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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFIB6N60A

Name: IRFIB6N60A
Brand: Vishay Siliconix
SKU: IRFIB6N60A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFIB6N60A

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack, Isolated Tab

Datasheet:: IRFIB6N60A.pdf

Description:: MOSFET N-CH 600V 5.5A TO220-3

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Product details

Overview

IRFIB6N60A from Vishay Siliconix is a 600 V, 5.5 A N-channel power MOSFET in TO-220 FULLPAK package, featuring 0.75 Ω R_DS(on) at V_GS = 10 V, 49 nC total gate charge, and 2.5 kV_RMS high-voltage isolation - designed for primary-side switching in offline SMPS topologies including active-clamped forward converters.

For engineers reviewing the IRFIB6N60A datasheet, IRFIB6N60A pinout, IRFIB6N60A application, or IRFIB6N60A equivalent, key selection criteria include avalanche ruggedness (290 mJ single-pulse E_AS), dV/dt immunity (5.0 V/ns), and thermal resistance (R_thJC = 2.1 °C/W), critical for high-reliability 600 V power conversion designs.

Technical Context

This MOSFET employs planar vertical DMOS technology with fully characterized avalanche performance and dynamic dV/dt ruggedness. Its gate drive is simplified by low Q_g (49 nC max) and moderate V_GS(th) (2.0–4.0 V), enabling compatibility with standard 10 V gate drivers while maintaining robust overvoltage protection.

The integrated body diode supports unclamped inductive switching with t_rr = 530–800 ns and Q_rr = 3.0–4.4 μC at I_F = 9.2 A, and the device is rated for repetitive avalanche current (I_AR = 9.2 A) under defined pulse conditions per Figure 12.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Maximum blocking voltage for primary-side switch in universal-input offline SMPS
R_DS(on)	0.75 Ω @ V_GS = 10 V - Conduction loss of ~1.2 W at 3.3 A DC, enabling thermally constrained PCB layouts
Q_g	49 nC max - Enables efficient switching at 100–300 kHz with moderate gate driver strength (e.g., 1–2 A peak)
E_AS	290 mJ (single-pulse) - Withstands energy from leakage inductance spikes without failure in flyback/forward topologies
R_thJC	2.1 °C/W - Allows 60 W continuous dissipation with ≤126 °C junction rise above 25 °C case temperature
dV/dt rating	5.0 V/ns - Resists false turn-on during high dv/dt transients in hard-switched high-voltage circuits
Isolation voltage	2.5 kV_RMS, 60 s, 60 Hz - Meets reinforced insulation requirements for Class II AC-DC power supplies

Pinout & Package

IRFIB6N60A is housed in a TO-220 FULLPAK package with insulated tab (exposed drain), offering enhanced creepage/clearance and simplified heatsinking versus standard TO-220. The package provides 2.5 kV_RMS isolation between drain and mounting surface.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Accepts 10 V logic-level drive; threshold 2.0–4.0 V ensures reliable turn-on with margin against noise
D (Drain)	High-side power terminal	Connected to exposed copper tab; electrically isolated from mounting surface at 2.5 kV_RMS
S (Source)	Reference/return terminal	Common return for gate drive and load current; ties to primary ground in flyback/forward converters

Key Features

Feature	Design Value
Low Q_g/Q_gd ratio	Q_gd = 20 nC / Q_g = 49 nC → 0.41 - Improves Miller immunity and enables faster, more controllable switching
Fully characterized C_oss	C_oss = 180 pF @ V_DS = 25 V; C_{oss eff} = 96 pF @ 0–480 V - Enables accurate soft-switching timing and snubber design
Avalanche-rated	Specified E_AS = 290 mJ and I_AR = 9.2 A - Guarantees operation under unclamped inductive switching without derating
Body diode t_rr	530–800 ns with Q_rr = 3.0–4.4 μC - Supports ZVS/ZCS transitions and reduces diode recovery losses in resonant topologies
High dV/dt immunity	5.0 V/ns - Prevents spurious conduction during fast voltage transients across drain-source in high-frequency SMPS

