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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFI9Z24GPBF

Name: IRFI9Z24GPBF
Brand: Vishay Siliconix
SKU: IRFI9Z24GPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFI9Z24GPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack, Isolated Tab

Datasheet:: IRFI9Z24GPBF.pdf

Description:: MOSFET P-CH 60V 8.5A TO220-3

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Product details

Overview

IRFI9Z24GPBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in TO-220 FULLPAK package, rated for -60 V V_DS, 0.28 Ω R_DS(on) at V_GS = -10 V, and -8.5 A continuous drain current at T_C = 25 °C. It delivers high-voltage isolation (2.5 kV_RMS, 60 s), 175 °C operating junction temperature, and rugged unclamped inductive switching capability (200 mJ E_AS), used in DC-DC converters and industrial motor control.

For engineers reviewing the IRFI9Z24GPBF datasheet, IRFI9Z24GPBF pinout, IRFI9Z24GPBF application, or IRFI9Z24GPBF equivalent, this page provides verified electrical parameters, thermal performance data, body diode recovery characteristics, gate charge profile, and real-world design context for high-reliability power switching circuits requiring isolated mounting and elevated temperature operation.

Technical Context

This P-channel MOSFET employs third-generation silicon process technology optimized for fast switching with low conduction loss and enhanced avalanche ruggedness. Its TO-220 FULLPAK construction integrates high-isolation molding compound (equivalent to 100 µm mica) between tab and leads, enabling direct heatsink mounting without insulating hardware.

The device features dynamic dV/dt immunity (-4.5 V/ns), low internal source/drain inductance (L_S = 7.5 nH, L_D = 4.5 nH), and a fully characterized body diode (t_rr = 100–200 ns, Q_rr = 0.32–0.64 µC), supporting synchronous rectification and bidirectional energy transfer in flyback and half-bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Maximum blocking voltage in P-channel configuration; supports 48 V bus systems with safety margin.
R_DS(on)	0.28 Ω @ V_GS = -10 V - Low conduction loss enables <1.5 W dissipation at -5.1 A, reducing heatsink requirements.
Q_g	19 nC - Gate drive energy requirement determines driver sizing and switching loss in hard-switched applications.
E_AS	200 mJ - Single-pulse avalanche energy rating validates robustness under inductive load turn-off stress.
R_thJC	4.1 °C/W - Low junction-to-case thermal resistance allows efficient heat transfer to external heatsink via clip or screw mount.
t_rr	100–200 ns - Body diode reverse recovery time impacts switching loss and EMI in freewheeling paths.
V_GS(th)	-2.0 to -4.0 V - Threshold voltage range ensures reliable turn-on with standard logic-level gate drivers.

Pinout & Package

IRFI9Z24GPBF uses the TO-220 FULLPAK package: isolated plastic body with metal tab (drain-connected), 3-pin vertical leadframe, 15.87 mm height, 10.10 mm width, and 4.70 mm thickness. The molded isolation eliminates need for mica washers in commercial-industrial mounting.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	High-current drain terminal / heatsink interface	Electrically connected to drain; serves as primary thermal path and must be electrically isolated from chassis unless system ground referenced.
Lead 1 (Source)	Source connection / return path for load current	Low-inductance source node; critical for stable gate drive referencing and minimizing shoot-through risk in bridge configurations.
Lead 2 (Gate)	Control input for channel modulation	High-impedance input requiring <100 nA leakage; sensitive to noise-requires local RC snubber and short PCB trace routing.

Key Features

Feature	Design Value
2.5 kV_RMS isolation (60 s)	Enables direct heatsink mounting without insulating hardware-reduces BOM count and thermal interface resistance by ~30% vs. standard TO-220.
175 °C maximum junction temperature	Supports operation in sealed enclosures or high-ambient environments (e.g., industrial motor drives) without derating below 100 °C case temp.
Dynamic dV/dt rating: -4.5 V/ns	Prevents false turn-on during high-speed voltage transients-critical for reliable operation in noisy 48 V telecom or EV auxiliary systems.
Low R_thJC = 4.1 °C/W	Permits >30 W continuous power dissipation with modest heatsinking-enables compact designs in space-constrained power supplies.
Body diode Q_rr = 0.32–0.64 µC	Reduces reverse recovery loss and associated EMI in synchronous rectifier and LLC resonant converter applications.

Applications

Industrial Motor Control	48 V DC-DC Converters
Use Scenario: Half-bridge high-side switch in brushed DC motor driver for HVAC actuators and factory automation. IC Role / Device Role / Timing Role: P-channel high-side power switch controlling motor direction and braking via PWM. Use Value: Isolated tab eliminates gate-drive level-shifting complexity; 175 °C rating ensures reliability in enclosed motor housings.	Use Scenario: Primary-side synchronous rectifier in isolated 48 V to 12 V flyback converter for telecom power shelves. IC Role / Device Role / Timing Role: Secondary-side P-channel MOSFET replacing Schottky diode to reduce conduction loss. Use Value: Low R_DS(on) (0.28 Ω) cuts rectifier loss by >40% vs. 40 V Schottky; Q_rr minimizes switching loss during zero-voltage transitions.
Uninterruptible Power Supplies	Automotive Auxiliary Systems
Use Scenario: Battery disconnect switch in line-interactive UPS battery backup path with reverse polarity protection. IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as controlled isolation switch between battery and inverter input. Use Value: -60 V V_DS accommodates 48 V nominal battery plus surge transients; 200 mJ E_AS withstands load dump events.	Use Scenario: Load switch for 24 V auxiliary circuits (e.g., infotainment power rail) in commercial vehicles. IC Role / Device Role / Timing Role: Controlled power delivery switch with overtemperature and avalanche protection. Use Value: 175 °C rating exceeds automotive under-hood ambient limits; TO-220 FULLPAK isolation meets ISO 16750-2 insulation requirements.

Industrial Motor Control

48 V DC-DC Converters

Use Scenario: Half-bridge high-side switch in brushed DC motor driver for HVAC actuators and factory automation.

IC Role / Device Role / Timing Role: P-channel high-side power switch controlling motor direction and braking via PWM.

Use Value: Isolated tab eliminates gate-drive level-shifting complexity; 175 °C rating ensures reliability in enclosed motor housings.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V to 12 V flyback converter for telecom power shelves.

IC Role / Device Role / Timing Role: Secondary-side P-channel MOSFET replacing Schottky diode to reduce conduction loss.

Use Value: Low R_DS(on) (0.28 Ω) cuts rectifier loss by >40% vs. 40 V Schottky; Q_rr minimizes switching loss during zero-voltage transitions.

Uninterruptible Power Supplies

Automotive Auxiliary Systems

Use Scenario: Battery disconnect switch in line-interactive UPS battery backup path with reverse polarity protection.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as controlled isolation switch between battery and inverter input.

Use Value: -60 V V_DS accommodates 48 V nominal battery plus surge transients; 200 mJ E_AS withstands load dump events.

Use Scenario: Load switch for 24 V auxiliary circuits (e.g., infotainment power rail) in commercial vehicles.

IC Role / Device Role / Timing Role: Controlled power delivery switch with overtemperature and avalanche protection.

Use Value: 175 °C rating exceeds automotive under-hood ambient limits; TO-220 FULLPAK isolation meets ISO 16750-2 insulation requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9Z34NPBF	V_DS = -55 V, R_DS(on) = 0.28 Ω @ -10 V, Q_g = 21 nC, non-isolated TO-220	Lacks 2.5 kV isolation; requires mica washer and thermal pad for heatsink mounting.	Select when isolation is handled externally and cost sensitivity outweighs assembly simplification.
STP9PF55	V_DS = -55 V, R_DS(on) = 0.32 Ω @ -10 V, Q_g = 17 nC, TO-220AB (non-isolated)	Lower gate charge but higher on-resistance and no isolation; lower E_AS (120 mJ).	Prefer where gate drive power is constrained and thermal margin permits higher R_DS(on).

Compared with IRF9Z34NPBF and STP9PF55, the IRFI9Z24GPBF uniquely combines certified 2.5 kV_RMS isolation, -60 V rating, and 200 mJ avalanche energy-making it the only option among the three suitable for safety-critical, high-temperature, and high-reliability industrial power switching without added insulation hardware.

Availability

IRFI9Z24GPBF is available at Aetrix Electronics and suitable for industrial motor control, 48 V DC-DC conversion, and uninterruptible power supply applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFI9Z24GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency, ruggedness, and reliability.

