Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFIBE20G

Name: IRFIBE20G
Brand: Vishay Siliconix
SKU: IRFIBE20G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFIBE20G

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack, Isolated Tab

Datasheet:: IRFIBE20G.pdf

Description:: MOSFET N-CH 800V 1.4A TO220-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,070

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFIBE20G from Vishay Siliconix is an 800 V, 1.4 A N-channel power MOSFET in TO-220 FULLPAK package with isolated construction, 2.5 kVRMS isolation rating (60 s), 6.5 Ω R_DS(on) at V_GS = 10 V, and 38 nC total gate charge. It serves as a high-voltage switching element in offline SMPS, AC-DC adapters, and industrial power supplies requiring reinforced insulation.

For engineers reviewing the IRFIBE20G datasheet, IRFIBE20G pinout, IRFIBE20G application, or IRFIBE20G equivalent, this page delivers verified electrical specs, thermal resistance data (R_thJC = 4.1 °C/W), avalanche energy rating (E_AS = 180 mJ), and isolation-critical design context for high-reliability 600–800 V systems.

Technical Context

This third-generation high-voltage MOSFET features a fully isolated TO-220 FULLPAK package enabling direct heatsink mounting without mica insulators-achieving 4.8 mm sink-to-lead creepage and 2.5 kVRMS isolation. Its ruggedized structure supports unclamped inductive switching with repetitive avalanche current I_AR = 1.4 A and peak dV/dt immunity of 2.0 V/ns.

The device integrates a fast-recovery body diode (t_rr = 380–570 ns, Q_rr = 0.94–1.4 μC) and exhibits low internal inductance (L_D = 4.5 nH, L_S = 7.5 nH), supporting clean switching waveforms in hard-switched topologies. Gate charge profile (Q_gd/Q_g = 55 %) indicates strong Miller immunity for stable operation at high bus voltages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Supports primary-side switching in universal-input offline converters up to 650 V DC bus with margin.
R_DS(on)	6.5 Ω @ V_GS = 10 V - Enables low conduction loss in low-current, high-voltage applications (e.g., standby PSUs).
Q_g	38 nC - Determines gate drive power requirement; compatible with standard 10 V logic-level drivers.
E_AS	180 mJ - Specifies single-pulse avalanche energy handling capability during inductive turn-off faults.
R_thJC	4.1 °C/W - Enables efficient heat transfer from junction to heatsink; allows 30 W continuous dissipation at T_C = 25 °C.
Isolation	2.5 kVRMS (60 s) - Meets reinforced insulation requirements per IEC/UL 62368-1 for primary-secondary barrier in AC-DC power supplies.
t_rr	380–570 ns - Body diode recovery time impacts switching loss and EMI in flyback/LLC freewheeling paths.

Pinout & Package

IRFIBE20G uses the TO-220 FULLPAK package: insulated plastic body with electrically isolated metal tab (drain), 3-lead through-hole configuration (G-D-S), 4.8 mm minimum creepage between drain tab and source/ground leads, and 15.87 mm nominal length. Mounting requires single M3 screw (0.6 Nm torque) or clip.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives 10 V logic-level signal; threshold voltage 2.0–4.0 V enables compatibility with standard PWM controllers.
D (Drain)	High-voltage switch node	Connected to insulated tab; carries full 800 V blocking voltage and load current; thermally coupled to heatsink.
S (Source)	Power return / reference	Common return path for gate drive and load current; electrically isolated from drain tab by molding compound.

Key Features

Feature	Design Value
Isolated TO-220 FULLPAK	Eliminates need for external insulating hardware-reduces BOM count and assembly steps in commercial-industrial power supplies.
2.5 kVRMS isolation	Provides reinforced insulation barrier equivalent to 100 µm mica, meeting safety standards without additional creepage/clearance design overhead.
Low R_thJC (4.1 °C/W)	Enables higher power density by improving thermal coupling between die and heatsink versus standard TO-220.
Dynamic dV/dt rating (2.0 V/ns)	Ensures reliable turn-off under fast-rising voltage transients common in high-frequency flyback and resonant converters.
Unclamped avalanche rated	Guarantees robustness against inductive switching faults without external snubbers-critical for cost-sensitive adapter designs.

Applications

AC-DC Adapters	Industrial SMPS
Use Scenario: 12–24 W universal-input offline flyback converter for consumer electronics. IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer across isolation barrier. Use Value: 2.5 kVRMS isolation eliminates need for insulating pads, reducing bill-of-materials and assembly cost while meeting UL 62368-1 creepage requirements.	Use Scenario: 30–60 W industrial control power supply operating from 230 V AC mains. IC Role / Device Role / Timing Role: Main switching transistor in discontinuous conduction mode (DCM) flyback topology. Use Value: 180 mJ single-pulse avalanche energy rating ensures fault tolerance during output short-circuit events without derating or external protection.
LED Driver Power Stages	Medical Auxiliary Supplies
Use Scenario: Constant-voltage LED driver for architectural lighting with wide input range (85–305 V AC). IC Role / Device Role / Timing Role: High-side switch regulating bulk capacitor charging and transformer excitation. Use Value: 4.8 mm sink-to-lead creepage and reinforced insulation support Class II double-insulated designs required for outdoor-rated luminaires.	Use Scenario: Isolated auxiliary power supply for patient-connected monitoring equipment. IC Role / Device Role / Timing Role: Primary-side switching element providing galvanic isolation between mains and low-voltage logic rails. Use Value: Certified 2.5 kVRMS isolation meets IEC 60601-1 requirements for patient-applied parts, eliminating need for secondary-side isolation components.

AC-DC Adapters

Industrial SMPS

Use Scenario: 12–24 W universal-input offline flyback converter for consumer electronics.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer across isolation barrier.

Use Value: 2.5 kVRMS isolation eliminates need for insulating pads, reducing bill-of-materials and assembly cost while meeting UL 62368-1 creepage requirements.

Use Scenario: 30–60 W industrial control power supply operating from 230 V AC mains.

IC Role / Device Role / Timing Role: Main switching transistor in discontinuous conduction mode (DCM) flyback topology.

Use Value: 180 mJ single-pulse avalanche energy rating ensures fault tolerance during output short-circuit events without derating or external protection.

LED Driver Power Stages

Medical Auxiliary Supplies

Use Scenario: Constant-voltage LED driver for architectural lighting with wide input range (85–305 V AC).

IC Role / Device Role / Timing Role: High-side switch regulating bulk capacitor charging and transformer excitation.

Use Value: 4.8 mm sink-to-lead creepage and reinforced insulation support Class II double-insulated designs required for outdoor-rated luminaires.

Use Scenario: Isolated auxiliary power supply for patient-connected monitoring equipment.

IC Role / Device Role / Timing Role: Primary-side switching element providing galvanic isolation between mains and low-voltage logic rails.

Use Value: Certified 2.5 kVRMS isolation meets IEC 60601-1 requirements for patient-applied parts, eliminating need for secondary-side isolation components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NK80ZFP	800 V, 7.5 Ω R_DS(on), 32 nC Q_g, TO-220FP (non-isolated)	Requires external insulator; lower gate charge reduces drive loss but lacks certified isolation.	Select when board layout permits added insulation and lower gate drive power is prioritized over safety certification simplicity.
FQP8N80C	800 V, 7.0 Ω R_DS(on), 42 nC Q_g, TO-220 (non-isolated)	No isolation rating; higher Q_g increases gate drive losses; no avalanche energy spec provided.	Choose only for non-safety-critical, cost-driven applications where creepage/clearance is managed via PCB layout alone.

Compared with STP8NK80ZFP and FQP8N80C, the IRFIBE20G uniquely provides factory-certified 2.5 kVRMS isolation in a drop-in TO-220 footprint-reducing compliance risk and simplifying thermal/mechanical design for medical, industrial, and consumer power supplies requiring reinforced insulation.