Applications

Server PSU Primary Switch	Industrial UPS Inverter Stage
Use Scenario: High-efficiency 1 kW server power supply operating from 90–264 VAC input using active-clamped forward topology. IC Role / Device Role / Timing Role: Primary-side main switch handling 600 V DC bus, switching at 200–300 kHz with zero-voltage switching assist. Use Value: Low R_DS(on) minimizes conduction loss at full load; 290 mJ E_AS absorbs clamp circuit energy without failure.	Use Scenario: 3 kVA online UPS inverter stage converting 400 V DC bus to 230 VAC output via full-bridge configuration. IC Role / Device Role / Timing Role: High-side switch in half-bridge leg, subjected to repetitive 600 V blocking and 5.5 A RMS current. Use Value: 2.5 kV_RMS isolation eliminates need for insulating pads; 5.0 V/ns dV/dt rating prevents shoot-through during bus transients.
Medical AC-DC Adapter	EV Charger Auxiliary Supply
Use Scenario: 150 W Class II medical-grade AC-DC adapter requiring reinforced insulation and low leakage current. IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback, operating with variable frequency up to 130 kHz. Use Value: TO-220 FULLPAK's 2.5 kV_RMS isolation meets IEC 60601-1 creepage requirements; low Q_g enables clean gate drive with minimal EMI.	Use Scenario: 48 V auxiliary power supply in 11 kW EV on-board charger, deriving power from 800 V DC link. IC Role / Device Role / Timing Role: High-voltage buck converter switch stepping down 800 V to 48 V at 100 kHz. Use Value: 600 V V_DS provides 30 % voltage margin over 800 V bus; R_thJC = 2.1 °C/W enables compact heatsink design.

Server PSU Primary Switch

Industrial UPS Inverter Stage

Use Scenario: High-efficiency 1 kW server power supply operating from 90–264 VAC input using active-clamped forward topology.

IC Role / Device Role / Timing Role: Primary-side main switch handling 600 V DC bus, switching at 200–300 kHz with zero-voltage switching assist.

Use Value: Low R_DS(on) minimizes conduction loss at full load; 290 mJ E_AS absorbs clamp circuit energy without failure.

Use Scenario: 3 kVA online UPS inverter stage converting 400 V DC bus to 230 VAC output via full-bridge configuration.

IC Role / Device Role / Timing Role: High-side switch in half-bridge leg, subjected to repetitive 600 V blocking and 5.5 A RMS current.

Use Value: 2.5 kV_RMS isolation eliminates need for insulating pads; 5.0 V/ns dV/dt rating prevents shoot-through during bus transients.

Medical AC-DC Adapter

EV Charger Auxiliary Supply

Use Scenario: 150 W Class II medical-grade AC-DC adapter requiring reinforced insulation and low leakage current.

IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback, operating with variable frequency up to 130 kHz.

Use Value: TO-220 FULLPAK's 2.5 kV_RMS isolation meets IEC 60601-1 creepage requirements; low Q_g enables clean gate drive with minimal EMI.

Use Scenario: 48 V auxiliary power supply in 11 kW EV on-board charger, deriving power from 800 V DC link.

IC Role / Device Role / Timing Role: High-voltage buck converter switch stepping down 800 V to 48 V at 100 kHz.

Use Value: 600 V V_DS provides 30 % voltage margin over 800 V bus; R_thJC = 2.1 °C/W enables compact heatsink design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	600 V, 6 A, R_DS(on) = 0.75 Ω, but Q_g = 38 nC (lower), E_AS = 220 mJ (lower), TO-220FP package (non-isolated tab)	Lacks 2.5 kV_RMS isolation; requires insulating pad and thermal interface; better for cost-sensitive non-medical SMPS	Choose STP6NK60ZFP when isolation is handled externally and lower gate charge is prioritized over avalanche margin.
IXFH6N60P	600 V, 6.4 A, R_DS(on) = 0.75 Ω, Q_g = 52 nC (slightly higher), E_AS = 320 mJ (higher), TO-247 package (larger, non-isolated)	Higher power handling but no built-in isolation; needs external insulation and larger heatsink footprint	Choose IXFH6N60P when higher avalanche energy and higher continuous current are required, and board space allows TO-247.

Compared with STP6NK60ZFP and IXFH6N60P, the IRFIB6N60A uniquely integrates 2.5 kV_RMS isolation in TO-220 FULLPAK, eliminating insulator hardware while delivering balanced Q_g, R_DS(on), and E_AS for compact, safety-compliant 600 V switch-mode designs.

Availability

IRFIB6N60A is available at Aetrix Electronics and suitable for server PSUs, industrial UPS systems, medical AC-DC adapters, and EV auxiliary power supplies requiring stable component supply, long-term lifecycle support, and certified high-voltage isolation.

Supply support for IRFIB6N60A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The IRFIB6N60A belongs to Vishay's high-voltage power MOSFET product line, engineered for primary-side switching in safety-critical, high-isolation AC-DC and DC-DC converters demanding consistent avalanche performance and thermal stability.

FAQ

What is the maximum continuous drain current rating for the IRFIB6N60A at 100 °C case temperature?

The IRFIB6N60A has a maximum continuous drain current (I_D) of 3.5 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220 FULLPAK package and ensures safe operation within its 2.1 °C/W junction-to-case thermal resistance. At 25 °C case temperature, the rating increases to 5.5 A.

Does the IRFIB6N60A have an isolated package, and what is its isolation rating?

Yes, the IRFIB6N60A uses the TO-220 FULLPAK package with an electrically insulated drain tab. It is rated for 2.5 kV_RMS isolation (60 s, 60 Hz), meeting reinforced insulation requirements for Class II power supplies per IEC 60950-1 and IEC 62368-1. This eliminates the need for external insulating hardware in compliant designs.

What is the typical body diode reverse recovery time (t_rr) of the IRFIB6N60A, and under what conditions is it measured?

The IRFIB6N60A body diode exhibits a typical reverse recovery time (t_rr) of 530 ns, with a maximum of 800 ns, measured at T_J = 25 °C, I_F = 9.2 A, and dI/dt = 100 A/μs. This parameter is critical for evaluating commutation losses in synchronous rectification or freewheeling paths in high-frequency converters.

Can the IRFIB6N60A be used in avalanche mode, and what energy level is guaranteed?

Yes, the IRFIB6N60A is fully specified for repetitive and single-pulse avalanche operation. It guarantees 290 mJ single-pulse avalanche energy (E_AS) and 6.0 mJ repetitive avalanche energy (E_AR) under test conditions defined in Figure 12. These values are validated and characterized - not typical estimates - making IRFIB6N60A suitable for unclamped inductive switching applications.

What is the gate threshold voltage range for the IRFIB6N60A, and how does it affect drive requirements?

The IRFIB6N60A has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA. This ensures reliable turn-on with standard 10 V gate drivers while providing sufficient noise margin against spurious triggering. The moderate threshold avoids the risk of partial enhancement seen in ultra-low-threshold devices, supporting robust operation in noisy industrial environments.

IRFIB6N60A Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack, Isolated Tab

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 5.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 750mOhm @ 3.3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 49 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

IRFIB6N60A FAQ

1.How can I place an order for IRFIB6N60A through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFIB6N60A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFIB6N60A reliable?

The price and inventory of IRFIB6N60A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFIB6N60A is usually 5 days.

3.What payment methods are accepted for IRFIB6N60A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFIB6N60A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFIB6N60A?

IRFIB6N60A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFIB6N60A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFIB6N60A?

For technical support, including IRFIB6N60A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFIB6N60A requirements.

6.How does Aetrix verify that IRFIB6N60A is sourced from the original manufacturer or authorized distributors?

All IRFIB6N60A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFIB6N60A meets industry standards.

7.What is the process for return or replacement of IRFIB6N60A?

All IRFIB6N60A units undergo pre-shipment inspection (PSI). If there is an issue with IRFIB6N60A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFIB6N60A part is unused and in its original packaging.

Return procedure for IRFIB6N60A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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