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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFIB7N50A

Name: IRFIB7N50A
Brand: Vishay Siliconix
SKU: IRFIB7N50A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFIB7N50A

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack, Isolated Tab

Datasheet:: IRFIB7N50A.pdf

Description:: MOSFET N-CH 500V 6.6A TO220-3

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Product details

Overview

IRFIB7N50A from Vishay Siliconix is a 500 V, 6.6 A N-channel power MOSFET in TO-220 FULLPAK package, optimized for high-voltage isolation (2.5 kVRMS) and fast switching in SMPS topologies including two-transistor forward and PFC boost converters. It features 0.52 Ω R_DS(on) at V_GS = 10 V, 52 nC total gate charge, and robust avalanche capability (275 mJ single-pulse).

For engineers reviewing the IRFIB7N50A datasheet, IRFIB7N50A pinout, IRFIB7N50A application, or IRFIB7N50A equivalent, this device is selected for high-reliability, medium-power DC-DC conversion where dV/dt ruggedness (6.9 V/ns), low Q_g, and fully characterized C_oss/Q_rr are critical to reduce switching loss and EMI in isolated power stages.

Technical Context

The IRFIB7N50A employs a planar high-voltage silicon process with optimized cell layout to achieve stable 500 V breakdown while maintaining low on-resistance and controlled capacitance profiles. Its gate threshold voltage (2.0–4.0 V) ensures reliable turn-on with standard 10 V drivers, and its effective output capacitance (C_{oss eff.} = 97 pF) is specified across 0–400 V for accurate hard-switching energy calculation.

Thermal design is supported by a low junction-to-case thermal resistance (R_thJC = 2.1 °C/W) and linear derating (0.48 W/°C above 25 °C), enabling sustained 4.2 A operation at 100 °C case temperature. The integrated body diode exhibits 510–770 ns reverse recovery time and 3.4–5.1 μC Q_rr, making it suitable for synchronous or quasi-resonant topologies requiring predictable diode behavior.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - Withstands full bridge or PFC bus voltages up to 400 V DC with margin for transients and ringing.
R_DS(on)	0.52 Ω @ V_GS = 10 V - Enables <1.5 W conduction loss at 6.6 A, supporting compact heatsink designs.
Q_g	52 nC - Low gate drive power requirement; compatible with standard PWM controllers without gate driver boosting.
E_AS	275 mJ - Supports unclamped inductive switching in flyback or forward converters without external snubbers.
C_{oss eff.}	97 pF - Fixed capacitance value calibrated to match actual V_DS rise-time energy from 0 to 400 V.
dV/dt rating	6.9 V/ns - Confirmed avalanche and dynamic dV/dt ruggedness prevents false turn-on in high-noise, high-dV/dt environments.
T_J range	−55 to +150 °C - Qualified for industrial and telecom power supplies operating under wide ambient conditions.

Pinout & Package

IRFIB7N50A is housed in a TO-220 FULLPAK package with exposed drain tab for low-inductance, high-current mounting. The package provides 2.5 kVRMS isolation between drain and source terminals for 60 s at 60 Hz, verified per IEC 60950.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Accepts 0–10 V logic-level signals; 13 nC Q_gs enables fast turn-on with minimal driver stress.
D (Drain)	High-side switch node	Connected to HV bus; electrically isolated from mounting surface; rated for 500 V blocking.
S (Source)	Power return / reference	Common node for gate drive return and current sensing; tied to PCB ground plane for low-noise switching.

Key Features

Feature	Design Value
Low Q_g (52 nC)	Reduces gate drive power and allows use of cost-effective IC drivers without external buffering.
Fully characterized C_oss & Q_rr	Enables precise loss modeling in hard-switched and quasi-resonant topologies across operating conditions.
Improved avalanche ruggedness	275 mJ single-pulse E_AS supports reliable operation during overloads or startup surges in SMPS.
High dV/dt immunity (6.9 V/ns)	Prevents spurious turn-on in high-frequency, high-isolation converters without added gate resistors.
TO-220 FULLPAK isolation	2.5 kVRMS isolation eliminates need for insulating pads in chassis-grounded power supply designs.

Applications

Two-Transistor Forward Converter	Active PFC Boost Stage
Use Scenario: Primary-side switch in telecom rectifier modules delivering 300–500 W with 380–400 V DC output. IC Role / Device Role / Timing Role: High-side main switch handling 400 V bus, switching at 100–200 kHz with zero-voltage transition assistance. Use Value: 0.52 Ω R_DS(on) minimizes conduction loss at full load; 275 mJ E_AS absorbs leakage inductance spikes during reset.	Use Scenario: Boost switch in universal-input (90–264 V AC) server PSU front-end delivering 3.3 kW with >98% efficiency. IC Role / Device Role / Timing Role: Fast-turning, high-voltage switch operating in continuous conduction mode (CCM) at 65–100 kHz. Use Value: 52 nC Q_g and 97 pF C_{oss eff.} enable low switching loss; 6.9 V/ns dV/dt rating maintains stability under high di/dt line transients.
Uninterruptible Power Supply (UPS)	Industrial HV DC-DC Isolated Converter
Use Scenario: Inverter-stage switch in online double-conversion UPS systems with 48 V battery backup and 230 V AC output. IC Role / Device Role / Timing Role: Half-bridge leg switch managing bidirectional energy flow during transfer and battery discharge modes. Use Value: Robust body diode (Q_rr = 3.4–5.1 μC, t_rr = 510–770 ns) supports synchronous rectification and regenerative braking without external diodes.	Use Scenario: Primary-side switch in 1.5 kV isolated DC-DC converter for railway traction control systems. IC Role / Device Role / Timing Role: High-reliability, high-isolation switch operating at 50–80 kHz with reinforced insulation requirements. Use Value: TO-220 FULLPAK's 2.5 kVRMS isolation meets IEC 61800-5-1 creepage/clearance mandates; 150 °C T_J rating supports extended life at elevated ambient.

Two-Transistor Forward Converter

Active PFC Boost Stage

Use Scenario: Primary-side switch in telecom rectifier modules delivering 300–500 W with 380–400 V DC output.

IC Role / Device Role / Timing Role: High-side main switch handling 400 V bus, switching at 100–200 kHz with zero-voltage transition assistance.

Use Value: 0.52 Ω R_DS(on) minimizes conduction loss at full load; 275 mJ E_AS absorbs leakage inductance spikes during reset.

Use Scenario: Boost switch in universal-input (90–264 V AC) server PSU front-end delivering 3.3 kW with >98% efficiency.

IC Role / Device Role / Timing Role: Fast-turning, high-voltage switch operating in continuous conduction mode (CCM) at 65–100 kHz.

Use Value: 52 nC Q_g and 97 pF C_{oss eff.} enable low switching loss; 6.9 V/ns dV/dt rating maintains stability under high di/dt line transients.

Uninterruptible Power Supply (UPS)

Industrial HV DC-DC Isolated Converter

Use Scenario: Inverter-stage switch in online double-conversion UPS systems with 48 V battery backup and 230 V AC output.

IC Role / Device Role / Timing Role: Half-bridge leg switch managing bidirectional energy flow during transfer and battery discharge modes.

Use Value: Robust body diode (Q_rr = 3.4–5.1 μC, t_rr = 510–770 ns) supports synchronous rectification and regenerative braking without external diodes.

Use Scenario: Primary-side switch in 1.5 kV isolated DC-DC converter for railway traction control systems.

IC Role / Device Role / Timing Role: High-reliability, high-isolation switch operating at 50–80 kHz with reinforced insulation requirements.

Use Value: TO-220 FULLPAK's 2.5 kVRMS isolation meets IEC 61800-5-1 creepage/clearance mandates; 150 °C T_J rating supports extended life at elevated ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V, 4.5 A, R_DS(on) = 0.95 Ω, Q_g = 23 nC, TO-220FP package (no isolation)	Lacks 2.5 kVRMS isolation; requires insulating washer; lower current rating limits power density.	Choose when isolation is handled externally and lower gate charge is prioritized over current capacity.
IXTH7N50L	500 V, 7 A, R_DS(on) = 0.65 Ω, Q_g = 48 nC, TO-247 package (no isolation)	Higher R_DS(on) and larger footprint; no built-in isolation; higher thermal resistance (R_thJC = 1.5 °C/W but larger case)	Choose for higher peak current needs where board space permits and isolation is implemented separately.

