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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFI740GLCPBF

Name: IRFI740GLCPBF
Brand: Vishay Siliconix
SKU: IRFI740GLCPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFI740GLCPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack, Isolated Tab

Datasheet:: IRFI740GLCPBF.pdf

Description:: MOSFET N-CH 400V 5.7A TO220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFI740GLCPBF from Vishay Siliconix is a 400 V, 5.7 A N-channel power MOSFET in TO-220 FULLPAK package, featuring 0.55 Ω R_DS(on) at V_GS = 10 V, 39 nC total gate charge, and 2.5 kV_RMS isolation rating - designed for high-voltage DC-DC converters, AC-DC front-end switches, and industrial motor control where galvanic isolation and avalanche ruggedness are critical.

For engineers reviewing the IRFI740GLCPBF datasheet, IRFI740GLCPBF pinout, IRFI740GLCPBF application, or IRFI740GLCPBF equivalent, this device delivers verified repetitive avalanche capability (E_AS = 310 mJ), enhanced ±30 V gate rating, and isolated package construction eliminating external insulation hardware - key selection criteria for reliable high-side switching in 380–400 V bus systems.

Technical Context

This N-channel MOSFET employs planar vertical DMOS technology optimized for low gate charge (Q_g = 39 nC max) and fast switching (t_r = 31 ns, t_f = 20 ns), enabling high-frequency operation up to 100 kHz in hard-switched topologies. Its isolated TO-220 FULLPAK package integrates molded compound with 4.8 mm sink-to-lead creepage distance and 3.1 °C/W junction-to-case thermal resistance.

The device supports unclamped inductive switching with validated repetitive avalanche current (I_AR = 5.7 A) and energy (E_AR = 4.0 mJ), while its body diode exhibits t_rr = 380–570 ns and Q_rr = 2.8–4.2 μC - parameters directly specified for TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μs conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	400 V - supports operation across 380 V DC bus and 400 V peak line voltage applications without derating
R_DS(on)	0.55 Ω @ V_GS = 10 V - enables <5.7 A continuous conduction with ≤18 W conduction loss at T_C = 25 °C
Q_g	39 nC max - reduces gate driver power demand and allows use of lower-current drivers (e.g., TC4420)
I_D (T_C = 100 °C)	3.6 A - defines usable current limit in thermally constrained heatsink environments
E_AS	310 mJ - specifies single-pulse unclamped inductive energy handling under V_DD = 50 V, L = 16 mH test condition
V_GS Rating	±30 V - permits robust gate drive margin against transients and simplifies level-shifting design
Isolation Voltage	2.5 kV_RMS (60 s, 60 Hz) - eliminates need for insulating pads or sleeves when mounting to grounded heatsinks

Pinout & Package

IRFI740GLCPBF uses the TO-220 FULLPAK package: isolated plastic housing with integral drain tab, 3-pin through-hole configuration (G-D-S), 15.87 mm × 10.10 mm × 13.10 mm footprint, and exposed copper drain pad for direct heatsink attachment.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives 10 V logic-level drive; ±30 V absolute max rating ensures tolerance to gate ringing
D (Drain)	High-side power output	Connected to 400 V bus; electrically isolated from tab via molding compound; tab serves as thermal path only
S (Source)	Power return / reference	Common node for gate drive return and load current; ties to system ground or floating reference in high-side configurations

Key Features

Feature	Design Value
Ultra-low gate charge	Q_g = 39 nC enables <100 ns switching transitions with standard 1 A gate drivers
Isolated TO-220 FULLPAK	2.5 kV_RMS isolation and 4.8 mm creepage eliminate insulating hardware and reduce BOM count
Repetitive avalanche rated	Validated I_AR = 5.7 A and E_AR = 4.0 mJ support robust operation in inductive load switching without snubbers
Enhanced V_GS rating	±30 V gate rating provides 2× margin over standard 15 V drive, reducing risk of gate oxide failure
Low thermal resistance	R_thJC = 3.1 °C/W enables 40 W dissipation with ≤124 °C junction rise above 25 °C case temperature

