Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay Siliconix IRFI830G

Part No.:
IRFI830G
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack, Isolated Tab
Datasheet:
AetrixIRFI830G.pdf
Description:
MOSFET N-CH 500V 3.1A TO220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,482

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRFI830G from Vishay Siliconix is a 500 V, 3.1 A N-channel power MOSFET in TO-220 FULLPAK package with isolated tab, 1.5 Ω RDS(on) at VGS = 10 V, 38 nC total gate charge, and 2.5 kVRMS isolation rating - used in high-voltage AC/DC flyback and offline SMPS primary-side switching.

For engineers reviewing the IRFI830G datasheet, IRFI830G pinout, IRFI830G application, or IRFI830G equivalent, this page delivers verified electrical specs, thermal performance data, body diode recovery metrics (trr = 320–640 ns), and real-world mounting guidance for heatsink-integrated designs requiring reinforced isolation and avalanche ruggedness.

Technical Context

This third-generation high-voltage MOSFET features an isolated TO-220 FULLPAK package enabling direct heatsink mounting without mica insulators, delivering 3.6 °C/W junction-to-case thermal resistance and 4.8 mm sink-to-lead creepage. Its 500 V VDS rating and 180 mJ single-pulse avalanche energy support robust operation in unclamped inductive switching.

The device exhibits dynamic dV/dt immunity up to 3.5 V/ns, low internal source/drain inductance (LS = 7.5 nH, LD = 4.5 nH), and integrated body diode with 1.6 V forward drop at 3.1 A - optimized for hard-switched topologies where diode reverse recovery and gate drive loss are critical.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 500 V - supports primary-side switching in 230 VAC offline converters with ≥1.5× safety margin.
RDS(on) 1.5 Ω @ VGS = 10 V - enables <3.1 A continuous conduction with ≤14.5 W conduction loss at TC = 25 °C.
Qg 38 nC - determines gate driver current requirement (~1.6 A peak for 25 ns rise time with 12 Ω gate resistor).
EAS 180 mJ - allows safe operation under unclamped inductive load conditions without external snubbers.
RthJC 3.6 °C/W - enables 35 W power dissipation with ≤126 °C junction rise above 25 °C case temperature.
trr 320–640 ns - defines minimum dead-time requirements in half-bridge configurations to avoid shoot-through.
VGS(th) 2.0–4.0 V - ensures reliable turn-on with standard 10 V gate drivers while rejecting noise below 2 V.

Pinout & Package

IRFI830G uses the TO-220 FULLPAK package: isolated metal tab (drain-connected), 3-pin through-hole outline (13.1 mm × 10.1 mm × 4.7 mm), with molded compound providing 2.5 kVRMS isolation and 4.8 mm creepage between drain tab and leads.

Pin/Terminal Circuit Role Design Meaning
G (Gate) Control terminal Receives voltage-controlled signal to modulate channel conductivity; requires 10 V for full enhancement.
D (Drain) High-side power terminal Connected internally to isolated metal tab; must be mounted to heatsink with electrically insulating interface.
S (Source) Reference and return path Common node for gate drive reference and load current return; establishes local ground for control circuitry.

Key Features

Feature Design Value
Isolated TO-220 FULLPAK package Eliminates need for mica washers or silicone pads - reduces thermal interface resistance by ~0.5 °C/W vs. standard TO-220.
2.5 kVRMS isolation rating Meets reinforced insulation requirements per IEC 60950-1 and IEC 62368-1 for primary-secondary barrier in AC/DC adapters.
Low RthJC = 3.6 °C/W Enables higher power density in space-constrained industrial power supplies without forced air cooling.
Dynamic dV/dt immunity = 3.5 V/ns Prevents false turn-on during fast voltage transients in high-frequency flyback and resonant converters.
Integrated body diode with trr = 320–640 ns Supports synchronous rectification in secondary-side designs and enables quasi-resonant operation without external diodes.

Applications

AC/DC Adapters Industrial SMPS

Use Scenario: 36 W universal-input offline flyback converter for medical auxiliary power.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer across isolation barrier.

Use Value: 500 V rating and 180 mJ EAS ensure reliability during line surges and output short-circuit events.

Use Scenario: 60 W open-frame industrial power supply with wide ambient temperature range (-40 to +70 °C).

IC Role / Device Role / Timing Role: Main switching element in discontinuous conduction mode (DCM) flyback topology.

Use Value: TO-220 FULLPAK isolation eliminates insulator hardware, reducing BOM count and assembly cost by 12%.

LED Drivers UPS Battery Chargers

Use Scenario: Constant-current LED driver for street lighting with 277 VAC input.

IC Role / Device Role / Timing Role: High-side switch regulating bulk capacitor charging and LED string current.

Use Value: 3.5 V/ns dV/dt immunity prevents spurious turn-on during zero-crossing transitions in TRIAC-dimmable systems.

Use Scenario: 1 kW online UPS front-end PFC stage with hold-up time >20 ms.

IC Role / Device Role / Timing Role: Boost switch operating at 65 kHz with 500 V DC-link voltage.

Use Value: 1.5 Ω RDS(on) and 38 nC Qg balance conduction loss and switching loss for >95% efficiency at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP5NK50ZFP 500 V, 4.5 A, RDS(on) = 1.4 Ω, but no isolation rating; TO-220FP package with non-isolated tab. Requires external insulator for heatsink mounting; unsuitable where reinforced isolation is mandated. Select only when isolation is handled at board level and higher current is needed.
FQP5N50CTU 500 V, 4.5 A, RDS(on) = 1.4 Ω, TO-220 package, no isolation; lower Qg (29 nC) but no dV/dt rating. Lacks specified dV/dt immunity and creepage distance; not certified for reinforced insulation. Use only in non-safety-critical, low-cost consumer designs with adequate layout-based isolation.

Compared with STP5NK50ZFP and FQP5N50CTU, the IRFI830G uniquely provides certified 2.5 kVRMS isolation and 4.8 mm creepage in a drop-in TO-220 footprint - eliminating insulator hardware while maintaining compliance with IEC 62368-1 Annex G.

Availability

IRFI830G is available at Aetrix Electronics and suitable for AC/DC adapters, industrial SMPS, and LED drivers requiring stable component supply, long-term lifecycle support, and traceable sourcing for safety-certified designs.

Supply support for IRFI830G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.

The IRFI830G belongs to Vishay's high-voltage isolated MOSFET product line, engineered specifically for safety-critical offline power conversion where reinforced insulation, avalanche ruggedness, and thermal efficiency are mandatory.

FAQ

What is the maximum continuous drain current for IRFI830G at 100 °C case temperature?

The IRFI830G supports 2.0 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220 FULLPAK package and ensures junction temperature remains ≤150 °C under steady-state operation. The linear derating factor is 0.28 W/°C beyond 25 °C case temperature.

Does IRFI830G have a built-in body diode, and what are its key parameters?

Yes, the IRFI830G integrates a body diode with typical forward voltage VSD = 1.6 V at IS = 3.1 A and TJ = 25 °C. Its reverse recovery time trr ranges from 320 ns to 640 ns, and reverse recovery charge Qrr is 1.0–2.0 μC - values critical for designing dead-time in synchronous or quasi-resonant topologies.

Can IRFI830G be used as a direct replacement for standard TO-220 MOSFETs without layout changes?

No - although IRFI830G shares the same outline dimensions as standard TO-220, its FULLPAK variant has an isolated drain tab requiring no insulating hardware, whereas standard TO-220 devices require mica/silicone pads. PCB pad design must accommodate the isolated tab connection, and heatsink mounting must maintain electrical isolation integrity.

What is the gate threshold voltage range for IRFI830G, and how does it affect drive requirements?

The IRFI830G has a gate-source threshold voltage VGS(th) of 2.0–4.0 V at ID = 250 μA. This range ensures compatibility with standard 10 V gate drivers while providing noise immunity against sub-2 V transients. Full enhancement requires ≥10 V VGS, and gate drive circuits must deliver sufficient current to charge 38 nC Qg within target switching times.

Is IRFI830G RoHS-compliant and lead-free?

Yes, the ordering variant IRFI830GPbF is explicitly designated as lead-free and RoHS-compliant per Vishay documentation S21-0975-Rev. C. It meets JEDEC J-STD-020 moisture sensitivity level (MSL) requirements and supports standard reflow profiles with peak temperature up to 300 °C for 10 seconds.

IRFI830G Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-220-3 Full Pack, Isolated Tab
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
500 V
Current - Continuous Drain (Id) @ 25°C:
3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.5Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
38 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
610 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
35W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220-3

IRFI830G FAQ

1.How can I place an order for IRFI830G through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFI830G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFI830G reliable?

The price and inventory of IRFI830G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFI830G is usually 5 days.

3.What payment methods are accepted for IRFI830G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFI830G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFI830G?

IRFI830G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFI830G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFI830G?

For technical support, including IRFI830G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFI830G requirements.

6.How does Aetrix verify that IRFI830G is sourced from the original manufacturer or authorized distributors?

All IRFI830G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFI830G meets industry standards.

7.What is the process for return or replacement of IRFI830G?

All IRFI830G units undergo pre-shipment inspection (PSI). If there is an issue with IRFI830G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFI830G part is unused and in its original packaging.

Return procedure for IRFI830G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRFI830G Tags

  • IRFI830G
  • IRFI830G PDF
  • IRFI830G Datasheet
  • IRFI830G Specifications
  • IRFI830G Images
  • Vishay Siliconix
  • Vishay Siliconix IRFI830G
  • Buy IRFI830G
  • IRFI830G Price
  • IRFI830G Distributor
  • IRFI830G Supplier
  • IRFI830G Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER