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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFI9630G

Name: IRFI9630G
Brand: Vishay Siliconix
SKU: IRFI9630G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFI9630G

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack, Isolated Tab

Datasheet:: IRFI9630G.pdf

Description:: MOSFET P-CH 200V 4.3A TO220-3

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Product details

Overview

IRFI9630G from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in TO-220 FULLPAK package, rated for -200 V V_DS, 0.80 Ω R_DS(on) at V_GS = -10 V, and 35 W power dissipation at T_C = 25 °C. It delivers isolated mounting capability (2.5 kV_RMS, 60 s), low thermal resistance (R_thJC = 3.6 °C/W), and robust avalanche performance (E_AS = 480 mJ), enabling use in high-voltage DC-DC converters and industrial motor control.

For engineers reviewing the IRFI9630G datasheet, IRFI9630G pinout, IRFI9630G application, or IRFI9630G equivalent, key selection criteria include its isolated TO-220 FULLPAK package, -200 V blocking rating, body diode recovery time (t_rr = 200–300 ns), gate charge profile (Q_g = 29 nC), and thermal derating behavior across -55 to +150 °C junction range.

Technical Context

This device operates as a high-voltage, medium-current P-channel switch with intrinsic body diode conduction. Its isolated TO-220 FULLPAK construction eliminates need for external insulators, while dynamic dV/dt rating (-5.0 V/ns) and unclamped inductive switching capability support reliable operation in hard-switched topologies.

The MOSFET features fast turn-on delay (12 ns) and fall time (24 ns) under defined test conditions (V_DD = -100 V, I_D = -6.5 A, R_G = 12 Ω), with gate-drain charge (Q_gd = 15 nC) and reverse transfer capacitance (C_rss = 40 pF) indicating moderate Miller effect - critical for gate drive sizing in high-frequency applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-200 V - supports high-side switching in up to 200 V DC bus systems without series stacking
R_DS(on)	0.80 Ω @ V_GS = -10 V - enables ≤3.4 W conduction loss at -4.3 A continuous drain current
Q_g	29 nC - determines minimum gate driver current requirement (~1.45 A peak for 20 ns rise)
E_AS	480 mJ - allows safe single-pulse energy absorption during inductive load switching
R_thJC	3.6 °C/W - permits direct heatsink mounting with predictable thermal drop from junction to case
t_rr	200–300 ns - defines minimum dead-time needed to prevent shoot-through in synchronous rectification
I_D (T_C = 100 °C)	-2.7 A - sets practical continuous current limit in compact heatsink designs

Pinout & Package

IRFI9630G uses the TO-220 FULLPAK package: an isolated, thermally enhanced variant of TO-220 with molded-in creepage distance (4.8 mm sink-to-lead) and 2.5 kV_RMS isolation. The tab is electrically connected to the drain terminal and serves as both thermal path and high-voltage node.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	High-voltage power output / heatsink interface	Electrically active drain terminal; must be insulated from chassis unless referenced to system ground; primary thermal path
Source	Power return / reference node for gate drive	Common node for load return path; gate-source voltage referenced here; carries full load current
Gate	Control input for channel modulation	High-impedance MOS control terminal; requires negative voltage relative to source to turn on; sensitive to ESD

Key Features

Feature	Design Value
Isolated TO-220 FULLPAK package	Eliminates need for mica washers or insulating sleeves in commercial-industrial mounting
2.5 kV_RMS isolation (60 s)	Enables direct mounting to grounded heatsinks in high-voltage AC/DC front-ends and offline SMPS
Low R_thJC = 3.6 °C/W	Reduces thermal bottleneck between die and heatsink, improving power density vs. standard TO-220
Dynamic dV/dt rating = -5.0 V/ns	Ensures reliable operation under fast-rising drain transients without spurious turn-on
Body diode t_rr = 200–300 ns	Supports quasi-resonant and phase-shifted full-bridge topologies requiring controlled reverse recovery

Applications

Industrial Motor Drives	High-Voltage DC-DC Converters
Use Scenario: Half-bridge high-side switch in 100–200 V DC-fed BLDC motor controllers. IC Role / Device Role / Timing Role: P-channel high-side power switch controlling phase voltage delivery; body diode provides freewheeling path during PWM off-time. Use Value: Isolated tab enables direct heatsink mounting without insulation hardware, reducing BOM cost and assembly steps.	Use Scenario: Synchronous rectifier in isolated flyback or forward converter operating from 170 VDC input (rectified 120 VAC). IC Role / Device Role / Timing Role: Secondary-side P-channel MOSFET replacing Schottky diode to reduce conduction losses. Use Value: -200 V V_DS rating accommodates reflected voltage spikes; 0.80 Ω R_DS(on) cuts rectifier losses by >40% vs. 40 V Schottky at 3 A.
AC-DC Power Supplies	Uninterruptible Power Systems
Use Scenario: High-side switch in active clamp circuitry for LLC resonant converters. IC Role / Device Role / Timing Role: Clamping switch absorbing leakage inductance energy during primary switch transition. Use Value: 480 mJ single-pulse avalanche energy ensures safe clamping without snubber networks.	Use Scenario: Battery disconnect switch in 48–110 V DC backup systems with galvanic isolation requirements. IC Role / Device Role / Timing Role: Solid-state high-side isolation switch enabling fail-safe battery isolation during fault conditions. Use Value: 2.5 kV_RMS isolation and -55 to +150 °C operating range support long-term reliability in mission-critical UPS environments.

Industrial Motor Drives

High-Voltage DC-DC Converters

Use Scenario: Half-bridge high-side switch in 100–200 V DC-fed BLDC motor controllers.

IC Role / Device Role / Timing Role: P-channel high-side power switch controlling phase voltage delivery; body diode provides freewheeling path during PWM off-time.

