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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFIB5N65A

Name: IRFIB5N65A
Brand: Vishay Siliconix
SKU: IRFIB5N65A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFIB5N65A

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack, Isolated Tab

Datasheet:: IRFIB5N65A.pdf

Description:: MOSFET N-CH 650V 5.1A TO220-3

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Product details

Overview

IRFIB5N65A from Vishay Siliconix is a 650 V, 5.1 A N-channel power MOSFET in TO-220 FULLPAK package, optimized for high-voltage isolation (2.5 kVRMS) and fast switching in offline SMPS topologies including single-transistor flyback and forward converters. It delivers R_DS(on) = 0.93 Ω at V_GS = 10 V, Q_g = 48 nC, and supports repetitive avalanche current up to 5.2 A.

For engineers reviewing the IRFIB5N65A datasheet, IRFIB5N65A pinout, IRFIB5N65A application, or IRFIB5N65A equivalent, key selection criteria include its 650 V blocking capability, low gate charge for simplified drive, robust dV/dt immunity (2.8 V/ns), and integrated body diode with trr = 493–739 ns - critical for high-efficiency, high-reliability AC/DC power conversion.

Technical Context

This device employs a planar high-voltage silicon process with fully characterized avalanche ruggedness and dynamic dV/dt performance. Its gate structure minimizes Q_gd/Q_gs ratio (19 nC / 12 nC), enabling stable operation under hard-switching conditions and reducing susceptibility to false turn-on during high-speed transitions.

The TO-220 FULLPAK package integrates an isolated drain tab rated for 2.5 kVRMS isolation (60 s, 60 Hz), eliminating need for additional insulation in high-side configurations. Thermal resistance R_thJC = 2.1 °C/W enables 60 W power dissipation at T_C = 25 °C while maintaining TJ ≤ 150 °C under continuous operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Supports universal AC input (85–265 VAC) with ≥2× safety margin in offline SMPS designs.
R_DS(on)	0.93 Ω @ V_GS = 10 V - Enables <1.5 W conduction loss at 3.1 A DC, suitable for 50–100 W power stages.
Q_g	48 nC - Reduces gate driver power requirement and simplifies selection of low-cost bipolar or logic-level drivers.
E_AS	325 mJ - Withstands unclamped inductive energy in flyback snubberless operation without external clamping.
dV/dt Rating	2.8 V/ns - Ensures reliable operation in high-dV/dt environments (e.g., transformer leakage spikes) without spurious turn-on.
T_J Range	−55 °C to +150 °C - Qualified for industrial and telecom power supplies operating in extended ambient conditions.
Body Diode V_SD	1.5 V @ I_S = 5.2 A - Low forward drop reduces reverse recovery losses in synchronous rectification or freewheeling paths.

Pinout & Package

IRFIB5N65A uses the TO-220 FULLPAK package with electrically isolated drain tab (2.5 kVRMS isolation). The plastic body provides creepage/clearance compliance for reinforced insulation in Class II systems.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Accepts 10 V drive; threshold V_GS(th) = 2.0–4.0 V ensures compatibility with standard PWM controllers.
D (Drain)	High-voltage power output	Isolated metal tab rated 2.5 kVRMS; connects directly to heatsink without insulator in many layouts.
S (Source)	Power return and reference	Common node for gate drive return and current sensing; ties to primary ground in flyback topologies.

Key Features

Feature	Design Value
Low Q_g (48 nC)	Reduces gate driver power loss and enables use of compact, low-cost drivers in space-constrained adapters.
Characterized avalanche energy (E_AS = 325 mJ)	Eliminates need for external RCD snubbers in flyback converters, lowering BOM count and improving reliability.
Enhanced dV/dt ruggedness (2.8 V/ns)	Prevents false triggering during transformer ringing, increasing system stability without added gate resistors.
TO-220 FULLPAK isolation	Enables direct mounting to grounded heatsinks in high-side switch configurations, simplifying thermal design.
Body diode trr = 493–739 ns	Minimizes reverse recovery charge (Q_rr = 2.1–3.2 μC), reducing switching loss and EMI in discontinuous conduction mode.

