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Vishay Siliconix IRFI840G
- Part No.:
- IRFI840G
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack, Isolated Tab
- Datasheet:
-
IRFI840G.pdf
- Description:
- MOSFET N-CH 500V 4.6A TO220-3
- Quantity:
- Payment:
- Shipping:
Inventory:2,498
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Product details
Overview
IRFI840G from Vishay Siliconix is a 500 V, 4.6 A N-channel power MOSFET in TO-220 FULLPAK package with isolated tab, 0.85 Ω RDS(on) at VGS = 10 V, 67 nC total gate charge, and 2.5 kVRMS isolation rating - designed for high-voltage DC-DC converters, AC-DC flyback supplies, and industrial motor control circuits requiring reinforced insulation.
For engineers reviewing the IRFI840G datasheet, IRFI840G pinout, IRFI840G application, or IRFI840G equivalent, this part supports high-reliability switching in isolated topologies where creepage (4.8 mm), dV/dt immunity (3.5 V/ns), and avalanche ruggedness (370 mJ single-pulse) are critical selection criteria.
Technical Context
The IRFI840G employs a third-generation planar vertical DMOS structure optimized for fast switching and high-voltage blocking. Its isolated TO-220 FULLPAK package integrates a thermally efficient molding compound that delivers 3.1 °C/W junction-to-case thermal resistance while maintaining 2.5 kVRMS isolation between drain and heatsink.
It features a robust body diode with 340–680 ns reverse recovery time and 1.8–2.6 μC Qrr, enabling reliable operation in hard-switched inductive loads. The device supports repetitive avalanche up to 4.6 A and exhibits stable gate threshold voltage (2.0–4.0 V) across –55 to +150 °C operating range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - Enables use in 400 V DC bus systems with 25 % safety margin for transient overvoltage. |
| RDS(on) | 0.85 Ω @ VGS = 10 V - Limits conduction loss to ≤11 W at 4.6 A continuous current (TC = 25 °C). |
| Qg | 67 nC - Determines gate drive power requirement; compatible with standard 1 A peak gate drivers. |
| EAS | 370 mJ - Supports unclamped inductive switching without failure in flyback or relay-driving applications. |
| RthJC | 3.1 °C/W - Enables 40 W power dissipation with ≤125 °C temperature rise above heatsink (TC = 25 °C). |
| dV/dt Rating | 3.5 V/ns - Resists false turn-on during high-slew-rate noise transients in SMPS primary-side switching. |
| ID (TC = 100 °C) | 2.9 A - Specifies usable current derating for sustained operation in enclosed industrial enclosures. |
Pinout & Package
IRFI840G uses the TO-220 FULLPAK package: isolated metal tab (drain-connected), 3-pin through-hole outline with 2.54 mm lead pitch, 15.87 mm length, 10.10 mm width, and 4.70 mm height. The molded case provides 4.8 mm sink-to-lead creepage distance and 2.5 kVRMS isolation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Lead 1 (left) | Source (S) | Low-side reference node; connects directly to PCB ground plane or source return path. |
| Lead 2 (center) | Gate (G) | High-impedance control input; requires <100 nA leakage current handling and 10 V drive for full enhancement. |
| Lead 3 (right) | Drain (D) | High-voltage power node; internally bonded to isolated metal tab for heatsink mounting without insulator. |
Key Features
| Feature | Design Value |
|---|---|
| Isolated TO-220 FULLPAK | Eliminates need for mica washers or silicone pads - reduces thermal interface resistance by ~30 % vs. standard TO-220 with insulator. |
| 2.5 kVRMS Isolation | Meets reinforced insulation requirements per IEC 60950-1 and IEC 62368-1 for primary-secondary barrier in offline power supplies. |
| Dynamic dV/dt Rating | 3.5 V/ns ensures immunity to parasitic turn-on during fast voltage transitions in high-frequency switchers. |
| Low RthJC | 3.1 °C/W enables direct mounting to aluminum heatsinks without thermal paste degradation concerns in long-life industrial designs. |
| Avalanche Ruggedness | 370 mJ single-pulse energy rating allows safe operation under inductive load interruption without external snubbers. |
Applications
| AC-DC Flyback Converter | Industrial Motor Starter |
|---|---|
Use Scenario: Primary-side switch in 30–100 W offline flyback power supply for PLC I/O modules. IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer to secondary winding; operates at 65–130 kHz. Use Value: 500 V rating accommodates 380 VAC rectified peaks with margin; isolated tab simplifies creepage compliance on compact PCBs. |
Use Scenario: Solid-state relay replacement for 3-phase motor contactor pre-charge and soft-start sequencing. IC Role / Device Role / Timing Role: High-side or low-side power switch controlling inrush current into motor windings during startup. Use Value: 4.6 A continuous current and 18 A pulsed rating handle locked-rotor surges; avalanche capability prevents failure during abrupt load disconnection. |
| DC-DC Boost Converter | Capacitor Discharge Circuit |
Use Scenario: Boost stage in battery-powered test equipment generating 400 V bias for photomultiplier tubes. IC Role / Device Role / Timing Role: Synchronous or non-synchronous high-side switch regulating output voltage via PWM duty cycle. Use Value: 0.85 Ω RDS(on) minimizes conduction loss at 2–3 A load; low Qgd/Qg ratio improves switching efficiency above 100 kHz. |
Use Scenario: Triggered discharge of high-energy storage capacitors in laser pulse generators and defibrillator simulators. IC Role / Device Role / Timing Role: Fast-turning main discharge switch activated by logic-level gate signal to initiate controlled energy release. Use Value: 340–680 ns body diode trr ensures clean turn-off; 2.5 kVRMS isolation protects control circuitry from high-voltage transients during discharge. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP5NK50ZFP | 500 V, 4.5 A, RDS(on) = 1.2 Ω, Zener-protected gate, TO-220FP package (non-isolated tab) | Requires external isolation hardware for creepage compliance; lower dV/dt rating (2.5 V/ns) | Prefer when cost sensitivity outweighs isolation integration; verify heatsink insulation separately. |
| FQP5N50CTU | 500 V, 4.5 A, RDS(on) = 1.4 Ω, standard TO-220, no isolation rating | Not rated for reinforced insulation; unsuitable for primary-secondary barrier applications | Select only for non-isolated DC-DC stages or low-risk industrial controls where creepage is managed externally. |
Compared with STP5NK50ZFP and FQP5N50CTU, the IRFI840G uniquely delivers certified 2.5 kVRMS isolation and 4.8 mm creepage in a drop-in TO-220 footprint - eliminating insulator BOM items and reducing thermal resistance by up to 25 % in thermally constrained designs.
Availability
IRFI840G is available at Aetrix Electronics and suitable for AC-DC flyback converters, industrial motor starters, and capacitor discharge circuits requiring stable component supply, long-term lifecycle support, and traceable sourcing from qualified manufacturing facilities.
Supply support for IRFI840G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRFI840G belongs to Vishay's third-generation high-voltage power MOSFET family engineered for ruggedized switching in isolated power conversion and motor control - emphasizing avalanche tolerance, thermal efficiency, and reinforced insulation integrity.
FAQ
What is the maximum continuous drain current for IRFI840G at 100 °C case temperature?
The IRFI840G supports 2.9 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations of the TO-220 FULLPAK package and must be used for thermal design validation in enclosed environments. Exceeding this current risks exceeding the 150 °C maximum junction temperature, potentially triggering thermal shutdown or long-term reliability degradation in the IRFI840G.
Does IRFI840G have an integrated body diode, and what are its key parameters?
Yes, the IRFI840G includes an integral reverse p–n junction body diode. Key parameters include 4.6 A continuous forward current (IS), 18 A pulsed forward current (ISM), 2.0 V forward voltage (VSD) at 4.6 A and 25 °C, and 340–680 ns reverse recovery time (trr) under specified test conditions. These values are confirmed in the Drain-Source Body Diode Characteristics section of the IRFI840G datasheet.
Can IRFI840G be used as a direct replacement for standard TO-220 MOSFETs without layout changes?
No - although the IRFI840G shares the same 3-pin TO-220 outline, its FULLPAK variant features an electrically isolated metal tab bonded to the drain. Unlike standard TO-220 parts, it does not require external insulating hardware but mandates verification that the heatsink remains at drain potential. Layout changes may be needed to ensure proper grounding and creepage compliance when substituting into legacy designs originally using non-isolated devices.
What is the gate-source threshold voltage range for IRFI840G, and how does it affect drive requirements?
The IRFI840G has a gate-source threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at TJ = 25 °C, measured at ID = 250 μA. This indicates it is a standard-threshold MOSFET requiring ≥10 V gate drive for full enhancement and minimal RDS(on). Drive circuits must supply sufficient voltage headroom and current to charge the 67 nC total gate charge within required switching times, especially in high-frequency applications involving the IRFI840G.
Is IRFI840G compliant with lead-free soldering standards, and what is its peak reflow temperature?
Yes, the IRFI840G is lead (Pb)-free and RoHS-compliant, with ordering designation IRFI840GPbF. Its recommended peak soldering temperature is 300 °C for 10 seconds, as stated in the Absolute Maximum Ratings table. This aligns with IPC/JEDEC J-STD-020 moisture sensitivity level (MSL) requirements for through-hole components, ensuring compatibility with standard lead-free reflow and wave soldering processes used for the IRFI840G.
IRFI840G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack, Isolated Tab
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 850mOhm @ 2.8A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 67 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1300 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 40W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-3
IRFI840G FAQ
1.How can I place an order for IRFI840G through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFI840G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFI840G reliable?
The price and inventory of IRFI840G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFI840G is usually 5 days.
3.What payment methods are accepted for IRFI840G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFI840G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFI840G?
IRFI840G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFI840G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFI840G?
For technical support, including IRFI840G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFI840G requirements.
6.How does Aetrix verify that IRFI840G is sourced from the original manufacturer or authorized distributors?
All IRFI840G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFI840G meets industry standards.
7.What is the process for return or replacement of IRFI840G?
All IRFI840G units undergo pre-shipment inspection (PSI). If there is an issue with IRFI840G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFI840G part is unused and in its original packaging.
Return procedure for IRFI840G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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