Applications

Industrial Motor Drives	AC-DC Front-End Switches
Use Scenario: High-side switch in 3-phase inverter half-bridge stages driving 0.5–2 kW induction motors. IC Role / Device Role / Timing Role: Power switching element controlling phase voltage delivery; operates at 8–16 kHz PWM with hard commutation. Use Value: Repetitive avalanche rating (I_AR = 5.7 A) absorbs inductive kickback during short-circuit events without failure.	Use Scenario: Active PFC boost switch in universal-input (90–264 V_AC) offline SMPS delivering ≥300 W. IC Role / Device Role / Timing Role: Main switching transistor in continuous conduction mode (CCM) boost converter operating at 65–100 kHz. Use Value: Low Q_g (39 nC) and fast switching (t_r/t_f = 31/20 ns) minimize switching losses and improve efficiency at high frequency.
DC-DC Converters	High-Voltage Power Supplies
Use Scenario: Primary-side switch in isolated flyback or forward converters for telecom 48 V or industrial 24 V distribution. IC Role / Device Role / Timing Role: 400 V-rated main switch handling 380 V DC input; duty cycle modulated for regulation. Use Value: 0.55 Ω R_DS(on) limits conduction loss to <12 W at 5.7 A, supporting compact heatsink design.	Use Scenario: Series pass or switching element in programmable 0–400 V laboratory power supplies. IC Role / Device Role / Timing Role: High-voltage switching transistor in linear-regulated or switched-mode output stage. Use Value: 2.5 kV_RMS isolation and 4.8 mm creepage meet reinforced insulation requirements per IEC 61010-1.

Industrial Motor Drives

AC-DC Front-End Switches

Use Scenario: High-side switch in 3-phase inverter half-bridge stages driving 0.5–2 kW induction motors.

IC Role / Device Role / Timing Role: Power switching element controlling phase voltage delivery; operates at 8–16 kHz PWM with hard commutation.

Use Value: Repetitive avalanche rating (I_AR = 5.7 A) absorbs inductive kickback during short-circuit events without failure.

Use Scenario: Active PFC boost switch in universal-input (90–264 V_AC) offline SMPS delivering ≥300 W.

IC Role / Device Role / Timing Role: Main switching transistor in continuous conduction mode (CCM) boost converter operating at 65–100 kHz.

Use Value: Low Q_g (39 nC) and fast switching (t_r/t_f = 31/20 ns) minimize switching losses and improve efficiency at high frequency.

DC-DC Converters

High-Voltage Power Supplies

Use Scenario: Primary-side switch in isolated flyback or forward converters for telecom 48 V or industrial 24 V distribution.

IC Role / Device Role / Timing Role: 400 V-rated main switch handling 380 V DC input; duty cycle modulated for regulation.

Use Value: 0.55 Ω R_DS(on) limits conduction loss to <12 W at 5.7 A, supporting compact heatsink design.

Use Scenario: Series pass or switching element in programmable 0–400 V laboratory power supplies.

IC Role / Device Role / Timing Role: High-voltage switching transistor in linear-regulated or switched-mode output stage.

Use Value: 2.5 kV_RMS isolation and 4.8 mm creepage meet reinforced insulation requirements per IEC 61010-1.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK40ZFP	400 V, 3.5 A, R_DS(on) = 1.4 Ω, Q_g = 17 nC, TO-220FP (non-isolated)	Lacks isolation; requires insulating washer; lower current rating limits use in >3 A loads	Prefer IRFI740GLCPBF where isolation, higher current, or avalanche ruggedness is required
IXTP4N40P	400 V, 4.0 A, R_DS(on) = 1.2 Ω, Q_g = 22 nC, TO-220 (non-isolated)	No isolation; lower I_D and higher R_DS(on); not avalanche rated	IRFI740GLCPBF offers 43% higher continuous current and certified avalanche performance for safety-critical designs

Compared with STP4NK40ZFP and IXTP4N40P, the IRFI740GLCPBF delivers higher current capability (5.7 A vs. ≤4.0 A), lower on-resistance (0.55 Ω vs. ≥1.2 Ω), and built-in 2.5 kV_RMS isolation - making it uniquely suitable for high-reliability, high-voltage switching where thermal, electrical, and safety margins are constrained.

Availability

IRFI740GLCPBF is available at Aetrix Electronics and suitable for industrial motor drives, AC-DC front-end switches, and high-voltage DC-DC converters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IRFI740GLCPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.

The IRFI740GLCPBF belongs to Vishay's isolated high-voltage power MOSFET product line, engineered specifically for industrial switching applications demanding galvanic isolation, repetitive avalanche capability, and simplified thermal/mechanical integration.

FAQ

What is the maximum continuous drain current for IRFI740GLCPBF at 100 °C case temperature?

The IRFI740GLCPBF supports 3.6 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects linear derating from 5.7 A at 25 °C using the 0.32 W/°C factor, and must be applied with appropriate heatsinking to maintain junction temperature ≤150 °C. The IRFI740GLCPBF datasheet confirms this rating applies under steady-state conduction with no pulse limitations.

Does IRFI740GLCPBF require an insulating pad when mounted to a metal heatsink?

No, the IRFI740GLCPBF does not require an insulating pad due to its TO-220 FULLPAK package, which provides 2.5 kV_RMS isolation between drain and tab for 60 seconds at 60 Hz. The molding compound achieves 4.8 mm sink-to-lead creepage distance, enabling direct mounting to grounded heatsinks - a key design advantage confirmed in the Vishay S21-0974-Rev. C datasheet.

What is the gate threshold voltage range for IRFI740GLCPBF?

The gate-source threshold voltage (V_GS(th)) for IRFI740GLCPBF is specified as 2.0 V to 4.0 V at V_DS = V_GS and I_D = 250 μA, per the Static Specifications table. This range ensures reliable turn-on with standard 10 V gate drive while maintaining noise immunity - a parameter explicitly measured and guaranteed across production lots in the Vishay 91155 datasheet.

Is IRFI740GLCPBF rated for repetitive avalanche operation?

Yes, the IRFI740GLCPBF is explicitly rated for repetitive avalanche operation, with I_AR = 5.7 A and E_AR = 4.0 mJ specified in the Absolute Maximum Ratings table. These values are validated under defined test conditions (V_DD = 50 V, L = 16 mH, R_g = 25 Ω) and reflect pulsed operation limited by junction temperature - a key ruggedness feature distinguishing it from non-avalanche-rated MOSFETs.

What is the typical reverse recovery time of the body diode in IRFI740GLCPBF?

The body diode reverse recovery time (t_rr) for IRFI740GLCPBF is specified as 380–570 ns under test conditions of T_J = 25 °C, I_F = 10 A, and dI/dt = 100 A/μs. This parameter is measured per Figure 7 and Table "Drain-Source Body Diode Characteristics" in the Vishay 91155 datasheet and directly impacts commutation losses in synchronous rectification or freewheeling applications.

IRFI740GLCPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack, Isolated Tab

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 400 V

Current - Continuous Drain (Id) @ 25°C:: 5.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 550mOhm @ 3.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 39 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1100 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 40W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

IRFI740GLCPBF FAQ

1.How can I place an order for IRFI740GLCPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFI740GLCPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFI740GLCPBF reliable?

The price and inventory of IRFI740GLCPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFI740GLCPBF is usually 5 days.

3.What payment methods are accepted for IRFI740GLCPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFI740GLCPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFI740GLCPBF?

IRFI740GLCPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFI740GLCPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFI740GLCPBF?

For technical support, including IRFI740GLCPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFI740GLCPBF requirements.

6.How does Aetrix verify that IRFI740GLCPBF is sourced from the original manufacturer or authorized distributors?

All IRFI740GLCPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFI740GLCPBF meets industry standards.

7.What is the process for return or replacement of IRFI740GLCPBF?

All IRFI740GLCPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFI740GLCPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFI740GLCPBF part is unused and in its original packaging.

Return procedure for IRFI740GLCPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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