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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFIB6N60APBF

Name: IRFIB6N60APBF
Brand: Vishay Siliconix
SKU: IRFIB6N60APBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFIB6N60APBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack, Isolated Tab

Datasheet:: IRFIB6N60APBF.pdf

Description:: MOSFET N-CH 600V 5.5A TO220-3

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Product details

Overview

IRFIB6N60APBF from Vishay Siliconix is a 600 V, 5.5 A N-channel power MOSFET in TO-220 FULLPAK package, optimized for high-voltage isolation (2.5 kVRMS) and fast switching in offline SMPS topologies. It features R_DS(on) = 0.75 Ω at V_GS = 10 V, Q_g = 49 nC, and robust avalanche capability (E_AS = 290 mJ), enabling reliable operation in active-clamped forward converters.

For engineers reviewing the IRFIB6N60APBF datasheet, IRFIB6N60APBF pinout, IRFIB6N60APBF application, or IRFIB6N60APBF equivalent, key selection criteria include its 600 V blocking rating, low gate charge for simplified drive, body diode recovery time (t_rr = 530–800 ns), thermal resistance (R_thJC = 2.1 °C/W), and TO-220 FULLPAK isolation compliance.

Technical Context

This MOSFET employs planar vertical DMOS technology with fully characterized dynamic parameters including C_iss = 1400 pF, C_oss = 180 pF, and C_rss = 7.1 pF at V_DS = 25 V, supporting stable high-frequency switching up to several hundred kHz. Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) ensures compatibility with standard 10 V gate drivers.

The device integrates an intrinsic body diode rated for I_S = 5.5 A continuous and I_SM = 37 A pulsed, with V_SD = 1.5 V at I_S = 9.2 A and t_rr = 530–800 ns under specified dI/dt conditions - critical for minimizing switching losses in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports primary-side switching in universal-input AC/DC supplies up to 400 V DC bus
R_DS(on)	0.75 Ω @ V_GS = 10 V - determines conduction loss and heatsink sizing in continuous conduction mode
Q_g	49 nC - defines gate driver current requirement and switching speed trade-off
E_AS	290 mJ - enables unclamped inductive switching without failure in flyback or forward converter snubberless designs
t_rr	530–800 ns - impacts turn-on loss and EMI in hard-switched circuits with body diode commutation
R_thJC	2.1 °C/W - allows direct thermal interface to heatsink; enables 60 W dissipation at ΔT = 126 °C
V_ISO	2.5 kVRMS (60 s, 60 Hz) - meets reinforced insulation requirements for Class I/II AC/DC adapters and UPS systems

Pinout & Package

TO-220 FULLPAK package with isolated drain tab (2.5 kVRMS), 3-pin configuration, and copper-exposed backside for enhanced thermal transfer. Dimensions per Vishay Doc #91359: D ≈ 15.87 mm, E ≈ 10.10 mm, L ≈ 13.10 mm, G ≈ 6.70 mm.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level signal; requires ≤ 49 nC charge for full enhancement; sensitive to ESD
D (Drain)	High-voltage output terminal	Connected to primary winding or DC bus; electrically isolated from case by 2.5 kVRMS barrier
S (Source)	Power return and reference node	Common connection for gate driver return and current sensing; ties to power ground in non-isolated configurations

Key Features

Feature	Design Value
Low Q_g	49 nC enables use of low-cost, low-current gate drivers (e.g., TC4420) without external buffering
Avalanche ruggedness	Rated for repetitive I_AR = 9.2 A and E_AR = 6.0 mJ - supports reliable operation under transient overloads
Body diode characterization	Q_rr = 3.0–4.4 μC and t_rr = 530–800 ns allow accurate loss modeling in synchronous rectification or freewheeling paths
Thermal performance	R_thJC = 2.1 °C/W permits >50 W continuous dissipation with modest heatsinking in compact enclosures
High-voltage isolation	2.5 kVRMS withstand enables direct mounting on insulated heatsinks in medical or industrial AC/DC front-ends

