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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFIB5N50LPBF

Name: IRFIB5N50LPBF
Brand: Vishay Siliconix
SKU: IRFIB5N50LPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFIB5N50LPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack, Isolated Tab

Datasheet:: IRFIB5N50LPBF.pdf

Description:: MOSFET N-CH 500V 4.7A TO220-3

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Product details

Overview

IRFIB5N50LPBF from Vishay Siliconix is a 500 V, 4.7 A N-channel power MOSFET in TO-220 FULLPAK package, featuring 0.67 Ω R_DS(on) at V_GS = 10 V, 45 nC total gate charge, and enhanced dV/dt ruggedness (19 V/ns). It serves as a primary switching device in zero-voltage-switching (ZVS) SMPS topologies for telecom and server power supplies.

For engineers reviewing the IRFIB5N50LPBF datasheet, IRFIB5N50LPBF pinout, IRFIB5N50LPBF application, or IRFIB5N50LPBF equivalent, key selection criteria include avalanche energy rating (140 mJ), body diode recovery performance (trr = 73–150 ns), gate threshold voltage range (3.0–5.0 V), and thermal resistance (R_thJC = 3.0 °C/W).

Technical Context

This MOSFET employs planar silicon technology with optimized cell layout to achieve high dV/dt immunity and low gate charge. Its elevated V_GS(th) (min 3.0 V) improves noise margin in high-noise power-conversion environments, while the super-fast intrinsic body diode enables ZVS operation without external anti-parallel diodes.

The device is characterized for unclamped inductive switching (UIS) with 140 mJ single-pulse avalanche energy at I_AR = 4.0 A and supports repetitive avalanche up to 3.0 mJ. Thermal design is enabled by low junction-to-case resistance and validated SOA curves up to 100 µs pulse width at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - Withstands DC bus voltages up to 400 V in telecom/server PSUs with safety margin.
R_DS(on)	0.67 Ω (max) at V_GS = 10 V - Enables <4.7 A continuous conduction with ≤1.5 W conduction loss at T_C = 25 °C.
Q_g	45 nC (max) - Reduces gate driver power requirement and simplifies drive circuit design for 100–500 kHz ZVS converters.
E_AS	140 mJ - Supports robust unclamped inductive switching during startup/fault conditions without failure.
dV/dt	19 V/ns - Ensures reliable operation under fast transient voltage stress in hard-switched and resonant topologies.
trr	73–150 ns - Minimizes reverse recovery losses and EMI generation when used in synchronous rectification or bidirectional switches.
T_J Range	–55 to +150 °C - Validated for industrial and telecom ambient environments with derated current above 100 °C.

Pinout & Package

TO-220 FULLPAK package with isolated tab (drain-connected), standard through-hole mounting, and RoHS-compliant lead-free finish. Thermal path optimized via direct die-to-tab interface.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level drive; threshold 3.0–5.0 V ensures noise-immune turn-on in noisy PSU environments.
D (Drain)	High-side switch node	Internally connected to metal tab; requires insulated mounting hardware when heatsink is grounded.
S (Source)	Power return reference	Serves as local ground reference for gate drive; connects to PCB source trace and current-sense resistor.

Key Features

Feature	Design Value
Super-fast body diode	trr = 73 ns (T_J = 25 °C), Q_rr = 200 nC - Eliminates need for external Schottky diode in ZVS flyback and LLC resonant converters.
Enhanced dV/dt ruggedness	19 V/ns rated - Prevents spurious turn-on during high dv/dt transients in high-frequency switching applications.
Higher V_GS(th)	3.0–5.0 V - Improves immunity to gate noise coupling in densely packed power stages.
Low Q_gd/Q_g ratio	23/45 = 0.51 - Supports stable Miller plateau control and reduces risk of shoot-through in half-bridge configurations.
Lead (Pb)-free construction	RoHS-compliant per EU Directive 2011/65/EU - Meets environmental compliance requirements for global OEM production.

Applications

Telecom Power Supplies	Server SMPS
Use Scenario: Primary-side switch in 48 V input, 12 V/54 A output phase-shifted full-bridge converter. IC Role / Device Role / Timing Role: High-voltage switching element operating at 100–200 kHz with ZVS transition. Use Value: 140 mJ avalanche rating withstands transformer leakage inductance spikes; 19 V/ns dV/dt rating prevents false triggering during fast bus transients.	Use Scenario: Active clamp forward or LLC resonant converter in 380 V DC-link server PSU. IC Role / Device Role / Timing Role: Main switching FET in high-efficiency, high-density power stage. Use Value: 0.67 Ω R_DS(on) limits conduction loss to <1.5 W at full load; super-fast body diode enables soft switching without added components.
Uninterruptible Power Supplies	Motor Control Inverters
Use Scenario: DC-DC boost stage in online UPS battery charger with 400 V DC bus. IC Role / Device Role / Timing Role: High-side switch in interleaved PFC or DC-DC isolation stage. Use Value: 500 V V_DS provides margin over 400 V nominal bus; 3.0 A continuous rating at T_C = 100 °C supports thermally constrained enclosures.	Use Scenario: Low-side switch in 3-phase inverter driving 200–500 W BLDC motor. IC Role / Device Role / Timing Role: Synchronous rectifier and PWM-controlled power switch. Use Value: Fast trr (73 ns) and low Q_rr reduce switching losses during commutation; TO-220 FULLPAK allows direct heatsink mounting in compact drives.

Telecom Power Supplies

Server SMPS

Use Scenario: Primary-side switch in 48 V input, 12 V/54 A output phase-shifted full-bridge converter.

IC Role / Device Role / Timing Role: High-voltage switching element operating at 100–200 kHz with ZVS transition.