Use Value: Isolated tab enables direct heatsink mounting without insulation hardware, reducing BOM cost and assembly steps.

Use Scenario: Synchronous rectifier in isolated flyback or forward converter operating from 170 VDC input (rectified 120 VAC).

IC Role / Device Role / Timing Role: Secondary-side P-channel MOSFET replacing Schottky diode to reduce conduction losses.

Use Value: -200 V V_DS rating accommodates reflected voltage spikes; 0.80 Ω R_DS(on) cuts rectifier losses by >40% vs. 40 V Schottky at 3 A.

AC-DC Power Supplies

Uninterruptible Power Systems

Use Scenario: High-side switch in active clamp circuitry for LLC resonant converters.

IC Role / Device Role / Timing Role: Clamping switch absorbing leakage inductance energy during primary switch transition.

Use Value: 480 mJ single-pulse avalanche energy ensures safe clamping without snubber networks.

Use Scenario: Battery disconnect switch in 48–110 V DC backup systems with galvanic isolation requirements.

IC Role / Device Role / Timing Role: Solid-state high-side isolation switch enabling fail-safe battery isolation during fault conditions.

Use Value: 2.5 kV_RMS isolation and -55 to +150 °C operating range support long-term reliability in mission-critical UPS environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP9PF20	V_DS = -200 V, R_DS(on) = 1.2 Ω @ V_GS = -10 V, Q_g = 22 nC, non-isolated TO-220	Lacks 2.5 kV_RMS isolation; requires external insulator for heatsink mounting	Select when isolation is handled externally and lower gate charge reduces drive complexity
IXTP10P20P	V_DS = -200 V, R_DS(on) = 0.95 Ω @ V_GS = -10 V, Q_g = 26 nC, TO-220 (non-isolated)	No integrated isolation; higher R_DS(on) increases conduction loss by ~19% at 4 A	Prefer where existing PCB layout uses standard TO-220 footprints and thermal design accommodates higher R_thJA

Compared with STP9PF20 and IXTP10P20P, IRFI9630G uniquely integrates 2.5 kV_RMS isolation and 3.6 °C/W R_thJC in a single package - eliminating insulator BOM items and improving thermal margin in space-constrained industrial power stages.

Availability

IRFI9630G is available at Aetrix Electronics and suitable for industrial motor drives, high-voltage DC-DC converters, and AC-DC power supplies requiring stable component supply, long-lifecycle assurance, and traceable sourcing.

Supply support for IRFI9630G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding power and signal applications.

The IRFI9630G belongs to Vishay's third-generation high-voltage power MOSFET family, engineered for ruggedized switching in commercial and industrial power conversion where isolation, avalanche robustness, and thermal efficiency are critical.

FAQ

What is the maximum continuous drain current for IRFI9630G at 100 °C case temperature?

The IRFI9630G supports -2.7 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limits of the TO-220 FULLPAK package and ensures junction temperature remains within -55 to +150 °C range. At T_C = 25 °C, the rating is -4.3 A. Designers must verify heatsink performance to maintain safe operating area compliance.

Does IRFI9630G require external insulation when mounted to a metal heatsink?

No - the IRFI9630G does not require external insulation when mounted to a metal heatsink. Its TO-220 FULLPAK package provides 2.5 kV_RMS isolation (60 s, 60 Hz) and 4.8 mm creepage distance, enabling direct mechanical attachment using a single screw or clip. This eliminates mica washers or silicone pads typically needed with standard TO-220 devices.

What is the typical body diode reverse recovery time (t_rr) of IRFI9630G?

The IRFI9630G has a typical body diode reverse recovery time (t_rr) of 200–300 ns, measured at T_J = 25 °C, I_F = -6.5 A, and dI/dt = -100 A/μs. This parameter is critical for designing dead-time in synchronous rectification and half-bridge topologies to avoid cross-conduction. The corresponding Q_rr is 2.0–2.9 μC.

Can IRFI9630G be used in avalanche-rated applications?

Yes - the IRFI9630G is rated for repetitive avalanche energy (E_AR = 3.5 mJ) and single-pulse avalanche energy (E_AS = 480 mJ). These values are validated under specified test conditions (V_DD = -50 V, L = 38 mH, R_G = 25 Ω, I_AS = -4.3 A). Designers must ensure pulse width and duty cycle remain within limits defined in Figure 11 and note (a) of the datasheet to avoid junction overheating.

What is the gate-source threshold voltage (V_GS(th)) range for IRFI9630G?

The gate-source threshold voltage (V_GS(th)) for IRFI9630G is specified from -2.0 V to -4.0 V, measured at V_DS = V_GS and I_D = 250 μA. This negative threshold confirms its P-channel enhancement-mode operation: the device begins conducting when V_GS is more negative than the threshold, and fully enhances near -10 V. Gate drive circuits must deliver sufficient negative swing to ensure low R_DS(on).

IRFI9630G Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack, Isolated Tab

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 4.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 800mOhm @ 2.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 29 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

IRFI9630G FAQ

1.How can I place an order for IRFI9630G through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFI9630G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFI9630G reliable?

The price and inventory of IRFI9630G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFI9630G is usually 5 days.

3.What payment methods are accepted for IRFI9630G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFI9630G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFI9630G?

IRFI9630G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFI9630G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFI9630G?

For technical support, including IRFI9630G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFI9630G requirements.

6.How does Aetrix verify that IRFI9630G is sourced from the original manufacturer or authorized distributors?

All IRFI9630G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFI9630G meets industry standards.

7.What is the process for return or replacement of IRFI9630G?

All IRFI9630G units undergo pre-shipment inspection (PSI). If there is an issue with IRFI9630G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFI9630G part is unused and in its original packaging.

Return procedure for IRFI9630G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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