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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFIB7N50LPBF

Name: IRFIB7N50LPBF
Brand: Vishay Siliconix
SKU: IRFIB7N50LPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFIB7N50LPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack, Isolated Tab

Datasheet:: IRFIB7N50LPBF.pdf

Description:: MOSFET N-CH 500V 6.8A TO220-3

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Product details

Overview

IRFIB7N50LPBF from Vishay Siliconix is a 500 V, 6.8 A N-channel power MOSFET in TO-220 FULLPAK package, featuring 0.32 Ω R_DS(on) at V_GS = 10 V, 92 nC total gate charge, and enhanced dV/dt ruggedness (24 V/ns) for zero-voltage switching SMPS and telecom power supplies.

For engineers reviewing the IRFIB7N50LPBF datasheet, IRFIB7N50LPBF pinout, IRFIB7N50LPBF application, or IRFIB7N50LPBF equivalent, key selection criteria include avalanche energy rating (550 mJ), super-fast body diode recovery (85–130 ns trr), gate threshold voltage range (3.0–5.0 V), and thermal resistance (R_thJC = 2.69 °C/W).

Technical Context

This MOSFET employs a planar silicon process with optimized cell layout to achieve high dV/dt immunity and low Q_gd/Q_g ratio (44/92 nC), supporting robust ZVS operation. Its elevated V_GS(th) minimizes false turn-on in noisy environments.

The integrated body diode exhibits fast reverse recovery (Q_rr = 280–420 nC at 25 °C) and low forward voltage (V_SD = 1.5 V at 6.8 A), eliminating external freewheeling diodes in resonant topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports primary-side switching in 400 V DC bus telecom and UPS applications
R_DS(on)	0.32 Ω max at V_GS = 10 V - enables low conduction loss at 6.8 A continuous drain current
Q_g	92 nC - determines gate driver power requirement and switching speed in hard- and soft-switched converters
E_AS	550 mJ - specifies single-pulse unclamped inductive avalanche capability without failure
dV/dt	24 V/ns - ensures reliable operation under high dv/dt stress in ZVS circuits
T_J Range	−55 to +150 °C - supports industrial and telecom ambient conditions with derated power dissipation
R_thJC	2.69 °C/W - defines thermal path efficiency from junction to case for heatsink sizing

Pinout & Package

TO-220 FULLPAK package with isolated tab (drain-connected), standard 3-lead through-hole mounting, and RoHS-compliant lead-free finish.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal requiring ≤ ±30 V bias; 24 nC Qgs enables moderate-speed drive with low-power gate drivers
D	Drain	Main high-side power terminal; electrically connected to metal tab for low-inductance heat transfer
S	Source	Power return and reference node; ties to PCB ground plane; body diode anode

Key Features

Feature	Design Value
Super-fast body diode	trr = 85–130 ns and Qrr = 280–420 nC enable elimination of external diodes in ZVS flyback and LLC converters
Enhanced dV/dt ruggedness	24 V/ns rating prevents spurious turn-on during high-slew-rate switching transitions
Elevated gate threshold	V_GS(th) = 3.0–5.0 V improves noise immunity versus standard 2–4 V MOSFETs in EMI-prone power stages
Low Q_gd/Q_g ratio	44/92 nC = 0.48 reduces Miller plateau duration and improves controllability during switching

Applications

Telecom Power Supplies	Uninterruptible Power Supplies (UPS)
Use Scenario: Primary-side switch in 48 V input, 380 V DC bus telecom rectifiers with phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: High-voltage N-channel switching device handling 6.8 A RMS current and 500 V blocking. Use Value: 550 mJ avalanche energy withstands transient overvoltage events during line surges without snubber redesign.	Use Scenario: Inverter stage H-bridge switch in online double-conversion UPS systems operating from 380–400 V DC bus. IC Role / Device Role / Timing Role: Fast-recovery body diode supports bidirectional current flow during dead-time commutation. Use Value: 1.5 V V_SD and 85 ns trr reduce conduction and recovery losses compared to discrete diode solutions.
Zero Voltage Switching SMPS	Motor Control Applications
Use Scenario: Resonant switch in LLC half-bridge converter for server PSU with 12 V/200 A output. IC Role / Device Role / Timing Role: ZVS-capable power switch leveraging low Q_g and fast body diode for <1% switching loss at 300 kHz. Use Value: 92 nC Q_g allows use of low-cost gate drivers (e.g., UCC2732x) without external boost circuitry.	Use Scenario: High-side switch in 3-phase BLDC inverter for industrial pumps with 400 V DC link. IC Role / Device Role / Timing Role: 500 V blocking device driving motor phases with repetitive avalanche tolerance during regenerative braking. Use Value: 4.6 mJ repetitive avalanche energy (E_AR) sustains safe operation during short-circuit fault conditions.

Telecom Power Supplies

Uninterruptible Power Supplies (UPS)

Use Scenario: Primary-side switch in 48 V input, 380 V DC bus telecom rectifiers with phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: High-voltage N-channel switching device handling 6.8 A RMS current and 500 V blocking.

Use Value: 550 mJ avalanche energy withstands transient overvoltage events during line surges without snubber redesign.

Use Scenario: Inverter stage H-bridge switch in online double-conversion UPS systems operating from 380–400 V DC bus.

IC Role / Device Role / Timing Role: Fast-recovery body diode supports bidirectional current flow during dead-time commutation.

Use Value: 1.5 V V_SD and 85 ns trr reduce conduction and recovery losses compared to discrete diode solutions.

Zero Voltage Switching SMPS

Motor Control Applications

Use Scenario: Resonant switch in LLC half-bridge converter for server PSU with 12 V/200 A output.