Applications

Switch Mode Power Supply (SMPS)	Uninterruptible Power Supply (UPS)
Use Scenario: Primary-side switch in single-transistor forward converter operating from 375 V DC bus with 100 kHz switching frequency. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer to transformer primary; handles 600 V blocking and 9.2 A avalanche current during reset. Use Value: Low R_DS(on) reduces conduction loss; low Q_g minimizes driver complexity; 2.5 kVRMS isolation eliminates need for insulating pads in heatsink mounting.	Use Scenario: DC-link switching stage in online double-conversion UPS handling battery backup and grid synchronization. IC Role / Device Role / Timing Role: Bidirectional high-voltage switch managing battery charging and inverter output; operates in both linear and saturated regions during transition modes. Use Value: Robust dV/dt immunity (5.0 V/ns) prevents false triggering during grid transients; avalanche rating sustains short-circuit events during transfer switching.
High-Speed Power Switching	Industrial Isolated DC/DC Converter
Use Scenario: Solid-state relay replacement in programmable logic controller (PLC) output modules requiring <100 ns turn-off. IC Role / Device Role / Timing Role: Fast-turning discrete switch replacing electromechanical relays; driven by FPGA GPIO with 9.1 Ω gate resistor. Use Value: td(off) = 30 ns and tf = 22 ns enable sub-100 ns total turn-off; low C_oss = 180 pF limits capacitive coupling noise in noise-sensitive control environments.	Use Scenario: Isolated auxiliary supply in motor drive inverters providing gate bias for IGBTs with reinforced insulation. IC Role / Device Role / Timing Role: Primary-side switch in flyback converter delivering 24 V/1 A with 4 kV basic insulation between primary and secondary. Use Value: 2.5 kVRMS isolation meets IEC 61800-5-1 creepage/clearance requirements; TO-220 FULLPAK package simplifies safety-compliant mechanical layout.

Switch Mode Power Supply (SMPS)

Uninterruptible Power Supply (UPS)

Use Scenario: Primary-side switch in single-transistor forward converter operating from 375 V DC bus with 100 kHz switching frequency.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer to transformer primary; handles 600 V blocking and 9.2 A avalanche current during reset.

Use Value: Low R_DS(on) reduces conduction loss; low Q_g minimizes driver complexity; 2.5 kVRMS isolation eliminates need for insulating pads in heatsink mounting.

Use Scenario: DC-link switching stage in online double-conversion UPS handling battery backup and grid synchronization.

IC Role / Device Role / Timing Role: Bidirectional high-voltage switch managing battery charging and inverter output; operates in both linear and saturated regions during transition modes.

Use Value: Robust dV/dt immunity (5.0 V/ns) prevents false triggering during grid transients; avalanche rating sustains short-circuit events during transfer switching.

High-Speed Power Switching

Industrial Isolated DC/DC Converter

Use Scenario: Solid-state relay replacement in programmable logic controller (PLC) output modules requiring <100 ns turn-off.

IC Role / Device Role / Timing Role: Fast-turning discrete switch replacing electromechanical relays; driven by FPGA GPIO with 9.1 Ω gate resistor.

Use Value: td(off) = 30 ns and tf = 22 ns enable sub-100 ns total turn-off; low C_oss = 180 pF limits capacitive coupling noise in noise-sensitive control environments.

Use Scenario: Isolated auxiliary supply in motor drive inverters providing gate bias for IGBTs with reinforced insulation.

IC Role / Device Role / Timing Role: Primary-side switch in flyback converter delivering 24 V/1 A with 4 kV basic insulation between primary and secondary.

Use Value: 2.5 kVRMS isolation meets IEC 61800-5-1 creepage/clearance requirements; TO-220 FULLPAK package simplifies safety-compliant mechanical layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	600 V, R_DS(on) = 0.75 Ω, Q_g = 34 nC, TO-220FP package (non-isolated drain)	Lacks 2.5 kVRMS isolation; requires insulating washer for heatsink mounting	Preferred where cost sensitivity outweighs isolation needs and board space allows added insulation
FQP6N60	600 V, R_DS(on) = 0.75 Ω, Q_g = 42 nC, TO-220 package (standard, non-FULLPAK)	No reinforced isolation rating; R_thJC = 2.5 °C/W vs. 2.1 °C/W; lower E_AS (220 mJ)	Suitable for non-safety-critical SMPS where thermal margin is acceptable and isolation not mandated

Compared with STP6NK60ZFP and FQP6N60, the IRFIB6N60APBF delivers certified 2.5 kVRMS isolation and superior thermal resistance (2.1 °C/W), making it uniquely suited for safety-regulated, space-constrained, and thermally demanding high-voltage switch-mode applications where reliability under transient stress is critical.

Availability

IRFIB6N60APBF is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power systems, and industrial isolated DC/DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFIB6N60APBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.

The IRFIB6N60APBF belongs to Vishay's high-voltage power MOSFET product line, engineered for robust operation in offline AC/DC conversion, UPS, and industrial power systems where isolation, avalanche tolerance, and thermal efficiency are design-critical.

FAQ

What is the maximum continuous drain current rating for IRFIB6N60APBF at 100 °C case temperature?

The IRFIB6N60APBF has a continuous drain current rating of 3.5 A at T_C = 100 °C, derated from 5.5 A at 25 °C using a linear derating factor of 0.48 W/°C. This value reflects safe operation under sustained thermal load with proper heatsinking and accounts for R_DS(on) increase with junction temperature. The IRFIB6N60APBF must be mounted on a thermally adequate heatsink to maintain T_J ≤ 150 °C under full-load conditions.

Does IRFIB6N60APBF support logic-level gate drive?

No, the IRFIB6N60APBF is not a logic-level MOSFET. Its gate threshold voltage V_GS(th) ranges from 2.0 V to 4.0 V, but full enhancement requires V_GS = 10 V to achieve R_DS(on) = 0.75 Ω. Driving the IRFIB6N60APBF with only 3.3 V or 5 V will result in significantly higher on-resistance and excessive conduction loss. A dedicated 10 V gate driver is required for optimal performance of the IRFIB6N60APBF.

What is the significance of the "FULLPAK" designation in IRFIB6N60APBF's package?

The TO-220 FULLPAK designation indicates a modified TO-220 package with an electrically isolated drain tab rated for 2.5 kVRMS (60 s, 60 Hz), enabling direct mounting to a grounded heatsink without additional insulation. Unlike standard TO-220, the IRFIB6N60APBF's FULLPAK construction integrates dielectric isolation into the package mold, eliminating the need for mica washers or silicone pads. This improves thermal reliability and simplifies safety-compliant layout for the IRFIB6N60APBF.

Can IRFIB6N60APBF be used in synchronous rectification topologies?

The IRFIB6N60APBF is not recommended for synchronous rectification due to its relatively high R_DS(on) (0.75 Ω) and slow body diode recovery (t_rr = 530–800 ns). Synchronous rectifiers require low on-resistance and fast, soft-recovery body diodes to minimize reverse recovery loss. While the IRFIB6N60APBF can conduct in the reverse direction as a freewheeling device, its parameters make it inefficient compared to dedicated SR MOSFETs. For synchronous rectification, consider alternatives specifically optimized for that role instead of the IRFIB6N60APBF.

What is the peak diode recovery dV/dt rating for IRFIB6N60APBF, and why does it matter?

The IRFIB6N60APBF has a peak diode recovery dV/dt rating of 5.0 V/ns, measured under specified test conditions (T_J = 25 °C, I_S = 9.2 A, dI/dt = 100 A/μs). This parameter quantifies the device's ability to withstand rapid voltage rise across the drain-source terminals during body diode commutation without spurious turn-on. Exceeding this dV/dt may cause false triggering or latch-up, especially in high-frequency hard-switched converters - a key reliability consideration when designing with the IRFIB6N60APBF.

IRFIB6N60APBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack, Isolated Tab

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 5.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 750mOhm @ 3.3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 49 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

IRFIB6N60APBF FAQ

1.How can I place an order for IRFIB6N60APBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFIB6N60APBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFIB6N60APBF reliable?

The price and inventory of IRFIB6N60APBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFIB6N60APBF is usually 5 days.

3.What payment methods are accepted for IRFIB6N60APBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFIB6N60APBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFIB6N60APBF?

IRFIB6N60APBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFIB6N60APBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFIB6N60APBF?

For technical support, including IRFIB6N60APBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFIB6N60APBF requirements.

6.How does Aetrix verify that IRFIB6N60APBF is sourced from the original manufacturer or authorized distributors?

All IRFIB6N60APBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFIB6N60APBF meets industry standards.

7.What is the process for return or replacement of IRFIB6N60APBF?

All IRFIB6N60APBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFIB6N60APBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFIB6N60APBF part is unused and in its original packaging.

Return procedure for IRFIB6N60APBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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