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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFI9610GPBF

Name: IRFI9610GPBF
Brand: Vishay Siliconix
SKU: IRFI9610GPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFI9610GPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack, Isolated Tab

Datasheet:: IRFI9610GPBF.pdf

Description:: MOSFET P-CH 200V 2A TO220-3

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Product details

Overview

IRFI9610GPBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in TO-220 FULLPAK package, rated for -200 V drain-source voltage, 3.0 Ω on-resistance at V_GS = -10 V, and 2.0 A continuous drain current at T_C = 25 °C. It delivers high-voltage isolation (2.5 kV_RMS, 60 s), low thermal resistance (R_thJC = 4.6 °C/W), and robust avalanche capability (E_AS = 100 mJ), targeting high-reliability DC-DC converters and industrial motor control circuits.

For engineers reviewing the IRFI9610GPBF datasheet, IRFI9610GPBF pinout, IRFI9610GPBF application, or IRFI9610GPBF equivalent, key selection criteria include its isolated TO-220 FULLPAK construction, -200 V blocking rating, body diode recovery time (t_rr = 130–200 ns), gate charge profile (Q_g = 13 nC), and suitability for high-side switching in offline power supplies with minimal heatsink requirements.

Technical Context

This device operates as a high-voltage, low-current P-channel switch with intrinsic fast-recovery body diode (t_rr ≤ 200 ns, Q_rr ≤ 1050 µC) and dynamic dV/dt immunity (-11 V/ns). Its isolated package eliminates external insulation hardware, enabling direct mounting to heatsinks via single-screw fixation while maintaining 4.8 mm sink-to-lead creepage distance.

The MOSFET features a third-generation silicon process optimized for ruggedness and cost-effectiveness, with specified linear derating (0.22 W/°C), repetitive avalanche rating (I_AR = -2.0 A), and gate threshold voltage range of -2.0 V to -4.0 V - supporting reliable turn-on under wide temperature and drive conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-200 V - supports high-side switching in 170 V AC rectified rails without derating.
R_DS(on)	3.0 Ω @ V_GS = -10 V - enables <1.2 W conduction loss at 2.0 A, reducing heatsink size.
Q_g	13 nC - determines gate driver power requirement and switching speed in hard-switched topologies.
E_AS	100 mJ - withstands unclamped inductive energy during fault events without failure.
t_rr	130–200 ns - limits reverse recovery losses and EMI in flyback and buck-derived converters.
R_thJC	4.6 °C/W - allows efficient thermal transfer to heatsink, enabling 27 W dissipation at ΔT = 125 °C.
V_GS(th)	-2.0 to -4.0 V - ensures predictable turn-on with standard -10 V gate drivers and margin against noise-induced conduction.

Pinout & Package

IRFI9610GPBF uses the TO-220 FULLPAK package: an isolated, epoxy-molded variant of TO-220 with integral high-voltage insulation (2.5 kV_RMS) between drain tab and leads, eliminating need for mica washers. Dimensions conform to Vishay specification 91359 (Option 1 or 2), with 4.8 mm minimum creepage and 15.87 mm nominal length.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	High-voltage power output / heat sink interface	Exposed copper drain tab serves as both current path and primary thermal interface; electrically isolated from leads.
Source	Reference node for gate drive and load return	Connected internally to substrate; defines V_GS reference; carries full load current in high-side configuration.
Gate	Control input for channel conduction	High-impedance terminal requiring negative bias relative to source to turn on; sensitive to ESD (±20 V max).

Key Features

Feature	Design Value
Isolated TO-220 FULLPAK package	Eliminates external insulation hardware and reduces assembly steps in commercial-industrial power supplies.
2.5 kV_RMS isolation (60 s)	Meets reinforced insulation requirements for Class I equipment operating up to 250 V AC mains.
Low R_thJC = 4.6 °C/W	Enables compact thermal design with single-screw heatsink mounting and no thermal paste required in many cases.
Dynamic dV/dt rating = -11 V/ns	Prevents false turn-on during fast voltage transients in high-frequency switching applications.
Body diode t_rr ≤ 200 ns	Reduces switching losses and voltage overshoot in discontinuous conduction mode (DCM) flyback converters.