IC Role / Device Role / Timing Role: ZVS-capable power switch leveraging low Q_g and fast body diode for <1% switching loss at 300 kHz.

Use Value: 92 nC Q_g allows use of low-cost gate drivers (e.g., UCC2732x) without external boost circuitry.

Use Scenario: High-side switch in 3-phase BLDC inverter for industrial pumps with 400 V DC link.

IC Role / Device Role / Timing Role: 500 V blocking device driving motor phases with repetitive avalanche tolerance during regenerative braking.

Use Value: 4.6 mJ repetitive avalanche energy (E_AR) sustains safe operation during short-circuit fault conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V, 4.5 A, R_DS(on) = 0.58 Ω, Q_g = 34 nC, TO-220FP package	Lower current rating and higher on-resistance; lower gate charge enables faster switching but reduced conduction efficiency	Prefer for space-constrained designs where gate drive simplicity outweighs conduction loss
IXTH7N50L	500 V, 7.0 A, R_DS(on) = 0.30 Ω, Q_g = 85 nC, TO-247 package	Higher current and slightly lower R_DS(on); TO-247 offers better thermal performance but larger footprint	Choose when junction temperature must stay below 130 °C under sustained 7 A load

Compared with IRFIB7N50LPBF, STP5NK50ZFP trades conduction loss for gate drive simplicity, while IXTH7N50L provides marginally better thermal and current capability at the cost of board area and mounting complexity.

Availability

IRFIB7N50LPBF is available at Aetrix Electronics and suitable for zero-voltage switching SMPS, telecom and server power supplies, and uninterruptible power supplies requiring stable component supply and long-term industrial availability.

Supply support for IRFIB7N50LPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and ruggedness.

The IRFIB7N50LPBF belongs to Vishay's "Fast Body Diode" power MOSFET family, engineered specifically for soft-switching topologies requiring high dV/dt immunity and low recovery charge in telecom and industrial power conversion.

FAQ

What is the maximum continuous drain current for IRFIB7N50LPBF at 100 °C case temperature?

The IRFIB7N50LPBF supports 4.3 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220 FULLPAK package and ensures safe operation within its 2.69 °C/W junction-to-case thermal resistance. Engineers must verify heatsink design to maintain case temperature at or below this limit during full-load operation. The IRFIB7N50LPBF datasheet confirms this value under standard test conditions with no additional derating factors applied.

Does IRFIB7N50LPBF have a lead-free finish and RoHS compliance?

Yes, the IRFIB7N50LPBF features a lead (Pb)-free finish and is RoHS compliant, as explicitly stated in the Product Summary and Ordering Information sections of the Vishay datasheet (Document Number: 91177). The "PbF" suffix in the part number denotes lead-free packaging, and the device meets EU RoHS Directive 2011/65/EU requirements. This makes the IRFIB7N50LPBF suitable for environmentally regulated industrial and telecom equipment without requiring exemptions.

What is the typical body diode reverse recovery time (trr) of IRFIB7N50LPBF at 125 °C junction temperature?

The IRFIB7N50LPBF exhibits a body diode reverse recovery time (t_rr) of 130–200 ns at T_J = 125 °C, per the Specifications table under Drain-Source Body Diode Characteristics. This value is measured at I_F = 6.8 A and dI/dt = 100 A/µs. The increase from 85–130 ns at 25 °C reflects temperature-dependent carrier lifetime extension. This t_rr enables reliable ZVS operation in high-frequency resonant converters even under elevated thermal stress. The IRFIB7N50LPBF maintains consistent diode behavior across its rated temperature range.

Can IRFIB7N50LPBF be used in avalanche mode for clamping protection?

Yes, the IRFIB7N50LPBF is rated for both single-pulse (E_AS = 550 mJ) and repetitive (E_AR = 4.6 mJ) avalanche operation, as confirmed in the Absolute Maximum Ratings table. It supports controlled avalanche under inductive load conditions without degradation when operated within specified limits (I_AR = 6.8 A, pulse width ≤ 300 µs, duty cycle ≤ 2 %). Designers must ensure junction temperature remains ≤150 °C during avalanche events. The IRFIB7N50LPBF's ruggedness makes it suitable for overvoltage protection in motor drives and SMPS without external snubbers.

What is the gate-source leakage current specification for IRFIB7N50LPBF?

The gate-source leakage current (I_GSS) for IRFIB7N50LPBF is specified as ±100 nA maximum at V_GS = ±30 V and T_J = 25 °C, per the Static Electrical Characteristics table. This low leakage ensures minimal gate drive current demand and stable turn-off behavior in high-impedance gate drive circuits. The IRFIB7N50LPBF maintains this specification across its full operating temperature range, supporting reliable operation in precision timing and low-power control applications where gate leakage could affect switching thresholds.

IRFIB7N50LPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack, Isolated Tab

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 6.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 4.1A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 92 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2220 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 46W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

IRFIB7N50LPBF FAQ

1.How can I place an order for IRFIB7N50LPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFIB7N50LPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFIB7N50LPBF reliable?

The price and inventory of IRFIB7N50LPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFIB7N50LPBF is usually 5 days.

3.What payment methods are accepted for IRFIB7N50LPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFIB7N50LPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFIB7N50LPBF?

IRFIB7N50LPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFIB7N50LPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFIB7N50LPBF?

For technical support, including IRFIB7N50LPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFIB7N50LPBF requirements.

6.How does Aetrix verify that IRFIB7N50LPBF is sourced from the original manufacturer or authorized distributors?

All IRFIB7N50LPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFIB7N50LPBF meets industry standards.

7.What is the process for return or replacement of IRFIB7N50LPBF?

All IRFIB7N50LPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFIB7N50LPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFIB7N50LPBF part is unused and in its original packaging.

Return procedure for IRFIB7N50LPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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