Applications

Offline Flyback Converter	UPS Inverter Stage
Use Scenario: Primary-side switch in 30–60 W universal-input AC/DC adapter with no auxiliary winding. IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer via transformer; operates at 65–130 kHz with duty cycle modulation. Use Value: 650 V rating accommodates reflected output voltage plus line surge; low Q_g enables efficient drive from UC384x-series controllers.	Use Scenario: DC bus switching in 500–1000 VA line-interactive UPS output stage. IC Role / Device Role / Timing Role: Half-bridge high-side switch handling 350–400 V DC bus; synchronized with complementary low-side device. Use Value: 2.5 kVRMS isolation allows direct heatsink mounting to chassis ground, reducing layout complexity and parasitic inductance.
Industrial SMPS	LED Driver Power Stage
Use Scenario: Main switch in 75 W open-frame industrial power supply with wide temperature range (−40 °C to +70 °C). IC Role / Device Role / Timing Role: Forward converter primary switch; handles continuous conduction mode with 100 kHz switching frequency. Use Value: R_thJC = 2.1 °C/W and −55 °C to +150 °C T_J rating ensure thermal stability across full load and ambient range.	Use Scenario: High-voltage buck-boost switch in constant-current LED driver for street lighting (input 277 VAC). IC Role / Device Role / Timing Role: Primary-side switch regulating LED string current; operates in critical conduction mode (CrM). Use Value: Fast body diode recovery (trr ≤ 739 ns) and low Q_rr minimize switching loss and audible noise during zero-crossing transitions.

Offline Flyback Converter

UPS Inverter Stage

Use Scenario: Primary-side switch in 30–60 W universal-input AC/DC adapter with no auxiliary winding.

IC Role / Device Role / Timing Role: High-voltage switching element controlling energy transfer via transformer; operates at 65–130 kHz with duty cycle modulation.

Use Value: 650 V rating accommodates reflected output voltage plus line surge; low Q_g enables efficient drive from UC384x-series controllers.

Use Scenario: DC bus switching in 500–1000 VA line-interactive UPS output stage.

IC Role / Device Role / Timing Role: Half-bridge high-side switch handling 350–400 V DC bus; synchronized with complementary low-side device.

Use Value: 2.5 kVRMS isolation allows direct heatsink mounting to chassis ground, reducing layout complexity and parasitic inductance.

Industrial SMPS

LED Driver Power Stage

Use Scenario: Main switch in 75 W open-frame industrial power supply with wide temperature range (−40 °C to +70 °C).

IC Role / Device Role / Timing Role: Forward converter primary switch; handles continuous conduction mode with 100 kHz switching frequency.

Use Value: R_thJC = 2.1 °C/W and −55 °C to +150 °C T_J rating ensure thermal stability across full load and ambient range.

Use Scenario: High-voltage buck-boost switch in constant-current LED driver for street lighting (input 277 VAC).

IC Role / Device Role / Timing Role: Primary-side switch regulating LED string current; operates in critical conduction mode (CrM).

Use Value: Fast body diode recovery (trr ≤ 739 ns) and low Q_rr minimize switching loss and audible noise during zero-crossing transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	600 V V_DS, R_DS(on) = 1.2 Ω, Q_g = 34 nC, TO-220FP package (non-isolated drain)	Lacks 2.5 kVRMS isolation; requires insulating pad for heatsink mounting	Preferred where lower gate charge and cost are prioritized over isolation; verify creepage in final layout.
FQP6N65C	650 V V_DS, R_DS(on) = 1.0 Ω, Q_g = 42 nC, TO-220 package (standard, non-FULLPAK)	No integrated isolation; higher R_thJC = 2.5 °C/W limits power density	Suitable for lower-power (<45 W) designs where isolation is handled externally; less rugged dV/dt (2.0 V/ns).