Applications

Industrial Motor Drives	AC-DC Power Supplies
Use Scenario: High-side switching in 3-phase inverter half-bridge stages for 24–48 V DC-fed brushless DC motors. IC Role / Device Role / Timing Role: P-channel high-side switch controlling phase voltage; operates in hard-switched PWM mode at ≤20 kHz. Use Value: Isolated package simplifies PCB layout by removing gate-drive level-shifting and insulation barriers; -200 V rating accommodates bus voltage spikes.	Use Scenario: Primary-side active clamp or auxiliary supply switch in offline flyback converters delivering 5–12 V outputs. IC Role / Device Role / Timing Role: High-voltage P-channel switch managing clamping energy or bias winding regulation. Use Value: 100 mJ avalanche energy rating protects against transformer leakage inductance spikes; fast body diode enables synchronous rectification support.
DC-DC Converters	Lighting Ballasts
Use Scenario: Input-stage high-side switch in isolated forward or push-pull DC-DC converters for telecom and industrial systems. IC Role / Device Role / Timing Role: Main power switch handling 200 V DC input; driven by isolated gate driver with -10 V bias. Use Value: Low Q_g (13 nC) minimizes gate driver losses; R_DS(on) stability over temperature ensures consistent efficiency across -40 to +125 °C ambient.	Use Scenario: Lamp ignition and current regulation in electronic HID ballasts for street lighting and industrial fixtures. IC Role / Device Role / Timing Role: High-voltage switch controlling lamp preheat and run phases; subjected to repeated high-dV/dt transitions. Use Value: -11 V/ns dV/dt immunity prevents spurious turn-on during arc striking; ruggedized die handles repetitive avalanche stress during lamp cycling.

Industrial Motor Drives

AC-DC Power Supplies

Use Scenario: High-side switching in 3-phase inverter half-bridge stages for 24–48 V DC-fed brushless DC motors.

IC Role / Device Role / Timing Role: P-channel high-side switch controlling phase voltage; operates in hard-switched PWM mode at ≤20 kHz.

Use Value: Isolated package simplifies PCB layout by removing gate-drive level-shifting and insulation barriers; -200 V rating accommodates bus voltage spikes.

Use Scenario: Primary-side active clamp or auxiliary supply switch in offline flyback converters delivering 5–12 V outputs.

IC Role / Device Role / Timing Role: High-voltage P-channel switch managing clamping energy or bias winding regulation.

Use Value: 100 mJ avalanche energy rating protects against transformer leakage inductance spikes; fast body diode enables synchronous rectification support.

DC-DC Converters

Lighting Ballasts

Use Scenario: Input-stage high-side switch in isolated forward or push-pull DC-DC converters for telecom and industrial systems.

IC Role / Device Role / Timing Role: Main power switch handling 200 V DC input; driven by isolated gate driver with -10 V bias.

Use Value: Low Q_g (13 nC) minimizes gate driver losses; R_DS(on) stability over temperature ensures consistent efficiency across -40 to +125 °C ambient.

Use Scenario: Lamp ignition and current regulation in electronic HID ballasts for street lighting and industrial fixtures.

IC Role / Device Role / Timing Role: High-voltage switch controlling lamp preheat and run phases; subjected to repeated high-dV/dt transitions.

Use Value: -11 V/ns dV/dt immunity prevents spurious turn-on during arc striking; ruggedized die handles repetitive avalanche stress during lamp cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20PF06	-60 V V_DS, 0.12 Ω R_DS(on), TO-220 non-isolated	Limited to low-voltage DC systems; requires external insulation for AC-coupled designs	Select when lower on-resistance and cost are prioritized over high-voltage isolation and 200 V capability.
IXTP20P20P	-200 V V_DS, 4.5 Ω R_DS(on), TO-220 non-isolated, higher Q_g (22 nC)	No integrated isolation; needs mica washer and mounting hardware for safe heatsink attachment	Choose if legacy board layout uses standard TO-220 and isolation can be added externally; verify thermal interface compliance.

Compared with STP20PF06 and IXTP20P20P, IRFI9610GPBF uniquely combines 200 V rating, 2.5 kV isolation, and TO-220 FULLPAK packaging - enabling simplified, safer, and more compact high-side switch implementations in AC-input and high-reliability industrial systems without redesigning mechanical mounting or insulation schemes.