Compared with STP5NK50ZFP and IXTH7N50L, the IRFIB7N50A uniquely integrates 2.5 kVRMS isolation in TO-220 FULLPAK, delivers superior current density (6.6 A at 0.52 Ω), and provides fully characterized C_{oss eff.} and E_AS-critical for predictive loss modeling in high-reliability SMPS designs.

Availability

IRFIB7N50A is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power supplies, and high-speed power switching applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFIB7N50A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.

The IRFIB7N50A belongs to Vishay's high-voltage power MOSFET product line, engineered for industrial and telecom power conversion where isolation integrity, avalanche survivability, and consistent switching performance are mandatory.

FAQ

What is the maximum continuous drain current for IRFIB7N50A at 100 °C case temperature?

The IRFIB7N50A supports 4.2 A continuous drain current at TC = 100 °C, as defined by thermal derating from its 6.6 A rating at 25 °C. This value is limited by junction temperature and must be validated against actual heatsink performance and ambient conditions in the final design. The linear derating factor is 0.48 W/°C, and the maximum power dissipation at 25 °C is 60 W. IRFIB7N50A thermal performance relies on proper mounting to a low-thermal-resistance heatsink.

Does IRFIB7N50A have built-in high-voltage isolation, and what standard does it meet?

Yes, the IRFIB7N50A in TO-220 FULLPAK package provides 2.5 kVRMS isolation between drain and source terminals for 60 seconds at 60 Hz, meeting basic reinforced insulation requirements per IEC 60950. This isolation is intrinsic to the package construction and eliminates the need for external insulating hardware in many industrial power supply designs. IRFIB7N50A achieves this without compromising thermal or electrical performance.

What is the typical body diode reverse recovery charge (Qrr) of IRFIB7N50A, and how does it affect hard-switched designs?

The IRFIB7N50A has a body diode Q_rr of 3.4–5.1 μC, measured at TJ = 25 °C, IF = 11 A, and dI/dt = 100 A/μs. This value directly impacts turn-off loss and voltage overshoot in hard-switched topologies like forward or LLC converters. Lower Q_rr reduces commutation losses and EMI; IRFIB7N50A's specified Q_rr enables predictable snubberless operation in well-designed layouts. IRFIB7N50A data includes full characterization across temperature and current.

Can IRFIB7N50A be used as a direct replacement for IRFB11N50A in existing designs?

No, IRFIB7N50A is not a direct replacement for IRFB11N50A. While both are 500 V N-channel MOSFETs in TO-220 variants, IRFIB7N50A has higher R_DS(on) (0.52 Ω vs. 0.44 Ω), lower ID (6.6 A vs. 11 A), and different gate charge profile (52 nC vs. 71 nC). The IRFIB7N50A datasheet explicitly references IRFB11N50A test conditions for some parameters but confirms distinct performance. IRFIB7N50A is optimized for isolation-critical, medium-power applications-not high-current drop-in use.

What is the gate-source threshold voltage range for IRFIB7N50A, and why does it matter for drive circuit design?

The IRFIB7N50A has a V_GS(th) range of 2.0–4.0 V at ID = 250 μA, ensuring reliable turn-on with standard 10 V gate drivers while avoiding accidental activation from noise. This range supports compatibility with microcontroller GPIOs (with level-shifting) and dedicated gate drivers. Tighter V_GS(th) distribution improves system consistency, and IRFIB7N50A's specification guarantees full enhancement at V_GS ≥ 10 V, where R_DS(on) is guaranteed at 0.52 Ω.

IRFIB7N50A Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack, Isolated Tab

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 6.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 520mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 52 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1423 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

IRFIB7N50A FAQ

1.How can I place an order for IRFIB7N50A through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFIB7N50A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFIB7N50A reliable?

The price and inventory of IRFIB7N50A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFIB7N50A is usually 5 days.

3.What payment methods are accepted for IRFIB7N50A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFIB7N50A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFIB7N50A?

IRFIB7N50A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFIB7N50A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFIB7N50A?

For technical support, including IRFIB7N50A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFIB7N50A requirements.

6.How does Aetrix verify that IRFIB7N50A is sourced from the original manufacturer or authorized distributors?

All IRFIB7N50A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFIB7N50A meets industry standards.

7.What is the process for return or replacement of IRFIB7N50A?

All IRFIB7N50A units undergo pre-shipment inspection (PSI). If there is an issue with IRFIB7N50A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFIB7N50A part is unused and in its original packaging.

Return procedure for IRFIB7N50A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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