Compared with STP6NK60ZFP and FQP6N65C, the IRFIB5N65A uniquely combines 650 V rating, 2.5 kVRMS isolation, and 2.8 V/ns dV/dt immunity - making it the only option among the three qualified for reinforced insulation in compact, high-density offline power supplies without additional isolation hardware.

Availability

IRFIB5N65A is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power systems, and high-voltage isolation applications requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFIB5N65A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The IRFIB5N65A belongs to Vishay's high-voltage planar MOSFET product line, engineered specifically for robust, isolated high-side switching in AC/DC and DC/DC power conversion systems demanding safety certification and field reliability.

FAQ

What is the maximum continuous drain current for IRFIB5N65A at 100 °C case temperature?

The IRFIB5N65A supports a continuous drain current of 3.2 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220 FULLPAK package, where power dissipation is constrained by junction-to-case thermal resistance (R_thJC = 2.1 °C/W). At this condition, the device maintains safe operation with T_J ≤ 150 °C under steady-state conduction.

Does IRFIB5N65A have a fully isolated drain tab, and what is its isolation rating?

Yes, the IRFIB5N65A features a fully isolated drain tab in its TO-220 FULLPAK package, rated for 2.5 kVRMS isolation at 60 Hz for 60 seconds. This isolation is achieved through internal molding and dielectric construction - not external insulation - allowing direct mounting to grounded heatsinks in high-side configurations without thermal pads or insulators, as confirmed in the Applications section and Package Information document 91359.

What is the typical reverse recovery time (trr) of the body diode in IRFIB5N65A?

According to the datasheet (Document 91174, page 3), the body diode reverse recovery time (trr) of the IRFIB5N65A is 493–739 ns, measured at T_J = 25 °C, I_F = 5.2 A, and dI/dt = 100 A/μs. This parameter is critical for minimizing switching loss and EMI in topologies relying on the intrinsic diode, such as flyback freewheeling or CrM boost stages.

Can IRFIB5N65A be used as a direct replacement for IRFI5N65A in existing designs?

No - IRFIB5N65A is not a direct replacement for IRFI5N65A. While both are 650 V N-channel MOSFETs in TO-220 packages, the IRFIB5N65A uses the FULLPAK variant with isolated drain and different thermal and electrical characteristics (e.g., R_thJC = 2.1 °C/W vs. IRFI5N65A's 2.5 °C/W, and enhanced dV/dt rating). Layout, heatsinking, and gate drive must be revalidated; no pin-to-pin or functional equivalence is claimed in Vishay documentation.

What is the gate-source threshold voltage range for IRFIB5N65A?

The gate-source threshold voltage (V_GS(th)) for IRFIB5N65A is specified as 2.0 V minimum to 4.0 V maximum, tested at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 10 V gate drivers while providing margin against false triggering due to noise, consistent with its intended use in industrial-grade SMPS control loops.

IRFIB5N65A Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack, Isolated Tab

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 5.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 930mOhm @ 3.1A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 48 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1417 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

IRFIB5N65A FAQ

1.How can I place an order for IRFIB5N65A through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFIB5N65A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFIB5N65A reliable?

The price and inventory of IRFIB5N65A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFIB5N65A is usually 5 days.

3.What payment methods are accepted for IRFIB5N65A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFIB5N65A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFIB5N65A?

IRFIB5N65A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFIB5N65A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFIB5N65A?

For technical support, including IRFIB5N65A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFIB5N65A requirements.

6.How does Aetrix verify that IRFIB5N65A is sourced from the original manufacturer or authorized distributors?

All IRFIB5N65A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFIB5N65A meets industry standards.

7.What is the process for return or replacement of IRFIB5N65A?

All IRFIB5N65A units undergo pre-shipment inspection (PSI). If there is an issue with IRFIB5N65A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFIB5N65A part is unused and in its original packaging.

Return procedure for IRFIB5N65A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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