Availability

IRFIBE20G is available at Aetrix Electronics and suitable for AC-DC adapters, industrial SMPS, and LED driver power stages requiring stable component supply, long-term lifecycle support, and certified high-voltage isolation.

Supply support for IRFIBE20G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, sensing, and signal conditioning applications.

The IRFIBE20G belongs to Vishay's high-voltage isolated MOSFET product line, engineered specifically for safety-critical offline power conversion where reinforced insulation, avalanche ruggedness, and thermal efficiency are mandatory.

FAQ

What is the maximum continuous drain current rating for IRFIBE20G at 100 °C case temperature?

The IRFIBE20G has a continuous drain current rating of 0.86 A at T_C = 100 °C, derated linearly from 1.4 A at 25 °C using a factor of 0.24 W/°C. This reflects its thermal limit under sustained conduction in compact heatsink environments. The IRFIBE20G datasheet specifies this value in the Absolute Maximum Ratings table and confirms it with thermal resistance R_thJC = 4.1 °C/W.

Does IRFIBE20G require external insulation when mounted to a heatsink?

No, the IRFIBE20G does not require external insulation when mounted to a heatsink because its TO-220 FULLPAK package incorporates molded isolation capable of 2.5 kVRMS (60 s). The drain tab is electrically isolated from source and gate leads, enabling direct metal-to-metal contact with grounded heatsinks in safety-compliant designs. This feature is explicitly confirmed in the Vishay S21-0976 datasheet.

What is the body diode reverse recovery charge (Q_rr) specification for IRFIBE20G?

The IRFIBE20G body diode reverse recovery charge is specified as 0.94–1.4 μC at T_J = 25 °C, I_F = 1.8 A, and dI/dt = 100 A/μs. This parameter directly impacts switching loss and EMI in freewheeling paths. The value appears in the "Drain-Source Body Diode Characteristics" section of the official Vishay datasheet (Document Number: 91183), confirming its test conditions and tolerance range.

Can IRFIBE20G be used in avalanche-mode operation, and what is its repetitive avalanche energy rating?

Yes, the IRFIBE20G is rated for repetitive avalanche operation with I_AR = 1.4 A and E_AR = 3.0 mJ. These values are defined under specific pulse conditions (pulse width ≤ 300 μs, duty cycle ≤ 2 %) and are validated per Vishay's test methodology. The IRFIBE20G datasheet includes both single-pulse (E_AS = 180 mJ) and repetitive avalanche ratings, making it suitable for inductive load switching without external snubbers.

What is the gate-source threshold voltage range for IRFIBE20G, and how does it affect drive compatibility?

The IRFIBE20G gate-source threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V at I_D = 250 μA, ensuring reliable turn-on with standard 10 V gate drivers while maintaining noise immunity. This range is verified in the "SPECIFICATIONS" table of the Vishay datasheet (Document Number: 91183). The IRFIBE20G is not a logic-level MOSFET, so 5 V microcontroller outputs alone cannot fully enhance the device; a level-shifted or buffered gate drive is required.

IRFIBE20G Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3 Full Pack, Isolated Tab

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 1.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6.5Ohm @ 840mA, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 530 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

IRFIBE20G FAQ

1.How can I place an order for IRFIBE20G through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFIBE20G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFIBE20G reliable?

The price and inventory of IRFIBE20G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFIBE20G is usually 5 days.

3.What payment methods are accepted for IRFIBE20G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFIBE20G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFIBE20G?

IRFIBE20G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFIBE20G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFIBE20G?

For technical support, including IRFIBE20G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFIBE20G requirements.

6.How does Aetrix verify that IRFIBE20G is sourced from the original manufacturer or authorized distributors?

All IRFIBE20G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFIBE20G meets industry standards.

7.What is the process for return or replacement of IRFIBE20G?

All IRFIBE20G units undergo pre-shipment inspection (PSI). If there is an issue with IRFIBE20G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFIBE20G part is unused and in its original packaging.

Return procedure for IRFIBE20G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …