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Vishay Siliconix IRFI840GPBF
- Part No.:
- IRFI840GPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack, Isolated Tab
- Datasheet:
-
IRFI840GPBF.pdf
- Description:
- MOSFET N-CH 500V 4.6A TO220-3
- Quantity:
- Payment:
- Shipping:
Inventory:469
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Product details
Overview
IRFI840GPBF from Vishay Siliconix is a 500 V, 4.6 A N-channel power MOSFET in TO-220 FULLPAK isolated package, featuring 0.85 Ω RDS(on) at VGS = 10 V, 67 nC total gate charge, and 2.5 kVRMS isolation for high-voltage industrial switching applications including AC-DC PFC stages and offline SMPS primary-side switches.
For engineers reviewing the IRFI840GPBF datasheet, IRFI840GPBF pinout, IRFI840GPBF application, or IRFI840GPBF equivalent, key selection criteria include its isolated TO-220 FULLPAK thermal performance (RthJC = 3.1 °C/W), avalanche ruggedness (EAS = 370 mJ), and body diode recovery characteristics (trr = 340–680 ns) in high-reliability power conversion designs.
Technical Context
This third-generation high-voltage MOSFET uses planar V-groove technology optimized for fast switching with low conduction loss. Its isolated TO-220 FULLPAK construction eliminates external insulation hardware while maintaining 4.8 mm sink-to-lead creepage distance and 2.5 kVRMS isolation rating per IEC 60950-1.
The device supports unclamped inductive switching with repetitive avalanche current up to 4.6 A and single-pulse energy of 370 mJ. Dynamic dV/dt capability of 3.5 V/ns ensures robust operation in noisy high-side switching topologies without spurious turn-on.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - Supports mains-referenced switching in 230 VAC input systems with margin for voltage transients. |
| RDS(on) | 0.85 Ω @ VGS = 10 V - Enables <4.6 W conduction loss at 4.6 A continuous drain current at TC = 25 °C. |
| Qg | 67 nC - Determines gate drive power requirement; compatible with standard 10 V logic-level drivers in hard-switched converters. |
| EAS | 370 mJ - Allows safe operation under unclamped inductive load conditions without external snubbers in relay or solenoid drivers. |
| RthJC | 3.1 °C/W - Enables 40 W power dissipation with ≤125 °C junction rise above heatsink at TC = 25 °C. |
| trr | 340–680 ns - Defines reverse recovery window during commutation; impacts switching loss and EMI in bridge configurations. |
| VGS(th) | 2.0–4.0 V - Ensures reliable turn-on with standard 10 V gate drive while avoiding accidental activation near 0 V. |
Pinout & Package
IRFI840GPBF is housed in a TO-220 FULLPAK package with integral isolation barrier between drain tab and leads. The molded compound provides 2.5 kVRMS isolation and low thermal resistance (3.1 °C/W) from junction to case, enabling direct mounting to heatsinks without insulating washers.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Receives voltage-controlled signal to modulate channel conductivity; requires ≤±20 V drive and 67 nC charge for full enhancement. |
| D (Drain) | High-side power terminal | Connected to high-voltage rail (up to 500 V); electrically isolated from tab and leads; serves as heat-sinking surface. |
| S (Source) | Reference/return terminal | Provides return path for load current; defines ground reference for gate drive; tied to source of body diode. |
Key Features
| Feature | Design Value |
|---|---|
| Isolated TO-220 FULLPAK | Eliminates need for mica insulators or thermal pads-reduces assembly cost and thermal interface resistance by integrating 2.5 kVRMS isolation. |
| High avalanche energy rating | 370 mJ single-pulse capability enables robust operation in inductive load switching without external clamping circuits. |
| Low RthJC | 3.1 °C/W thermal resistance allows 40 W dissipation with minimal heatsink size-critical for space-constrained industrial power supplies. |
| Controlled dV/dt immunity | 3.5 V/ns rated peak diode recovery dV/dt prevents false triggering during fast voltage transitions in half-bridge or LLC resonant topologies. |
| Body diode with defined trr | 340–680 ns reverse recovery time supports synchronous rectification evaluation and aids ZVS design in resonant converters. |
Applications
| Industrial Motor Drives | AC-DC Power Factor Correction |
|---|---|
|
Use Scenario: Driving IGBT gate drivers or controlling auxiliary power rails in variable-frequency drives. IC Role / Device Role / Timing Role: High-side switch for isolated auxiliary supply generation using flyback topology. Use Value: 2.5 kVRMS isolation and 4.8 mm creepage enable direct connection to 400 VDC bus without additional insulation layers. |
Use Scenario: Boost switch in active PFC front-end for industrial UPS and server PSUs. IC Role / Device Role / Timing Role: Main switching element handling 500 V DC link voltage and 4.6 A average current. Use Value: 0.85 Ω RDS(on) and 67 nC Qg balance conduction and switching losses at 65–100 kHz operation. |
| Offline Switch-Mode Power Supplies | High-Voltage Relay/Solenoid Drivers |
|
Use Scenario: Primary-side switch in 50–100 W open-frame SMPS for factory automation controllers. IC Role / Device Role / Timing Role: Hard-switched MOSFET in discontinuous conduction mode (DCM) flyback converter. Use Value: 370 mJ EAS withstands leakage inductance spikes during MOSFET turn-off without snubber circuitry. |
