Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFI9Z34GPBF

Name: IRFI9Z34GPBF
Brand: Vishay Siliconix
SKU: IRFI9Z34GPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFI9Z34GPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack, Isolated Tab

Datasheet:: IRFI9Z34GPBF.pdf

Description:: MOSFET P-CH 60V 12A TO220-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:254

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFI9Z34GPBF from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in TO-220 FULLPAK isolated package, rated for -60 V V_DS, 0.14 Ω R_DS(on) at V_GS = -10 V, and 42 W power dissipation at T_C = 25 °C. It delivers rugged unclamped inductive switching with 370 mJ single-pulse avalanche energy and supports industrial motor control, DC-DC converter high-side switching, and solid-state relay designs.

For engineers reviewing the IRFI9Z34GPBF datasheet, IRFI9Z34GPBF pinout, IRFI9Z34GPBF application, or IRFI9Z34GPBF equivalent, this page provides verified electrical parameters, thermal performance data, isolation capability (2.5 kV_RMS), gate charge profile (34 nC total), and real-world design context for high-voltage P-channel switching in commercial-industrial systems.

Technical Context

This device implements a third-generation silicon process optimized for fast switching and low R_DS(on) while maintaining high ruggedness. Its isolated TO-220 FULLPAK package integrates a thermally efficient molding compound enabling direct heatsink mounting without mica insulators - delivering junction-to-case thermal resistance of 3.6 °C/W and 2.5 kV_RMS isolation for 60 s at 60 Hz.

The IRFI9Z34GPBF features dynamic dV/dt immunity (-4.5 V/ns), body diode recovery time of 100–200 ns, and gate threshold voltage range of -2.0 V to -4.0 V. Its internal source/drain inductances (L_S = 7.5 nH, L_D = 4.5 nH) and low Crss (100 pF) support stable high-speed switching in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Supports high-side switching in 48 V DC bus systems with margin against transients
R_DS(on)	0.14 Ω @ V_GS = -10 V - Enables <1.0 W conduction loss at 7.2 A continuous drain current
Q_g	34 nC - Determines gate drive power requirement and switching speed in PWM circuits
E_AS	370 mJ - Withstands unclamped inductive energy during fault conditions without failure
R_thJC	3.6 °C/W - Allows efficient heat transfer to heatsink; enables 42 W continuous operation at 25 °C case temp
dV/dt rating	-4.5 V/ns - Resists false turn-on from rapid voltage transients in noisy power environments
T_J max	+175 °C - Sustains operation in sealed enclosures or high-ambient industrial settings

Pinout & Package

IRFI9Z34GPBF uses the TO-220 FULLPAK package: isolated plastic housing with integral heatsink tab, 3-pin configuration (Drain, Gate, Source), 15.87 mm length, 10.10 mm width, and 4.70 mm height. The package provides 4.8 mm creepage distance from sink to lead and 2.5 kV_RMS isolation.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	High-current output terminal / heatsink interface	Electrically connected to metal tab; must be isolated from chassis unless referenced to system ground
Gate	Control input	Receives negative bias relative to source to turn on; requires -10 V for full R_DS(on) specification
Source	Reference node / return path	Common connection point for gate drive reference and load return; defines V_GS polarity

Key Features

Feature	Design Value
Isolated TO-220 FULLPAK	Eliminates need for external insulating hardware - reduces BOM count and assembly steps in AC/DC and motor drives
2.5 kV_RMS isolation	Enables safe operation in Class I insulated systems without additional barrier materials or creepage extenders
P-channel topology	Simplifies high-side switch control in buck regulators and reverse-polarity protection circuits - no bootstrap circuit required
175 °C maximum junction temperature	Supports extended lifetime in sealed, convection-limited enclosures typical in industrial automation and power supplies
Low Q_gd/Q_g ratio (16/34 nC)	Improves Miller immunity and reduces risk of shoot-through in half-bridge configurations

