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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFIB7N50APBF

Name: IRFIB7N50APBF
Brand: Vishay Siliconix
SKU: IRFIB7N50APBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFIB7N50APBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack, Isolated Tab

Datasheet:: IRFIB7N50APBF.pdf

Description:: MOSFET N-CH 500V 6.6A TO220-3

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Product details

Overview

IRFIB7N50APBF from Vishay Siliconix is a 500 V, 6.6 A N-channel power MOSFET in TO-220 FULLPAK package, optimized for high-voltage switching in SMPS and UPS systems. It delivers R_DS(on) = 0.52 Ω at V_GS = 10 V, Q_g = 52 nC, and features 2.5 kV_RMS isolation rating with enhanced avalanche ruggedness.

For engineers reviewing the IRFIB7N50APBF datasheet, IRFIB7N50APBF pinout, IRFIB7N50APBF application, or IRFIB7N50APBF equivalent, this device is selected for high-reliability, medium-power, high-voltage DC-DC conversion where low gate charge and robust dV/dt immunity are critical.

Technical Context

This MOSFET uses planar high-voltage silicon technology with fully characterized avalanche performance (E_AS = 275 mJ) and dynamic dV/dt ruggedness up to 6.9 V/ns. Its C_{oss eff.} = 97 pF enables predictable hard-switching behavior in forward and bridge topologies.

The device integrates a fast body diode (t_rr = 510–770 ns, Q_rr = 3.4–5.1 µC) and supports unclamped inductive switching at I_AS = 11 A. Thermal resistance R_thJC = 2.1 °C/W ensures efficient heat transfer to heatsinks in continuous 6.6 A operation at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - Supports primary-side switching in 400 V DC bus applications without derating.
R_DS(on)	0.52 Ω @ V_GS = 10 V - Enables <6.6 A continuous conduction with ≤3.4 W conduction loss at 25 °C case temperature.
Q_g	52 nC - Reduces gate driver power requirement and simplifies drive circuit design for 100–500 kHz SMPS.
E_AS	275 mJ - Withstands single-pulse inductive energy events common in PFC and forward converter turn-off.
t_r/t_f	35 ns / 28 ns - Supports fast switching transitions while maintaining EMI control in hard-switched topologies.
T_J Range	−55 to +150 °C - Rated for industrial ambient environments and thermally demanding enclosed power enclosures.
I_D (T_C = 100 °C)	4.2 A - Defines usable current limit under sustained high-temperature heatsink conditions.

Pinout & Package

IRFIB7N50APBF is housed in a TO-220 FULLPAK package with exposed drain tab for thermal and electrical connection. The package provides 2.5 kV_RMS isolation between drain and source/ground pins for reinforced insulation in offline AC-DC designs.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives 10 V logic-level signal to fully enhance channel; threshold V_GS(th) = 2.0–4.0 V ensures reliable turn-on with standard drivers.
D (Drain)	High-side power terminal	Connected to high-voltage DC bus (up to 500 V); electrically and thermally tied to metal tab for heatsink mounting.
S (Source)	Power return / reference	Serves as local ground reference for gate drive; body diode anode; must be routed with low-inductance path in high-dI/dt circuits.

Key Features

Feature	Design Value
Low Q_g (52 nC)	Reduces gate driver IC stress and enables use of cost-effective 1-A peak drivers in 300–500 kHz converters.
Enhanced dV/dt ruggedness (6.9 V/ns)	Prevents false turn-on during high-slew-rate commutation in half-bridge configurations without snubbers.
Characterized C_{oss eff.} (97 pF)	Enables accurate dead-time calculation and ZVS transition modeling in resonant LLC and phase-shifted full-bridge designs.
Fast body diode (t_rr = 510–770 ns)	Minimizes reverse recovery loss and voltage overshoot during synchronous rectification or freewheeling in boost/PFC stages.
2.5 kV_RMS isolation (60 s, 60 Hz)	Meets reinforced insulation requirements per IEC 60950-1 and IEC 62368-1 for Class I AC-DC adapters and server PSUs.

Applications

Server PSU Primary Switch	Industrial UPS Inverter Stage
Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating from 380 V DC bus in front-end two-transistor forward topology. IC Role / Device Role / Timing Role: Primary-side high-side switch controlling energy transfer into transformer; operates at 250 kHz with 50% duty cycle. Use Value: Low R_DS(on) and Q_g reduce conduction and switching losses; 500 V rating accommodates 380 V DC + 20% surge margin.	Use Scenario: 3-phase online UPS inverter stage delivering clean 230 V AC output during grid failure, using full-bridge configuration. IC Role / Device Role / Timing Role: High-side leg switch in each phase leg; handles bidirectional current during regeneration and load transients. Use Value: Robust avalanche capability (E_AS = 275 mJ) absorbs inductive kickback during short-circuit fault clearing without failure.
PFC Boost Converter	Medical Isolated DC-DC Module
Use Scenario: Active clamp forward PFC stage in 1 kW medical power system requiring >98% efficiency and low THD. IC Role / Device Role / Timing Role: Boost switch operating in continuous conduction mode (CCM) at 100 kHz with variable duty cycle. Use Value: Characterized C_oss and low Q_gd/Q_gs ratio improve light-load efficiency and reduce EMI generation across wide line/load range.	Use Scenario: 24 V isolated DC-DC module for patient-connected diagnostic equipment requiring reinforced insulation and low leakage. IC Role / Device Role / Timing Role: Primary-side switch in flyback topology with 2.5 kV_RMS barrier between primary and secondary windings. Use Value: Certified 2.5 kV_RMS isolation (60 s, 60 Hz) satisfies IEC 60601-1 creepage/clearance requirements without additional insulation layers.

Server PSU Primary Switch

Industrial UPS Inverter Stage

Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating from 380 V DC bus in front-end two-transistor forward topology.

IC Role / Device Role / Timing Role: Primary-side high-side switch controlling energy transfer into transformer; operates at 250 kHz with 50% duty cycle.

Use Value: Low R_DS(on) and Q_g reduce conduction and switching losses; 500 V rating accommodates 380 V DC + 20% surge margin.

Use Scenario: 3-phase online UPS inverter stage delivering clean 230 V AC output during grid failure, using full-bridge configuration.

IC Role / Device Role / Timing Role: High-side leg switch in each phase leg; handles bidirectional current during regeneration and load transients.

Use Value: Robust avalanche capability (E_AS = 275 mJ) absorbs inductive kickback during short-circuit fault clearing without failure.

PFC Boost Converter

Medical Isolated DC-DC Module

Use Scenario: Active clamp forward PFC stage in 1 kW medical power system requiring >98% efficiency and low THD.

IC Role / Device Role / Timing Role: Boost switch operating in continuous conduction mode (CCM) at 100 kHz with variable duty cycle.

Use Value: Characterized C_oss and low Q_gd/Q_gs ratio improve light-load efficiency and reduce EMI generation across wide line/load range.

Use Scenario: 24 V isolated DC-DC module for patient-connected diagnostic equipment requiring reinforced insulation and low leakage.

IC Role / Device Role / Timing Role: Primary-side switch in flyback topology with 2.5 kV_RMS barrier between primary and secondary windings.

Use Value: Certified 2.5 kV_RMS isolation (60 s, 60 Hz) satisfies IEC 60601-1 creepage/clearance requirements without additional insulation layers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	R_DS(on) = 0.95 Ω @ 10 V; lower Q_g = 27 nC; Zener-protected gate; TO-220FP package.	Better gate protection but higher on-resistance limits max current to 4.5 A continuous; suited for lower-power PFC.	Choose STP5NK50ZFP when gate robustness against overvoltage transients outweighs conduction loss priority.
IXTH7N50L	R_DS(on) = 0.65 Ω @ 10 V; higher E_AS = 420 mJ; TO-247 package; no isolation rating specified.	Superior avalanche margin but lacks certified 2.5 kV_RMS isolation; requires external isolation barriers in medical/UPS designs.	Choose IXTH7N50L only when maximum ruggedness is required and isolation is handled at board/system level.

Compared with STP5NK50ZFP and IXTH7N50L, IRFIB7N50APBF uniquely balances low R_DS(on), certified high-voltage isolation, and industry-standard TO-220 FULLPAK thermal performance-making it optimal for space-constrained, safety-critical 500 V SMPS where both efficiency and regulatory compliance are non-negotiable.

Availability

IRFIB7N50APBF is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power systems, and high-voltage isolation modules requiring stable component supply across multi-year production cycles.

Supply support for IRFIB7N50APBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The IRFIB7N50APBF belongs to Vishay's high-voltage power MOSFET product line, engineered for reliability in offline AC-DC, UPS, and industrial power conversion where safety isolation, avalanche tolerance, and thermal stability are essential.

FAQ

What is the maximum continuous drain current for IRFIB7N50APBF at 100 °C case temperature?

The IRFIB7N50APBF supports 4.2 A continuous drain current at T_C = 100 °C, as defined by its linear derating factor of 0.48 W/°C and maximum power dissipation of 60 W at T_C = 25 °C. This rating ensures safe operation in thermally constrained enclosures without active cooling.

Does IRFIB7N50APBF have a built-in body diode, and what are its key recovery parameters?

Yes, IRFIB7N50APBF includes an integral body diode rated for 6.6 A continuous and 44 A pulsed conduction. Its reverse recovery time t_rr is 510–770 ns and Q_rr is 3.4–5.1 µC at T_J = 25 °C, IF = 11 A, and dI/dt = 100 A/µs-critical for minimizing loss in PFC and freewheeling paths.

What isolation voltage rating does IRFIB7N50APBF meet, and under what test conditions?

The IRFIB7N50APBF meets 2.5 kV_RMS high-voltage isolation between drain and source/substrate terminals, verified per IEC 60950-1 at 60 Hz for 60 seconds. This rating applies to the TO-220 FULLPAK package construction and supports reinforced insulation in Class I AC-DC power supplies.

Is IRFIB7N50APBF suitable for use in zero-voltage switching (ZVS) topologies?

Yes, IRFIB7N50APBF is suitable for ZVS applications due to its well-characterized C_{oss eff.} = 97 pF and low Q_gd/Q_gs ratio (18/13), enabling predictable resonant timing. Its 500 V V_DS rating and 275 mJ E_AS provide margin for transient voltage spikes during soft-switching transitions.

What is the gate threshold voltage range for IRFIB7N50APBF, and how does it affect drive compatibility?

The gate threshold voltage V_GS(th) for IRFIB7N50APBF is 2.0–4.0 V at I_D = 250 µA, confirming compatibility with standard 10 V gate drivers. This range ensures full enhancement at V_GS = 10 V while avoiding unintended turn-on from noise or leakage in high-noise power environments.

IRFIB7N50APBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack, Isolated Tab

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 6.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 520mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 52 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1423 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

IRFIB7N50APBF FAQ

1.How can I place an order for IRFIB7N50APBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFIB7N50APBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFIB7N50APBF reliable?

The price and inventory of IRFIB7N50APBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFIB7N50APBF is usually 5 days.

3.What payment methods are accepted for IRFIB7N50APBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFIB7N50APBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFIB7N50APBF?

IRFIB7N50APBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFIB7N50APBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFIB7N50APBF?

For technical support, including IRFIB7N50APBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFIB7N50APBF requirements.

6.How does Aetrix verify that IRFIB7N50APBF is sourced from the original manufacturer or authorized distributors?

All IRFIB7N50APBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFIB7N50APBF meets industry standards.

7.What is the process for return or replacement of IRFIB7N50APBF?

All IRFIB7N50APBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFIB7N50APBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFIB7N50APBF part is unused and in its original packaging.

Return procedure for IRFIB7N50APBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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