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Vishay Siliconix IRFIBC40G

Part No.:
IRFIBC40G
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack, Isolated Tab
Datasheet:
AetrixIRFIBC40G.pdf
Description:
MOSFET N-CH 600V 3.5A TO220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,282

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Product details

Overview

IRFIBC40G from Vishay Siliconix is a 600 V, 3.5 A N-channel power MOSFET in TO-220 FULLPAK package with 1.2 Ω RDS(on) at VGS = 10 V, 60 nC total gate charge, and 2.5 kVRMS isolation rating - designed for high-voltage AC/DC flyback and offline SMPS primary-side switching where creepage >4.8 mm and thermal reliability are critical.

For engineers reviewing the IRFIBC40G datasheet, IRFIBC40G pinout, IRFIBC40G application, or IRFIBC40G equivalent, this device is selected for isolated high-voltage switch applications requiring verified dV/dt immunity (3.0 V/ns), low RthJC (3.1 °C/W), and avalanche-rated operation (500 mJ single-pulse) without external insulation hardware.

Technical Context

The IRFIBC40G integrates an isolated TO-220 FULLPAK structure with molded compound providing 2.5 kVRMS isolation and thermal resistance of 3.1 °C/W junction-to-case - eliminating need for mica washers or insulating pads. Its body diode exhibits 470–940 ns reverse recovery time and 4.0–7.9 μC Qrr, supporting moderate-frequency hard-switched topologies.

It operates across -55 to +150 °C junction temperature range with ±20 V gate-source voltage rating, 600 V drain-source breakdown, and dynamic dV/dt capability up to 3.0 V/ns - enabling robust performance in noisy industrial mains-connected circuits without gate clamping.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 600 V - supports 400 VAC input rectified systems with 50 % safety margin
RDS(on) 1.2 Ω @ VGS = 10 V - enables <3.5 A continuous conduction with ≤15 W conduction loss at TC = 100 °C
Qg 60 nC - determines gate drive power requirement (~1.8 mW per MHz at 10 V drive)
EAS 500 mJ - allows unclamped inductive switching survival in flyback snubberless designs
RthJC 3.1 °C/W - permits 40 W dissipation with ≤125 °C case-to-ambient ΔT using standard heatsink
dV/dt 3.0 V/ns - withstands fast transients in EMI-prone industrial environments without spurious turn-on
ID (TC = 100 °C) 2.2 A - defines maximum sustained current under real-world heatsink-limited thermal conditions

Pinout & Package

IRFIBC40G uses the TO-220 FULLPAK package: isolated plastic housing with integral heatsink tab, 3-pin through-hole configuration, 15.87 mm length, 10.10 mm width, and 4.70 mm height. The tab is electrically connected to the drain and provides both thermal path and high-voltage isolation barrier.

Pin/Terminal Circuit Role Design Meaning
G (Gate) Control terminal Receives 10 V logic-level drive; threshold 2.0–4.0 V; ±100 nA leakage ensures low standby power
D (Drain) High-voltage power input Connected to heatsink tab; rated 600 V; carries full load current and avalanche energy
S (Source) Power return / reference node Common return for gate drive and load; body diode anode; requires Kelvin connection for accurate sensing

Key Features

Feature Design Value
2.5 kVRMS isolation (60 s) Eliminates external insulating hardware in commercial-industrial SMPS, reducing BOM count and assembly cost
Sink-to-lead creepage = 4.8 mm Meets IEC/UL 60950-1 reinforced insulation requirements for 300 VAC working voltage
Low RthJC = 3.1 °C/W Enables direct mounting to heatsink with single screw/clip, achieving higher power density than standard TO-220
Dynamic dV/dt rating = 3.0 V/ns Prevents false triggering during fast transient events in high-noise line-connected applications
Single-pulse avalanche energy = 500 mJ Supports reliable operation in unclamped inductive switching without external snubbers

Applications

Offline Flyback Converters AC/DC Adapters

Use Scenario: Primary-side switch in universal-input (85–265 VAC) 15–30 W flyback converters for consumer electronics.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer via transformer primary winding; operates at 65–130 kHz.

Use Value: 2.5 kVRMS isolation and 4.8 mm creepage enable compact, certification-ready designs without insulating sleeves or barriers.

Use Scenario: Main switching element in compact wall-plug adapters for IoT sensors and smart home devices.

IC Role / Device Role / Timing Role: N-channel MOSFET performing duty-cycle-modulated switching in quasi-resonant or fixed-frequency topology.

Use Value: Low 1.2 Ω RDS(on) and 60 nC Qg balance conduction and switching losses for >85 % efficiency at light-to-moderate loads.

Industrial Power Supplies LED Driver Circuits

Use Scenario: Input-stage switch in DIN-rail mounted 24 V/48 V output supplies for PLCs and HMIs.

IC Role / Device Role / Timing Role: Primary-side switch handling 300–400 VDC bus; subjected to line surges and EFT bursts.

Use Value: 3.0 V/ns dV/dt immunity and -55 to +150 °C operating range ensure stable operation in harsh factory environments.

Use Scenario: High-side switch in constant-current LED drivers for street lighting and signage.

IC Role / Device Role / Timing Role: PWM-controlled power switch regulating average LED current in buck or buck-boost configurations.

Use Value: Avalanche-rated 500 mJ EAS tolerates inductive kickback from long LED strings without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage isolated MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP6NK60ZFP 600 V, 6 A, RDS(on) = 1.2 Ω, but non-isolated TO-220FP; no 2.5 kVRMS rating or creepage control Requires external insulation hardware for reinforced isolation; unsuitable for space-constrained certified designs Select only when board layout allows separate insulator and thermal pad; not drop-in for IRFIBC40G footprint
FQP4N60C 600 V, 4 A, RDS(on) = 1.6 Ω, TO-220 non-isolated; lower Qg (35 nC) but no dV/dt or avalanche specs published Lacks isolation and creepage data; not qualified for safety-critical mains-connected use Acceptable only in non-certified, low-risk DC-fed applications; verify thermal derating separately

Compared with STP6NK60ZFP and FQP4N60C, the IRFIBC40G uniquely delivers integrated 2.5 kVRMS isolation, 4.8 mm creepage, and documented 3.0 V/ns dV/dt immunity - making it the only option among the three qualified for compact, safety-certified offline SMPS without added insulation layers.

Availability

IRFIBC40G is available at Aetrix Electronics and suitable for offline flyback converters, AC/DC adapters, and industrial power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing for UL/IEC certification.

Supply support for IRFIBC40G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFIBC40G belongs to Vishay's high-voltage isolated MOSFET product line, engineered specifically for safety-critical AC/DC conversion where integrated isolation, creepage compliance, and rugged avalanche performance are mandatory.

FAQ

What is the maximum continuous drain current for IRFIBC40G at 100 °C case temperature?

The IRFIBC40G supports 2.2 A continuous drain current at TC = 100 °C, as specified in its Absolute Maximum Ratings table. This value reflects thermal derating from the 3.5 A rating at 25 °C and must be used for thermal design validation in real-world heatsink-limited conditions. The IRFIBC40G's 3.1 °C/W RthJC enables this current level with appropriate heatsinking.

Does IRFIBC40G require external insulation when mounted to a metal heatsink?

No - the IRFIBC40G's TO-220 FULLPAK package provides 2.5 kVRMS isolation between drain (heatsink tab) and source/gate terminals, eliminating the need for mica washers or silicone pads. Its 4.8 mm sink-to-lead creepage meets reinforced insulation requirements, making the IRFIBC40G suitable for direct-mount applications in certified power supplies.

What is the gate threshold voltage range for IRFIBC40G?

The IRFIBC40G has a gate-source threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at TJ = 25 °C and ID = 250 μA. This logic-compatible range ensures reliable turn-on with standard 10 V gate drivers while maintaining noise immunity. The IRFIBC40G does not qualify as a "logic-level" MOSFET per Vishay's definition (which requires VGS(th) ≤ 2.5 V max).

Can IRFIBC40G be used in avalanche mode repeatedly?

The IRFIBC40G is rated for repetitive avalanche current (IAR) of 3.5 A and repetitive avalanche energy (EAR) of 4.0 mJ, confirming designed capability for controlled repetitive avalanche operation. However, each event must remain within pulse width and duty cycle limits defined in the datasheet (Fig. 11), and the IRFIBC40G's junction temperature must stay below 150 °C to avoid degradation.

What is the body diode reverse recovery charge (Qrr) of IRFIBC40G?

The IRFIBC40G specifies a body diode reverse recovery charge (Qrr) of 4.0 μC (typical) to 7.9 μC (max) at TJ = 25 °C, IF = 6.2 A, and dI/dt = 100 A/μs. This parameter directly impacts switching loss and EMI in synchronous or freewheeling configurations; designers should account for Qrr in gate driver sizing and snubber design for the IRFIBC40G.

IRFIBC40G Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-220-3 Full Pack, Isolated Tab
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.2Ohm @ 2.1A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
60 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1300 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
40W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220-3

IRFIBC40G FAQ

1.How can I place an order for IRFIBC40G through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFIBC40G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFIBC40G reliable?

The price and inventory of IRFIBC40G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFIBC40G is usually 5 days.

3.What payment methods are accepted for IRFIBC40G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFIBC40G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFIBC40G?

IRFIBC40G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFIBC40G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFIBC40G?

For technical support, including IRFIBC40G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFIBC40G requirements.

6.How does Aetrix verify that IRFIBC40G is sourced from the original manufacturer or authorized distributors?

All IRFIBC40G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFIBC40G meets industry standards.

7.What is the process for return or replacement of IRFIBC40G?

All IRFIBC40G units undergo pre-shipment inspection (PSI). If there is an issue with IRFIBC40G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFIBC40G part is unused and in its original packaging.

Return procedure for IRFIBC40G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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