The IRFI9Z24GPBF belongs to Vishay's third-generation high-voltage P-channel power MOSFET family, engineered for industrial and telecom power systems demanding high isolation, elevated temperature operation, and robust avalanche performance.

FAQ

What is the maximum continuous drain current for IRFI9Z24GPBF at 100 °C case temperature?

The IRFI9Z24GPBF supports -6.0 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limitations of the TO-220 FULLPAK package and must be applied in thermal design calculations alongside R_thJC = 4.1 °C/W to ensure junction temperature remains ≤175 °C under worst-case ambient and power dissipation conditions. The IRFI9Z24GPBF datasheet specifies this value explicitly in the "Continuous drain current" row under TC = 100 °C.

Does IRFI9Z24GPBF require a gate resistor for safe operation?

Yes, IRFI9Z24GPBF requires an external gate resistor to control turn-on/turn-off speed and suppress oscillation. With Q_g = 19 nC and typical gate drive impedance, a 10–22 Ω resistor is recommended to limit peak gate current and damp ringing caused by L_S = 7.5 nH and L_D = 4.5 nH. The IRFI9Z24GPBF switching waveforms in Figure 10b confirm sensitivity to gate resistance, and omitting it risks shoot-through or EMI in bridge configurations.

Can IRFI9Z24GPBF be used as a direct replacement for IRF9Z24 in existing designs?

No, IRFI9Z24GPBF is not a drop-in replacement for IRF9Z24. While both are P-channel -60 V MOSFETs, IRFI9Z24GPBF uses the isolated TO-220 FULLPAK package (tab = drain, electrically isolated), whereas IRF9Z24 uses standard non-isolated TO-220AB (tab = drain, uninsulated). Substituting IRFI9Z24GPBF requires verifying heatsink isolation, updating mechanical mounting, and revalidating thermal performance due to different R_thJC and creepage distances. The IRFI9Z24GPBF datasheet explicitly positions it as a higher-isolation alternative-not a pin-compatible upgrade.

What is the body diode forward voltage of IRFI9Z24GPBF at -8.5 A and 25 °C?

The body diode forward voltage (V_SD) of IRFI9Z24GPBF is -6.3 V at I_S = -8.5 A, T_J = 25 °C, and V_GS = 0 V, as specified in the "Drain-Source Body Diode Characteristics" table. This relatively high V_SD reflects the P-channel structure and confirms the device is intended for switching-not freewheeling-applications. Designers should account for this voltage drop in loss calculations when using the intrinsic diode in asynchronous topologies. The IRFI9Z24GPBF datasheet lists this parameter directly in the "Body diode voltage" row.

Is IRFI9Z24GPBF RoHS-compliant and lead-free?

Yes, IRFI9Z24GPBF is RoHS-compliant and lead-free, as confirmed by its part number suffix "PbF" and Vishay's material categorization documentation (www.vishay.com/doc?99912). The "PbF" designation indicates lead-free termination and compliance with EU Directive 2011/65/EU. The IRFI9Z24GPBF packaging and marking meet JEDEC J-STD-609A Class 1 requirements, and soldering recommendations specify 300 °C peak temperature for 10 seconds-consistent with lead-free reflow profiles.

IRFI9Z24GPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack, Isolated Tab

Packaging:: Tube

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 8.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 5.1A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 570 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 37W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

IRFI9Z24GPBF FAQ

1.How can I place an order for IRFI9Z24GPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFI9Z24GPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFI9Z24GPBF reliable?

The price and inventory of IRFI9Z24GPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFI9Z24GPBF is usually 5 days.

3.What payment methods are accepted for IRFI9Z24GPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFI9Z24GPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFI9Z24GPBF?

IRFI9Z24GPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFI9Z24GPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFI9Z24GPBF?

For technical support, including IRFI9Z24GPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFI9Z24GPBF requirements.

6.How does Aetrix verify that IRFI9Z24GPBF is sourced from the original manufacturer or authorized distributors?

All IRFI9Z24GPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFI9Z24GPBF meets industry standards.

7.What is the process for return or replacement of IRFI9Z24GPBF?

All IRFI9Z24GPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFI9Z24GPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFI9Z24GPBF part is unused and in its original packaging.

Return procedure for IRFI9Z24GPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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