Use Value: 140 mJ avalanche rating withstands transformer leakage inductance spikes; 19 V/ns dV/dt rating prevents false triggering during fast bus transients.

Use Scenario: Active clamp forward or LLC resonant converter in 380 V DC-link server PSU.

IC Role / Device Role / Timing Role: Main switching FET in high-efficiency, high-density power stage.

Use Value: 0.67 Ω R_DS(on) limits conduction loss to <1.5 W at full load; super-fast body diode enables soft switching without added components.

Uninterruptible Power Supplies

Motor Control Inverters

Use Scenario: DC-DC boost stage in online UPS battery charger with 400 V DC bus.

IC Role / Device Role / Timing Role: High-side switch in interleaved PFC or DC-DC isolation stage.

Use Value: 500 V V_DS provides margin over 400 V nominal bus; 3.0 A continuous rating at T_C = 100 °C supports thermally constrained enclosures.

Use Scenario: Low-side switch in 3-phase inverter driving 200–500 W BLDC motor.

IC Role / Device Role / Timing Role: Synchronous rectifier and PWM-controlled power switch.

Use Value: Fast trr (73 ns) and low Q_rr reduce switching losses during commutation; TO-220 FULLPAK allows direct heatsink mounting in compact drives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V, 4.5 A, R_DS(on) = 0.75 Ω, Q_g = 35 nC, TO-220FP package (no isolated tab)	Lacks isolated drain tab; requires insulating washer for grounded heatsinks	Select when lower gate charge prioritized over avalanche robustness (E_AS = 120 mJ vs. 140 mJ)
IXTP4N50L	500 V, 4.0 A, R_DS(on) = 0.85 Ω, Q_g = 24 nC, TO-220 package with non-isolated tab	Lower current rating and higher R_DS(on); no specified dV/dt rating	Prefer for cost-sensitive designs where 19 V/ns dV/dt immunity is not required

Compared with STP5NK50ZFP and IXTP4N50L, the IRFIB5N50LPBF delivers superior avalanche ruggedness (140 mJ), verified 19 V/ns dV/dt capability, and an isolated drain tab enabling simplified thermal management-making it optimal for ZVS telecom/server SMPS where reliability under transient stress is critical.

Availability

IRFIB5N50LPBF is available at Aetrix Electronics and suitable for telecom power supplies, server SMPS, and uninterruptible power supplies requiring stable component supply across multi-year production cycles.

Supply support for IRFIB5N50LPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, optoelectronics, and passive components with emphasis on power efficiency and reliability.

The IRFIB5N50LPBF belongs to Vishay's "Fast Body Diode" power MOSFET family, engineered specifically for zero-voltage-switching (ZVS) and resonant-mode power conversion where diode recovery performance directly impacts system efficiency and EMI.

FAQ

What is the maximum continuous drain current for IRFIB5N50LPBF at 100 °C case temperature?

The IRFIB5N50LPBF supports 3.0 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220 FULLPAK package and must be applied in thermal design calculations alongside R_thJC = 3.0 °C/W to ensure junction temperature remains ≤150 °C under steady-state operation.

Does IRFIB5N50LPBF have an isolated drain tab?

Yes, the IRFIB5N50LPBF uses a TO-220 FULLPAK package with an electrically isolated metal tab internally connected to the drain terminal. This allows direct mounting to a grounded heatsink without additional insulation, simplifying thermal design and reducing assembly cost compared to standard TO-220 variants requiring mica washers.

What is the typical reverse recovery time (trr) of the body diode in IRFIB5N50LPBF?

The IRFIB5N50LPBF body diode exhibits trr = 73 ns at T_J = 25 °C and 150 ns at T_J = 125 °C, measured with I_F = 4.0 A and dI/dt = 100 A/µs. This fast recovery enables efficient ZVS operation and reduces switching losses in resonant topologies without requiring external diodes.

Is IRFIB5N50LPBF suitable for use in zero-voltage-switching (ZVS) circuits?

Yes, the IRFIB5N50LPBF is explicitly designed for ZVS applications. Its super-fast body diode (trr ≤ 150 ns), high dV/dt capability (19 V/ns), and low Q_gd enable reliable soft-switching transitions. Vishay's datasheet highlights ZVS SMPS as a primary application, confirming suitability for LLC, phase-shifted full-bridge, and other resonant converters.

What is the gate threshold voltage range for IRFIB5N50LPBF?

The IRFIB5N50LPBF has a gate threshold voltage V_GS(th) ranging from 3.0 V to 5.0 V at I_D = 250 µA and T_J = 25 °C. This elevated threshold improves noise immunity in high-dv/dt power-conversion environments and ensures stable turn-on behavior with standard 10 V gate drivers.

IRFIB5N50LPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack, Isolated Tab

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 4.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 800mOhm @ 2.4A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 42W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

IRFIB5N50LPBF FAQ

1.How can I place an order for IRFIB5N50LPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFIB5N50LPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFIB5N50LPBF reliable?

The price and inventory of IRFIB5N50LPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFIB5N50LPBF is usually 5 days.

3.What payment methods are accepted for IRFIB5N50LPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFIB5N50LPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFIB5N50LPBF?

IRFIB5N50LPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFIB5N50LPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFIB5N50LPBF?

For technical support, including IRFIB5N50LPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFIB5N50LPBF requirements.

6.How does Aetrix verify that IRFIB5N50LPBF is sourced from the original manufacturer or authorized distributors?

All IRFIB5N50LPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFIB5N50LPBF meets industry standards.

7.What is the process for return or replacement of IRFIB5N50LPBF?

All IRFIB5N50LPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFIB5N50LPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFIB5N50LPBF part is unused and in its original packaging.

Return procedure for IRFIB5N50LPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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