Use Scenario: Solid-state replacement for electromechanical relays in HVAC control panels. IC Role / Device Role / Timing Role: Low-duty-cycle, high-voltage switch driving 24–48 VDC coils from 300–400 VDC bus. Use Value: Repetitive avalanche rating (IAR = 4.6 A) ensures reliability under repeated inductive turn-off stress. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP5NK50ZFP | 500 V, 4.5 A, RDS(on) = 1.2 Ω, Zener-protected gate, TO-220FP package (non-isolated) | Requires external isolation hardware for high-side mounting; lower dV/dt immunity (2.5 V/ns) | Preferred where cost sensitivity outweighs isolation integration; verify heatsink insulation separately. |
| FQP5N50CTF | 500 V, 4.5 A, RDS(on) = 1.4 Ω, standard TO-220, no isolation rating | Lacks certified 2.5 kVRMS isolation; creepage <3.0 mm; unsuitable for safety-critical mains-referenced layouts | Select only for low-risk, double-insulated secondary-side switching where isolation is provided elsewhere in system. |
Compared with STP5NK50ZFP and FQP5N50CTF, IRFI840GPBF delivers integrated isolation, higher dV/dt immunity, and lower RDS(on), making it optimal for compact, safety-compliant high-voltage switch designs where board space and BOM count are constrained.
Availability
IRFI840GPBF is available at Aetrix Electronics and suitable for industrial motor drives, AC-DC power factor correction, and offline switch-mode power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing from qualified manufacturing facilities.
Supply support for IRFI840GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial, automotive, and computing applications.
The IRFI840GPBF belongs to Vishay's high-voltage isolated MOSFET product line, engineered for robustness in mains-connected power conversion systems where safety isolation, thermal efficiency, and avalanche tolerance are critical.
FAQ
What is the maximum continuous drain current for IRFI840GPBF at 100 °C case temperature?
The IRFI840GPBF supports 2.9 A continuous drain current at TC = 100 °C, derated linearly from 4.6 A at 25 °C using a 0.32 W/°C factor. This value reflects thermal limits of the TO-220 FULLPAK package and must be validated against actual heatsink performance and ambient conditions in the final IRFI840GPBF application layout.
Does IRFI840GPBF require external gate resistors for reliable switching?
Yes-IRFI840GPBF benefits from a series gate resistor (typically 5–25 Ω) to control dI/dt and suppress oscillation during turn-on/turn-off. The 67 nC total gate charge and 34 nC Qgd make it sensitive to parasitic inductance; proper gate loop layout and resistor selection are essential to maintain 3.5 V/ns dV/dt immunity and prevent shoot-through in bridge configurations using IRFI840GPBF.
Can IRFI840GPBF be used in place of a standard TO-220 MOSFET without layout changes?
No-IRFI840GPBF uses the TO-220 FULLPAK outline with internal isolation, but its drain tab is electrically active and thermally coupled to the die. Unlike standard TO-220, the tab must be mounted directly to a heatsink without insulating hardware. PCB footprint matches TO-220 but thermal and safety design rules differ significantly for IRFI840GPBF.
What is the body diode forward voltage of IRFI840GPBF at rated current?
The IRFI840GPBF body diode exhibits VSD = 2.0 V maximum at IS = 4.6 A and TJ = 25 °C with VGS = 0 V. This forward drop impacts conduction loss during freewheeling intervals in synchronous or quasi-resonant topologies and should be included in thermal modeling for IRFI840GPBF-based designs.
Is IRFI840GPBF RoHS-compliant and lead-free?
Yes-IRFI840GPBF is lead (Pb)-free and RoHS-compliant per Vishay documentation S21-0975-Rev. C. The "PbF" suffix confirms compliance with EU Directive 2011/65/EU, and the device meets JEDEC J-STD-020 moisture sensitivity level (MSL) requirements for surface-mount reflow processing without special handling for IRFI840GPBF.
IRFI840GPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack, Isolated Tab
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 850mOhm @ 2.8A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 67 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1300 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 40W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-3
IRFI840GPBF FAQ
1.How can I place an order for IRFI840GPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFI840GPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFI840GPBF reliable?
The price and inventory of IRFI840GPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFI840GPBF is usually 5 days.
3.What payment methods are accepted for IRFI840GPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFI840GPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFI840GPBF?
IRFI840GPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFI840GPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFI840GPBF?
For technical support, including IRFI840GPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFI840GPBF requirements.
6.How does Aetrix verify that IRFI840GPBF is sourced from the original manufacturer or authorized distributors?
All IRFI840GPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFI840GPBF meets industry standards.
7.What is the process for return or replacement of IRFI840GPBF?
All IRFI840GPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFI840GPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFI840GPBF part is unused and in its original packaging.
Return procedure for IRFI840GPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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