at full load.

Lighting Ballast Drivers

Power Factor Correction (PFC)

Use Scenario: Half-bridge switching in magnetic HID lamp ballasts requiring high-voltage transient immunity.

IC Role / Device Role / Timing Role: Low-side switch in resonant half-bridge topology handling 300–400 V DC link.

Use Value: 4.0 V/ns dV/dt rating ensures stable gate control during fast voltage transitions across drain-source.

Use Scenario: Boost switch in active PFC stages for industrial power supplies and UPS systems.

IC Role / Device Role / Timing Role: Fast-turning boost switch managing line-frequency current shaping with high peak currents.

Use Value: Body diode trr = 460–690 ns and Q_rr = 1.8–2.7 µC reduce switching losses and EMI in continuous conduction mode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage isolated MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK50ZFP	500 V V_DS, 4.0 A I_D, 1.8 Ω R_DS(on), TO-220FP (non-isolated)	Requires external insulator; higher R_DS(on) increases conduction loss by ~50%	Choose when higher voltage margin is needed and isolation can be added externally
IXTP3N50D2	500 V V_DS, 3.0 A I_D, 2.0 Ω R_DS(on), TO-220 (non-isolated), 100% avalanche rated	No built-in isolation; lower current rating reduces thermal headroom	Prefer when strict avalanche endurance is required over isolation convenience

Compared with STP4NK50ZFP and IXTP3N50D2, the IRFI734G delivers verified 2.5 kV_RMS isolation in-package, lower on-resistance, and superior thermal resistance-making it optimal for space-constrained industrial designs where mounting hardware reduction and creepage compliance are critical.

Availability

IRFI734G is available at Aetrix Electronics and suitable for industrial motor control, AC-DC offline SMPS, lighting ballast drivers, and power factor correction circuits requiring stable component supply and long-term lifecycle support.

Supply support for IRFI734G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and thermal performance.

The IRFI734G belongs to Vishay's isolated FULLPAK MOSFET product line, engineered specifically for high-voltage industrial switching applications where simplified heatsink integration and reinforced insulation are mandatory.

FAQ

What is the maximum continuous drain current for the IRFI734G at 100 °C case temperature?

The IRFI734G supports 2.1 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220 FULLPAK package and must be applied in thermal design calculations. The IRFI734G datasheet confirms this value under steady-state conditions with proper heatsinking.

Does the IRFI734G require an external insulator when mounted to a heatsink?

No, the IRFI734G does not require an external insulator because its TO-220 FULLPAK package integrates 2.5 kV_RMS isolation between the drain-connected metal tab and leads. This eliminates mica washers or silicone pads in most commercial-industrial applications, provided creepage and clearance meet system-level safety standards. The IRFI734G achieves 4.8 mm sink-to-lead creepage distance per specification.

What is the typical body diode reverse recovery time (trr) of the IRFI734G?

The IRFI734G exhibits a typical body diode reverse recovery time (t_rr) of 460–690 ns at T_J = 25 °C, I_F = 4.9 A, and dI/dt = 100 A/µs. This parameter directly impacts switching losses and EMI in hard-commutated topologies. The IRFI734G datasheet specifies this range in the "Drain-Source Body Diode Characteristics" section.

Can the IRFI734G be used in avalanche mode repeatedly?

Yes, the IRFI734G is rated for repetitive avalanche operation with I_AR = 3.4 A and E_AR = 3.5 mJ per pulse, subject to pulse width and duty cycle limits defined in the datasheet. These ratings assume T_J ≤ 150 °C and are validated per Vishay's test conditions. Designers must verify thermal stability during repetitive avalanche events in the IRFI734G application circuit.

What is the gate threshold voltage range for the IRFI734G?

The IRFI734G has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 µA. This indicates standard-level logic drive compatibility, requiring ≥10 V gate drive for full enhancement. The IRFI734G specification sheet lists this parameter in the "Static" section under "Gate-Source Threshold Voltage".

IRFI734G Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack, Isolated Tab

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 450 V

Current - Continuous Drain (Id) @ 25°C:: 3.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.2Ohm @ 2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 680 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

IRFI734G FAQ

1.How can I place an order for IRFI734G through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFI734G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFI734G reliable?

The price and inventory of IRFI734G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFI734G is usually 5 days.

3.What payment methods are accepted for IRFI734G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFI734G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFI734G?

IRFI734G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFI734G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFI734G?

For technical support, including IRFI734G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFI734G requirements.

6.How does Aetrix verify that IRFI734G is sourced from the original manufacturer or authorized distributors?

All IRFI734G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFI734G meets industry standards.

7.What is the process for return or replacement of IRFI734G?

All IRFI734G units undergo pre-shipment inspection (PSI). If there is an issue with IRFI734G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFI734G part is unused and in its original packaging.

Return procedure for IRFI734G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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