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Vishay Siliconix IRFI734GPBF

Part No.:
IRFI734GPBF
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack, Isolated Tab
Datasheet:
AetrixIRFI734GPBF.pdf
Description:
MOSFET N-CH 450V 3.4A TO220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,468

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Product details

Overview

IRFI734GPBF from Vishay Siliconix is a 450 V, 3.4 A N-channel power MOSFET in TO-220 FULLPAK package with isolated tab, 1.2 Ω RDS(on) at VGS = 10 V, and 2.5 kVRMS isolation rating - designed for high-voltage AC/DC power supplies, offline SMPS, and industrial motor control where creepage and thermal management are critical.

For engineers reviewing the IRFI734GPBF datasheet, IRFI734GPBF pinout, IRFI734GPBF application, or IRFI734GPBF equivalent, key selection factors include its 2.5 kVRMS isolation capability, 3.6 °C/W junction-to-case thermal resistance, avalanche-rated operation (100 mJ single-pulse), and compatibility with standard heatsink mounting via single screw or clip - all verified per Vishay Document #91154.

Technical Context

This device implements a third-generation planar vertical DMOS structure optimized for ruggedized switching in high-voltage, low-duty-cycle applications. Its isolated TO-220 FULLPAK package integrates a molded compound providing both 4.8 mm sink-to-lead creepage and low thermal resistance - eliminating need for external insulators while enabling direct heatsink attachment.

The IRFI734GPBF supports unclamped inductive switching with specified repetitive avalanche current (3.4 A) and energy (3.5 mJ), and features fast body diode recovery (trr = 460–690 ns, Qrr = 1.8–2.7 µC) under dI/dt = 100 A/µs conditions - critical for snubberless flyback and resonant converter topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VDS450 V - supports primary-side switching in universal-input offline converters up to 380 V DC bus
RDS(on)1.2 Ω max at VGS = 10 V - enables <3.4 A continuous conduction with ≤14 W conduction loss at TC = 25 °C
Qg45 nC max - determines gate drive power requirement and switching speed in hard-switched topologies
EAS100 mJ single-pulse - allows reliable operation during transient overloads without external snubbers
RthJC3.6 °C/W max - enables efficient heat transfer to heatsink, supporting 35 W PD at TC = 25 °C
trr460–690 ns - reduces switching losses and EMI in diode-commutated phases of LLC and flyback converters
VISOL2.5 kVRMS, 60 s - meets reinforced insulation requirements for IEC/UL 62368-1 and IEC 60950-1 end-equipment safety

Pinout & Package

TO-220 FULLPAK package with electrically isolated metal tab (drain-connected), 3-pin through-hole configuration. Tab provides mechanical mounting surface and thermal path; isolation eliminates need for mica washers or silicone pads in commercial-industrial designs.

Pin/TerminalCircuit RoleDesign Meaning
GGateControl terminal; requires ≥10 V drive for full enhancement; ±20 V absolute max rating
DDrainMain high-voltage current path; internally connected to isolated tab; rated for 450 V blocking
SSourcePower return node; referenced to gate drive ground; carries full load current and body diode conduction

Key Features

FeatureDesign Value
Isolated TO-220 FULLPAK2.5 kVRMS isolation and 4.8 mm creepage enable direct heatsink mounting without insulating hardware
Rugged Avalanche Rating100 mJ single-pulse and 3.5 mJ repetitive avalanche energy support reliable unclamped inductive switching
Low Thermal Resistance3.6 °C/W junction-to-case allows high-power dissipation with minimal heatsink size
Fast Body Diode Recovery460–690 ns trr and 1.8–2.7 µC Qrr reduce switching losses in discontinuous conduction mode (DCM) topologies

Applications

AC/DC Power SuppliesIndustrial Motor Drives

Use Scenario: Primary-side switch in 50–150 W offline flyback converters with universal AC input (85–265 VAC).

IC Role / Device Role / Timing Role: High-voltage power switch handling rectified line voltage; operates in DCM with self-driven synchronous rectification or diode output.

Use Value: 450 V VDS and 2.5 kVRMS isolation meet safety standards without auxiliary insulation layers; 1.2 Ω RDS(on) limits conduction loss at 3.4 A peak.

Use Scenario: Half-bridge upper-leg switch in 3-phase BLDC inverter stages for HVAC blowers and pump controllers.

IC Role / Device Role / Timing Role: High-side switching element in 200–400 V DC bus systems; commutates inductive motor windings with controlled dV/dt.

Use Value: 4.0 V/ns peak diode recovery dV/dt rating prevents false turn-on; 3.4 A continuous drain current supports 100–200 W mechanical output.

UPS SystemsLighting Ballasts

Use Scenario: Inverter-stage switch in line-interactive UPS units delivering 300–600 VA backup power.

IC Role / Device Role / Timing Role: Bidirectional switching element in H-bridge topology; handles battery-to-AC inversion and line-charge functions.

Use Value: Repetitive avalanche rating (3.4 A, 3.5 mJ) ensures robustness against short-circuit transients during battery overload events.

Use Scenario: Resonant half-bridge switch in electronic CFL and LED driver ballasts operating at 25–100 kHz.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) active device; body diode conducts reverse current during dead-time intervals.

Use Value: Fast trr (460–690 ns) and low Qrr minimize switching loss and ringing during ZVS transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP4NK50ZFP500 V VDS, 3.3 A ID, 1.7 Ω RDS(on), TO-220FP (non-isolated)Requires external insulation for heatsink mounting; higher RDS(on) increases conduction lossChoose when higher voltage margin is needed and isolation can be added externally
FQP4N50500 V VDS, 4.0 A ID, 1.5 Ω RDS(on), TO-220 (non-isolated)No isolation rating; lower thermal resistance (3.0 °C/W) but needs insulator kitPrefer when board space allows insulator integration and higher continuous current is required

Compared with STP4NK50ZFP and FQP4N50, the IRFI734GPBF delivers certified 2.5 kVRMS isolation and 4.8 mm creepage in a drop-in mountable package - reducing BOM count and assembly steps in safety-critical AC/DC systems, though with slightly lower voltage rating than alternatives.

Availability

IRFI734GPBF is available at Aetrix Electronics and suitable for AC/DC power supplies, industrial motor drives, and uninterruptible power systems requiring stable component supply, long-term lifecycle support, and traceable sourcing for safety-certified designs.

Supply support for IRFI734GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific packaging.

The IRFI734GPBF belongs to Vishay's third-generation isolated power MOSFET product line, engineered specifically for high-voltage switching in commercial and industrial power conversion where safety isolation, thermal efficiency, and avalanche robustness are mandatory.

FAQ

What is the maximum continuous drain current rating for the IRFI734GPBF at 100 °C case temperature?

The IRFI734GPBF has a maximum continuous drain current (ID) of 2.1 A at TC = 100 °C, derated linearly from 3.4 A at 25 °C using a 0.28 W/°C derating factor. This value reflects thermal limitations under sustained conduction and must be validated against actual PCB layout, heatsink performance, and ambient conditions in the final design. The IRFI734GPBF datasheet (Document #91154) specifies this in the Absolute Maximum Ratings table.

Does the IRFI734GPBF require an insulating pad or washer when mounted to a heatsink?

No, the IRFI734GPBF does not require an insulating pad or washer because its TO-220 FULLPAK package features an electrically isolated metal tab rated for 2.5 kVRMS isolation. The molding compound provides inherent insulation equivalent to a 100 µm mica barrier. This isolation is confirmed in Vishay's documentation and eliminates additional hardware - a key advantage of the IRFI734GPBF in cost-sensitive and safety-compliant designs.

What is the typical gate charge profile of the IRFI734GPBF, and how does it affect switching behavior?

The IRFI734GPBF has a total gate charge (Qg) of 45 nC max, with Qgs = 6.6 nC and Qgd = 24 nC. This distribution indicates strong Miller effect influence, requiring careful gate driver selection to manage dv/dt-induced turn-on risk. The IRFI734GPBF's Qgd/Qgs ratio (~3.6) suggests moderate Miller plateau duration - critical for optimizing dead-time in bridge configurations and minimizing shoot-through risk in half-bridge applications.

Can the IRFI734GPBF be used in avalanche-mode operation, and what are its rated limits?

Yes, the IRFI734GPBF is rated for both single-pulse (EAS = 100 mJ) and repetitive avalanche operation (IAR = 3.4 A, EAR = 3.5 mJ). These ratings are validated per Vishay test conditions (VDD = 50 V, L = 15 mH, RG = 25 Ω) and assume proper thermal management. The IRFI734GPBF's ruggedized die design supports reliable energy absorption without degradation - making it suitable for snubberless flyback and inductive load switching where voltage spikes exceed VDS.

What is the body diode forward voltage (VSD) of the IRFI734GPBF, and how does it impact efficiency in synchronous rectification?

The IRFI734GPBF body diode forward voltage is 2.0 V max at TJ = 25 °C and IS = 4.9 A with VGS = 0 V. While not optimized for low-VF synchronous rectification, this VSD is acceptable for low-duty-cycle freewheeling in flyback or LLC converters. For high-efficiency synchronous rectification, external Schottky diodes or dedicated SR controllers are recommended - the IRFI734GPBF serves best as a primary-side switch where its isolation and avalanche capability outweigh body diode limitations.

IRFI734GPBF Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-220-3 Full Pack, Isolated Tab
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
450 V
Current - Continuous Drain (Id) @ 25°C:
3.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.2Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
45 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
680 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
35W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220-3

IRFI734GPBF FAQ

1.How can I place an order for IRFI734GPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFI734GPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFI734GPBF reliable?

The price and inventory of IRFI734GPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFI734GPBF is usually 5 days.

3.What payment methods are accepted for IRFI734GPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFI734GPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFI734GPBF?

IRFI734GPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFI734GPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFI734GPBF?

For technical support, including IRFI734GPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFI734GPBF requirements.

6.How does Aetrix verify that IRFI734GPBF is sourced from the original manufacturer or authorized distributors?

All IRFI734GPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFI734GPBF meets industry standards.

7.What is the process for return or replacement of IRFI734GPBF?

All IRFI734GPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFI734GPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFI734GPBF part is unused and in its original packaging.

Return procedure for IRFI734GPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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