Applications

Motor Control	Power Supply Protection
Use Scenario: High-side switch in 24–48 V brushed DC motor H-bridge drivers for factory automation equipment. IC Role / Device Role / Timing Role: P-channel MOSFET providing controlled current path to motor winding; operates in linear or switched mode depending on PWM duty cycle. Use Value: 0.14 Ω R_DS(on) minimizes I²R heating during continuous 7.2 A operation; 370 mJ E_AS withstands back-EMF spikes during abrupt stop commands.	Use Scenario: Reverse-polarity protection in telecom power distribution units feeding multiple downstream modules. IC Role / Device Role / Timing Role: Series pass element blocking reverse voltage while conducting forward current with minimal drop. Use Value: -60 V V_DS rating ensures robustness against 48 V nominal bus surges; -2.0 to -4.0 V V_GS(th) allows reliable turn-on with standard logic-level gate drivers.
DC-DC Converters	Industrial Solid-State Relays
Use Scenario: High-side synchronous rectifier in non-isolated buck converters for programmable logic controller (PLC) I/O power rails. IC Role / Device Role / Timing Role: Switching element controlling energy transfer from input to output; driven by dedicated gate driver IC. Use Value: 34 nC Q_g enables efficient 200–500 kHz switching with moderate gate drive strength; 100–200 ns trr supports ZVS-assisted topologies.	Use Scenario: Output stage in DIN-rail mounted SSRs replacing electromechanical relays in HVAC control panels. IC Role / Device Role / Timing Role: Main power switching device handling resistive and inductive loads up to 10 A RMS. Use Value: TO-220 FULLPAK's 2.5 kV_RMS isolation meets IEC 60947-4-1 requirements; 42 W PD rating sustains 12 A pulsed loads with proper heatsinking.

Motor Control

Power Supply Protection

Use Scenario: High-side switch in 24–48 V brushed DC motor H-bridge drivers for factory automation equipment.

IC Role / Device Role / Timing Role: P-channel MOSFET providing controlled current path to motor winding; operates in linear or switched mode depending on PWM duty cycle.

Use Value: 0.14 Ω R_DS(on) minimizes I²R heating during continuous 7.2 A operation; 370 mJ E_AS withstands back-EMF spikes during abrupt stop commands.

Use Scenario: Reverse-polarity protection in telecom power distribution units feeding multiple downstream modules.

IC Role / Device Role / Timing Role: Series pass element blocking reverse voltage while conducting forward current with minimal drop.

Use Value: -60 V V_DS rating ensures robustness against 48 V nominal bus surges; -2.0 to -4.0 V V_GS(th) allows reliable turn-on with standard logic-level gate drivers.

DC-DC Converters

Industrial Solid-State Relays

Use Scenario: High-side synchronous rectifier in non-isolated buck converters for programmable logic controller (PLC) I/O power rails.

IC Role / Device Role / Timing Role: Switching element controlling energy transfer from input to output; driven by dedicated gate driver IC.

Use Value: 34 nC Q_g enables efficient 200–500 kHz switching with moderate gate drive strength; 100–200 ns trr supports ZVS-assisted topologies.

Use Scenario: Output stage in DIN-rail mounted SSRs replacing electromechanical relays in HVAC control panels.

IC Role / Device Role / Timing Role: Main power switching device handling resistive and inductive loads up to 10 A RMS.

Use Value: TO-220 FULLPAK's 2.5 kV_RMS isolation meets IEC 60947-4-1 requirements; 42 W PD rating sustains 12 A pulsed loads with proper heatsinking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9Z34NPBF	Non-isolated TO-220 package; no 2.5 kV_RMS isolation; identical R_DS(on), V_DS, and Q_g	Requires external insulation for safety-critical or high-creepage designs	Select when isolation is handled at board level or cost sensitivity outweighs assembly simplification
STP9PF55	Same V_DS (-60 V), higher R_DS(on) (0.22 Ω), lower Q_g (22 nC); TO-220 non-isolated	Better switching efficiency but higher conduction loss; unsuitable for high-current linear operation	Prefer where gate drive power is constrained and average current ≤5 A

Compared with IRF9Z34NPBF and STP9PF55, the IRFI9Z34GPBF uniquely combines certified 2.5 kV_RMS isolation, low R_DS(on), and rugged avalanche capability - making it optimal for space-constrained, safety-compliant industrial power switches where board-level insulation adds cost or complexity.

Availability

IRFI9Z34GPBF is available at Aetrix Electronics and suitable for industrial motor control, DC-DC converter protection, and solid-state relay designs requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFI9Z34GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency power components.

The IRFI9Z34GPBF belongs to Vishay's third-generation high-voltage P-channel MOSFET family, engineered specifically for ruggedized commercial-industrial switching applications demanding isolation, thermal robustness, and avalanche survivability.

FAQ

What is the maximum continuous drain current for IRFI9Z34GPBF at 100 °C case temperature?

The IRFI9Z34GPBF supports -8.5 A continuous drain current at T_C = 100 °C, derated from its 25 °C rating of -12 A using a linear derating factor of 0.28 W/°C. This value reflects thermal limits under sustained conduction, not transient capability. Designers must verify heatsink sizing using R_thJC = 3.6 °C/W and ambient conditions. The IRFI9Z34GPBF datasheet specifies these limits in Absolute Maximum Ratings Table on page 1.

Does IRFI9Z34GPBF require a negative gate drive voltage to operate?

Yes, the IRFI9Z34GPBF is a P-channel MOSFET and requires a gate voltage negative relative to the source to turn on. Full enhancement occurs at V_GS = -10 V, where R_DS(on) is specified at 0.14 Ω. Its gate threshold voltage range is -2.0 V to -4.0 V, meaning it begins conducting significantly at modest negative bias. The IRFI9Z34GPBF gate leakage remains below ±100 nA at ±20 V, supporting stable bias networks.

Can IRFI9Z34GPBF be used in avalanche mode repeatedly?

The IRFI9Z34GPBF is rated for repetitive avalanche energy of 4.2 mJ and repetitive avalanche current of -12 A under defined test conditions (V_DD = -25 V, L = 3.0 mH, R_G = 25 Ω). While designed for ruggedness, repeated avalanche operation accelerates wear and must be limited per Vishay's application guidelines. The IRFI9Z34GPBF single-pulse rating (370 mJ) is intended for fault tolerance, not routine operation.

What is the body diode forward voltage of IRFI9Z34GPBF at 12 A and 25 °C?

The body diode forward voltage (V_SD) of the IRFI9Z34GPBF is -6.3 V at I_S = -12 A and T_J = 25 °C with V_GS = 0 V. This relatively high drop reflects its optimized channel design for switching rather than freewheeling; designers should account for this loss in synchronous rectifier or bidirectional switch applications. The IRFI9Z34GPBF body diode recovery time (t_rr) is 100–200 ns under standard test conditions.

Is IRFI9Z34GPBF RoHS-compliant and lead-free?

Yes, IRFI9Z34GPBF is lead (Pb)-free and RoHS-compliant, as confirmed by its "PbF" suffix and Vishay's material categorization documentation (www.vishay.com/doc?99912). The device uses matte tin-plated leads and complies with EU Directive 2011/65/EU. The IRFI9Z34GPBF soldering profile permits peak temperatures up to 300 °C for 10 seconds, aligning with standard lead-free reflow processes.

IRFI9Z34GPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack, Isolated Tab

Packaging:: Tube

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 140mOhm @ 7.2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1100 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 42W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

IRFI9Z34GPBF FAQ

1.How can I place an order for IRFI9Z34GPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFI9Z34GPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFI9Z34GPBF reliable?

The price and inventory of IRFI9Z34GPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFI9Z34GPBF is usually 5 days.

3.What payment methods are accepted for IRFI9Z34GPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFI9Z34GPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFI9Z34GPBF?

IRFI9Z34GPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFI9Z34GPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFI9Z34GPBF?

For technical support, including IRFI9Z34GPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFI9Z34GPBF requirements.

6.How does Aetrix verify that IRFI9Z34GPBF is sourced from the original manufacturer or authorized distributors?

All IRFI9Z34GPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFI9Z34GPBF meets industry standards.

7.What is the process for return or replacement of IRFI9Z34GPBF?

All IRFI9Z34GPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFI9Z34GPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFI9Z34GPBF part is unused and in its original packaging.

Return procedure for IRFI9Z34GPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …