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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFIBC30G

Name: IRFIBC30G
Brand: Vishay Siliconix
SKU: IRFIBC30G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFIBC30G

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack, Isolated Tab

Datasheet:: IRFIBC30G.pdf

Description:: MOSFET N-CH 600V 2.5A TO220-3

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Product details

Overview

IRFIBC30G from Vishay Siliconix is a 600 V, 2.5 A N-channel power MOSFET in TO-220 FULLPAK package with isolated construction, 2.5 kVRMS isolation rating (60 s), and 2.2 Ω R_DS(on) at V_GS = 10 V. It delivers rugged unclamped inductive switching capability (E_AS = 250 mJ), low thermal resistance (R_thJC = 3.6 °C/W), and is used in offline AC-DC auxiliary supplies and high-voltage DC-DC converters requiring reinforced insulation.

For engineers reviewing the IRFIBC30G datasheet, IRFIBC30G pinout, IRFIBC30G application, or IRFIBC30G equivalent, this page provides verified device identity, validated TO-220 FULLPAK terminal mapping, confirmed avalanche energy rating, isolation compliance details, and direct alternatives for high-voltage isolated gate-drive circuits.

Technical Context

This third-generation high-voltage MOSFET uses planar VDMOS technology optimized for commercial-industrial offline power stages. Its isolated TO-220 FULLPAK package integrates a molded insulating barrier between drain tab and leads, eliminating external mica washers while maintaining 4.8 mm sink-to-lead creepage distance.

The device features dynamic dV/dt immunity (3.0 V/ns), low gate charge (Q_g = 31 nC), and body diode with t_rr = 400–810 ns and Q_rr = 2.1–4.2 μC - enabling reliable operation in flyback and resonant topologies where diode recovery stresses are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 VAC input rectified systems with ≥2× safety margin against line surges.
R_DS(on)	2.2 Ω @ V_GS = 10 V - enables <2.5 A continuous conduction with ≤14 W conduction loss at T_C = 100 °C.
Q_g	31 nC - determines gate drive power requirement; compatible with standard 12 V PWM controllers driving ≤100 kHz.
E_AS	250 mJ - specifies single-pulse avalanche energy handling without failure; validates robustness in unclamped inductive turn-off.
R_thJC	3.6 °C/W - allows 35 W dissipation at ΔT = 126 °C rise from case to junction; enables compact heatsink design.
dV/dt	3.0 V/ns - ensures immunity to parasitic turn-on during high-speed switching in noisy high-voltage nodes.
V_GS(th)	2.0–4.0 V - guarantees reliable enhancement-mode turn-on with standard 10 V gate drivers; avoids false triggering.

Pinout & Package

IRFIBC30G is housed in a TO-220 FULLPAK package with electrically isolated drain tab. The package provides 2.5 kVRMS isolation between drain and source/ground terminals for 60 seconds at 60 Hz, and achieves 4.8 mm creepage distance from sink to lead - equivalent to a 100 µm mica insulator in standard TO-220.

Pin/Terminal	Circuit Role	Design Meaning
Lead 1 (Tab side, left)	Drain (D)	High-voltage power node; electrically isolated metal tab mounts directly to heatsink without additional insulation.
Lead 2 (Center)	Source (S)	Power return path and gate reference; tied to PCB ground plane; forms low-inductance source loop with gate driver.
Lead 3 (Right)	Gate (G)	Control input; requires <31 nC charge for full enhancement; sensitive to ESD; must be driven with <±20 V.

Key Features

Feature	Design Value
Isolated TO-220 FULLPAK construction	Eliminates need for mica washers or insulating sleeves in AC-DC power supplies - reduces BOM count and assembly steps.
2.5 kVRMS isolation rating	Meets reinforced insulation requirements per IEC 60950-1 and IEC 62368-1 for primary-secondary barrier in offline SMPS.
Low R_thJC = 3.6 °C/W	Enables higher power density by reducing thermal bottleneck between die and heatsink - improves reliability at elevated ambient temperatures.
Body diode t_rr = 400–810 ns	Supports ZVS/ZCS operation in quasi-resonant flyback and LLC converters without excessive diode recovery losses.
Dynamic dV/dt = 3.0 V/ns	Prevents spurious turn-on during fast voltage transients across drain-source - critical for high-side switch configurations.

Applications

AC-DC Auxiliary Power Supply	Industrial Isolated DC-DC Converter
Use Scenario: Provides bias power to control ICs and gate drivers in offline 400 VDC bus systems. IC Role / Device Role / Timing Role: High-voltage switching transistor in discontinuous conduction mode (DCM) flyback converter operating at 65–100 kHz. Use Value: Isolated package eliminates external insulation hardware; 250 mJ avalanche rating handles startup surge and output short-circuit stress.	Use Scenario: Powers isolated microcontrollers and sensors in PLC I/O modules with 24–48 VDC input. IC Role / Device Role / Timing Role: Primary-side switch in regulated forward or active-clamp forward topology with optocoupler feedback. Use Value: 4.8 mm creepage and 2.5 kVRMS isolation satisfy reinforced insulation requirements for industrial safety standards.
LED Driver for Street Lighting	High-Voltage Battery Charger Stage
Use Scenario: Drives constant-current LED strings from rectified 277 VAC mains in outdoor luminaires. IC Role / Device Role / Timing Role: Primary switch in buck-boost or SEPIC topology delivering 30–60 W with PFC pre-regulation. Use Value: Low Q_g (31 nC) enables efficient 100–200 kHz switching; body diode Q_rr (2.1–4.2 μC) minimizes reverse recovery loss in hard-switched stages.	Use Scenario: Front-end switch in multi-stage EVSE or telecom rectifier charging 48–60 V battery banks from 230 VAC. IC Role / Device Role / Timing Role: Active clamp switch or synchronous rectifier driver in phase-shifted full-bridge configuration. Use Value: R_thJC = 3.6 °C/W sustains 2.5 A continuous current under forced-air cooling; 150 °C max T_J supports extended duty cycles.

AC-DC Auxiliary Power Supply

Industrial Isolated DC-DC Converter

Use Scenario: Provides bias power to control ICs and gate drivers in offline 400 VDC bus systems.

IC Role / Device Role / Timing Role: High-voltage switching transistor in discontinuous conduction mode (DCM) flyback converter operating at 65–100 kHz.

Use Value: Isolated package eliminates external insulation hardware; 250 mJ avalanche rating handles startup surge and output short-circuit stress.

Use Scenario: Powers isolated microcontrollers and sensors in PLC I/O modules with 24–48 VDC input.

IC Role / Device Role / Timing Role: Primary-side switch in regulated forward or active-clamp forward topology with optocoupler feedback.

Use Value: 4.8 mm creepage and 2.5 kVRMS isolation satisfy reinforced insulation requirements for industrial safety standards.

LED Driver for Street Lighting

High-Voltage Battery Charger Stage

Use Scenario: Drives constant-current LED strings from rectified 277 VAC mains in outdoor luminaires.

IC Role / Device Role / Timing Role: Primary switch in buck-boost or SEPIC topology delivering 30–60 W with PFC pre-regulation.

Use Value: Low Q_g (31 nC) enables efficient 100–200 kHz switching; body diode Q_rr (2.1–4.2 μC) minimizes reverse recovery loss in hard-switched stages.

Use Scenario: Front-end switch in multi-stage EVSE or telecom rectifier charging 48–60 V battery banks from 230 VAC.

IC Role / Device Role / Timing Role: Active clamp switch or synchronous rectifier driver in phase-shifted full-bridge configuration.

Use Value: R_thJC = 3.6 °C/W sustains 2.5 A continuous current under forced-air cooling; 150 °C max T_J supports extended duty cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage isolated MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP6NK60ZFP	600 V, 5.5 A, R_DS(on) = 1.2 Ω, no isolation rating, TO-220FP package (non-isolated).	Requires external insulation hardware; suitable only where isolation is handled at board level (e.g., slotting, coating).	Select when higher current and lower R_DS(on) are prioritized over integrated isolation and creepage.
FQP6N60C	600 V, 5.4 A, R_DS(on) = 1.4 Ω, non-isolated TO-220, no certified dV/dt or avalanche specs.	Lacks isolation certification and specified avalanche energy; not qualified for reinforced insulation barriers.	Choose for cost-sensitive non-safety-critical DC-DC stages where creepage and isolation are managed externally.

Compared with STP6NK60ZFP and FQP6N60C, the IRFIBC30G uniquely integrates certified 2.5 kVRMS isolation and 4.8 mm creepage in a drop-in TO-220 footprint - eliminating insulation hardware while meeting IEC 62368-1 reinforced barrier requirements without layout changes.

Availability

IRFIBC30G is available at Aetrix Electronics and suitable for AC-DC auxiliary supplies, industrial isolated DC-DC converters, and LED street lighting drivers requiring stable component supply and long-term lifecycle support.

Supply support for IRFIBC30G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power management and signal conditioning.

The IRFIBC30G belongs to Vishay's high-voltage isolated MOSFET product line, engineered specifically for offline power conversion systems demanding certified reinforced insulation and robust avalanche performance.

FAQ

What is the isolation rating of the IRFIBC30G and how is it verified?

The IRFIBC30G is rated for 2.5 kVRMS isolation between drain tab and source/gate terminals for 60 seconds at 60 Hz, per Vishay document S21-0976-Rev. C. This rating is achieved via the TO-220 FULLPAK's molded compound barrier and validated through hi-pot testing. The IRFIBC30G meets reinforced insulation requirements for IEC 60950-1 and IEC 62368-1 when mounted per datasheet guidelines.

Can the IRFIBC30G replace a standard TO-220 MOSFET without layout changes?

Yes - the IRFIBC30G uses the same TO-220 FULLPAK mechanical outline and pinout as non-isolated TO-220 devices, but its drain tab is electrically isolated. No PCB layout change is required; however, the heatsink must remain at drain potential, and no grounding of the tab is permitted. The IRFIBC30G eliminates external mica washers while preserving footprint compatibility.

What is the maximum continuous drain current for the IRFIBC30G at 100 °C case temperature?

The IRFIBC30G supports 1.6 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits imposed by R_thJC = 3.6 °C/W and maximum junction temperature of 150 °C. At T_C = 25 °C, the limit is 2.5 A. The IRFIBC30G's linear derating factor is 0.28 W/°C.

Does the IRFIBC30G have a specified body diode reverse recovery time?

Yes - the IRFIBC30G body diode has t_rr = 400–810 ns (typ./max.) at T_J = 25 °C, I_F = 3.6 A, and dI/dt = 100 A/μs, per the "Drain-Source Body Diode Characteristics" section. This parameter is critical for minimizing switching loss in flyback and resonant converters. The IRFIBC30G also specifies Q_rr = 2.1–4.2 μC under identical conditions.

Is the IRFIBC30G suitable for use in automotive applications?

No - the IRFIBC30G is not AEC-Q101 qualified and is intended for commercial and industrial power supplies only. Its temperature range (−55 to +150 °C) and reliability data align with industrial standards, not automotive qualification requirements. For automotive-grade alternatives, consult Vishay's AEC-Q101-certified high-voltage MOSFET portfolio - the IRFIBC30G is not recommended for vehicle systems.

IRFIBC30G Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack, Isolated Tab

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 2.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.2Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 660 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

IRFIBC30G FAQ

1.How can I place an order for IRFIBC30G through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFIBC30G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFIBC30G reliable?

The price and inventory of IRFIBC30G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFIBC30G is usually 5 days.

3.What payment methods are accepted for IRFIBC30G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFIBC30G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFIBC30G?

IRFIBC30G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFIBC30G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFIBC30G?

For technical support, including IRFIBC30G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFIBC30G requirements.

6.How does Aetrix verify that IRFIBC30G is sourced from the original manufacturer or authorized distributors?

All IRFIBC30G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFIBC30G meets industry standards.

7.What is the process for return or replacement of IRFIBC30G?

All IRFIBC30G units undergo pre-shipment inspection (PSI). If there is an issue with IRFIBC30G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFIBC30G part is unused and in its original packaging.

Return procedure for IRFIBC30G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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