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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFIB8N50KPBF

Name: IRFIB8N50KPBF
Brand: Vishay Siliconix
SKU: IRFIB8N50KPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFIB8N50KPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack, Isolated Tab

Datasheet:: IRFIB8N50KPBF.pdf

Description:: MOSFET N-CH 500V 6.7A TO220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFIB8N50KPBF from Infineon Technologies is a 500V, 6.7A N-channel enhancement-mode power MOSFET in TO-220 Full-Pak package, optimized for high-voltage switch-mode power supplies and uninterruptible power supplies. It delivers 290 mΩ R_DS(on) at V_GS = 10 V, 89 nC total gate charge, and 290 mJ single-pulse avalanche energy - enabling robust high-speed power switching with simplified gate drive.

For engineers reviewing the IRFIB8N50KPBF datasheet, IRFIB8N50KPBF pinout, IRFIB8N50KPBF application, or IRFIB8N50KPBF equivalent, key selection criteria include its 500V V_DSS, 290 mΩ on-resistance at 4.0A/10V, 6.7A continuous drain rating at 25°C, TO-220 Full-Pak thermal performance (R_θJC = 2.76°C/W), and body diode recovery characteristics (t_rr = 430–640 ns).

Technical Context

This MOSFET employs planar silicon HEXFET technology with fully characterized avalanche capability and dynamic dv/dt ruggedness up to 17 V/ns. Its low Q_g (89 nC) and moderate Q_gd/Q_gs ratio (44/24 nC) support fast, controllable turn-on/turn-off transitions under hard-switching conditions.

The device integrates a co-packaged intrinsic body diode with 2.0 V forward voltage at 6.7A and 430–640 ns reverse recovery time. Thermal design is enabled by junction-to-case resistance of 2.76°C/W and maximum operating junction temperature of 150°C, validated per industrial qualification standards.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	500 V - supports primary-side switching in offline SMPS up to 400 V DC bus with margin
R_DS(on) typ.	290 mΩ @ V_GS = 10 V, I_D = 4.0 A - determines conduction loss in continuous operation
I_D cont. @ 25°C	6.7 A - defines maximum steady-state current before thermal derating applies
Q_g	89 nC - sets gate driver current requirement and switching loss contribution
E_AS	290 mJ - quantifies unclamped inductive avalanche energy handling without failure
R_θJC	2.76 °C/W - enables thermal modeling of heatsink interface for TO-220 Full-Pak mounting
t_rr	430–640 ns - impacts commutation losses and EMI in synchronous rectification or freewheeling

Pinout & Package

IRFIB8N50KPBF uses the TO-220 Full-Pak package with isolated tab (drain-connected), standardized lead assignment, and creepage distance ≥4.80 mm between leads. The package is through-hole mounted only and not recommended for surface-mount applications.

Pin/Terminal	Circuit Role	Design Meaning
1 - Gate	Control electrode	Receives 10 V gate drive to achieve full enhancement; threshold voltage 3.0–5.0 V
2 - Drain	High-voltage power terminal	Connected to drain metallization and electrically tied to isolated tab; rated for 500 V
3 - Source	Power return and reference node	Serves as common return path for load current and gate drive reference; body diode anode

Key Features

Feature	Design Value
Low gate charge	89 nC total charge reduces driver complexity and switching loss in high-frequency SMPS
Avalanche-rated	290 mJ single-pulse energy rating ensures reliability during inductive turn-off transients
Dynamic dv/dt ruggedness	17 V/ns rated capability prevents spurious turn-on in noisy high-dV/dt environments
Fully characterized capacitance	C_iss = 2160 pF, C_oss = 240 pF (25 V), C_rss = 27 pF - enables accurate snubber and gate drive design

