Vishay Siliconix IRFIB5N65APBF

Overview

IRFIB5N65APBF from Vishay Siliconix is a 650 V, 5.1 A N-channel power MOSFET in TO-220 FULLPAK package, featuring R_DS(on) = 0.93 Ω at V_GS = 10 V, Q_g = 48 nC, and 2.5 kV_RMS high-voltage isolation - designed for primary-side switching in flyback and forward SMPS topologies.

For engineers reviewing the IRFIB5N65APBF datasheet, IRFIB5N65APBF pinout, IRFIB5N65APBF application, or IRFIB5N65APBF equivalent, key selection criteria include avalanche ruggedness (E_AS = 325 mJ), dV/dt immunity (2.8 V/ns), body diode recovery (t_rr = 493–739 ns), and thermal resistance (R_thJC = 2.1 °C/W) for reliable high-voltage power conversion design.

Technical Context

This MOSFET employs planar high-voltage silicon technology with fully characterized avalanche capability and dynamic dV/dt ruggedness, enabling robust unclamped inductive switching in offline converters. Its gate charge profile (Q_gs = 12 nC, Q_gd = 19 nC) supports predictable turn-on/turn-off timing under 325 V bus conditions.

The integrated body diode is specified for continuous 5.2 A and pulsed 21 A operation, with reverse recovery charge Q_rr = 2.1–3.2 μC and t_rr validated at 100 A/μs dI/dt - critical for minimizing switching losses in hard-switched topologies.

Key Specifications

Pinout & Package

TO-220 FULLPAK package with isolated drain tab (2.5 kV_RMS, 60 s, 60 Hz), standard 3-pin vertical mounting footprint, and exposed copper drain pad for low-inductance, high-current PCB layout.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with STP6NK60ZFP and IXTP50N10P, the IRFIB5N65APBF uniquely balances 650 V capability, 0.93 Ω conduction resistance, and 2.5 kV_RMS isolation - making it the only viable option among the three for primary-side switching in universal-input offline SMPS requiring reinforced insulation.

Availability

IRFIB5N65APBF is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power systems, and high-speed power switching applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFIB5N65APBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFIB5N65APBF belongs to Vishay's high-voltage Power MOSFET product line, engineered specifically for robust primary-side switching in offline AC/DC converters demanding high avalanche energy, isolation integrity, and thermal stability.

FAQ

What is the maximum continuous drain current for IRFIB5N65APBF at 100 °C case temperature?

The IRFIB5N65APBF supports 3.2 A continuous drain current at T_C = 100 °C, derated linearly from 5.1 A at 25 °C using a factor of 0.48 W/°C. This value reflects thermal limitation rather than electrical capability - actual current must be validated against junction temperature rise using R_thJC = 2.1 °C/W and ambient conditions in the final layout. The IRFIB5N65APBF datasheet specifies this limit in absolute maximum ratings Table 1.

Does IRFIB5N65APBF have a fully rated body diode for synchronous rectification?

No - the IRFIB5N65APBF body diode is rated for 5.2 A continuous and 21 A pulsed operation but is not optimized for synchronous rectification due to its relatively high V_SD = 1.5 V and t_rr = 493–739 ns. It is intended for freewheeling and clamping in hard-switched topologies, not zero-voltage switching. For synchronous rectification, dedicated low-V_F Schottky or logic-level MOSFETs are recommended instead of relying on the IRFIB5N65APBF body diode.

What is the gate threshold voltage range for IRFIB5N65APBF, and how does it affect drive design?

The IRFIB5N65APBF has a gate-source threshold voltage V_GS(th) of 2.0–4.0 V at I_D = 250 μA, meaning it begins conducting weakly within this range but requires ≥10 V V_GS to achieve full R_DS(on) = 0.93 Ω. Drive circuits must supply ≥12 V to ensure margin against noise and voltage drop - underspecified gate drive risks partial turn-on, excessive conduction loss, and thermal runaway. The IRFIB5N65APBF gate is not logic-level compatible with 3.3 V or 5 V microcontrollers without level-shifting.

Can IRFIB5N65APBF replace IRFIB5N65A in existing designs?

Yes - IRFIB5N65APBF is the lead(Pb)-free version of IRFIB5N65A, with identical electrical specifications, thermal performance, pinout, and package dimensions. The "PbF" suffix denotes RoHS-compliant termination; no layout, thermal, or schematic changes are required when migrating from IRFIB5N65A to IRFIB5N65APBF. Both share the same Vishay document number 91174 and revision history, confirming functional equivalence across manufacturing lots.

What is the significance of the 2.5 kV_RMS isolation rating for IRFIB5N65APBF?

The 2.5 kV_RMS isolation rating (tested at 60 Hz for 60 seconds) certifies that the TO-220 FULLPAK package provides reinforced insulation between the drain tab and all other terminals - critical for meeting IEC/UL 62368-1 and EN 60950-1 safety requirements in Class II AC/DC power supplies. This eliminates need for additional creepage/clearance barriers on PCB and validates direct mounting to heatsinks without insulating pads in many designs. The IRFIB5N65APBF achieves this via internal mold compound and leadframe geometry, not external components.