My Inquiry
My Account
Vishay Siliconix IRFI830GPBF
- Part No.:
- IRFI830GPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack, Isolated Tab
- Datasheet:
-
IRFI830GPBF.pdf
- Description:
- MOSFET N-CH 500V 3.1A TO220-3
- Quantity:
- Payment:
- Shipping:
Inventory:781
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRFI830GPBF from Vishay Siliconix is a 500 V, 3.1 A N-channel power MOSFET in TO-220 FULLPAK isolated package, featuring 1.5 Ω RDS(on) at VGS = 10 V, 38 nC total gate charge, and 2.5 kVRMS isolation rating - designed for high-voltage AC/DC flyback and offline SMPS primary-side switching.
For engineers reviewing the IRFI830GPBF datasheet, IRFI830GPBF pinout, IRFI830GPBF application, or IRFI830GPBF equivalent, key selection criteria include its isolated TO-220 FULLPAK thermal performance (RthJC = 3.6 °C/W), avalanche ruggedness (EAS = 180 mJ), and body diode recovery (trr = 320–640 ns) in high-reliability industrial power supplies.
Technical Context
This third-generation high-voltage MOSFET uses planar V-groove technology to balance low conduction loss and fast switching. Its isolated TO-220 FULLPAK package integrates high-dielectric molding compound enabling 2.5 kVRMS isolation without external insulation hardware.
The device supports unclamped inductive switching with repetitive avalanche current IAR = 3.1 A and peak dV/dt immunity of 3.5 V/ns. Gate threshold voltage (2.0–4.0 V) and low Qgd/Qg ratio (22/38 nC) support stable hard-switching operation in 50–100 kHz flyback converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - supports 400 V DC bus designs with 25 % margin for line surges in universal-input offline SMPS. |
| RDS(on) | 1.5 Ω @ VGS = 10 V - enables <3.5 W conduction loss at 3.1 A continuous drain current (TC = 25 °C). |
| Qg | 38 nC - determines gate drive power requirement (~1.9 mW per 100 kHz switch cycle with 5 V swing). |
| EAS | 180 mJ - allows single-pulse energy absorption during transformer leakage inductance turn-off without failure. |
| RthJC | 3.6 °C/W - enables 35 W dissipation at 25 °C case temperature; critical for heatsink-limited industrial enclosures. |
| trr | 320–640 ns - defines reverse recovery window during synchronous rectification or freewheeling; impacts EMI and cross-conduction risk. |
| VGS(th) | 2.0–4.0 V - ensures reliable turn-on with standard 10 V gate drivers while avoiding spurious conduction from noise. |
| ID (TC = 100 °C) | 2.0 A - sets practical continuous current limit in thermally constrained PCB-mounted applications. |
Pinout & Package
IRFI830GPBF is housed in a TO-220 FULLPAK package with integral isolation barrier between drain tab and leads. The molded compound provides 2.5 kVRMS isolation and 4.8 mm creepage from sink to lead, eliminating need for mica washers in commercial-industrial mounting.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives gate drive signal; requires ≤ ±20 V rating; low input capacitance (Ciss = 610 pF) eases driver selection. |
| D (Drain) | High-side power terminal | Connected to primary winding and HV DC bus; electrically isolated from tab; internal drain inductance = 4.5 nH. |
| S (Source) | Power return / reference node | Common return for gate drive and current sensing; source inductance = 7.5 nH affects switching waveform fidelity. |
Key Features
| Feature | Design Value |
|---|---|
| Isolated TO-220 FULLPAK | Eliminates external insulating hardware - reduces BOM count and assembly cost in AC/DC adapters and industrial PSUs. |
| 2.5 kVRMS isolation | Meets reinforced insulation requirements per IEC 60950-1 and IEC 62368-1 without additional barriers. |
| Low RthJC (3.6 °C/W) | Enables higher power density by transferring heat directly from die to heatsink through low-resistance molding compound. |
| 180 mJ single-pulse avalanche energy | Supports robust operation under transformer saturation or output short-circuit conditions without derating. |
| Dynamic dV/dt rating (3.5 V/ns) | Prevents false turn-on during high-slew-rate switching transients in high-frequency flyback topologies. |
Applications
| Industrial AC/DC Power Supplies | Universal Input Flyback Converters |
|---|---|
|
Use Scenario: 24–48 V output, 30–60 W industrial power supply operating from 85–265 VAC input with >10-year field life requirement. IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer via transformer; operates at 65 kHz with ZVS-assisted turn-on. Use Value: Isolation and avalanche rating ensure compliance with EN 62368-1; RDS(on) and Qg jointly enable >85 % efficiency at full load. |
Use Scenario: Compact wall adapter for IoT gateway requiring no external heatsink and UL60950-1 certification. IC Role / Device Role / Timing Role: Self-oscillating or PWM-controlled main switch in discontinuous conduction mode (DCM) flyback. Use Value: TO-220 FULLPAK eliminates mica + washer stack, reducing assembly time and thermal interface resistance by 40 % vs. standard TO-220. |
| LED Driver Power Stages | Offline Battery Charger Circuits |
|
Use Scenario: Constant-current LED driver for street lighting with surge immunity to 4 kV line-to-line per IEC 61000-4-5. IC Role / Device Role / Timing Role: Primary switch handling 400 V DC link; clamped by RC snubber and protected by MOV. Use Value: 2.5 kVRMS isolation prevents creepage failure during surge events; trr < 640 ns limits diode recovery losses. |
Use Scenario: 12 V/2 A sealed lead-acid battery charger with overvoltage and thermal foldback protection. IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback with valley-switching control. Use Value: Low Qgd/Qg ratio improves light-load efficiency; EAS > 180 mJ absorbs energy from transformer leakage during soft-start. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP5NK50ZFP | 500 V, 4.5 A, RDS(on) = 1.4 Ω, but non-isolated TO-220FP; no 2.5 kVRMS rating. | Requires external isolation hardware for reinforced insulation; unsuitable where creepage > 4.8 mm is mandated. | Select when board space permits added insulation layers and thermal performance is prioritized over assembly simplicity. |
| FQP5N50CTF | 500 V, 4.5 A, RDS(on) = 1.2 Ω, TO-220 package with standard isolation (no 2.5 kVRMS test). | Lacks certified high-voltage isolation; not rated for direct heatsink mounting without insulator. | Choose only in non-safety-critical, low-cost consumer designs where regulatory certification is not required. |
Compared with STP5NK50ZFP and FQP5N50CTF, IRFI830GPBF trades slightly higher RDS(on) for integrated 2.5 kVRMS isolation and 4.8 mm creepage - delivering lower system-level BOM cost, faster certification, and reduced thermal interface complexity in industrial and medical power supplies.
