Vishay Siliconix IRFI744GPBF

Overview

IRFI744GPBF from Vishay Siliconix is a 450 V, 4.9 A N-channel power MOSFET in TO-220 FULLPAK package with isolated tab, 0.63 Ω R_DS(on) at V_GS = 10 V, and 2.5 kV_RMS isolation rating. It serves as a high-voltage switching element in offline SMPS, AC motor controls, and industrial power supplies where creepage distance and thermal performance are critical.

For engineers reviewing the IRFI744GPBF datasheet, IRFI744GPBF pinout, IRFI744GPBF application, or IRFI744GPBF equivalent, key selection criteria include its 4.8 mm sink-to-lead creepage, 3.1 °C/W junction-to-case thermal resistance, 80 nC total gate charge, and avalanche-rated operation up to 130 mJ for unclamped inductive switching.

Technical Context

This third-generation Power MOSFET uses planar VDMOS technology optimized for ruggedized switching in high-voltage DC/DC and AC/DC converters. Its isolated TO-220 FULLPAK package integrates a thermally efficient molding compound that delivers 2.5 kV_RMS isolation - equivalent to a 100 µm mica barrier - without external insulation hardware.

The device supports fast switching with 8.7 ns turn-on delay and 27 ns fall time under standard test conditions (V_DD = 225 V, I_D = 8.8 A, R_G = 9.1 Ω), while maintaining robust safe operating area (SOA) up to 4.9 A continuous drain current at T_C = 25 °C and linear derating of 0.32 W/°C above that temperature.

Key Specifications

Pinout & Package

IRFI744GPBF uses the TO-220 FULLPAK package with an electrically isolated metal tab (drain-connected), enabling direct heatsink mounting without insulating hardware. The molded body provides 4.8 mm creepage between sink and leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP4NK50ZFP and IXTP4N50D2, the IRFI744GPBF offers the lowest R_DS(on) (0.63 Ω) and highest continuous current (4.9 A) among these 450–500 V TO-220 isolated MOSFETs, making it optimal for thermally constrained industrial power designs requiring minimal heatsink mass.

Availability

IRFI744GPBF is available at Aetrix Electronics and suitable for industrial motor drives, offline switch-mode power supplies, and lighting ballasts requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for IRFI744GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with vertically integrated wafer fabrication and packaging.

The IRFI744GPBF belongs to Vishay's third-generation Power MOSFET family, engineered for high-voltage switching in commercial and industrial power conversion where isolation, ruggedness, and thermal efficiency are prioritized over ultra-low gate charge.

FAQ

What is the maximum continuous drain current for IRFI744GPBF at 100 °C case temperature?

The IRFI744GPBF supports 3.1 A continuous drain current at T_C = 100 °C, per its Absolute Maximum Ratings table. This derated value reflects thermal limitations of the TO-220 FULLPAK package and must be used in thermal design calculations alongside its 3.1 °C/W junction-to-case resistance. At 25 °C case temperature, the rating rises to 4.9 A. Designers should verify junction temperature using actual PCB layout and heatsink conditions before finalizing.

Does IRFI744GPBF have a built-in body diode, and what are its key parameters?

Yes, the IRFI744GPBF includes an integral body diode rated for 4.9 A continuous source-drain current and 20 A pulsed current. Its forward voltage is 2.0 V at I_S = 8.8 A and T_J = 25 °C, with reverse recovery time of 490–740 ns and Q_rr of 3.2–4.8 µC. These values are critical for synchronous rectification and freewheeling paths in flyback and LLC converters where diode conduction losses and EMI from reverse recovery matter.

Can IRFI744GPBF be used as a direct replacement for IRFI744G in existing designs?

Yes, IRFI744GPBF is the lead (Pb)-free version of IRFI744G and shares identical electrical specifications, thermal performance, and mechanical dimensions. The "PbF" suffix denotes RoHS-compliant terminations, and both parts use the same TO-220 FULLPAK package with isolated tab. No layout or thermal redesign is required when migrating from IRFI744G to IRFI744GPBF, provided soldering profiles comply with Pb-free reflow standards.

What is the significance of the 2.5 kV_RMS isolation rating for IRFI744GPBF?

The 2.5 kV_RMS isolation rating of IRFI744GPBF means its molded package withstands 2.5 kV AC for 60 seconds at 60 Hz between drain (tab) and leads, eliminating the need for external insulating hardware in mains-connected equipment. This matches the dielectric strength of a 100 µm mica sheet and satisfies reinforced insulation requirements per IEC 60950-1 and UL 60950-1 for applications up to 300 V AC working voltage.

How does the TO-220 FULLPAK package of IRFI744GPBF differ from standard TO-220?

The TO-220 FULLPAK package of IRFI744GPBF features an electrically isolated metal tab (drain-connected) encapsulated within high-isolation molding compound, unlike standard TO-220 which requires external insulators for heatsink mounting. It achieves 4.8 mm creepage distance and 2.5 kV_RMS isolation, enabling direct screw or clip mounting to grounded heatsinks - reducing assembly cost, improving thermal transfer, and enhancing reliability in high-voltage industrial systems.