Applications

Server PSU Primary Switch	UPS Inverter Stage
Use Scenario: High-efficiency 1 kW+ AC/DC front-end converter operating at 50–100 kHz with universal input (90–264 VAC). IC Role / Device Role / Timing Role: Primary-side high-side switch in LLC or hard-switched flyback topology, handling 500 V DC link. Use Value: 290 mΩ R_DS(on) and 290 mJ avalanche energy ensure stable operation during line surges and startup transients.	Use Scenario: Bidirectional DC/AC inverter stage in online double-conversion UPS systems with battery backup. IC Role / Device Role / Timing Role: Low-loss switching element in H-bridge output stage, conducting 6.7 A RMS under 230 VAC output. Use Value: 17 V/ns dv/dt ruggedness prevents false triggering during rapid bus voltage transitions during transfer events.
Industrial Motor Drive Snubber	Telecom Rectifier Module
Use Scenario: Clamp/snubber circuit in 400 V DC bus motor drives to absorb inductive kickback from IGBT gate drivers. IC Role / Device Role / Timing Role: Fast-recovery avalanche clamp MOSFET absorbing energy during IGBT turn-off. Use Value: 430–640 ns t_rr and 2.0 V V_SD enable efficient energy recycling with minimal voltage overshoot.	Use Scenario: Secondary-side synchronous rectifier in 48 V telecom rectifier modules with >95% efficiency target. IC Role / Device Role / Timing Role: Low-R_DS(on) replacement for Schottky diodes in forward or LLC secondary circuits. Use Value: 290 mΩ on-resistance at 10 V drive reduces conduction loss vs. 40 V Schottky alternatives in high-current paths.

Server PSU Primary Switch

UPS Inverter Stage

Use Scenario: High-efficiency 1 kW+ AC/DC front-end converter operating at 50–100 kHz with universal input (90–264 VAC).

IC Role / Device Role / Timing Role: Primary-side high-side switch in LLC or hard-switched flyback topology, handling 500 V DC link.

Use Value: 290 mΩ R_DS(on) and 290 mJ avalanche energy ensure stable operation during line surges and startup transients.

Use Scenario: Bidirectional DC/AC inverter stage in online double-conversion UPS systems with battery backup.

IC Role / Device Role / Timing Role: Low-loss switching element in H-bridge output stage, conducting 6.7 A RMS under 230 VAC output.

Use Value: 17 V/ns dv/dt ruggedness prevents false triggering during rapid bus voltage transitions during transfer events.

Industrial Motor Drive Snubber

Telecom Rectifier Module

Use Scenario: Clamp/snubber circuit in 400 V DC bus motor drives to absorb inductive kickback from IGBT gate drivers.

IC Role / Device Role / Timing Role: Fast-recovery avalanche clamp MOSFET absorbing energy during IGBT turn-off.

Use Value: 430–640 ns t_rr and 2.0 V V_SD enable efficient energy recycling with minimal voltage overshoot.

Use Scenario: Secondary-side synchronous rectifier in 48 V telecom rectifier modules with >95% efficiency target.

IC Role / Device Role / Timing Role: Low-R_DS(on) replacement for Schottky diodes in forward or LLC secondary circuits.

Use Value: 290 mΩ on-resistance at 10 V drive reduces conduction loss vs. 40 V Schottky alternatives in high-current paths.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NK50ZFP	500 V, 7.5 A, 0.55 Ω R_DS(on), SuperMESH Zener-protected, TO-220FP	Higher R_DS(on) but integrated avalanche Zener; lower peak current rating	Preferred where integrated overvoltage clamping is required and higher conduction loss is acceptable
IXTH8N50L	500 V, 8 A, 0.45 Ω R_DS(on), HiPerFET, TO-247	Higher package thermal resistance (R_θJC ≈ 1.5°C/W), larger footprint, no Full-Pak isolation	Selected when higher current headroom and superior thermal dissipation outweigh board space constraints

Compared with STP8NK50ZFP and IXTH8N50L, the IRFIB8N50KPBF offers the lowest R_DS(on) in TO-220 Full-Pak form factor, balanced gate charge, and verified industrial qualification - making it optimal for cost-sensitive, space-constrained SMPS designs requiring proven avalanche robustness.

Availability

IRFIB8N50KPBF is available at Aetrix Electronics and suitable for switch-mode power supplies, uninterruptible power supplies, and high-speed power switching applications requiring stable component supply, long-term industrial lifecycle support, and traceable sourcing.

Supply support for IRFIB8N50KPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRFIB8N50KPBF belongs to Infineon's legacy HEXFET Power MOSFET product line, engineered for high-reliability industrial power conversion systems demanding ruggedness, repeatable avalanche performance, and thermal stability.

FAQ

What is the maximum continuous drain current for IRFIB8N50KPBF at 100°C case temperature?

The IRFIB8N50KPBF supports 4.2 A continuous drain current at T_C = 100°C, as specified in its Absolute Maximum Ratings table. This derated value reflects thermal limitations of the TO-220 Full-Pak package and must be used in thermal design calculations alongside R_θJC = 2.76°C/W. The IRFIB8N50KPBF datasheet confirms this rating under V_GS = 10 V conditions.

Does IRFIB8N50KPBF have built-in avalanche protection?

Yes, the IRFIB8N50KPBF is fully characterized for unclamped inductive avalanche with E_AS = 290 mJ (single-pulse) and I_AR = 6.7 A. These values are measured per JEDEC standard test conditions (L = 13 mH, R_G = 25 Ω, starting T_J = 25°C). The IRFIB8N50KPBF does not include external Zener clamping but relies on inherent silicon ruggedness.

What is the gate threshold voltage range for IRFIB8N50KPBF?

The IRFIB8N50KPBF has a gate threshold voltage (V_GS(th)) range of 3.0 V to 5.0 V, measured at V_DS = V_GS and I_D = 250 µA. This range ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers while maintaining noise immunity. The IRFIB8N50KPBF's typical V_GS(th) is centered near 4.0 V.

Can IRFIB8N50KPBF be used in surface-mount designs?

No, the IRFIB8N50KPBF is packaged in TO-220 Full-Pak format, which is explicitly not recommended for surface-mount applications per Infineon's package documentation. Its leadframe geometry, creepage requirements, and thermal path are designed for through-hole mounting with heatsink attachment. For SMT alternatives, consider Infineon's IPD series or equivalent D²PAK devices - not the IRFIB8N50KPBF.

How does the body diode performance of IRFIB8N50KPBF compare to discrete Schottky diodes?

The IRFIB8N50KPBF body diode exhibits V_SD = 2.0 V at 6.7 A and t_rr = 430–640 ns, making it slower and higher-drop than most Schottky diodes but suitable for non-synchronous freewheeling or snubbing. Unlike Schottkys, it shares the MOSFET's thermal and voltage ratings - a key advantage in compact SMPS layouts where the IRFIB8N50KPBF serves dual switching/diode roles.

IRFIB8N50KPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack, Isolated Tab

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 6.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 350mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 89 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2160 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

IRFIB8N50KPBF FAQ

1.How can I place an order for IRFIB8N50KPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFIB8N50KPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFIB8N50KPBF reliable?

The price and inventory of IRFIB8N50KPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFIB8N50KPBF is usually 5 days.

3.What payment methods are accepted for IRFIB8N50KPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFIB8N50KPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFIB8N50KPBF?

IRFIB8N50KPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFIB8N50KPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFIB8N50KPBF?

For technical support, including IRFIB8N50KPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFIB8N50KPBF requirements.

6.How does Aetrix verify that IRFIB8N50KPBF is sourced from the original manufacturer or authorized distributors?

All IRFIB8N50KPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFIB8N50KPBF meets industry standards.

7.What is the process for return or replacement of IRFIB8N50KPBF?

All IRFIB8N50KPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFIB8N50KPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFIB8N50KPBF part is unused and in its original packaging.

Return procedure for IRFIB8N50KPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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