Availability
IRFI830GPBF is available at Aetrix Electronics and suitable for industrial AC/DC power supplies, universal-input flyback converters, and offline LED driver power stages requiring stable component supply and long-term lifecycle assurance.
Supply support for IRFI830GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.
The IRFI830GPBF belongs to Vishay's high-voltage isolated MOSFET product line, engineered specifically for safety-critical offline power conversion where reinforced insulation, avalanche ruggedness, and thermal reliability are mandatory.
FAQ
What is the maximum continuous drain current for IRFI830GPBF at 100 °C case temperature?
The IRFI830GPBF supports 2.0 A continuous drain current at TC = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220 FULLPAK package and must be applied in heatsink-constrained designs. Designers should verify junction temperature using RthJC = 3.6 °C/W and actual power dissipation to ensure TJ remains ≤ 150 °C. The IRFI830GPBF datasheet confirms this value under Note "a" in the ID rating section.
Does IRFI830GPBF require an insulating pad when mounted directly to a metal heatsink?
No - the IRFI830GPBF does not require an insulating pad because its TO-220 FULLPAK package incorporates high-dielectric molding compound that delivers 2.5 kVRMS isolation and 4.8 mm creepage distance from drain tab to leads. This built-in isolation replaces traditional mica washers or silicone pads, simplifying mechanical assembly and improving thermal transfer. The IRFI830GPBF specification sheet explicitly states this capability in the FEATURES and DESCRIPTION sections.
What is the typical body diode reverse recovery time (trr) for IRFI830GPBF?
The IRFI830GPBF has a typical body diode reverse recovery time of 320 ns and a maximum of 640 ns at TJ = 25 °C, IF = 3.1 A, and dI/dt = 100 A/μs. This parameter is critical for minimizing switching losses and EMI in flyback and forward converters where the intrinsic diode conducts during dead time. The IRFI830GPBF datasheet reports trr in the "Drain-Source Body Diode Characteristics" table on page 2.
Can IRFI830GPBF be used in avalanche-mode operation?
Yes - the IRFI830GPBF is rated for repetitive avalanche operation with IAR = 3.1 A and EAR = 3.5 mJ, and single-pulse avalanche energy of 180 mJ. These ratings allow safe operation during transient overloads such as transformer saturation or output short circuits without external snubbers. The IRFI830GPBF datasheet validates this capability in the Absolute Maximum Ratings and Specifications tables, with test conditions defined in Notes "a" and "b".
What is the gate threshold voltage range for IRFI830GPBF?
The IRFI830GPBF has a gate-source threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at VDS = VGS and ID = 250 μA. This ensures reliable turn-on with standard 10 V gate drivers while providing noise immunity against false triggering. The IRFI830GPBF specification sheet lists this parameter in the "Static" section of the Electrical Characteristics table, confirming compatibility with industry-standard logic-level and TTL-compatible drivers.
IRFI830GPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack, Isolated Tab
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.5Ohm @ 1.9A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 610 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 35W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-3
IRFI830GPBF FAQ
1.How can I place an order for IRFI830GPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFI830GPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFI830GPBF reliable?
The price and inventory of IRFI830GPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFI830GPBF is usually 5 days.
3.What payment methods are accepted for IRFI830GPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFI830GPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFI830GPBF?
IRFI830GPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFI830GPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFI830GPBF?
For technical support, including IRFI830GPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFI830GPBF requirements.
6.How does Aetrix verify that IRFI830GPBF is sourced from the original manufacturer or authorized distributors?
All IRFI830GPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFI830GPBF meets industry standards.
7.What is the process for return or replacement of IRFI830GPBF?
All IRFI830GPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFI830GPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFI830GPBF part is unused and in its original packaging.
Return procedure for IRFI830GPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRFI830GPBF Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