Availability

IRFI9610GPBF is available at Aetrix Electronics and suitable for industrial motor drives, AC-DC power supplies, DC-DC converters, and lighting ballasts requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from qualified manufacturing facilities.

Supply support for IRFI9610GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.

The IRFI9610GPBF belongs to Vishay's high-voltage P-channel power MOSFET product line, designed specifically for isolated high-side switching in industrial power conversion where safety, thermal performance, and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current rating for IRFI9610GPBF at 100 °C case temperature?

The IRFI9610GPBF has a continuous drain current rating of -1.3 A at T_C = 100 °C, reflecting thermal derating from its 2.0 A rating at 25 °C. This value is defined in the Absolute Maximum Ratings table and accounts for junction temperature limits and package thermal resistance. Designers must ensure heatsink design maintains T_C ≤ 100 °C to sustain this current in continuous operation. The IRFI9610GPBF datasheet specifies a linear derating factor of 0.22 W/°C above 25 °C.

Does IRFI9610GPBF require external insulation when mounted to a heatsink?

No, IRFI9610GPBF does not require external insulation when mounted to a heatsink because it uses the TO-220 FULLPAK package with 2.5 kV_RMS isolation between the drain tab and leads. This built-in isolation replaces traditional mica washers or insulating pads. The device achieves 4.8 mm sink-to-lead creepage distance, satisfying reinforced insulation requirements for many industrial applications. The IRFI9610GPBF mounting torque specification is 0.6 Nm for M3 screws.

What is the typical gate threshold voltage range for IRFI9610GPBF, and how does it affect drive circuit design?

The IRFI9610GPBF has a gate threshold voltage range of -2.0 V to -4.0 V at T_J = 25 °C, measured at I_D = -250 µA. This means reliable turn-on occurs with V_GS ≤ -4.0 V, while conduction ceases above -2.0 V. Drive circuits must deliver at least -10 V to ensure full enhancement and low R_DS(on); logic-level compatibility is not supported. The IRFI9610GPBF gate leakage is ±100 nA at ±20 V, confirming low drive current demand.

Can IRFI9610GPBF be used in avalanche-rated applications, and what is its single-pulse energy limit?

Yes, IRFI9610GPBF is rated for repetitive and single-pulse avalanche operation. Its single-pulse avalanche energy (E_AS) is 100 mJ under test conditions of L = 51 mH, R_G = 25 Ω, and I_AS = -2.0 A. This rating enables use in inductive switching circuits where voltage spikes exceed V_DS, such as relay drivers or flyback snubbers. The IRFI9610GPBF also supports repetitive avalanche current (I_AR) of -2.0 A, verified per Figure 12.

How does the body diode performance of IRFI9610GPBF compare to standard rectifiers in flyback converter applications?

The IRFI9610GPBF body diode has t_rr = 130–200 ns and Q_rr = 700–1050 µC at T_J = 25 °C, making it faster than general-purpose rectifiers but slower than dedicated ultrafast diodes. In DCM flyback converters, this enables acceptable efficiency without external diode replacement, especially where space or cost constraints exist. The IRFI9610GPBF body diode forward voltage is -5.8 V at -2.0 A, which is higher than Schottky diodes but acceptable for low-duty-cycle auxiliary paths.

IRFI9610GPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack, Isolated Tab

Packaging:: Tube

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3Ohm @ 1.2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 180 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 27W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

IRFI9610GPBF FAQ

1.How can I place an order for IRFI9610GPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFI9610GPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFI9610GPBF reliable?

The price and inventory of IRFI9610GPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFI9610GPBF is usually 5 days.

3.What payment methods are accepted for IRFI9610GPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFI9610GPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFI9610GPBF?

IRFI9610GPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFI9610GPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFI9610GPBF?

For technical support, including IRFI9610GPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFI9610GPBF requirements.

6.How does Aetrix verify that IRFI9610GPBF is sourced from the original manufacturer or authorized distributors?

All IRFI9610GPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFI9610GPBF meets industry standards.

7.What is the process for return or replacement of IRFI9610GPBF?

All IRFI9610GPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFI9610GPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFI9610GPBF part is unused and in its original packaging.

Return procedure for IRFI9610GPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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